Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/83—Electrodes
  • H10H20/831—Electrodes characterised by their shape
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/822—Materials of the light-emitting regions
  • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
  • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/484—Connecting portions
  • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
  • H01L2224/491—Disposition
  • H01L2224/49105—Connecting at different heights
  • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Definitions

• the present invention relates to a light emitting device and a method for manufacturing the same.
• semiconductor light-emitting devices such as LEDs that emit light in the ultraviolet to visible region have been realized by using nitride semiconductor materials typified by GaN, A1N, InN, or a mixed crystal thereof. I have.
• a sapphire substrate which is mainly an insulator, is used as a substrate. Therefore, unlike ordinary light emitting devices, it is necessary to take both pn electrodes from the device surface, and various structures have been proposed for that purpose.
• the light emitting device shown in FIGS. 7 (a) and (b) has an n-GaN layer 2, an InGaN light-emitting layer 3, a p-GaN layer 4 and a p transparent electrode on a sapphire substrate 1. 6 are sequentially formed. In the n-GaN layer 2, a part of the surface is removed in a part thereof, together with the InGaN light-emitting layer 3 and the p-GaN layer 4 formed thereon. The n-bonding electrode 5 is directly connected to the region. Also, a p-bonding electrode is formed on a part of the p transparent electrode 6. Pole 7 is connected. Further, a ball 8 and a bonding wire 9 are connected on the n-bonding electrode 5 and the p-bonding electrode 7.
• the p-electrode may be formed over almost the entire surface of the light-emitting layer 3, but in order to extract light emission from the light-emitting layer 3, a transparent electrode is used as the p-electrode. Therefore, it is necessary to use an extremely thin metal film, for example, a film thickness of about 1 O nm. However, it is difficult to wire bond such an ultra-thin film. Therefore, in the above light emitting element, the p electrode is the p transparent electrode 6, and a sufficiently thick and opaque P bonding electrode 7 is formed on a part thereof.
• a first bonding electrode connected to the first conductivity type semiconductor layer
• a second bonding connected to substantially the entire surface of the second conductivity type semiconductor layer
• the substrate is transparent to light emitted from near the junction between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,
• the second bonding electrode has a substantially rectangular shape and is formed with a substantially minimum area for bonding, and element side surfaces are arranged in three directions around the second bonding electrode.
• a first bonding electrode connected to the first conductivity type semiconductor layer
• a second electrode connected to substantially the entire surface of the second conductivity type semiconductor layer
• the substrate may include the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. Transparent to light emitted from near the junction with
• the second electrode comprises a second bonding electrode and a second transparent electrode
• the second bonding electrode has a substantially rectangular shape and is formed with a substantially minimum area for bonding, and element side surfaces are arranged in three directions around the second bonding electrode.
• a method of manufacturing a light emitting device in which each semiconductor layer and each electrode are arranged such that two bonding electrodes are adjacent to each other and the first bonding electrode and the second electrode are adjacent to each other in a lateral direction.
• FIG. 1 shows a light emitting device of the present invention, wherein (a) is a schematic plan view and (b) is a schematic sectional view.
• FIG. 2 is a schematic plan view showing the arrangement of the light emitting devices on a wafer in the manufacturing process of the light emitting device of the present invention.
• FIG. 3 is a diagram for explaining an electrode arrangement of a light emitting element for performing a comparative experiment of luminous efficiency.
• FIG. 4 is a diagram showing the light emission intensity of each light emitting element shown in FIG.
• FIG. 5 is another light emitting device of the present invention, wherein (a) is a schematic plan view and (b) is a schematic sectional view.
• FIGS. 6A and 6B show still another light emitting device of the present invention, wherein FIG. 6A is a schematic plan view and FIG. 6B is a schematic sectional view.
• FIG. 7A and 7B show a conventional light-emitting element, in which FIG. 7A is a schematic plan view, and FIG. 7B is a schematic cross-sectional view taken along line AA ′ in FIG. Embodiment of the Invention
• the light emitting device of the present invention mainly comprises a first conductive semiconductor layer, a second conductive semiconductor layer, a first bonding electrode, and a second bonding electrode formed on a substrate, or includes The first conductive type semiconductor layer, the second conductive type semiconductor layer, the first bonding electrode, and the second electrode are formed.
• the substrate is not particularly limited as long as the substrate is usually used as a substrate of a light-emitting element.
• light having a wavelength near the light emitted from the light-emitting element to be obtained that is, light having a wavelength near the light emitted Must be small enough for transmission.
• semiconductor substrates such as silicon and germanium, compound semiconductor substrates such as SiGe, SiC, GaP, GaAsP, and GaN, and dielectrics such as sapphire, quartz, and Zn It can be selected according to the emission wavelength from the body substrate or the like.
