CN100346487C - 发光元件 - Google Patents

发光元件 Download PDF

Info

Publication number
CN100346487C
CN100346487C CNB988037610A CN98803761A CN100346487C CN 100346487 C CN100346487 C CN 100346487C CN B988037610 A CNB988037610 A CN B988037610A CN 98803761 A CN98803761 A CN 98803761A CN 100346487 C CN100346487 C CN 100346487C
Authority
CN
China
Prior art keywords
semiconductor layer
type semiconductor
light
welding electrode
conductive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB988037610A
Other languages
English (en)
Chinese (zh)
Other versions
CN1251688A (zh
Inventor
伊藤茂稔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of CN1251688A publication Critical patent/CN1251688A/zh
Application granted granted Critical
Publication of CN100346487C publication Critical patent/CN100346487C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Landscapes

  • Led Devices (AREA)
CNB988037610A 1997-03-31 1998-03-25 发光元件 Expired - Lifetime CN100346487C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP07930097A JP4203132B2 (ja) 1997-03-31 1997-03-31 発光素子及びその製造方法
JP79300/1997 1997-03-31
JP79300/97 1997-03-31

Publications (2)

Publication Number Publication Date
CN1251688A CN1251688A (zh) 2000-04-26
CN100346487C true CN100346487C (zh) 2007-10-31

Family

ID=13686004

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB988037610A Expired - Lifetime CN100346487C (zh) 1997-03-31 1998-03-25 发光元件

Country Status (6)

Country Link
US (1) US6583442B2 (enExample)
JP (1) JP4203132B2 (enExample)
KR (1) KR20010005846A (enExample)
CN (1) CN100346487C (enExample)
TW (1) TW392194B (enExample)
WO (1) WO1998044569A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
JP3285341B2 (ja) 2000-06-01 2002-05-27 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP3466144B2 (ja) 2000-09-22 2003-11-10 士郎 酒井 半導体の表面を荒くする方法
JP2002164570A (ja) * 2000-11-24 2002-06-07 Shiro Sakai 窒化ガリウム系化合物半導体装置
JP3548735B2 (ja) 2001-06-29 2004-07-28 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP2003110139A (ja) * 2001-09-28 2003-04-11 Sanyo Electric Co Ltd 窒化物系半導体発光素子
US20030132433A1 (en) * 2002-01-15 2003-07-17 Piner Edwin L. Semiconductor structures including a gallium nitride material component and a silicon germanium component
TW543169B (en) * 2002-02-08 2003-07-21 Ritdisplay Corp Package structure and process of organic light-emitting diode panel
US7005685B2 (en) 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device
KR100497127B1 (ko) * 2002-09-05 2005-06-28 삼성전기주식회사 질화갈륨계 반도체 엘이디 소자
KR100543696B1 (ko) * 2002-09-09 2006-01-20 삼성전기주식회사 고효율 발광 다이오드
JP4635985B2 (ja) * 2002-10-03 2011-02-23 日亜化学工業株式会社 発光ダイオード
TW569409B (en) * 2002-10-22 2004-01-01 Ritek Display Technology Corp Process for packaging an OLED panel
WO2004047189A1 (en) * 2002-11-16 2004-06-03 Lg Innotek Co.,Ltd Light emitting device and fabrication method thereof
US20050051781A1 (en) * 2003-09-08 2005-03-10 United Epitaxy Company, Ltd. Light emitting diode and method of making the same
JP2005259891A (ja) * 2004-03-10 2005-09-22 Toyoda Gosei Co Ltd 発光装置
EP2750194A1 (en) 2005-06-22 2014-07-02 Seoul Viosys Co., Ltd. Light emitting device comprising a plurality of light emitting diode cells
KR100661614B1 (ko) 2005-10-07 2006-12-26 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
JP5326225B2 (ja) * 2006-05-29 2013-10-30 日亜化学工業株式会社 窒化物半導体発光素子
JP5250856B2 (ja) 2006-06-13 2013-07-31 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
WO2008073400A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Transparent light emitting diodes
KR20100047219A (ko) * 2007-06-15 2010-05-07 로무 가부시키가이샤 반도체 발광 소자
EP2174351A1 (en) * 2007-07-26 2010-04-14 The Regents of the University of California Light emitting diodes with a p-type surface
USD579019S1 (en) * 2007-08-27 2008-10-21 Podium Photonics (Guangzhou) Ltd. Chip
USD578536S1 (en) * 2007-08-27 2008-10-14 Podium Photonics (Guangzhou) Ltd. Chip
US8698188B2 (en) * 2010-03-08 2014-04-15 Nichia Corporation Semiconductor light emitting device and method for producing the same
US8785952B2 (en) * 2011-10-10 2014-07-22 Lg Innotek Co., Ltd. Light emitting device and light emitting device package including the same
KR102546307B1 (ko) * 2015-12-02 2023-06-21 삼성전자주식회사 발광 소자 및 이를 포함하는 표시 장치
WO2018164371A1 (ko) * 2017-03-08 2018-09-13 엘지이노텍 주식회사 반도체 소자 및 반도체 소자 패키지
CN108039126B (zh) * 2017-12-07 2021-04-23 大连海事大学 一种led阵列走线方法及显示屏系统
JP6803595B1 (ja) * 2020-09-16 2020-12-23 アルディーテック株式会社 半導体発光素子チップ集積装置およびその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07288340A (ja) * 1994-04-19 1995-10-31 Mitsubishi Cable Ind Ltd 発光素子およびその製造方法
JPH08102550A (ja) * 1994-09-30 1996-04-16 Rohm Co Ltd 半導体発光素子
JPH08250769A (ja) * 1995-03-13 1996-09-27 Toyoda Gosei Co Ltd 半導体光素子
JPH0964418A (ja) * 1995-08-22 1997-03-07 Fujitsu Ltd 発光素子及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0952617B1 (en) * 1993-04-28 2004-07-28 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
DE69533511T2 (de) * 1994-07-21 2005-09-15 Matsushita Electric Industrial Co., Ltd., Kadoma Lichtemittierende halbleitervorrichtung und herstellungsverfahren
JPH0964477A (ja) 1995-08-25 1997-03-07 Toshiba Corp 半導体発光素子及びその製造方法
EP0852817A1 (en) * 1995-09-25 1998-07-15 Nippon Sheet Glass Co., Ltd. Surface light-emitting element and self-scanning type light-emitting device
US6107644A (en) * 1997-01-24 2000-08-22 Rohm Co., Ltd. Semiconductor light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07288340A (ja) * 1994-04-19 1995-10-31 Mitsubishi Cable Ind Ltd 発光素子およびその製造方法
JPH08102550A (ja) * 1994-09-30 1996-04-16 Rohm Co Ltd 半導体発光素子
JPH08250769A (ja) * 1995-03-13 1996-09-27 Toyoda Gosei Co Ltd 半導体光素子
JPH0964418A (ja) * 1995-08-22 1997-03-07 Fujitsu Ltd 発光素子及びその製造方法

