JP4220966B2 - シリコンウエハの2次研磨用スラリー組成物 - Google Patents
シリコンウエハの2次研磨用スラリー組成物 Download PDFInfo
- Publication number
- JP4220966B2 JP4220966B2 JP2004558503A JP2004558503A JP4220966B2 JP 4220966 B2 JP4220966 B2 JP 4220966B2 JP 2004558503 A JP2004558503 A JP 2004558503A JP 2004558503 A JP2004558503 A JP 2004558503A JP 4220966 B2 JP4220966 B2 JP 4220966B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- slurry composition
- slurry
- secondary polishing
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 79
- 239000002002 slurry Substances 0.000 title claims abstract description 64
- 239000000203 mixture Substances 0.000 title claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 5
- 229910052710 silicon Inorganic materials 0.000 title abstract description 5
- 239000010703 silicon Substances 0.000 title abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 239000002245 particle Substances 0.000 claims abstract description 29
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 10
- 239000008119 colloidal silica Substances 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 9
- 239000008367 deionised water Substances 0.000 claims abstract description 8
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 8
- 239000002562 thickening agent Substances 0.000 claims description 12
- -1 polyoxyethylene Polymers 0.000 claims description 11
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 10
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 10
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- 229920003169 water-soluble polymer Polymers 0.000 claims description 10
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 9
- 229920013821 hydroxy alkyl cellulose Polymers 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 claims description 5
- 229920003063 hydroxymethyl cellulose Polymers 0.000 claims description 5
- 229940031574 hydroxymethyl cellulose Drugs 0.000 claims description 5
- 239000001863 hydroxypropyl cellulose Substances 0.000 claims description 5
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- RPZANUYHRMRTTE-UHFFFAOYSA-N 2,3,4-trimethoxy-6-(methoxymethyl)-5-[3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxyoxane;1-[[3,4,5-tris(2-hydroxybutoxy)-6-[4,5,6-tris(2-hydroxybutoxy)-2-(2-hydroxybutoxymethyl)oxan-3-yl]oxyoxan-2-yl]methoxy]butan-2-ol Chemical compound COC1C(OC)C(OC)C(COC)OC1OC1C(OC)C(OC)C(OC)OC1COC.CCC(O)COC1C(OCC(O)CC)C(OCC(O)CC)C(COCC(O)CC)OC1OC1C(OCC(O)CC)C(OCC(O)CC)C(OCC(O)CC)OC1COCC(O)CC RPZANUYHRMRTTE-UHFFFAOYSA-N 0.000 claims description 2
- YFOJIPYRRZIXNM-UHFFFAOYSA-N CC(C)(C)CON.O Chemical compound CC(C)(C)CON.O YFOJIPYRRZIXNM-UHFFFAOYSA-N 0.000 claims description 2
- XQKOQVGSLKQXQG-UHFFFAOYSA-N CC1(C)CCNCC1.O Chemical compound CC1(C)CCNCC1.O XQKOQVGSLKQXQG-UHFFFAOYSA-N 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 2
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 claims description 2
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 claims description 2
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 claims description 2
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 claims description 2
- 229920000609 methyl cellulose Polymers 0.000 claims description 2
- 239000001923 methylcellulose Substances 0.000 claims description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 2
- 239000004094 surface-active agent Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 26
