JP4202931B2 - ニッケル−リン合金に使用するｃｍｐ組成物 - Google Patents
ニッケル−リン合金に使用するｃｍｐ組成物 Download PDFInfo
- Publication number
- JP4202931B2 JP4202931B2 JP2003571364A JP2003571364A JP4202931B2 JP 4202931 B2 JP4202931 B2 JP 4202931B2 JP 2003571364 A JP2003571364 A JP 2003571364A JP 2003571364 A JP2003571364 A JP 2003571364A JP 4202931 B2 JP4202931 B2 JP 4202931B2
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- JP
- Japan
- Prior art keywords
- composition
- acid
- weight
- group
- cmp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title claims description 59
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 title description 9
- 229910001096 P alloy Inorganic materials 0.000 title description 5
- 238000000034 method Methods 0.000 claims description 39
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 30
- 239000002002 slurry Substances 0.000 claims description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 18
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 16
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 15
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 9
- 239000004471 Glycine Substances 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 239000000908 ammonium hydroxide Substances 0.000 claims description 9
- YSMRWXYRXBRSND-UHFFFAOYSA-N TOTP Chemical compound CC1=CC=CC=C1OP(=O)(OC=1C(=CC=CC=1)C)OC1=CC=CC=C1C YSMRWXYRXBRSND-UHFFFAOYSA-N 0.000 claims description 8
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 8
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 8
- 150000003863 ammonium salts Chemical class 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 5
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 5
- 235000006408 oxalic acid Nutrition 0.000 claims description 5
- 239000011975 tartaric acid Substances 0.000 claims description 5
- 235000002906 tartaric acid Nutrition 0.000 claims description 5
- 150000007513 acids Chemical class 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000004310 lactic acid Substances 0.000 claims description 4
- 235000014655 lactic acid Nutrition 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical group OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 3
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 claims description 3
- 208000035220 Dyserythropoietic Congenital Anemia Diseases 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 235000015165 citric acid Nutrition 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 3
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims 4
- 230000003993 interaction Effects 0.000 description 11
- 239000007800 oxidant agent Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 239000008119 colloidal silica Substances 0.000 description 4
- 238000007619 statistical method Methods 0.000 description 4
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 3
- 229910019142 PO4 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 235000021317 phosphate Nutrition 0.000 description 3
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- BRARRAHGNDUELT-UHFFFAOYSA-N 3-hydroxypicolinic acid Chemical compound OC(=O)C1=NC=CC=C1O BRARRAHGNDUELT-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- GJCITMCOKXFKJM-UHFFFAOYSA-N [N+](=O)([O-])[O-].[Al+3].NCC(=O)O.[N+](=O)([O-])[O-].[N+](=O)([O-])[O-] Chemical compound [N+](=O)([O-])[O-].[Al+3].NCC(=O)O.[N+](=O)([O-])[O-].[N+](=O)([O-])[O-] GJCITMCOKXFKJM-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- HLXVERDKKMHKLD-UHFFFAOYSA-N formylazanium;acetate Chemical compound NC=O.CC(O)=O HLXVERDKKMHKLD-UHFFFAOYSA-N 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 description 1
- YBHYYFYQHRADCQ-UHFFFAOYSA-N 2-aminoacetic acid;2-hydroxypropane-1,2,3-tricarboxylic acid Chemical compound NCC(O)=O.OC(=O)CC(O)(C(O)=O)CC(O)=O YBHYYFYQHRADCQ-UHFFFAOYSA-N 0.000 description 1
- YBPUBXQZBUQACE-UHFFFAOYSA-N 2-aminoacetic acid;phosphoric acid Chemical compound NCC(O)=O.OP(O)(O)=O YBPUBXQZBUQACE-UHFFFAOYSA-N 0.000 description 1
- FZIPCQLKPTZZIM-UHFFFAOYSA-N 2-oxidanylpropane-1,2,3-tricarboxylic acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O.OC(=O)CC(O)(C(O)=O)CC(O)=O FZIPCQLKPTZZIM-UHFFFAOYSA-N 0.000 description 1
- PVBVLSRHPABDLE-UHFFFAOYSA-N 2-phosphonoethaneperoxoic acid Chemical compound OOC(=O)CP(O)(O)=O PVBVLSRHPABDLE-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- JWRAJPOOZFULFB-UHFFFAOYSA-N P(O)(O)(O)=O.[N+](=O)([O-])[O-].[Al+3].[N+](=O)([O-])[O-].[N+](=O)([O-])[O-] Chemical compound P(O)(O)(O)=O.[N+](=O)([O-])[O-].[Al+3].[N+](=O)([O-])[O-].[N+](=O)([O-])[O-] JWRAJPOOZFULFB-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- CTBLNDWJRQNJGE-UHFFFAOYSA-N [N+](=O)([O-])[O-].[Al+3].C(C(O)C(O)C(=O)O)(=O)O.[N+](=O)([O-])[O-].[N+](=O)([O-])[O-] Chemical compound [N+](=O)([O-])[O-].[Al+3].C(C(O)C(O)C(=O)O)(=O)O.[N+](=O)([O-])[O-].[N+](=O)([O-])[O-] CTBLNDWJRQNJGE-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OHJMTUPIZMNBFR-UHFFFAOYSA-N biuret Chemical compound NC(=O)NC(N)=O OHJMTUPIZMNBFR-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- ZSFDBVJMDCMTBM-UHFFFAOYSA-N ethane-1,2-diamine;phosphoric acid Chemical compound NCCN.OP(O)(O)=O ZSFDBVJMDCMTBM-UHFFFAOYSA-N 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- AQSJGOWTSHOLKH-UHFFFAOYSA-N phosphite(3-) Chemical class [O-]P([O-])[O-] AQSJGOWTSHOLKH-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- BFDWBSRJQZPEEB-UHFFFAOYSA-L sodium fluorophosphate Chemical compound [Na+].[Na+].[O-]P([O-])(F)=O BFDWBSRJQZPEEB-UHFFFAOYSA-L 0.000 description 1
- 239000007962 solid dispersion Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Detergent Compositions (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/080,853 US6755721B2 (en) | 2002-02-22 | 2002-02-22 | Chemical mechanical polishing of nickel phosphorous alloys |
| PCT/US2003/004935 WO2003072671A1 (en) | 2002-02-22 | 2003-02-18 | Cmp formulations for the use on nickel-phosphorus alloys |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005518473A JP2005518473A (ja) | 2005-06-23 |
| JP2005518473A5 JP2005518473A5 (https=) | 2005-12-22 |
| JP4202931B2 true JP4202931B2 (ja) | 2008-12-24 |
Family
ID=27765245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003571364A Expired - Fee Related JP4202931B2 (ja) | 2002-02-22 | 2003-02-18 | ニッケル−リン合金に使用するｃｍｐ組成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US6755721B2 (https=) |
| EP (1) | EP1476518A1 (https=) |
| JP (1) | JP4202931B2 (https=) |
| CN (1) | CN1284838C (https=) |
| AU (1) | AU2003217577A1 (https=) |
| WO (1) | WO2003072671A1 (https=) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040092103A1 (en) * | 2000-07-19 | 2004-05-13 | Shigeo Fujii | Polishing fluid composition |
| US6755721B2 (en) * | 2002-02-22 | 2004-06-29 | Saint-Gobain Ceramics And Plastics, Inc. | Chemical mechanical polishing of nickel phosphorous alloys |
| US7553345B2 (en) | 2002-12-26 | 2009-06-30 | Kao Corporation | Polishing composition |
| US8025808B2 (en) * | 2003-04-25 | 2011-09-27 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machine ceramics |
