JP4154006B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4154006B2
JP4154006B2 JP14231097A JP14231097A JP4154006B2 JP 4154006 B2 JP4154006 B2 JP 4154006B2 JP 14231097 A JP14231097 A JP 14231097A JP 14231097 A JP14231097 A JP 14231097A JP 4154006 B2 JP4154006 B2 JP 4154006B2
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JP
Japan
Prior art keywords
bit line
data
sense amplifier
circuit
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP14231097A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10241368A (ja
JPH10241368A5 (enExample
Inventor
義博 竹前
眞男 田口
正夫 中野
裕彦 望月
浩由 富田
康郎 松崎
忠雄 相川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14231097A priority Critical patent/JP4154006B2/ja
Priority to GB9718939A priority patent/GB2320778B/en
Priority to GB0104983A priority patent/GB2356952B/en
Priority to US08/924,315 priority patent/US6154405A/en
Priority to TW086113384A priority patent/TW344896B/zh
Priority to KR1019970048122A priority patent/KR100286500B1/ko
Priority to DE19750884A priority patent/DE19750884B4/de
Publication of JPH10241368A publication Critical patent/JPH10241368A/ja
Publication of JPH10241368A5 publication Critical patent/JPH10241368A5/ja
Application granted granted Critical
Publication of JP4154006B2 publication Critical patent/JP4154006B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
JP14231097A 1996-12-25 1997-05-30 半導体記憶装置 Expired - Lifetime JP4154006B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP14231097A JP4154006B2 (ja) 1996-12-25 1997-05-30 半導体記憶装置
GB0104983A GB2356952B (en) 1996-12-25 1997-09-05 Semiconductor memory device
US08/924,315 US6154405A (en) 1996-12-25 1997-09-05 Semiconductor memory device having a dummy cell resetting the bit lines to a reset potential that is based on data read in a previous read data
GB9718939A GB2320778B (en) 1996-12-25 1997-09-05 Semiconductor memory device
TW086113384A TW344896B (en) 1996-12-25 1997-09-15 Semiconductor memory device
KR1019970048122A KR100286500B1 (ko) 1996-12-25 1997-09-23 반도체기억장치
DE19750884A DE19750884B4 (de) 1996-12-25 1997-11-18 Halbleiterspeichervorrichtung

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP34603296 1996-12-25
JP8-346032 1996-12-25
JP14231097A JP4154006B2 (ja) 1996-12-25 1997-05-30 半導体記憶装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2007262337A Division JP5012388B2 (ja) 1996-12-25 2007-10-05 半導体記憶装置
JP2007262338A Division JP5003396B2 (ja) 1996-12-25 2007-10-05 半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH10241368A JPH10241368A (ja) 1998-09-11
JPH10241368A5 JPH10241368A5 (enExample) 2004-12-02
JP4154006B2 true JP4154006B2 (ja) 2008-09-24

Family

ID=26474362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14231097A Expired - Lifetime JP4154006B2 (ja) 1996-12-25 1997-05-30 半導体記憶装置

Country Status (6)

Country Link
US (1) US6154405A (enExample)
JP (1) JP4154006B2 (enExample)
KR (1) KR100286500B1 (enExample)
DE (1) DE19750884B4 (enExample)
GB (1) GB2320778B (enExample)
TW (1) TW344896B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6016390A (en) * 1998-01-29 2000-01-18 Artisan Components, Inc. Method and apparatus for eliminating bitline voltage offsets in memory devices
KR100732287B1 (ko) * 1999-04-08 2007-06-25 주식회사 하이닉스반도체 패킷 명령어 구동형 반도체 메모리 장치
JP5034133B2 (ja) * 2000-02-29 2012-09-26 富士通セミコンダクター株式会社 半導体記憶装置
US7007187B1 (en) * 2000-06-30 2006-02-28 Intel Corporation Method and apparatus for an integrated circuit having flexible-ratio frequency domain cross-overs
JP2002063788A (ja) * 2000-08-21 2002-02-28 Fujitsu Ltd 半導体記憶装置
KR100403612B1 (ko) * 2000-11-08 2003-11-01 삼성전자주식회사 비트라인 프리차아지 시간(ｔＲＰ)을 개선하는 메모리 셀어레이 구조를 갖는 반도체 메모리 장치 및 그 개선 방법
JP4329919B2 (ja) * 2001-03-13 2009-09-09 Ｏｋｉセミコンダクタ株式会社 半導体メモリおよび半導体メモリの駆動方法
KR100600056B1 (ko) * 2004-10-30 2006-07-13 주식회사 하이닉스반도체 저 전압용 반도체 메모리 장치
JP4964225B2 (ja) * 2006-03-01 2012-06-27 ルネサスエレクトロニクス株式会社 半導体記憶装置
US20090296514A1 (en) * 2008-05-29 2009-12-03 Chih-Hui Yeh Method for accessing a memory chip
JP2011023079A (ja) * 2009-07-17 2011-02-03 Renesas Electronics Corp 半導体装置及びデータの読み出し方法
KR20140028542A (ko) * 2012-08-29 2014-03-10 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
WO2015170220A1 (en) * 2014-05-09 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US10325648B2 (en) 2016-12-14 2019-06-18 Qualcomm Incorporated Write driver scheme for bit-writable memories

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873095A (ja) * 1981-10-23 1983-05-02 Toshiba Corp ダイナミツク型メモリ装置
JPS59120597U (ja) * 1983-01-31 1984-08-14 カ−ル事務器株式会社 パンチ
JPS5963091A (ja) * 1982-09-30 1984-04-10 Fujitsu Ltd スタテイツクメモリ回路
JPH0664907B2 (ja) * 1985-06-26 1994-08-22 株式会社日立製作所 ダイナミツク型ｒａｍ
JP3057747B2 (ja) * 1990-11-01 2000-07-04 日本電気株式会社 半導体メモリ装置
JP3160316B2 (ja) * 1991-07-25 2001-04-25 株式会社東芝 不揮発性半導体記憶装置
WO1993007565A1 (en) * 1991-10-01 1993-04-15 Motorola, Inc. Memory write protection method and apparatus
US5406516A (en) * 1992-01-17 1995-04-11 Sharp Kabushiki Kaisha Semiconductor memory device
JP3072871B2 (ja) * 1992-03-19 2000-08-07 株式会社東芝 半導体メモリ装置
US5339274A (en) * 1992-10-30 1994-08-16 International Business Machines Corporation Variable bitline precharge voltage sensing technique for DRAM structures
US5539696A (en) * 1994-01-31 1996-07-23 Patel; Vipul C. Method and apparatus for writing data in a synchronous memory having column independent sections and a method and apparatus for performing write mask operations

Also Published As

Publication number Publication date
TW344896B (en) 1998-11-11
GB2320778B (en) 2001-06-27
GB2320778A (en) 1998-07-01
US6154405A (en) 2000-11-28
GB9718939D0 (en) 1997-11-12
JPH10241368A (ja) 1998-09-11
KR19980063480A (ko) 1998-10-07
KR100286500B1 (ko) 2001-04-16
DE19750884A1 (de) 1998-07-09
DE19750884B4 (de) 2010-01-21

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