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract description 22
- 239000002736 nonionic surfactant Substances 0.000 abstract description 10
- 229920000642 polymer Polymers 0.000 abstract description 2
- 238000000518 rheometry Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 description 24
- 239000006185 dispersion Substances 0.000 description 13
- 230000007547 defect Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 9
- 150000003973 alkyl amines Chemical class 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 150000001412 amines Chemical class 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000178 monomer Substances 0.000 description 5
- 125000006353 oxyethylene group Chemical group 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003002 pH adjusting agent Substances 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011362 coarse particle Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- XXMBEHIWODXDTR-UHFFFAOYSA-N 1,2-diaminoethanol Chemical compound NCC(N)O XXMBEHIWODXDTR-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910020366 ClO 4 Inorganic materials 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 239000013538 functional additive Substances 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- KNHNLCHRGUQAAO-UHFFFAOYSA-M tetramethoxyazanium;hydroxide Chemical compound [OH-].CO[N+](OC)(OC)OC KNHNLCHRGUQAAO-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Silicon Compounds (AREA)
Description
RN(R′O)m(R″O)n (1)
ここに、Rは1〜3個の炭素原子を有するアルキル基であり、R′とR″はそれぞれ独立してエチレン基またはイソプロピレン基であり、mとnはそれぞれ独立して10〜80の整数であり、m+nは20〜90の範囲内である。
ポリッシャ:STRAUGHBAUGH MARK9K
テーブル速度:50rpm
ヘッド速度:30rpm
スラリーの流量:0.5L/分
圧力:5psi
実施例1
第1の平均粒子直径40nmと第2の平均粒子直径70nmとを有するコロイド状シリカが脱イオン水中で希釈され、(最終組成物に基づいて)6重量%のシリカ含有量が獲得され、次に、それにアンモニアが、(最終組成物に基づいて)総量1重量%中で添加されpH値が10.3〜10.5に調整された。水酸化テトラメトキシアンモニウムが、第4アンモニウムベースとして、(最終組成物に基づいて)総量0.08重量%中で用いられ、pH値が10.5〜10.6に調整された。平均分子量500000のヒドロキシエチルセルロースが、増粘剤として、(最終組成物に基づいて)総量0.6重量%中で添加され、30モルのオキシエチレン・モノマーを含有するトリポリオキシエチレンアミン・エーテルが総量0.1重量%中で混合された。結果として得られた混合物は、ホモジナイザ(IKA製)を用いて2000rpmで攪拌され、粘性70cPのスラリー組成物が調製された。
比較例1のスラリー組成物は、トリポリオキシエチレンアミン・エーテルが添加されないことを除いて、実施例1と同じように調製された。得られたスラリー組成物の凹んだマイクロスクラッチとエリアスクラッチとが実施例1と同様に測定された。平均で10個のLPDと10個のエリア欠陥とが観察された。
スラリー組成物は、コロイド状シリカの第1および第2の粒子直径が表1に示すように変更されたことを除いて、実施例1と同じように調製され評価された。その結果が表1に示されている。
実施例3
スラリー組成物は、ポリオキシエチレンアルキルアミン・エーテルに添加されるオキシエチレン・モノマーの量が表2に示すように変更されたことを除いて、実施例1と同様に調製され評価された。その結果が表2に示されている。
表3に示すさまざまな第1の粒子直径、第2の粒子直径、および粘性を有するが、シリカ含有量(6重量%)とpH(10.7)とが同じである市販のスラリーは、脱イオン水で10倍に希釈された。スラリーの研磨手順は実施例1と同様に実行された。その結果が下の表3に示されている。
Claims (4)
- 研削剤としての第1の粒子直径35〜50nmと第2の粒子直径60〜80nmとを有する2〜10重量%のコロイド状シリカと、0.5〜1.5重量%のアンモニアと、0.2〜1重量%のヒドロキシアルキルセルロース基の水溶性ポリマー増粘剤と、0.03〜0.5重量%の次の式(1)によって示されるポリオキシエチレンアルキルアミン・エーテル基の非イオン性界面活性剤と、0.01〜1重量%の第4アンモニウムベースと、残量として脱イオン水とを含有することを特徴とする半導体ウエハの2次研磨用スラリー組成物。
RN(R′O) m (R″O) n (1)
ここに、Rは1〜3個の炭素原子を有するアルキル基であり、R′とR″はそれぞれ独立してエチレン基またはイソプロピレン基であり、mとnはそれぞれ独立して10〜80の整数であり、m+nは20〜90の範囲内である。 - 請求項1に記載の半導体ウエハの2次研磨用スラリー組成物において、
前記水溶性ポリマー増粘剤は、ヒドロキシプロピルセルロース、ヒドロキシブチルメチルセルロース、ヒドロキシプロピルメチルセルロース、ヒドロキシエチルセルロース、親油変性されたヒドロキシエチルセルロース、ヒドロキシメチルセルロース、およびメチルセルロースから成るグループから選択された材料であり、重量平均分子量100000〜1500000を有することを特徴とする半導体ウエハの2次研磨用スラリー組成物。 - 請求項1に記載の半導体ウエハの2次研磨用スラリー組成物において、
前記水溶性ポリマー増粘剤が、前記スラリーの粘性を7〜80cPに調整するために含有されていることを特徴とする半導体ウエハの2次研磨用スラリー組成物。 - 請求項1に記載の半導体ウエハの2次研磨用スラリー組成物において、
