TW392194B - Light emitting element and its manufacturing method - Google Patents
Light emitting element and its manufacturing method Download PDFInfo
- Publication number
- TW392194B TW392194B TW087104416A TW87104416A TW392194B TW 392194 B TW392194 B TW 392194B TW 087104416 A TW087104416 A TW 087104416A TW 87104416 A TW87104416 A TW 87104416A TW 392194 B TW392194 B TW 392194B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- semiconductor layer
- light
- emitting element
- overlapping
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims description 23
- 150000004767 nitrides Chemical class 0.000 claims description 5
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 82
- 239000010408 film Substances 0.000 description 21
- 229910002601 GaN Inorganic materials 0.000 description 18
- 239000000463 material Substances 0.000 description 11
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 5
- 230000002079 cooperative effect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 235000015170 shellfish Nutrition 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- -1 Sn〇2 Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000011869 dried fruits Nutrition 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07930097A JP4203132B2 (ja) | 1997-03-31 | 1997-03-31 | 発光素子及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW392194B true TW392194B (en) | 2000-06-01 |
Family
ID=13686004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087104416A TW392194B (en) | 1997-03-31 | 1998-03-24 | Light emitting element and its manufacturing method |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6583442B2 (enExample) |
| JP (1) | JP4203132B2 (enExample) |
| KR (1) | KR20010005846A (enExample) |
| CN (1) | CN100346487C (enExample) |
| TW (1) | TW392194B (enExample) |
| WO (1) | WO1998044569A1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413839B1 (en) * | 1998-10-23 | 2002-07-02 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
| JP3285341B2 (ja) | 2000-06-01 | 2002-05-27 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
| JP3466144B2 (ja) | 2000-09-22 | 2003-11-10 | 士郎 酒井 | 半導体の表面を荒くする方法 |
| JP2002164570A (ja) * | 2000-11-24 | 2002-06-07 | Shiro Sakai | 窒化ガリウム系化合物半導体装置 |
| JP3548735B2 (ja) | 2001-06-29 | 2004-07-28 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
| JP2003110139A (ja) * | 2001-09-28 | 2003-04-11 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子 |
| US20030132433A1 (en) * | 2002-01-15 | 2003-07-17 | Piner Edwin L. | Semiconductor structures including a gallium nitride material component and a silicon germanium component |
| TW543169B (en) * | 2002-02-08 | 2003-07-21 | Ritdisplay Corp | Package structure and process of organic light-emitting diode panel |
| US7005685B2 (en) | 2002-02-28 | 2006-02-28 | Shiro Sakai | Gallium-nitride-based compound semiconductor device |
| KR100497127B1 (ko) * | 2002-09-05 | 2005-06-28 | 삼성전기주식회사 | 질화갈륨계 반도체 엘이디 소자 |
| KR100543696B1 (ko) * | 2002-09-09 | 2006-01-20 | 삼성전기주식회사 | 고효율 발광 다이오드 |
| JP4635985B2 (ja) * | 2002-10-03 | 2011-02-23 | 日亜化学工業株式会社 | 発光ダイオード |
| TW569409B (en) * | 2002-10-22 | 2004-01-01 | Ritek Display Technology Corp | Process for packaging an OLED panel |
| WO2004047189A1 (en) * | 2002-11-16 | 2004-06-03 | Lg Innotek Co.,Ltd | Light emitting device and fabrication method thereof |
| US20050051781A1 (en) * | 2003-09-08 | 2005-03-10 | United Epitaxy Company, Ltd. | Light emitting diode and method of making the same |
| JP2005259891A (ja) * | 2004-03-10 | 2005-09-22 | Toyoda Gosei Co Ltd | 発光装置 |
