JP4205294B2 - 基板処理装置及び方法 - Google Patents

基板処理装置及び方法 Download PDF

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Publication number
JP4205294B2
JP4205294B2 JP2000233593A JP2000233593A JP4205294B2 JP 4205294 B2 JP4205294 B2 JP 4205294B2 JP 2000233593 A JP2000233593 A JP 2000233593A JP 2000233593 A JP2000233593 A JP 2000233593A JP 4205294 B2 JP4205294 B2 JP 4205294B2
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JP
Japan
Prior art keywords
substrate
magnet
holding table
magnetic field
rotating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000233593A
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English (en)
Japanese (ja)
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JP2002053956A (ja
JP2002053956A5 (enExample
Inventor
純朗 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP2000233593A priority Critical patent/JP4205294B2/ja
Priority to US09/917,673 priority patent/US6616816B2/en
Publication of JP2002053956A publication Critical patent/JP2002053956A/ja
Publication of JP2002053956A5 publication Critical patent/JP2002053956A5/ja
Application granted granted Critical
Publication of JP4205294B2 publication Critical patent/JP4205294B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Thin Magnetic Films (AREA)
JP2000233593A 2000-08-01 2000-08-01 基板処理装置及び方法 Expired - Fee Related JP4205294B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000233593A JP4205294B2 (ja) 2000-08-01 2000-08-01 基板処理装置及び方法
US09/917,673 US6616816B2 (en) 2000-08-01 2001-07-31 Substrate processing device and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000233593A JP4205294B2 (ja) 2000-08-01 2000-08-01 基板処理装置及び方法

Publications (3)

Publication Number Publication Date
JP2002053956A JP2002053956A (ja) 2002-02-19
JP2002053956A5 JP2002053956A5 (enExample) 2008-07-17
JP4205294B2 true JP4205294B2 (ja) 2009-01-07

Family

ID=18726096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000233593A Expired - Fee Related JP4205294B2 (ja) 2000-08-01 2000-08-01 基板処理装置及び方法

Country Status (2)

Country Link
US (1) US6616816B2 (enExample)
JP (1) JP4205294B2 (enExample)