• the semiconductor layer in the light emitting device of the present invention has at least one layer of the first conductivity type. It comprises a semiconductor layer and a second conductivity type semiconductor layer.
• first conductivity type and second conductivity type are terms indicating either pn or i type.
• These semiconductor layers may be composed of semiconductors having the same composition, or may be composed of semiconductors having different compositions.
• these semiconductor layers may have a first or second conductivity type, or a different conductivity type from the two types, between the substrate, between the semiconductor layers, or between the semiconductor layer and the first bonding electrode or the second electrode. It may be through an intermediate layer or a buffer layer of the mold.
• IE group element nitride semiconductor i.e., nitride gully ⁇ beam based semiconductor
• I n S A 1 t G a, t N (0 ⁇ s, 0 ⁇ t, s + t ⁇ 1) , such as A l s G a s A s (0 ⁇ s ⁇ 1) G as A s!-S P (0 ⁇ s ⁇ 1)
• I ns A 1 t G a s -t P (0 ⁇ s, 0 ⁇ t, s + t ⁇ 1)
• I ns A 1 t G a s -t P (0 ⁇ s, 0 ⁇ t, s + t ⁇ 1)
• I ns A 1 t G a, s _t N In s A 1 t G a, _ s _t N x A s (0 ⁇ s 0 ⁇ ts + t ⁇ 1, 0
• These semiconductor layers may be n-type or p-type impurities, for example, CSiGeSnBeZnCdHgMg0S
• the semiconductor layer may contain impurities such as Se and Te at a concentration of about 1 ⁇ 10 14 to 1 ⁇ 10 21 cm— 3 , and may not contain impurities. It can be formed by a method such as MOC VD (metal organic chemical vapor deposition), MBE (molecular beam epitaxy), MOMBE, or GS MBE (gas source molecular beam epitaxy).
• the impurity may be doped at the same time as the formation of the semiconductor layer, or may be doped by ion implantation or thermal diffusion after the formation of the semiconductor layer.
• the size of the region to which the first bonding electrode is connected may be any as long as it has an area necessary for bonding, for example, 50 to 300 X 50 to 300 ⁇ mz Or about 5 to 50% of the total area of the first conductivity type semiconductor layer forming one light emitting element.
• the thickness of the removed surface layer is about 0.5 to 10 m, or about 10 to 70% of the total thickness of the first conductivity type semiconductor layer.
• a known method can be used. Specifically, using a mask having an opening only in the part to be partially removed, a wet etching method using an acidic solution or an alkaline solution, or a RIE (reactive reaction) using various gases. Ion etching) method. For example, in group III nitride semiconductors, the RIE method using a gas containing a halogen element is effective. 2 gas or SiC14 gas can be used.
• the second conductivity type semiconductor layer is formed only on a partial region of the first conductivity type semiconductor layer.
• the size can be appropriately adjusted depending on the emission intensity of the light-emitting element to be finally obtained, for example, about 30 to 90% of the total area of the first conductive semiconductor layer. .
• the second conductivity type semiconductor layer can be formed by a method similar to the first conductivity type.
• processing into a desired shape can be realized by a method similar to the method of removing a part of the surface of the first conductivity type semiconductor layer as described above.
• these semiconductor layers are preferably formed in a rectangular shape, respectively, since the outer shape of the LED chip is usually rectangular.
• the term “rectangular shape” includes not only a rectangular shape but also a square shape, a trapezoidal shape, and a parallelogram shape, and a shape in which some or all of the corners are rounded, that is, a semicircular shape. It is sufficient if these can be arranged so that the space is not wasted so much in the LED chip, including a shape close to a semi-elliptical shape and a shape close to a semi-elliptical shape.
• the first bonding electrode in the light emitting device of the present invention is an electrode formed on the first conductive type semiconductor layer, and can be formed of a normal conductive material.
• a normal conductive material For example, A and In, Ga, Ni, Ti, Cu, Au, Ag, Cr, Si, W, WN, Pt, Pd, Ta, Sr, etc. .
• These materials may be formed as a single-layer film or a laminated film such as TiZAu or WZAu.
• the film thickness is not particularly limited, and may be, for example, about 0.5 zm or more, preferably about 1 m or more, and about m or less.
• the size only needs to have an area necessary for bonding, and as described above, for example, about 50 to 300 ⁇ 50 to 300 ⁇ m 2 .
• the shape is not particularly limited, a rectangular shape is preferable.
• the method of forming the first bonding electrode can be appropriately selected in consideration of the material to be used.