| EP2750194A1 (en) | 2005-06-22 | 2014-07-02 | Seoul Viosys Co., Ltd. | Light emitting device comprising a plurality of light emitting diode cells |
| KR100661614B1 (ko) | 2005-10-07 | 2006-12-26 | 삼성전기주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
| JP5326225B2 (ja) * | 2006-05-29 | 2013-10-30 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| JP5250856B2 (ja) | 2006-06-13 | 2013-07-31 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子の製造方法 |
| WO2008073400A1 (en) | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Transparent light emitting diodes |
| KR20100047219A (ko) * | 2007-06-15 | 2010-05-07 | 로무 가부시키가이샤 | 반도체 발광 소자 |
| EP2174351A1 (en) * | 2007-07-26 | 2010-04-14 | The Regents of the University of California | Light emitting diodes with a p-type surface |
| USD579019S1 (en) * | 2007-08-27 | 2008-10-21 | Podium Photonics (Guangzhou) Ltd. | Chip |
| USD578536S1 (en) * | 2007-08-27 | 2008-10-14 | Podium Photonics (Guangzhou) Ltd. | Chip |
| US8698188B2 (en) * | 2010-03-08 | 2014-04-15 | Nichia Corporation | Semiconductor light emitting device and method for producing the same |
| US8785952B2 (en) * | 2011-10-10 | 2014-07-22 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package including the same |
| KR102546307B1 (ko) * | 2015-12-02 | 2023-06-21 | 삼성전자주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
| WO2018164371A1 (ko) * | 2017-03-08 | 2018-09-13 | 엘지이노텍 주식회사 | 반도체 소자 및 반도체 소자 패키지 |
| CN108039126B (zh) * | 2017-12-07 | 2021-04-23 | 大连海事大学 | 一种led阵列走线方法及显示屏系统 |
| JP6803595B1 (ja) * | 2020-09-16 | 2020-12-23 | アルディーテック株式会社 | 半導体発光素子チップ集積装置およびその製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0952617B1 (en) * | 1993-04-28 | 2004-07-28 | Nichia Corporation | Gallium nitride-based III-V group compound semiconductor device |
| JPH07254732A (ja) * | 1994-03-15 | 1995-10-03 | Toshiba Corp | 半導体発光装置 |
| JPH07288340A (ja) * | 1994-04-19 | 1995-10-31 | Mitsubishi Cable Ind Ltd | 発光素子およびその製造方法 |
| DE69533511T2 (de) * | 1994-07-21 | 2005-09-15 | Matsushita Electric Industrial Co., Ltd., Kadoma | Lichtemittierende halbleitervorrichtung und herstellungsverfahren |
| JP3318698B2 (ja) * | 1994-09-30 | 2002-08-26 | ローム株式会社 | 半導体発光素子 |
| JP3841460B2 (ja) * | 1995-03-13 | 2006-11-01 | 豊田合成株式会社 | 半導体光素子 |
| JPH0964418A (ja) * | 1995-08-22 | 1997-03-07 | Fujitsu Ltd | 発光素子及びその製造方法 |
| JPH0964477A (ja) | 1995-08-25 | 1997-03-07 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| EP0852817A1 (en) * | 1995-09-25 | 1998-07-15 | Nippon Sheet Glass Co., Ltd. | Surface light-emitting element and self-scanning type light-emitting device |
| US6107644A (en) * | 1997-01-24 | 2000-08-22 | Rohm Co., Ltd. | Semiconductor light emitting device |
-
1997
- 1997-03-31 JP JP07930097A patent/JP4203132B2/ja not_active Expired - Lifetime
-
1998
- 1998-03-24 TW TW087104416A patent/TW392194B/zh not_active IP Right Cessation
- 1998-03-25 US US09/402,493 patent/US6583442B2/en not_active Expired - Lifetime
- 1998-03-25 KR KR1019997008920A patent/KR20010005846A/ko not_active Ceased
- 1998-03-25 CN CNB988037610A patent/CN100346487C/zh not_active Expired - Lifetime
- 1998-03-25 WO PCT/JP1998/001355 patent/WO1998044569A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN1251688A (zh) | 2000-04-26 |
| CN100346487C (zh) | 2007-10-31 |
| KR20010005846A (ko) | 2001-01-15 |
| US6583442B2 (en) | 2003-06-24 |
| US20020121637A1 (en) | 2002-09-05 |
| JP4203132B2 (ja) | 2008-12-24 |
| WO1998044569A1 (fr) | 1998-10-08 |
| JPH10275942A (ja) | 1998-10-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |