JP4156946B2 - 加速度センサ - Google Patents

加速度センサ Download PDF

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Publication number
JP4156946B2
JP4156946B2 JP2003048444A JP2003048444A JP4156946B2 JP 4156946 B2 JP4156946 B2 JP 4156946B2 JP 2003048444 A JP2003048444 A JP 2003048444A JP 2003048444 A JP2003048444 A JP 2003048444A JP 4156946 B2 JP4156946 B2 JP 4156946B2
Authority
JP
Japan
Prior art keywords
cap
semiconductor chip
acceleration sensor
chip substrate
acceleration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003048444A
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English (en)
Japanese (ja)
Other versions
JP2004257841A (ja
JP2004257841A5 (https=
Inventor
輝明 長原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2003048444A priority Critical patent/JP4156946B2/ja
Priority to US10/654,002 priority patent/US6892577B2/en
Priority to DE10351608A priority patent/DE10351608B4/de
Publication of JP2004257841A publication Critical patent/JP2004257841A/ja
Publication of JP2004257841A5 publication Critical patent/JP2004257841A5/ja
Application granted granted Critical
Publication of JP4156946B2 publication Critical patent/JP4156946B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0051—Packages or encapsulation for reducing stress inside of the package structure between the package lid and the substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
JP2003048444A 2003-02-26 2003-02-26 加速度センサ Expired - Fee Related JP4156946B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003048444A JP4156946B2 (ja) 2003-02-26 2003-02-26 加速度センサ
US10/654,002 US6892577B2 (en) 2003-02-26 2003-09-04 Acceleration sensor formed on surface of semiconductor substrate
DE10351608A DE10351608B4 (de) 2003-02-26 2003-11-03 Beschleunigungssensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003048444A JP4156946B2 (ja) 2003-02-26 2003-02-26 加速度センサ

Publications (3)

Publication Number Publication Date
JP2004257841A JP2004257841A (ja) 2004-09-16
JP2004257841A5 JP2004257841A5 (https=) 2005-11-04
JP4156946B2 true JP4156946B2 (ja) 2008-09-24

Family

ID=32866599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003048444A Expired - Fee Related JP4156946B2 (ja) 2003-02-26 2003-02-26 加速度センサ

Country Status (3)

Country Link
US (1) US6892577B2 (https=)
JP (1) JP4156946B2 (https=)
DE (1) DE10351608B4 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016522896A (ja) * 2013-05-02 2016-08-04 ノースロップ グルマン リテフ ゲーエムベーハーＮｏｒｔｈｒｏｐ Ｇｒｕｍｍａｎ ＬＩＴＥＦ ＧｍｂＨ 加速度センサ及び加速度センサの製造方法