• a sputtering method a vacuum evaporation method, an EB evaporation method, an ion plating method, an MBE method, a plating method
• the screen printing method is exemplified.
• the first bonding electrode is usually formed with a wire for making an electrical connection to the outside. Further, a pole may be formed to strengthen the connection between the first bonding electrode and the wire. These wires and balls can use commonly used materials.
• the second electrode in the light emitting device of the present invention is an electrode formed on substantially the entire surface of the second conductivity type semiconductor layer.
• the second electrode when the second electrode is formed only for bonding to the second conductivity type semiconductor layer, it may be formed by the same material, the same film thickness, and the same method as described above. it can.
• the size of the second electrode is preferably formed with a substantially minimum area for bonding, for example, about 50 to 300 ⁇ 50 to 300 m 2 , preferably 1 to 300 m 2. Approximately 0 to 200 x 100 to 200 ⁇ m2, or a first conductivity type semiconductor that constitutes one light emitting element About 20 to 90% of the area of the whole layer is mentioned.
• the second electrode is preferably formed in a rectangular shape or a substantially rectangular shape.
• the film thickness is, for example, about 0.5 to 10 / m.
• in three directions around the second electrode that is, immediately below or near the three sides of the side opposite to the side closest to the first bonding electrode and the two sides adjacent to the side. It is preferable that the side surface of the light emitting element is formed directly below.
• the second electrode is formed of a second bonding electrode and a second transparent electrode.
• the second bonding electrode can be formed by the same material, the same thickness, and the same method as described above.
• the size of the second electrode is preferably formed with a substantially minimum area for bonding, as in the case of the above (1). For example, 50 to 300 ⁇ 5 0 ⁇ 3 0 0 m 2 approximately, or 5-6 0% of one area of the entire first conductive type semiconductor layer constituting the light emitting element, 1 0-9 whole area of the second conductivity type semiconductor layer 0 %.
• the second bonding electrode is preferably formed in a rectangular shape or a substantially rectangular shape. Furthermore, three directions around the second bonding electrode, that is, three sides immediately below or near the three sides of the side opposite to the side closest to the first bonding electrode and the two sides adjacent to that side. It is preferable that the side surface of the light emitting element is formed directly below.
• the second transparent electrode is electrically connected to the second bonding electrode. And may be formed almost directly on the second conductivity type semiconductor layer from immediately below the second bonding electrode, or may be formed on the second bonding electrode except for securing a minimum connection with the second bonding electrode. It may be formed so as not to overlap with the electrode.
• the second transparent electrode is formed of an electrode material capable of efficiently extracting light emitted from the light emitting element.
• the transmittance of the emitted light is preferably about 30 to 100%.
• the electrode material for example, A l, A u, N i, P d, T i, C r, T a, P t, a metal such as S r, S N_ ⁇ z, Z n O, such as I TO A transparent conductive material or the like can be given. These materials may be formed as either a single-layer film or a laminated film. The film thickness can be appropriately adjusted so as to have an appropriate translucency when the above-mentioned material is used.
• the transmissive electrode itself has a sufficiently small lateral resistance as compared with the semiconductor layer.
• the range is preferably about 1 to 10 nmZl to 10 nm.
• the thickness is preferably about 2 to 20 nm, and more preferably about 2 to 10 nm.
• the method of forming the second transparent electrode can be appropriately selected depending on the material to be used, and examples thereof include a sputtering method, a vacuum evaporation method, an EB evaporation method, an ion plating method, and an MBE method. Can be.
• the first bonding electrode, the second transparent electrode, and the second bonding electrode having a substantially square shape are arranged in a line.
• a plurality of light emitting elements are formed collectively, instead of being formed individually. That is, at least one first conductive semiconductor layer, at least one second conductive semiconductor layer, first bonding electrode, and second electrode that constitute a plurality of light emitting elements are vertically arranged on the substrate. A plurality is formed in the direction and the lateral direction. Thereafter, the obtained substrate is divided into one unit of the light emitting element, and in some cases, two or more units. At this time, each semiconductor layer and each electrode should be arranged such that the first bonding electrodes and the second electrodes are adjacent to each other in the vertical direction, and the first bonding electrode and the second electrode are adjacent to each other in the horizontal direction. Is preferred. When the second electrode is composed of the second bonding electrode and the second transparent electrode, it is preferable to arrange the first bonding electrode and the second bonding electrode so as to be adjacent in the lateral direction.
• the first bonding electrode and the second electrode may be formed adjacent to each other, but a plurality of the first bonding electrodes or a plurality of the second electrodes are integrally formed. It may be done.