前記第4アンモニウムベースが、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、水酸化トリメチルエトキシルアンモニウム、および水酸化N、Nジメチルピペリジンから成るグループから選択された材料であることを特徴とする半導体ウエハの2次研磨用スラリー組成物。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0077860A KR100516886B1 (ko) | 2002-12-09 | 2002-12-09 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
PCT/KR2003/001532 WO2004053968A1 (en) | 2002-12-09 | 2003-07-30 | Slurry composition for secondary polishing of silicon wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006509364A JP2006509364A (ja) | 2006-03-16 |
JP4220966B2 true JP4220966B2 (ja) | 2009-02-04 |
Family
ID=36165413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004558503A Expired - Lifetime JP4220966B2 (ja) | 2002-12-09 | 2003-07-30 | シリコンウエハの2次研磨用スラリー組成物 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7534277B2 (ja) |
EP (1) | EP1570512B1 (ja) |
JP (1) | JP4220966B2 (ja) |
KR (1) | KR100516886B1 (ja) |
CN (1) | CN100490082C (ja) |
AT (1) | ATE455160T1 (ja) |
DE (1) | DE60330994D1 (ja) |
TW (1) | TWI243849B (ja) |
WO (1) | WO2004053968A1 (ja) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100516884B1 (ko) * | 2002-12-09 | 2005-09-23 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
KR100497412B1 (ko) * | 2002-12-12 | 2005-06-28 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
US7799141B2 (en) * | 2003-06-27 | 2010-09-21 | Lam Research Corporation | Method and system for using a two-phases substrate cleaning compound |
KR100645307B1 (ko) * | 2004-12-31 | 2006-11-14 | 제일모직주식회사 | 실리콘 웨이퍼용 경면 연마 슬러리 조성물 |
TWI324797B (en) | 2005-04-05 | 2010-05-11 | Lam Res Corp | Method for removing particles from a surface |
KR100643628B1 (ko) * | 2005-11-04 | 2006-11-10 | 제일모직주식회사 | 다결정 실리콘 연마용 cmp 슬러리 조성물 및 이의 제조방법 |
KR100754807B1 (ko) | 2005-12-23 | 2007-09-03 | 제일모직주식회사 | 실리콘 웨이퍼 연마용 슬러리 조성물 및 이를 이용한연마방법 |
JP2007235036A (ja) * | 2006-03-03 | 2007-09-13 | Toshiba Ceramics Co Ltd | シリコンウエハの親水化処理方法及びそれに用いる親水化処理剤 |
CN100383209C (zh) * | 2006-05-31 | 2008-04-23 | 河北工业大学 | 用于硼酸锂铯晶体的化学机械无水抛光液及平整化方法 |
JP5335183B2 (ja) * | 2006-08-24 | 2013-11-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
JP5204960B2 (ja) * | 2006-08-24 | 2013-06-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
KR100827591B1 (ko) * | 2006-11-27 | 2008-05-07 | 제일모직주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물 |
CN101195729A (zh) * | 2006-12-08 | 2008-06-11 | 安集微电子(上海)有限公司 | 非离子型聚合物在自停止多晶硅抛光液制备及使用中的应用 |
US20090001339A1 (en) * | 2007-06-29 | 2009-01-01 | Tae Young Lee | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same |
JP2009146998A (ja) * | 2007-12-12 | 2009-07-02 | Toshiba Corp | 半導体装置の製造方法 |
JP5220428B2 (ja) * | 2008-02-01 | 2013-06-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物を用いた研磨方法 |
SG188090A1 (en) * | 2008-02-01 | 2013-03-28 | Fujimi Inc | Polishing composition and polishing method using the same |
JP5474400B2 (ja) * | 2008-07-03 | 2014-04-16 | 株式会社フジミインコーポレーテッド | 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法 |
US8974691B2 (en) * | 2010-09-24 | 2015-03-10 | Fujimi Incorporated | Composition for polishing and composition for rinsing |
US9090799B2 (en) * | 2010-11-08 | 2015-07-28 | Fujimi Incorporated | Composition for polishing and method of polishing semiconductor substrate using same |
TWI593864B (zh) * | 2011-11-11 | 2017-08-01 | Sumco Corp | Semiconductor manufacturing plant |
