JP4727764B2 - プラズマ処理装置、磁気抵抗素子の製造装置、磁性薄膜の成膜方法及び成膜制御プログラム - Google Patents
プラズマ処理装置、磁気抵抗素子の製造装置、磁性薄膜の成膜方法及び成膜制御プログラム Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims description 131
- 238000012545 processing Methods 0.000 title claims description 69
- 239000010409 thin film Substances 0.000 title claims description 63
- 239000010408 film Substances 0.000 title claims description 61
- 238000000034 method Methods 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title description 14
- 239000000758 substrate Substances 0.000 claims description 196
- 230000007246 mechanism Effects 0.000 claims description 31
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 230000005415 magnetization Effects 0.000 claims description 27
- 238000004544 sputter deposition Methods 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 12
- 238000012546 transfer Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 2
- 239000007789 gas Substances 0.000 description 31
- 238000010586 diagram Methods 0.000 description 11
- 229910019236 CoFeB Inorganic materials 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- 229910003321 CoFe Inorganic materials 0.000 description 5
- 239000000696 magnetic material Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910019041 PtMn Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000005374 Kerr effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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- C23C14/34—Sputtering
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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- G—PHYSICS
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
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- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
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- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
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- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
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Description
真空排気可能なチャンバの内部に処理ガスを導入し、カソードに放電電圧を印加して基板ホルダとの間でプラズマ放電を発生させ、前記カソードに取り付けられたターゲットをスパッタして基板の処理面に磁性薄膜を含む薄膜を成膜するプラズマ処理装置であって、
前記基板を支持する基板ホルダと、
前記基板ホルダの周囲に配設され、前記基板の処理面に磁場を形成する磁石を支持する磁石ホルダと、
前記基板ホルダの上方に配置され、放電電圧が印加されるカソードユニットと、
前記基板ホルダと前記磁石ホルダのうち少なくとも一方、または双方を前記基板の処理面の面方向に沿って回転可能な回転機構と、
前記基板ホルダまたは/および前記磁石ホルダの回転位置を検出する回転位置検出手段と、
成膜処理に伴う各操作要素の動作を制御する制御装置と、
を備え、
前記制御装置は前記回転位置検出手段の検出信号に基づいて、前記磁性薄膜のスパッタ成膜中に、前記基板の処理面に設定される磁化容易軸と前記磁石が印加する磁界との相対角をスイング変動させるように前記基板ホルダまたは/および前記磁石ホルダの前記回転機構を制御することを特徴とする。
上記本発明のプラズマ処理装置と、
基板の処理面の不純物を除去するエッチングチャンバと、
金属薄膜を酸化処理する酸化処理チャンバと、
真空空間と大気の間で前記基板を出し入れするロードロックチャンバと、
が真空搬送機構を備えた真空搬送チャンバを介して接続されていることを特徴とする。
前記磁性薄膜のスパッタ成膜中に、前記基板の処理面に設定される磁化容易軸と前記磁石が印加する磁界との相対角をスイング変動させるようにしたことを特徴とする。
前記基板の目印に対して垂直方向に磁界が形成されるように、前記基板および前記磁石を位置決めするステップと、
磁性薄膜のスパッタ成膜中に、前記基板の処理面に設定される磁化容易軸と前記磁石が印加する磁界との相対角を最大±5度の範囲内でスイング変動させるステップと、
成膜の進行につれて相対角の振れが徐々に収束するようにスイング変動させるステップと、
前記位置決め状態で静止させてスパッタ成膜するステップと、
を実行させることを特徴とする。
図5は、実施例1の磁性薄膜の成膜方法を示す模式図である。図6は、実施例1の基板と磁石の位置関係を示す平面図である。図7は、実施例1の動作を示すタイムチャートである。
図9は、実施例2の基板と磁石の位置関係を示す平面図である。図10は、実施例2の動作を示すタイムチャートである。
図11は、実施例3の基板と磁石の位置関係を示す平面図である。図12は、実施例3の動作を示すタイムチャートである。
実施例4では、基板10の斜め上方にカソードユニット50を配置した場合の磁性薄膜の成膜方法について説明する。図13は、実施例4の磁性薄膜の成膜方法を示す説明図である。図14は、実施例4の基板と磁石の位置関係を示す平面図である。図15は、実施例4の動作を示すタイムチャートである。
実施例5は、本発明に係るプラズマ処理装置をトンネル磁気抵抗素子の製造装置に適用する場合の適用例である。図16は、薄膜デバイスの製造装置の装置構成例を示す平面図である。
2 チャンバ
10 基板
11 基板ホルダ
20 基板ホルダの回転機構
25 基板ホルダの回転位置検出手段
30 磁石
31 磁石ホルダ
40 磁石ホルダの回転機構
45 磁石ホルダの回転位置検出手段
60 制御装置
Claims (9)
- 真空排気可能なチャンバの内部に処理ガスを導入し、カソードに放電電圧を印加して基板ホルダとの間でプラズマ放電を発生させ、前記カソードに取り付けられたターゲットをスパッタして基板の処理面に磁性薄膜を含む薄膜を成膜するプラズマ処理装置であって、
前記基板を支持する基板ホルダと、
前記基板ホルダの周囲に配設され、前記基板の処理面に磁場を形成する磁石を支持する磁石ホルダと、
前記基板ホルダの上方に配置され、放電電圧が印加されるカソードユニットと、
前記基板ホルダと前記磁石ホルダのうち少なくとも一方、または双方を前記基板の処理面の面方向に沿って回転可能な回転機構と、
前記基板ホルダまたは/および前記磁石ホルダの回転位置を検出する回転位置検出手段と、
成膜処理に伴う各操作要素の動作を制御する制御装置と、
を備え、
前記制御装置は前記回転位置検出手段の検出信号に基づいて、前記磁性薄膜のスパッタ成膜中に、前記基板の処理面に設定される磁化容易軸と前記磁石が印加する磁界との相対角をスイング変動させるように前記基板ホルダまたは/および前記磁石ホルダの前記回転機構を制御することを特徴とするプラズマ処理装置。 - 前記制御装置は、最大相対角が±5度の範囲内でスイング変動を制御することを特徴とする請求項1に記載のプラズマ処理装置。
- 前記制御装置は、磁性薄膜の成膜初期の最大相対角が±5度の範囲内であって、成膜の進行につれて相対角の振れが徐々に収束するようにスイング変動を制御することを特徴とする請求項1に記載のプラズマ処理装置。
- 請求項1から3のいずれかに記載のプラズマ処理装置と、
基板の処理面の不純物を除去するエッチングチャンバと、
金属薄膜を酸化処理する酸化処理チャンバと、
真空空間と大気の間で前記基板を出し入れするロードロックチャンバと、
が真空搬送機構を備えた真空搬送チャンバを介して接続されていることを特徴とする薄膜デバイスの製造装置。 - 真空排気可能なチャンバの内部に処理ガスを導入し、基板の周囲にその処理面に磁場を形成する磁石を配し、カソードに放電電圧を印加して基板ホルダとの間でプラズマ放電を発生させ、前記カソードに取り付けられたターゲットをスパッタして基板の処理面に磁性薄膜を成膜する方法であって、
前記磁性薄膜のスパッタ成膜中に、前記基板の処理面に設定される磁化容易軸と前記磁石が印加する磁界との相対角をスイング変動させるようにしたことを特徴とする磁性薄膜の成膜方法。 - 最大相対角が±5度の範囲内でスイング変動させることを特徴とする請求項5に記載の磁性薄膜の成膜方法。
- 前記磁性薄膜の成膜初期の最大相対角が±5度の範囲内であって、成膜の進行につれて相対角の振れが徐々に収束するようにスイング変動させることを特徴とする請求項5に記載の磁性薄膜の成膜方法。
- 基板を支持する基板ホルダまたは/および磁石を支持する磁石ホルダの回転位置を検出する回転位置検出手段の検出信号に基づいて、前記基板ホルダまたは/および前記磁石ホルダの回転機構の回転を制御する制御装置に、
前記基板の目印に対して垂直方向に磁界が形成されるように、前記基板および前記磁石を位置決めするステップと、
磁性薄膜のスパッタ成膜中に、前記基板の処理面に設定される磁化容易軸と前記磁石が印加する磁界との相対角を最大±5度の範囲内でスイング変動させるステップと、
成膜の進行につれて相対角の振れが徐々に収束するようにスイング変動させるステップと、
前記位置決め状態で静止させてスパッタ成膜するステップと、
を実行させることを特徴とする成膜制御プログラム。 - 請求項8に記載の成膜制御プログラムを記録したことを特徴とするコンピュータで読み取り可能な記録媒体。
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