• the light emitting elements integrally formed as described above can be formed by known methods, for example, scribing, dicing, laser cutting. It can be divided by a method or the like.
• the substrate is adjusted to a thickness of about 50 to 200 m, then the wafer is scribed with a diamond point, and the wafer is divided into chips along scribe grooves.
• the substrate is adjusted to a thickness of about 100 to 500 m, and then the wafer is cut by a rotary blade with a hardened diamond abrasive flow to divide the wafer into chips.
• the laser primary cutting method can be used C_ ⁇ 2 laser one excimer one
• the or YLF laser first light, the cutting of the support Fuaiya substrate may be used K r F excimer laser with a wavelength of 2 4 8 nm .
• FIGS. 1A and 1B show a blue light emitting device of this embodiment.
• This light-emitting element 100 absorbs almost no visible light, and has an n-type GaN layer 102 and InGa on an sapphire substrate 101 that is transparent at the emission wavelength of this light-emitting element.
• An N light emitting layer 103 and a p-type GaN layer 104 are sequentially formed. In some regions, the n-type GaN layer 102, along with the InGaN light-emitting layer 103 and the p-type GaN layer 104 formed thereon, The part is removed, and the n-bonding electrode 105 is directly connected to the area.
• a p-band electrode 107 is connected to a part of the p-transparent electrode 106.
• n bondi A ball 108 and a bonding wire 109 are connected to the bonding electrode 105 and the p-bonding electrode 107.
• an n-bonding electrode 105, a p-transparent electrode 106, and a p-bonding electrode 107 were arranged in a line. Note that, in FIG. 1 (a), the pole 108 and the bonding wire 109 are omitted for easy viewing.
• an n-type GaN layer 102, an InGaN light-emitting layer 103, and a p-type GaN layer 104 are sequentially formed on 101 on a sapphire substrate with a thickness of 30 O ⁇ m. Laminate.
• the p-type GaN layer 104, the InGaN light-emitting layer 103, and the A part of the surface of the n-type GaN layer 102 is removed.
• a p-type transparent electrode 106 composed of a NiZAu film having a thickness of about 15 nm is formed. At this time, the size of the p transparent electrode 106 was about 150 ⁇ 350 m 2 . Further, an n-bonding electrode 105 of an A 1 film having a thickness of about 1 m is formed on the n-type GaN layer 102.
• a p-bonding electrode 107 made of an 811 film having a thickness of about 1 ⁇ 111 is formed on the p-transparent electrode 106.
• the p-bonding electrode 107 is particularly provided because it is difficult to bond the p-transparent electrode 106 which is an extremely thin metal film. It is. Further, the size of the p-bonding electrode 107 needs to be minimized in consideration of light emission extraction, and has a square shape of 200 im on each side.
• each bonding electrode 10 is generally performed on a plurality of light-emitting elements as shown in FIG. That is, each bonding electrode 10
• 107 are formed in a connected state, and are later manufactured by dividing the light emitting element 100 into one unit.
• a characteristic test of the light emitting element 100 is performed on the substrate 101. This is a process in which a probe is applied to the p-bonding electrode 107 and the n-bonding electrode 105, a current is appropriately applied, and an inspection is performed to determine whether desired characteristics are obtained with respect to device voltage, light emission intensity, and the like. It is.
• the light emitting element 100 is formed so as to be connected to each of the bonding electrodes 105 and 107 by four units. Therefore, it is possible to inspect four units at a time.
• the bonding electrodes 105 and 107 to which the probe is applied are continuously arranged in a row, so that the probe is bonded in the inspection process. Only by moving along electrodes 105 and 107, for example, without inadvertently damaging p-transparent electrode 106, and without dropping dust etc. on probe p-transparent electrode 106 from probe Inspection can be performed, and the production yield is improved.
• each light emitting element shown in FIG. 2 is divided.
• Each of the divided elements is picked up by a collet (vacuum suction device) and transported as needed.
• a collet vacuum suction device
• both ends of the element p-bonding electrode 107, n-bonding electrode
• a collet that makes contact with the side on which the 106 is formed If a collet that makes contact with the side on which the 106 is formed) is used, both ends of the element will be fixed and stable transport will be possible, and a bonding electrode will be attached to both ends of the element. Since there is only one, the light extraction part of the element is not damaged.
• each element is fixed to an appropriate pedestal not shown in FIG. 1, and a bonding wire 109 is bonded on the n-bonding electrode 105 and the p-bonding electrode 107.
• a ball 108 is formed at the tip of the bonding wire 109, whereby a strong wire bonding is completed.