| US7306748B2 (en) * | 2003-04-25 | 2007-12-11 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machining ceramics |
| JP4202201B2 (ja) * | 2003-07-03 | 2008-12-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP4707311B2 (ja) * | 2003-08-08 | 2011-06-22 | 花王株式会社 | 磁気ディスク用基板 |
| JP4336550B2 (ja) * | 2003-09-09 | 2009-09-30 | 花王株式会社 | 磁気ディスク用研磨液キット |
| US6964600B2 (en) | 2003-11-21 | 2005-11-15 | Praxair Technology, Inc. | High selectivity colloidal silica slurry |
| TWI364450B (en) * | 2004-08-09 | 2012-05-21 | Kao Corp | Polishing composition |
| JP4836441B2 (ja) * | 2004-11-30 | 2011-12-14 | 花王株式会社 | 研磨液組成物 |
| US7241692B2 (en) * | 2005-07-26 | 2007-07-10 | Semiconductor Manufacturing International (Shanghai) Corporation | Method and structure for aluminum chemical mechanical polishing and protective layer |
| US7316977B2 (en) * | 2005-08-24 | 2008-01-08 | Air Products And Chemicals, Inc. | Chemical-mechanical planarization composition having ketooxime compounds and associated method for use |
| US8353740B2 (en) * | 2005-09-09 | 2013-01-15 | Saint-Gobain Ceramics & Plastics, Inc. | Conductive hydrocarbon fluid |
| US7708904B2 (en) * | 2005-09-09 | 2010-05-04 | Saint-Gobain Ceramics & Plastics, Inc. | Conductive hydrocarbon fluid |
| US7435162B2 (en) * | 2005-10-24 | 2008-10-14 | 3M Innovative Properties Company | Polishing fluids and methods for CMP |
| CN1955249B (zh) * | 2005-10-28 | 2012-07-25 | 安集微电子（上海）有限公司 | 用于钽阻挡层的化学机械抛光浆料 |
| US20070209287A1 (en) * | 2006-03-13 | 2007-09-13 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
| PL1903081T3 (pl) * | 2006-09-19 | 2015-05-29 | Poligrat Gmbh | Stabilizator do kwaśnych kąpieli polerskich zawierających metal |
| TWI386468B (zh) * | 2006-12-20 | 2013-02-21 | Saint Gobain Ceramics | 加工無機非金屬工件之方法 |
| US8083820B2 (en) * | 2006-12-22 | 2011-12-27 | 3M Innovative Properties Company | Structured fixed abrasive articles including surface treated nano-ceria filler, and method for making and using the same |
| US7497885B2 (en) * | 2006-12-22 | 2009-03-03 | 3M Innovative Properties Company | Abrasive articles with nanoparticulate fillers and method for making and using them |
| CN101358125B (zh) * | 2007-08-03 | 2013-07-10 | 安集微电子（上海）有限公司 | 一种浓缩化学机械平坦化浆料产品及其使用方法 |
| US8226841B2 (en) | 2009-02-03 | 2012-07-24 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous memory disks |
| JP4949432B2 (ja) * | 2009-05-15 | 2012-06-06 | 花王株式会社 | ハードディスク用基板の製造方法 |
| US20100288301A1 (en) * | 2009-05-15 | 2010-11-18 | Hui Hwang Kee | Removing contaminants from an electroless nickel plated surface |
| WO2011054193A1 (zh) * | 2009-11-06 | 2011-05-12 | Wang Chen | 一种化学机械抛光液 |
| CN102911605A (zh) * | 2011-08-05 | 2013-02-06 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN102660198B (zh) * | 2012-04-11 | 2013-10-16 | 南京航空航天大学 | 软脆易潮解晶体化学机械抛光用无水无磨料抛光液 |
| US8778212B2 (en) * | 2012-05-22 | 2014-07-15 | Cabot Microelectronics Corporation | CMP composition containing zirconia particles and method of use |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| WO2015057433A1 (en) | 2013-10-18 | 2015-04-23 | Cabot Microelectronics Corporation | Polishing composition and method for nickel-phosphorous coated memory disks |
| US9401104B2 (en) | 2014-05-05 | 2016-07-26 | Cabot Microelectronics Corporation | Polishing composition for edge roll-off improvement |
| TWI561620B (en) * | 2014-06-20 | 2016-12-11 | Cabot Microelectronics Corp | Cmp slurry compositions and methods for aluminum polishing |
| MY186924A (en) | 2015-04-06 | 2021-08-26 | Cmc Mat Inc | Cmp composition and methods for polishing rigid disks |
| KR102238349B1 (ko) * | 2016-05-03 | 2021-04-09 | 엘지전자 주식회사 | 리니어 압축기 |
| CN105839111A (zh) * | 2016-05-05 | 2016-08-10 | 西安热工研究院有限公司 | 一种制备ebsd样品的机械抛光液、制备方法及机械抛光方法 |
| US10968377B2 (en) | 2017-04-14 | 2021-04-06 | Cmc Materials, Inc. | Chemical-mechanical processing slurry and methods for processing a nickel substrate surface |
| CN107267993B (zh) * | 2017-05-25 | 2020-06-23 | 广西大学 | 双氧水体系抛光液以及在该双氧水体系抛光液中抛光thgem膜的方法 |
| CN109848821A (zh) * | 2018-12-28 | 2019-06-07 | 大连理工大学 | 一种镍合金的绿色环保化学机械抛光方法 |
| MY201421A (en) | 2019-01-11 | 2024-02-21 | Cmc Mat Llc | Dual additive composition for polishing memory hard disks exhibiting edge roll off |
| CN110183971A (zh) * | 2019-06-28 | 2019-08-30 | 大连理工大学 | 一种整体叶轮的绿色环保混合化学机械抛光液与抛光方法 |
| TWI861353B (zh) * | 2020-01-31 | 2024-11-11 | 美商恩特葛瑞斯股份有限公司 | 用於研磨硬質材料之化學機械研磨(cmp)組合物 |
| JP7457586B2 (ja) * | 2020-06-18 | 2024-03-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物の濃縮液およびこれを用いた研磨方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4786564A (en) | 1987-02-25 | 1988-11-22 | Komag, Inc. | Method for manufacturing a magnetic disk having reduced bit shift, minimized noise, increased resolution and uniform magnetic characteristics, and the resulting disk |
| US5437887A (en) | 1993-12-22 | 1995-08-01 | Enthone-Omi, Inc. | Method of preparing aluminum memory disks |
| AU6537000A (en) | 1999-08-13 | 2001-03-13 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
| JP4273475B2 (ja) * | 1999-09-21 | 2009-06-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US6293848B1 (en) * | 1999-11-15 | 2001-09-25 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| US6527817B1 (en) | 1999-11-15 | 2003-03-04 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| US6471884B1 (en) * | 2000-04-04 | 2002-10-29 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with an amino acid-containing composition |
| US6569215B2 (en) * | 2000-04-17 | 2003-05-27 | Showa Denko Kabushiki Kaisha | Composition for polishing magnetic disk substrate |
| US6461227B1 (en) * | 2000-10-17 | 2002-10-08 | Cabot Microelectronics Corporation | Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition |
| US6805812B2 (en) | 2001-10-11 | 2004-10-19 | Cabot Microelectronics Corporation | Phosphono compound-containing polishing composition and method of using same |
| US6755721B2 (en) * | 2002-02-22 | 2004-06-29 | Saint-Gobain Ceramics And Plastics, Inc. | Chemical mechanical polishing of nickel phosphorous alloys |
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2003
- 2003-02-18 EP EP03713530A patent/EP1476518A1/en not_active Withdrawn
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- 2003-02-18 CN CN03804461.7A patent/CN1284838C/zh not_active Expired - Fee Related
- 2003-02-18 AU AU2003217577A patent/AU2003217577A1/en not_active Abandoned
- 2003-02-18 JP JP2003571364A patent/JP4202931B2/ja not_active Expired - Fee Related
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| CN1639288A (zh) | 2005-07-13 |
| AU2003217577A1 (en) | 2003-09-09 |
| EP1476518A1 (en) | 2004-11-17 |
| CN1284838C (zh) | 2006-11-15 |
| JP2005518473A (ja) | 2005-06-23 |
| WO2003072671A1 (en) | 2003-09-04 |
| US20030171072A1 (en) | 2003-09-11 |
| US6755721B2 (en) | 2004-06-29 |
| US6945851B2 (en) | 2005-09-20 |
| US20050020187A1 (en) | 2005-01-27 |
| US20050279030A1 (en) | 2005-12-22 |
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