JP4244074B2 - Ｍｏｎｏｓ型半導体不揮発性メモリトランジスタの製造方法 - Google Patents
Ｍｏｎｏｓ型半導体不揮発性メモリトランジスタの製造方法 Download PDFInfo
- Publication number
- JP4244074B2 JP4244074B2 JP06848298A JP6848298A JP4244074B2 JP 4244074 B2 JP4244074 B2 JP 4244074B2 JP 06848298 A JP06848298 A JP 06848298A JP 6848298 A JP6848298 A JP 6848298A JP 4244074 B2 JP4244074 B2 JP 4244074B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- memory
- insulating film
- tunnel insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 154
- 238000004519 manufacturing process Methods 0.000 title claims description 54
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 title claims 6
- 239000010408 film Substances 0.000 claims description 378
- 239000000758 substrate Substances 0.000 claims description 77
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 70
- 229910052710 silicon Inorganic materials 0.000 claims description 67
- 239000010703 silicon Substances 0.000 claims description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 66
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 63
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 60
- 239000001301 oxygen Substances 0.000 claims description 60
- 229910052760 oxygen Inorganic materials 0.000 claims description 60
- 150000004767 nitrides Chemical class 0.000 claims description 50
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 37
- 229910052757 nitrogen Inorganic materials 0.000 claims description 33
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- 230000003647 oxidation Effects 0.000 claims description 20
- 238000007254 oxidation reaction Methods 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 17
- 239000012298 atmosphere Substances 0.000 claims description 14
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 12
- 238000005121 nitriding Methods 0.000 claims description 9
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- -1 nitrogen ions Chemical class 0.000 claims description 4
- 229960001730 nitrous oxide Drugs 0.000 claims description 3
- 235000013842 nitrous oxide Nutrition 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 230000014759 maintenance of location Effects 0.000 description 27
- 230000004888 barrier function Effects 0.000 description 21
- 230000008569 process Effects 0.000 description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 17
- 238000005530 etching Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 229910021529 ammonia Inorganic materials 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06848298A JP4244074B2 (ja) | 1997-03-19 | 1998-03-18 | Ｍｏｎｏｓ型半導体不揮発性メモリトランジスタの製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9-66262 | 1997-03-19 | ||
| JP6626297 | 1997-03-19 | ||
| JP06848298A JP4244074B2 (ja) | 1997-03-19 | 1998-03-18 | Ｍｏｎｏｓ型半導体不揮発性メモリトランジスタの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10321740A JPH10321740A (ja) | 1998-12-04 |
| JPH10321740A5 JPH10321740A5 (enExample) | 2005-09-08 |
| JP4244074B2 true JP4244074B2 (ja) | 2009-03-25 |
Family
ID=26407442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06848298A Expired - Fee Related JP4244074B2 (ja) | 1997-03-19 | 1998-03-18 | Ｍｏｎｏｓ型半導体不揮発性メモリトランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4244074B2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001093996A (ja) | 1999-09-27 | 2001-04-06 | Toshiba Corp | 半導体装置の製造方法 |
| JP4923318B2 (ja) * | 1999-12-17 | 2012-04-25 | ソニー株式会社 | 不揮発性半導体記憶装置およびその動作方法 |
| KR100386611B1 (ko) * | 2000-05-08 | 2003-06-02 | 주식회사 하이닉스반도체 | 플래쉬 메모리 셀의 어레이와 그를 이용한 데이터프로그램방법과 소거방법 |
| JP4792620B2 (ja) * | 2000-06-21 | 2011-10-12 | ソニー株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
| US6680505B2 (en) | 2001-03-28 | 2004-01-20 | Kabushiki Kaisha Toshiba | Semiconductor storage element |
| KR100395759B1 (ko) * | 2001-07-21 | 2003-08-21 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그 제조방법 |
| US7057938B2 (en) * | 2002-03-29 | 2006-06-06 | Macronix International Co., Ltd. | Nonvolatile memory cell and operating method |
| JP2004040064A (ja) * | 2002-07-01 | 2004-02-05 | Yutaka Hayashi | 不揮発性メモリとその製造方法 |
| JP2006245415A (ja) | 2005-03-04 | 2006-09-14 | Sharp Corp | 半導体記憶装置及びその製造方法、並びに携帯電子機器 |
| US7829938B2 (en) * | 2005-07-14 | 2010-11-09 | Micron Technology, Inc. | High density NAND non-volatile memory device |
| JP2007103640A (ja) * | 2005-10-04 | 2007-04-19 | Sony Corp | 不揮発性半導体メモリデバイス |
| JP4997872B2 (ja) * | 2006-08-22 | 2012-08-08 | ソニー株式会社 | 不揮発性半導体メモリデバイスおよびその製造方法 |
| WO2009034605A1 (ja) * | 2007-09-10 | 2009-03-19 | Renesas Technology Corp. | 不揮発性半導体記憶装置およびその製造方法 |
-
1998
- 1998-03-18 JP JP06848298A patent/JP4244074B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10321740A (ja) | 1998-12-04 |
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