JP4244074B2 - Ｍｏｎｏｓ型半導体不揮発性メモリトランジスタの製造方法 - Google Patents

Ｍｏｎｏｓ型半導体不揮発性メモリトランジスタの製造方法 Download PDF

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Publication number
JP4244074B2
JP4244074B2 JP06848298A JP6848298A JP4244074B2 JP 4244074 B2 JP4244074 B2 JP 4244074B2 JP 06848298 A JP06848298 A JP 06848298A JP 6848298 A JP6848298 A JP 6848298A JP 4244074 B2 JP4244074 B2 JP 4244074B2
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Japan
Prior art keywords
film
oxide film
memory
insulating film
tunnel insulating
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Expired - Fee Related
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JP06848298A
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English (en)
Japanese (ja)
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JPH10321740A5 (enExample
JPH10321740A (ja
Inventor
敏幸 岸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
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Citizen Holdings Co Ltd
Citizen Watch Co Ltd
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Priority to JP06848298A priority Critical patent/JP4244074B2/ja
Publication of JPH10321740A publication Critical patent/JPH10321740A/ja
Publication of JPH10321740A5 publication Critical patent/JPH10321740A5/ja
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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP06848298A 1997-03-19 1998-03-18 Ｍｏｎｏｓ型半導体不揮発性メモリトランジスタの製造方法 Expired - Fee Related JP4244074B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06848298A JP4244074B2 (ja) 1997-03-19 1998-03-18 Ｍｏｎｏｓ型半導体不揮発性メモリトランジスタの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-66262 1997-03-19
JP6626297 1997-03-19
JP06848298A JP4244074B2 (ja) 1997-03-19 1998-03-18 Ｍｏｎｏｓ型半導体不揮発性メモリトランジスタの製造方法

Publications (3)

Publication Number Publication Date
JPH10321740A JPH10321740A (ja) 1998-12-04
JPH10321740A5 JPH10321740A5 (enExample) 2005-09-08
JP4244074B2 true JP4244074B2 (ja) 2009-03-25

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JP06848298A Expired - Fee Related JP4244074B2 (ja) 1997-03-19 1998-03-18 Ｍｏｎｏｓ型半導体不揮発性メモリトランジスタの製造方法

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001093996A (ja) 1999-09-27 2001-04-06 Toshiba Corp 半導体装置の製造方法
JP4923318B2 (ja) * 1999-12-17 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置およびその動作方法
KR100386611B1 (ko) * 2000-05-08 2003-06-02 주식회사 하이닉스반도체 플래쉬 메모리 셀의 어레이와 그를 이용한 데이터프로그램방법과 소거방법
JP4792620B2 (ja) * 2000-06-21 2011-10-12 ソニー株式会社 不揮発性半導体記憶装置およびその製造方法
US6680505B2 (en) 2001-03-28 2004-01-20 Kabushiki Kaisha Toshiba Semiconductor storage element
KR100395759B1 (ko) * 2001-07-21 2003-08-21 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조방법
US7057938B2 (en) * 2002-03-29 2006-06-06 Macronix International Co., Ltd. Nonvolatile memory cell and operating method
JP2004040064A (ja) * 2002-07-01 2004-02-05 Yutaka Hayashi 不揮発性メモリとその製造方法
JP2006245415A (ja) 2005-03-04 2006-09-14 Sharp Corp 半導体記憶装置及びその製造方法、並びに携帯電子機器
US7829938B2 (en) * 2005-07-14 2010-11-09 Micron Technology, Inc. High density NAND non-volatile memory device
JP2007103640A (ja) * 2005-10-04 2007-04-19 Sony Corp 不揮発性半導体メモリデバイス
JP4997872B2 (ja) * 2006-08-22 2012-08-08 ソニー株式会社 不揮発性半導体メモリデバイスおよびその製造方法
JP5103478B2 (ja) * 2007-09-10 2012-12-19 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置の製造方法

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Publication number Publication date
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