JP4231622B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP4231622B2
JP4231622B2 JP2000371650A JP2000371650A JP4231622B2 JP 4231622 B2 JP4231622 B2 JP 4231622B2 JP 2000371650 A JP2000371650 A JP 2000371650A JP 2000371650 A JP2000371650 A JP 2000371650A JP 4231622 B2 JP4231622 B2 JP 4231622B2
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Japan
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group
acid
compound
substituted
carboxylic acid
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Japanese (ja)
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JP2001281849A (ja
JP2001281849A5 (enExample
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邦彦 児玉
慎一 漢那
利明 青合
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Fujifilm Corp
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Fujifilm Corp
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  • Compositions Of Macromolecular Compounds (AREA)
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JP2000371650A 2000-01-27 2000-12-06 ポジ型レジスト組成物 Expired - Lifetime JP4231622B2 (ja)

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JP2000371650A JP4231622B2 (ja) 2000-01-27 2000-12-06 ポジ型レジスト組成物

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JP2000019031 2000-01-27
JP2000-19031 2000-01-27
JP2000371650A JP4231622B2 (ja) 2000-01-27 2000-12-06 ポジ型レジスト組成物

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JP2001281849A JP2001281849A (ja) 2001-10-10
JP2001281849A5 JP2001281849A5 (enExample) 2006-01-12
JP4231622B2 true JP4231622B2 (ja) 2009-03-04

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KR20130045804A (ko) 2011-10-26 2013-05-06 신에쓰 가가꾸 고교 가부시끼가이샤 ＡｒＦ 액침 노광용 화학 증폭 포지티브형 레지스트 재료 및 패턴 형성 방법
US8980527B2 (en) 2012-01-13 2015-03-17 Shin-Etsu Chemical Co., Ltd. Pattern forming process and resist compostion
US9329476B2 (en) 2014-01-10 2016-05-03 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and patterning process
US9348227B2 (en) 2014-06-09 2016-05-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified resist composition and pattern forming process
EP3062150A2 (en) 2015-02-25 2016-08-31 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and pattern forming process
EP3081987A2 (en) 2015-04-13 2016-10-19 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition using novel onium salt and resist pattern forming process
US9500949B2 (en) 2014-03-07 2016-11-22 Shin-Etsu Chemical Co., Ltd. Chemically-amplified positive resist composition and resist patterning process using the same
US9535325B2 (en) 2014-01-10 2017-01-03 Shin-Etsu Chemical Co., Ltd. Onium salt, chemically amplified positive resist composition, and patterning process
EP3279734A1 (en) 2016-08-05 2018-02-07 Shin-Etsu Chemical Co., Ltd. Positive resist composition, resist pattern forming process, and photomask blank
EP3279729A1 (en) 2016-08-05 2018-02-07 Shin-Etsu Chemical Co., Ltd. Negative resist composition and resist pattern forming process
EP3343291A1 (en) 2016-12-28 2018-07-04 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and resist pattern forming process
EP3343292A1 (en) 2016-12-28 2018-07-04 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and resist pattern forming process
KR20200027906A (ko) 2018-09-05 2020-03-13 신에쓰 가가꾸 고교 가부시끼가이샤 술포늄 화합물, 포지티브형 레지스트 조성물, 및 레지스트 패턴 형성 방법
KR20200030012A (ko) 2018-09-11 2020-03-19 신에쓰 가가꾸 고교 가부시끼가이샤 요오도늄염, 레지스트 조성물, 및 패턴 형성 방법
EP3644122A1 (en) 2018-10-25 2020-04-29 Shin-Etsu Chemical Co., Ltd. Onium salt, negative resist composition, and resist pattern forming process
KR20220115878A (ko) 2021-02-12 2022-08-19 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 네거티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
EP4047418A1 (en) 2021-02-12 2022-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and resist pattern forming process
US11548844B2 (en) 2018-05-25 2023-01-10 Shin-Etsu Chemical Co., Ltd. Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process
EP4286944A1 (en) 2022-06-01 2023-12-06 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and resist pattern forming process
EP4286945A1 (en) 2022-06-01 2023-12-06 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and resist pattern forming process
EP4286946A1 (en) 2022-06-01 2023-12-06 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and resist pattern forming process
EP4286943A1 (en) 2022-06-01 2023-12-06 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and resist pattern forming process
KR20240147573A (ko) 2023-03-31 2024-10-08 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 포지티브형 레지스트 조성물, 및 레지스트 패턴 형성 방법
KR20240147574A (ko) 2023-03-31 2024-10-08 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 네가티브형 레지스트 조성물, 및 레지스트 패턴 형성 방법
KR20240147531A (ko) 2023-03-31 2024-10-08 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 네거티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
EP4462188A2 (en) 2023-05-10 2024-11-13 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and resist pattern forming process
EP4462189A2 (en) 2023-05-11 2024-11-13 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and resist pattern forming process
KR20240164420A (ko) 2023-05-11 2024-11-19 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 네가티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
KR20240163538A (ko) 2023-05-10 2024-11-19 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 네거티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
US12174536B2 (en) 2020-11-19 2024-12-24 Shin-Etsu Chemical Co., Ltd. Resist composition and pattern forming process
EP4481494A2 (en) 2023-06-22 2024-12-25 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and resist pattern forming process
EP4517425A2 (en) 2023-08-28 2025-03-05 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and resist pattern forming process
EP4625044A1 (en) 2024-03-04 2025-10-01 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and resist pattern forming process