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US20030020889A1 (en) * 2000-08-02 2003-01-30 Nikon Corporation Stage unit, measurement unit and measurement method, and exposure apparatus and exposure method
JP2002090978A (ja) * 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置
JP4026750B2 (ja) * 2002-04-24 2007-12-26 東京エレクトロン株式会社 基板処理装置
KR100973666B1 (ko) * 2003-06-17 2010-08-03 주성엔지니어링(주) 원자층증착장치의 가스밸브 어셈블리
JP2005259870A (ja) * 2004-03-10 2005-09-22 Nikon Corp 基板保持装置、ステージ装置及び露光装置並びに露光方法
JP4393897B2 (ja) * 2004-03-12 2010-01-06 新明和工業株式会社 成膜装置
FR2871934B1 (fr) * 2004-06-16 2006-09-22 Ion Beam Services Sa Alimentation d'implanteur ionique prevue pour une limitation de l'effet de charge
FR2871812B1 (fr) * 2004-06-16 2008-09-05 Ion Beam Services Sa Implanteur ionique fonctionnant en mode plasma pulse
US20060281310A1 (en) * 2005-06-08 2006-12-14 Applied Materials, Inc. Rotating substrate support and methods of use
US7906170B2 (en) * 2007-03-27 2011-03-15 Intel Corporation Apparatus, method, and system capable of producing a moveable magnetic field
WO2009081953A1 (ja) * 2007-12-26 2009-07-02 Canon Anelva Corporation スパッタ装置、スパッタ成膜方法及び分析装置
JP5417325B2 (ja) 2008-05-30 2014-02-12 アルプス電気株式会社 磁気センサ及び磁気エンコーダ
JPWO2009154009A1 (ja) 2008-06-20 2011-11-24 キヤノンアネルバ株式会社 磁気抵抗素子の製造方法、スパッタ成膜チャンバー、スパッタ成膜チャンバーを有する磁気抵抗素子の製造装置、プログラム、記憶媒体
US7817463B2 (en) * 2008-06-30 2010-10-19 Qualcomm Incorporated System and method to fabricate magnetic random access memory
GB2487681B (en) * 2008-09-30 2013-01-23 Canon Anelva Corp Sputtering device and sputtering method
KR20110036850A (ko) 2008-12-03 2011-04-11 캐논 아네르바 가부시키가이샤 플라스마 처리 장치, 자기 저항 소자의 제조 장치, 자성 박막의 성막 방법 및 성막 제어 프로그램
WO2010073711A1 (ja) * 2008-12-26 2010-07-01 キヤノンアネルバ株式会社 スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法
WO2010100710A1 (ja) * 2009-03-02 2010-09-10 キヤノンアネルバ株式会社 基板処理装置、磁気デバイスの製造装置及び製造方法
KR101266778B1 (ko) 2009-06-24 2013-05-22 캐논 아네르바 가부시키가이샤 진공 가열/냉각 장치 및 자기저항 요소의 제조 방법
US20150125622A1 (en) * 2010-04-01 2015-05-07 The Trustees of Columbia University in HIe City of Systems and methods for high and ultra-high vacuum physical vapor deposition with in-situ magnetic field
CN104024467B (zh) * 2011-12-22 2016-10-12 佳能安内华股份有限公司 SrRuO3膜的沉积方法
US9279185B2 (en) * 2012-06-14 2016-03-08 Asm Technology Singapore Pte Ltd Feed-through apparatus for a chemical vapour deposition device
CN104465447B (zh) * 2013-09-17 2017-07-21 北京北方微电子基地设备工艺研究中心有限责任公司 载台升降装置、反应腔室及等离子体加工设备
CN104451586B (zh) * 2013-09-18 2017-02-08 北京北方微电子基地设备工艺研究中心有限责任公司 载台升降装置、反应腔室及等离子体加工设备
CN104726837B (zh) * 2013-12-18 2018-05-25 北京北方华创微电子装备有限公司 反应腔室及等离子体加工设备
GB201706284D0 (en) * 2017-04-20 2017-06-07 Spts Technologies Ltd A method and apparatus for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition
CN108008324B (zh) * 2017-12-13 2019-12-31 哈尔滨工业大学 一种圆柱形永磁体磁场检测装置
CN111101097A (zh) * 2018-10-26 2020-05-05 北京北方华创微电子装备有限公司 反应腔室及薄膜沉积设备
CN112011771B (zh) * 2019-05-30 2022-02-22 北京北方华创微电子装备有限公司 偏置磁场控制方法、磁性薄膜沉积方法、腔室及设备
CN113838793A (zh) * 2020-06-24 2021-12-24 拓荆科技股份有限公司 用于晶圆自动旋转的装置及设备
TWI741829B (zh) * 2020-10-13 2021-10-01 承洺股份有限公司 觸控面板自動化功能測試機構
CN114686830A (zh) * 2020-12-29 2022-07-01 珠海优特智厨科技有限公司 导磁层的制造方法、锅具及锅具的制造方法
KR102675105B1 (ko) * 2022-04-01 2024-06-14 세메스 주식회사 플라즈마 처리 장치

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JPH02133570A (ja) 1988-11-10 1990-05-22 Anelva Corp 複合体のスパッタ装置
JPH05339711A (ja) 1992-06-05 1993-12-21 Anelva Corp 真空蒸着装置
JPH0726378A (ja) 1993-07-13 1995-01-27 Nissin Electric Co Ltd 成膜装置における被成膜基体保持装置
JPH0936455A (ja) 1995-07-21 1997-02-07 Sony Corp 磁気抵抗効果素子
JPH0969460A (ja) 1995-09-01 1997-03-11 Kao Corp 磁気記録媒体の製造方法
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JPH11335821A (ja) 1998-05-20 1999-12-07 Japan Energy Corp 磁性薄膜形成用Ｎｉ−Ｆｅ合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ｎｉ−Ｆｅ合金スパッタリングターゲットの製造方法
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Publication number Publication date
JP2002053956A (ja) 2002-02-19
US20020017910A1 (en) 2002-02-14
US6616816B2 (en) 2003-09-09

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