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US7158008B2 (en) * 2002-03-29 2007-01-02 Datakey Electronincs, Inc. Electronic key system and method
TW593127B (en) 2003-08-18 2004-06-21 Prime View Int Co Ltd Interference display plate and manufacturing method thereof
JP2005077349A (ja) * 2003-09-03 2005-03-24 Mitsubishi Electric Corp 加速度センサ
US8124434B2 (en) 2004-09-27 2012-02-28 Qualcomm Mems Technologies, Inc. Method and system for packaging a display
US7184202B2 (en) 2004-09-27 2007-02-27 Idc, Llc Method and system for packaging a MEMS device
US7701631B2 (en) 2004-09-27 2010-04-20 Qualcomm Mems Technologies, Inc. Device having patterned spacers for backplates and method of making the same
US7405924B2 (en) 2004-09-27 2008-07-29 Idc, Llc System and method for protecting microelectromechanical systems array using structurally reinforced back-plate
US7668415B2 (en) 2004-09-27 2010-02-23 Qualcomm Mems Technologies, Inc. Method and device for providing electronic circuitry on a backplate
US7446926B2 (en) 2004-09-27 2008-11-04 Idc, Llc System and method of providing a regenerating protective coating in a MEMS device
US7573547B2 (en) 2004-09-27 2009-08-11 Idc, Llc System and method for protecting micro-structure of display array using spacers in gap within display device
US7368803B2 (en) * 2004-09-27 2008-05-06 Idc, Llc System and method for protecting microelectromechanical systems array using back-plate with non-flat portion
US7424198B2 (en) 2004-09-27 2008-09-09 Idc, Llc Method and device for packaging a substrate
US7098065B2 (en) * 2004-09-28 2006-08-29 Stmicroelectronics, Inc. Integrated lid formed on MEMS device
US7461559B2 (en) * 2005-03-18 2008-12-09 Citizen Holdings Co., Ltd. Electromechanical transducer and method of fabricating the same
WO2007020701A1 (ja) * 2005-08-18 2007-02-22 C & N Inc 加速度センサ装置
WO2007120887A2 (en) 2006-04-13 2007-10-25 Qualcomm Mems Technologies, Inc Packaging a mems device using a frame
DE102007057441B4 (de) * 2007-11-29 2019-07-11 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements mit einem volumenelastischen Medium und mikromechanischen Bauelement
JP4650843B2 (ja) * 2007-12-28 2011-03-16 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP5121765B2 (ja) * 2009-03-25 2013-01-16 株式会社東芝 Ｍｅｍｓデバイスおよびその製造方法
US8379392B2 (en) 2009-10-23 2013-02-19 Qualcomm Mems Technologies, Inc. Light-based sealing and device packaging
JP5445065B2 (ja) 2009-11-25 2014-03-19 セイコーエプソン株式会社 剪断力検出素子、触覚センサー、および把持装置
JP5463173B2 (ja) * 2010-03-12 2014-04-09 日立オートモティブシステムズ株式会社 角速度検出装置
JP5771916B2 (ja) * 2010-08-03 2015-09-02 大日本印刷株式会社 Ｍｅｍｓデバイス及びその製造方法
KR101289101B1 (ko) * 2010-11-18 2013-07-23 삼성전기주식회사 관성센서
JP2013002938A (ja) * 2011-06-16 2013-01-07 Seiko Epson Corp センサーデバイス、およびその製造方法
JP6020793B2 (ja) * 2012-04-02 2016-11-02 セイコーエプソン株式会社 物理量センサーおよび電子機器
JP2014134481A (ja) * 2013-01-11 2014-07-24 Seiko Epson Corp 物理量センサー、電子機器、及び移動体
JP6206651B2 (ja) 2013-07-17 2017-10-04 セイコーエプソン株式会社 機能素子、電子機器、および移動体
JP2016042074A (ja) 2014-08-13 2016-03-31 セイコーエプソン株式会社 物理量センサー、電子機器および移動体
JP2016161472A (ja) * 2015-03-04 2016-09-05 セイコーエプソン株式会社 物理量センサーおよびその製造方法、電子機器、ならびに移動体
CN106563930B (zh) * 2016-08-31 2018-12-04 江苏龙城精锻有限公司 一种通过预制裂纹提高模具寿命的工艺方法
TWI808761B (zh) * 2022-05-17 2023-07-11 力成科技股份有限公司 感測裝置的封裝結構

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JP2508928B2 (ja) * 1991-03-11 1996-06-19 日本電装株式会社 半導体加速度センサの製造方法
EP0547742B1 (en) * 1991-12-19 1995-12-13 Motorola, Inc. Triaxial accelerometer
JP3382030B2 (ja) 1994-10-14 2003-03-04 株式会社日立製作所 フルモールド実装型加速度センサ
US6323550B1 (en) * 1995-06-06 2001-11-27 Analog Devices, Inc. Package for sealing an integrated circuit die
JPH102911A (ja) 1996-06-14 1998-01-06 Hitachi Ltd 容量式センサ及びそれを用いたシステム
JP3278363B2 (ja) * 1996-11-18 2002-04-30 三菱電機株式会社 半導体加速度センサ
JP3962499B2 (ja) 1999-01-27 2007-08-22 三菱電機株式会社 半導体加速度センサ及びその製造方法
JP3578028B2 (ja) 1999-12-22 2004-10-20 松下電工株式会社 加速度センサの製造方法
JP2001235485A (ja) 2000-02-25 2001-08-31 Mitsubishi Electric Corp 加速度センサ
JP2001337105A (ja) 2000-05-26 2001-12-07 Matsushita Electric Works Ltd 半導体加速度センサ
DE10053309B4 (de) * 2000-10-27 2005-02-24 Eads Deutschland Gmbh Mikromechanischer Beschleunigungssensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016522896A (ja) * 2013-05-02 2016-08-04 ノースロップ グルマン リテフ ゲーエムベーハーＮｏｒｔｈｒｏｐ Ｇｒｕｍｍａｎ ＬＩＴＥＦ ＧｍｂＨ 加速度センサ及び加速度センサの製造方法

Also Published As

Publication number Publication date
DE10351608A1 (de) 2004-09-16
US6892577B2 (en) 2005-05-17
DE10351608B4 (de) 2008-07-10
JP2004257841A (ja) 2004-09-16
US20040163472A1 (en) 2004-08-26

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