Also Published As

Publication number Publication date
CN1251688A (zh) 2000-04-26
KR20010005846A (ko) 2001-01-15
US6583442B2 (en) 2003-06-24
US20020121637A1 (en) 2002-09-05
JP4203132B2 (ja) 2008-12-24
WO1998044569A1 (fr) 1998-10-08
JPH10275942A (ja) 1998-10-13
TW392194B (en) 2000-06-01

Similar Documents

Publication Publication Date Title
CN100346487C (zh) 发光元件
JP6917417B2 (ja) 光電素子及びその製造方法
CN1220280C (zh) 氮化物半导体光发射装置及其制造方法
US9123623B2 (en) Semiconductor light emitting device having multi-cell array and method of manufacturing the same
CN1941437A (zh) 氮化镓基半导体发光二极管及其制造方法
CN1886827A (zh) 经表面粗化的高效氮化镓基发光二极管
CN1471735A (zh) 在ⅲ-v族氮化物半导体基板上制作产生辐射的半导体芯片的方法以及产生辐射的半导体芯片
CN1945866A (zh) 用于制造垂直结构的发光二极管的方法
CN1870312A (zh) 制造发光二极管的方法
JP2012256918A (ja) 窒化物系半導体発光素子及びその製造方法
JP4698411B2 (ja) 垂直構造の窒化物半導体発光素子の製造方法
US8120042B2 (en) Semiconductor light emitting device
US20110155997A1 (en) Vertical Light emitting diode and manufacturing method of the same
CN1741294A (zh) 半导体发光器件和制造半导体发光器件的方法
CN1993837A (zh) 用于半导体发光器件的正电极
CN1943050A (zh) 化合物半导体发光器件晶片的制造方法
CN1305633C (zh) 带有用于改善光提取的锥形侧壁的激光分离的管芯
CN102347415A (zh) 半导体发光器件及其制造方法
CN1577904A (zh) 氮化物基化合物半导体发光器件及其制造方法
CN1147010C (zh) 自钝化非平面结三族氮化物半导体器件及其制造方法
CN1855564A (zh) 发光装置、用于制造该发光装置的方法及氮化物半导体衬底
CN110212069A (zh) 发光二极管芯片及其制作方法
CN1523682A (zh) 半导体发光元件
CN1866557A (zh) 发光器件及其制造方法,以及氮化物半导体衬底
JP2010287761A (ja) 半導体発光素子、半導体発光素子の製造方法、半導体発光素子を備えたランプ、照明装置および電子機器

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20071031