TWI456013B (zh) * | 2012-04-10 | 2014-10-11 | Uwiz Technology Co Ltd | 研磨液組成物 |
CN102766408B (zh) * | 2012-06-28 | 2014-05-28 | 深圳市力合材料有限公司 | 一种适用于低下压力的硅晶片精抛光组合液及其制备方法 |
JP5460827B2 (ja) * | 2012-11-14 | 2014-04-02 | 株式会社フジミインコーポレーテッド | シリコンウエハの製造方法 |
US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
JP6314019B2 (ja) * | 2014-03-31 | 2018-04-18 | ニッタ・ハース株式会社 | 半導体基板の研磨方法 |
JP6259723B2 (ja) | 2014-06-18 | 2018-01-10 | 株式会社フジミインコーポレーテッド | シリコンウェーハの研磨方法、研磨用組成物および研磨用組成物セット |
CN105448689B (zh) * | 2014-08-07 | 2018-09-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法和电子装置 |
JP6206360B2 (ja) * | 2014-08-29 | 2017-10-04 | 株式会社Sumco | シリコンウェーハの研磨方法 |
TWI595081B (zh) * | 2016-04-29 | 2017-08-11 | 臺灣永光化學工業股份有限公司 | 用於拋光藍寶石基板之研磨組成物和拋光藍寶石基板之方法 |
CN107398780B (zh) * | 2016-05-18 | 2020-03-31 | 上海新昇半导体科技有限公司 | 一种晶圆的双面抛光方法 |
CN109971358A (zh) * | 2017-12-27 | 2019-07-05 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
WO2021182155A1 (ja) * | 2020-03-13 | 2021-09-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
CN115662877B (zh) * | 2022-09-08 | 2023-08-04 | 东海县太阳光新能源有限公司 | 一种单晶硅表面清洗方法 |
CN115851138B (zh) * | 2022-12-23 | 2024-06-28 | 博力思(天津)电子科技有限公司 | 一种可减少硅片表面颗粒沾污的硅精抛液 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3715842A (en) | 1970-07-02 | 1973-02-13 | Tizon Chem Corp | Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces |
US4169337A (en) | 1978-03-30 | 1979-10-02 | Nalco Chemical Company | Process for polishing semi-conductor materials |
US4462188A (en) | 1982-06-21 | 1984-07-31 | Nalco Chemical Company | Silica sol compositions for polishing silicon wafers |
US4588421A (en) | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
US4885565A (en) * | 1988-06-01 | 1989-12-05 | General Motors Corporation | Touchscreen CRT with tactile feedback |
US5352277A (en) | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
DE4034112A1 (de) * | 1990-10-26 | 1992-04-30 | Bosch Gmbh Robert | Blockiergeschuetzte hydraulische mehrkreis-bremsanlage, insbesondere fuer kraftfahrzeuge |
WO1996038262A1 (en) | 1995-06-01 | 1996-12-05 | Rodel, Inc. | Compositions for polishing silicon wafers and methods |
US5887995A (en) * | 1997-09-23 | 1999-03-30 | Compaq Computer Corporation | Touchpad overlay with tactile response |
JP3810588B2 (ja) * | 1998-06-22 | 2006-08-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2000006327A (ja) | 1998-06-23 | 2000-01-11 | Mitsubishi Chem Mkv Co | 積層体 |
US6429846B2 (en) * | 1998-06-23 | 2002-08-06 | Immersion Corporation | Haptic feedback for touchpads and other touch controls |
US6676492B2 (en) * | 1998-12-15 | 2004-01-13 | Chou H. Li | Chemical mechanical polishing |
US6276996B1 (en) * | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
KR100822116B1 (ko) * | 1998-12-25 | 2008-04-15 | 히다치 가세고교 가부시끼가이샤 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
KR100289150B1 (ko) * | 1998-12-30 | 2001-05-02 | 이병구 | 실리콘웨이퍼의최종연마용슬러리 |
WO2001033620A1 (fr) | 1999-11-04 | 2001-05-10 | Seimi Chemical Co., Ltd. | Compose a polir pour semi-conducteur contenant un peptide |
JP3768401B2 (ja) | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
KR100363557B1 (ko) * | 2000-12-28 | 2002-12-05 | 제일모직주식회사 | 실리콘 웨이퍼 연마용 슬러리 및 이를 이용한 경면연마 방법 |
JP4025953B2 (ja) * | 2001-01-05 | 2007-12-26 | 荒川化学工業株式会社 | 洗浄剤組成物 |
US6685757B2 (en) * | 2002-02-21 | 2004-02-03 | Rodel Holdings, Inc. | Polishing composition |