• the light emitting element 100 As shown in FIG. 1 (a), three of the four directions around the square P-bonding electrode 107 are side surfaces of the light emitting element 100. . That is, the light-emitting layer 103 and the side surface of the substrate 101 transparent to light emission are exposed in three directions. Therefore, the light emission immediately below the p-bonding electrode 107, which is insufficient with the conventional light emitting element, can be efficiently taken out. The effect of the arrangement of each electrode on the light emitting element on the luminous efficiency was tested.
• a light emitting device having element side surfaces in two directions was formed by changing the area of the light emitting portion variously, and the difference in light emission intensity when currents of the same current density were injected was compared.
• the left column in FIG. 3 shows light emitting elements having element side surfaces in three directions around the p-bonding electrode.
• the area of the p-bonding electrode is 1, the three types of elements when the area of the light emitting portion (the sum of the areas of the P-bonding electrode and the p-transparent electrode) are 1, 2, and 3 are shown.
• an element having a light emitting area of 1 indicates an element having no transparent electrode formed thereon
• an element of 2 indicates an element having a transparent electrode having the same area as the p-bonding electrode.
• the right column is a light emitting element having element side surfaces in two directions around the p-bonding electrode.
• the area of the light emitting section is the same as above.
• the size of the p-bonding electrode was fixed to a square shape of 200 m on a side, and the thickness of the sapphire substrate was fixed to 300 m. A current of 1 OmA per area was injected.
• FIG. 4 shows the results.
• FIG. 4 relatively shows the light emission intensity of each light emitting element shown in FIG.
• the light emitting element having the element side surfaces in the directions had higher emission intensity than the light emitting element having the element side surfaces in the two directions.
• Fig. 4 show that the substrate thickness hardly changes in the range of 60 to 400 jum, and the appropriate size range of the p-bonding electrode is 100 to 200 X even 1 0 0 ⁇ 2 0 0 m 2 was hardly changed.
• the size of the p-bonding electrode be small, but it is necessary to secure an area required for bonding. Also, the size of the light emitting section needs to be appropriately set so that the injection current density does not become excessive. This is because, if the injection current density is excessively high, heat generation lowers the luminous efficiency and adversely affects the device life. Therefore, p formed to cover the light emitting part Of the electrodes, the minimum area required for bonding was defined as a P-bonding electrode, and the remaining area was defined as a P-transparent electrode to ensure an appropriate light-emitting area. Further, the P transparent electrode was provided adjacent to only one side of the P bonding electrode, and was arranged so as not to obstruct the light emission immediately below the P bonding electrode.
• the area of the p-bonding electrode is minimized and the three directions are the side surfaces of the device, so that light emission immediately below the p-bonding electrode can be efficiently performed. It can be taken out to the outside, and the luminous efficiency of the device is improved compared to the conventional one.
• light emitting devices having different light emitting areas can be obtained from one substrate only by changing a part of the manufacturing process.
• FIGS. 5A and 5B show the green light-emitting device of this embodiment.
• This light-emitting element is substantially the same as Example 1 except that the light-emitting element is formed about 3 mm from the side of the p-bonding electrode 107 element.
• the thickness of the sapphire substrate 101 was 100 m
• the size of the p transparent electrode 106 was a rectangular shape of 100 ⁇ 200 m
• the size of the p bonding electrode 107 was a square shape of 100 ⁇ 100 m on a side.
• the light emission immediately below the p-bonding electrode 107 can be efficiently extracted from the side surface of the element as in the first embodiment.
• a light-emitting element that emits light in the visible region with higher luminous efficiency than the conventional one was obtained.
• FIGS. 6A and 6B show the yellow-green light emitting device of this example.
• This light emitting device is substantially the same as Example 1 except that the p transparent electrode was omitted.
• the thickness of the sapphire substrate 101 was set to 200 mm, and the size of the bonding electrode 107 was set to a square shape of 150 m on each side.
• the light-emitting area is small, which causes a problem of deterioration of characteristics such as a decrease in luminous efficiency at a high current. Since it can be used at a low current, it can be used satisfactorily even in the simple form shown in Figs. 6 (a) and (b). Accordingly, also in this light emitting device, light emission immediately below the p-bonding electrode 107 is effectively extracted from the side surface of the device, so that a light emitting device having sufficient characteristics particularly for low output operation was obtained. According to the light emitting device of the present invention, The light emitted immediately below the second electrode can be extracted to the maximum from the side of the device, and the light extraction efficiency can be improved. Further, by arranging the respective semiconductor layers and the electrodes of the light emitting element of the present invention in an appropriate shape, it becomes possible to manufacture the light emitting element simply and easily.

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• 1997
  • 1997-03-31 JP JP07930097A patent/JP4203132B2/ja not_active Expired - Lifetime
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