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JP2006078760A (ja) 2004-09-09 2006-03-23 Tokyo Ohka Kogyo Co Ltd 電子線またはｅｕｖ（極端紫外光）用レジスト組成物及びレジストパターン形成方法
WO2008066011A1 (fr) * 2006-11-28 2008-06-05 Jsr Corporation Composition de résine sensible au rayonnement positif et procédé de formation de motif
JP5007846B2 (ja) 2010-02-26 2012-08-22 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
JP5561192B2 (ja) 2010-02-26 2014-07-30 信越化学工業株式会社 高分子化合物及びこれを用いた化学増幅ポジ型レジスト組成物並びにパターン形成方法
JP5505371B2 (ja) 2010-06-01 2014-05-28 信越化学工業株式会社 高分子化合物、化学増幅ポジ型レジスト材料、及びパターン形成方法
JP5278406B2 (ja) 2010-11-02 2013-09-04 信越化学工業株式会社 パターン形成方法
JP5601309B2 (ja) 2010-11-29 2014-10-08 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP5601286B2 (ja) 2011-07-25 2014-10-08 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP5556765B2 (ja) * 2011-08-05 2014-07-23 信越化学工業株式会社 ＡｒＦ液浸露光用化学増幅ポジ型レジスト材料及びパターン形成方法
JP5846889B2 (ja) * 2011-12-14 2016-01-20 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物
JP5904180B2 (ja) 2013-09-11 2016-04-13 信越化学工業株式会社 スルホニウム塩、化学増幅型レジスト組成物、及びパターン形成方法
JP6028716B2 (ja) * 2013-11-05 2016-11-16 信越化学工業株式会社 レジスト材料及びパターン形成方法
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US10295904B2 (en) * 2016-06-07 2019-05-21 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP6645463B2 (ja) * 2017-03-17 2020-02-14 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6904302B2 (ja) * 2017-06-14 2021-07-14 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7131499B2 (ja) * 2018-08-09 2022-09-06 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7351371B2 (ja) * 2018-09-11 2023-09-27 信越化学工業株式会社 レジスト組成物、及びパターン形成方法
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JP7351257B2 (ja) * 2019-08-14 2023-09-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
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KR20130045804A (ko) 2011-10-26 2013-05-06 신에쓰 가가꾸 고교 가부시끼가이샤 ＡｒＦ 액침 노광용 화학 증폭 포지티브형 레지스트 재료 및 패턴 형성 방법
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US8980527B2 (en) 2012-01-13 2015-03-17 Shin-Etsu Chemical Co., Ltd. Pattern forming process and resist compostion
US9329476B2 (en) 2014-01-10 2016-05-03 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and patterning process
US9535325B2 (en) 2014-01-10 2017-01-03 Shin-Etsu Chemical Co., Ltd. Onium salt, chemically amplified positive resist composition, and patterning process
US9500949B2 (en) 2014-03-07 2016-11-22 Shin-Etsu Chemical Co., Ltd. Chemically-amplified positive resist composition and resist patterning process using the same
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EP3062150A2 (en) 2015-02-25 2016-08-31 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and pattern forming process
KR20160103950A (ko) 2015-02-25 2016-09-02 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
US9720323B2 (en) 2015-02-25 2017-08-01 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and pattern forming process
EP3081987A2 (en) 2015-04-13 2016-10-19 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition using novel onium salt and resist pattern forming process
KR20160122085A (ko) 2015-04-13 2016-10-21 신에쓰 가가꾸 고교 가부시끼가이샤 신규 오늄염 화합물을 이용한 화학 증폭형 네거티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
US9740098B2 (en) 2015-04-13 2017-08-22 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition using novel onium salt and resist pattern forming process
KR20180016276A (ko) 2016-08-05 2018-02-14 신에쓰 가가꾸 고교 가부시끼가이샤 포지티브형 레지스트 조성물, 레지스트 패턴 형성 방법 및 포토마스크 블랭크
EP3279729A1 (en) 2016-08-05 2018-02-07 Shin-Etsu Chemical Co., Ltd. Negative resist composition and resist pattern forming process
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US10120279B2 (en) 2016-08-05 2018-11-06 Shin-Etsu Chemical Co., Ltd. Negative resist composition and resist pattern forming process
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KR20180077073A (ko) 2016-12-28 2018-07-06 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 네가티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
US10495969B2 (en) 2016-12-28 2019-12-03 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and resist pattern forming process
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EP4462188A2 (en) 2023-05-10 2024-11-13 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and resist pattern forming process
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EP4468080A1 (en) 2023-05-11 2024-11-27 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and resist pattern forming process
KR20240164420A (ko) 2023-05-11 2024-11-19 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 네가티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
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EP4481494A2 (en) 2023-06-22 2024-12-25 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and resist pattern forming process
EP4517425A2 (en) 2023-08-28 2025-03-05 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and resist pattern forming process
KR20250032981A (ko) 2023-08-28 2025-03-07 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 네거티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
EP4625044A1 (en) 2024-03-04 2025-10-01 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and resist pattern forming process

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