CN1665902A (zh) * | 2002-06-07 | 2005-09-07 | 昭和电工株式会社 | 金属抛光组合物,使用组合物进行抛光的方法以及使用抛光方法来生产晶片的方法 |
KR100516884B1 (ko) * | 2002-12-09 | 2005-09-23 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
-
2002
- 2002-12-09 KR KR10-2002-0077860A patent/KR100516886B1/ko not_active IP Right Cessation
-
2003
- 2003-07-30 CN CNB038255340A patent/CN100490082C/zh not_active Expired - Lifetime
- 2003-07-30 JP JP2004558503A patent/JP4220966B2/ja not_active Expired - Lifetime
- 2003-07-30 DE DE60330994T patent/DE60330994D1/de not_active Expired - Lifetime
- 2003-07-30 WO PCT/KR2003/001532 patent/WO2004053968A1/en active Application Filing
- 2003-07-30 AT AT03812702T patent/ATE455160T1/de not_active IP Right Cessation
- 2003-07-30 US US10/531,125 patent/US7534277B2/en not_active Expired - Lifetime
- 2003-07-30 EP EP03812702A patent/EP1570512B1/en not_active Expired - Lifetime
- 2003-12-09 TW TW092134627A patent/TWI243849B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200415233A (en) | 2004-08-16 |
CN1714432A (zh) | 2005-12-28 |
ATE455160T1 (de) | 2010-01-15 |
KR20040050726A (ko) | 2004-06-17 |
DE60330994D1 (de) | 2010-03-04 |
EP1570512A4 (en) | 2007-05-09 |
US7534277B2 (en) | 2009-05-19 |
US20060242912A1 (en) | 2006-11-02 |
KR100516886B1 (ko) | 2005-09-23 |
WO2004053968A1 (en) | 2004-06-24 |
JP2006509364A (ja) | 2006-03-16 |
TWI243849B (en) | 2005-11-21 |
EP1570512B1 (en) | 2010-01-13 |
CN100490082C (zh) | 2009-05-20 |
EP1570512A1 (en) | 2005-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4220966B2 (ja) | シリコンウエハの2次研磨用スラリー組成物 | |
KR100662546B1 (ko) | 실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법 | |
TWI406917B (zh) | 用於最後拋光矽晶圓之漿體組成物以及使用該組成物最後拋光矽晶圓之方法 | |
EP0962508B1 (en) | Use of a wafer edge polishing composition | |
JP6360311B2 (ja) | 研磨用組成物およびその製造方法 | |
TW201518488A (zh) | 研磨用組成物及其製造方法 | |
JP2003347248A (ja) | 半導体絶縁膜用cmp研磨剤及び基板の研磨方法 | |
JP2003347247A (ja) | 半導体絶縁膜用cmp研磨剤及び基板の研磨方法 | |
KR100289150B1 (ko) | 실리콘웨이퍼의최종연마용슬러리 | |
JP4430331B2 (ja) | 半導体ウェハ研磨用組成物 | |
KR100516884B1 (ko) | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 | |
JPWO2005029563A1 (ja) | シリコンウエハ研磨用組成物および研磨方法 | |
KR100645307B1 (ko) | 실리콘 웨이퍼용 경면 연마 슬러리 조성물 | |
KR100558259B1 (ko) | 실리콘 웨이퍼 경면연마용 슬러리 조성물 | |
KR20040057045A (ko) | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 | |
KR100754807B1 (ko) | 실리콘 웨이퍼 연마용 슬러리 조성물 및 이를 이용한연마방법 | |
JP2003347245A (ja) | 半導体絶縁膜用cmp研磨剤及び基板の研磨方法 | |
JP2003347246A (ja) | 半導体絶縁膜用cmp研磨剤及び基板の研磨方法 | |
Bae et al. | Performance of Polishing Slurries containing Silica Particles grown by Sol-Gel Method | |
KR20170117276A (ko) | 웨이퍼 연마용 cmp 슬러리 조성물과 이의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080226 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080523 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080530 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080625 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20081028 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20081114 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111121 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4220966 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111121 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121121 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121121 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131121 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |