JP4203132B2 - 発光素子及びその製造方法 - Google Patents

発光素子及びその製造方法 Download PDF

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Publication number
JP4203132B2
JP4203132B2 JP07930097A JP7930097A JP4203132B2 JP 4203132 B2 JP4203132 B2 JP 4203132B2 JP 07930097 A JP07930097 A JP 07930097A JP 7930097 A JP7930097 A JP 7930097A JP 4203132 B2 JP4203132 B2 JP 4203132B2
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JP
Japan
Prior art keywords
light emitting
bonding electrode
bonding
electrode
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP07930097A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10275942A5 (enExample
JPH10275942A (ja
Inventor
茂稔 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP07930097A priority Critical patent/JP4203132B2/ja
Priority to TW087104416A priority patent/TW392194B/zh
Priority to PCT/JP1998/001355 priority patent/WO1998044569A1/ja
Priority to US09/402,493 priority patent/US6583442B2/en
Priority to CNB988037610A priority patent/CN100346487C/zh
Priority to KR1019997008920A priority patent/KR20010005846A/ko
Publication of JPH10275942A publication Critical patent/JPH10275942A/ja
Publication of JPH10275942A5 publication Critical patent/JPH10275942A5/ja
Application granted granted Critical
Publication of JP4203132B2 publication Critical patent/JP4203132B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

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  • Led Devices (AREA)
JP07930097A 1997-03-31 1997-03-31 発光素子及びその製造方法 Expired - Lifetime JP4203132B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP07930097A JP4203132B2 (ja) 1997-03-31 1997-03-31 発光素子及びその製造方法
TW087104416A TW392194B (en) 1997-03-31 1998-03-24 Light emitting element and its manufacturing method
US09/402,493 US6583442B2 (en) 1997-03-31 1998-03-25 Light emitter device and a method for manufacturing the same
CNB988037610A CN100346487C (zh) 1997-03-31 1998-03-25 发光元件
PCT/JP1998/001355 WO1998044569A1 (fr) 1997-03-31 1998-03-25 Dispositif electroluminescent et son procede de fabrication
KR1019997008920A KR20010005846A (ko) 1997-03-31 1998-03-25 발광 소자 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07930097A JP4203132B2 (ja) 1997-03-31 1997-03-31 発光素子及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008228395A Division JP2008288624A (ja) 2008-09-05 2008-09-05 発光素子の製造方法

Publications (3)

Publication Number Publication Date
JPH10275942A JPH10275942A (ja) 1998-10-13
JPH10275942A5 JPH10275942A5 (enExample) 2004-12-24
JP4203132B2 true JP4203132B2 (ja) 2008-12-24

Family

ID=13686004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07930097A Expired - Lifetime JP4203132B2 (ja) 1997-03-31 1997-03-31 発光素子及びその製造方法

Country Status (6)

Country Link
US (1) US6583442B2 (enExample)
JP (1) JP4203132B2 (enExample)
KR (1) KR20010005846A (enExample)
CN (1) CN100346487C (enExample)
TW (1) TW392194B (enExample)
WO (1) WO1998044569A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
JP3285341B2 (ja) 2000-06-01 2002-05-27 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP3466144B2 (ja) 2000-09-22 2003-11-10 士郎 酒井 半導体の表面を荒くする方法
JP2002164570A (ja) * 2000-11-24 2002-06-07 Shiro Sakai 窒化ガリウム系化合物半導体装置
JP3548735B2 (ja) 2001-06-29 2004-07-28 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP2003110139A (ja) * 2001-09-28 2003-04-11 Sanyo Electric Co Ltd 窒化物系半導体発光素子
US20030132433A1 (en) * 2002-01-15 2003-07-17 Piner Edwin L. Semiconductor structures including a gallium nitride material component and a silicon germanium component
TW543169B (en) * 2002-02-08 2003-07-21 Ritdisplay Corp Package structure and process of organic light-emitting diode panel
US7005685B2 (en) 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device
KR100497127B1 (ko) * 2002-09-05 2005-06-28 삼성전기주식회사 질화갈륨계 반도체 엘이디 소자
KR100543696B1 (ko) * 2002-09-09 2006-01-20 삼성전기주식회사 고효율 발광 다이오드
JP4635985B2 (ja) * 2002-10-03 2011-02-23 日亜化学工業株式会社 発光ダイオード
TW569409B (en) * 2002-10-22 2004-01-01 Ritek Display Technology Corp Process for packaging an OLED panel
WO2004047189A1 (en) * 2002-11-16 2004-06-03 Lg Innotek Co.,Ltd Light emitting device and fabrication method thereof
US20050051781A1 (en) * 2003-09-08 2005-03-10 United Epitaxy Company, Ltd. Light emitting diode and method of making the same
JP2005259891A (ja) * 2004-03-10 2005-09-22 Toyoda Gosei Co Ltd 発光装置
WO2006137711A1 (en) 2005-06-22 2006-12-28 Seoul Opto-Device Co., Ltd. Light emitting device and method of manufacturing the same
KR100661614B1 (ko) 2005-10-07 2006-12-26 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
JP5326225B2 (ja) * 2006-05-29 2013-10-30 日亜化学工業株式会社 窒化物半導体発光素子
JP5250856B2 (ja) 2006-06-13 2013-07-31 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
TW201448263A (zh) 2006-12-11 2014-12-16 美國加利福尼亞大學董事會 透明發光二極體
WO2008155960A1 (ja) * 2007-06-15 2008-12-24 Rohm Co., Ltd. 半導体発光素子
WO2009015386A1 (en) 2007-07-26 2009-01-29 The Regents Of The University Of California Light emitting diodes with a p-type surface
USD578536S1 (en) * 2007-08-27 2008-10-14 Podium Photonics (Guangzhou) Ltd. Chip
USD579019S1 (en) * 2007-08-27 2008-10-21 Podium Photonics (Guangzhou) Ltd. Chip
JPWO2011111642A1 (ja) * 2010-03-08 2013-06-27 日亜化学工業株式会社 半導体発光素子及びその製造方法
US8785952B2 (en) * 2011-10-10 2014-07-22 Lg Innotek Co., Ltd. Light emitting device and light emitting device package including the same
KR102546307B1 (ko) * 2015-12-02 2023-06-21 삼성전자주식회사 발광 소자 및 이를 포함하는 표시 장치
US11233176B2 (en) 2017-03-08 2022-01-25 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device and semiconductor device package
CN108039126B (zh) * 2017-12-07 2021-04-23 大连海事大学 一种led阵列走线方法及显示屏系统
JP6803595B1 (ja) * 2020-09-16 2020-12-23 アルディーテック株式会社 半導体発光素子チップ集積装置およびその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
JPH07288340A (ja) * 1994-04-19 1995-10-31 Mitsubishi Cable Ind Ltd 発光素子およびその製造方法
US5751013A (en) * 1994-07-21 1998-05-12 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof
JP3318698B2 (ja) * 1994-09-30 2002-08-26 ローム株式会社 半導体発光素子
JP3841460B2 (ja) * 1995-03-13 2006-11-01 豊田合成株式会社 半導体光素子
JPH0964418A (ja) 1995-08-22 1997-03-07 Fujitsu Ltd 発光素子及びその製造方法
JPH0964477A (ja) * 1995-08-25 1997-03-07 Toshiba Corp 半導体発光素子及びその製造方法
EP0852817A1 (en) * 1995-09-25 1998-07-15 Nippon Sheet Glass Co., Ltd. Surface light-emitting element and self-scanning type light-emitting device
US6107644A (en) * 1997-01-24 2000-08-22 Rohm Co., Ltd. Semiconductor light emitting device

Also Published As

Publication number Publication date
US6583442B2 (en) 2003-06-24
KR20010005846A (ko) 2001-01-15
US20020121637A1 (en) 2002-09-05
CN1251688A (zh) 2000-04-26
CN100346487C (zh) 2007-10-31
JPH10275942A (ja) 1998-10-13
TW392194B (en) 2000-06-01
WO1998044569A1 (fr) 1998-10-08

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