KR100286500B1 - 반도체기억장치 - Google Patents

반도체기억장치 Download PDF

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Publication number
KR100286500B1
KR100286500B1 KR1019970048122A KR19970048122A KR100286500B1 KR 100286500 B1 KR100286500 B1 KR 100286500B1 KR 1019970048122 A KR1019970048122 A KR 1019970048122A KR 19970048122 A KR19970048122 A KR 19970048122A KR 100286500 B1 KR100286500 B1 KR 100286500B1
Authority
KR
South Korea
Prior art keywords
bit line
sense amplifier
circuit
data
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970048122A
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English (en)
Korean (ko)
Other versions
KR19980063480A (ko
Inventor
요시히로 다케마에
히로요시 도미타
야스로우 마츠자키
마사오 다구치
마사오 나카노
히로히코 모치즈키
다다오 아이카와
Original Assignee
아끼구사 나오유끼
후지쯔 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아끼구사 나오유끼, 후지쯔 가부시끼가이샤 filed Critical 아끼구사 나오유끼
Publication of KR19980063480A publication Critical patent/KR19980063480A/ko
Application granted granted Critical
Publication of KR100286500B1 publication Critical patent/KR100286500B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
KR1019970048122A 1996-12-25 1997-09-23 반도체기억장치 Expired - Fee Related KR100286500B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP34603296 1996-12-25
JP96-346032 1996-12-25
JP97-142310 1997-05-30
JP14231097A JP4154006B2 (ja) 1996-12-25 1997-05-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR19980063480A KR19980063480A (ko) 1998-10-07
KR100286500B1 true KR100286500B1 (ko) 2001-04-16

Family

ID=26474362

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970048122A Expired - Fee Related KR100286500B1 (ko) 1996-12-25 1997-09-23 반도체기억장치

Country Status (6)

Country Link
US (1) US6154405A (enExample)
JP (1) JP4154006B2 (enExample)
KR (1) KR100286500B1 (enExample)
DE (1) DE19750884B4 (enExample)
GB (1) GB2320778B (enExample)
TW (1) TW344896B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6016390A (en) * 1998-01-29 2000-01-18 Artisan Components, Inc. Method and apparatus for eliminating bitline voltage offsets in memory devices
KR100732287B1 (ko) * 1999-04-08 2007-06-25 주식회사 하이닉스반도체 패킷 명령어 구동형 반도체 메모리 장치
JP5034133B2 (ja) * 2000-02-29 2012-09-26 富士通セミコンダクター株式会社 半導体記憶装置
US7007187B1 (en) * 2000-06-30 2006-02-28 Intel Corporation Method and apparatus for an integrated circuit having flexible-ratio frequency domain cross-overs
JP2002063788A (ja) * 2000-08-21 2002-02-28 Fujitsu Ltd 半導体記憶装置
KR100403612B1 (ko) * 2000-11-08 2003-11-01 삼성전자주식회사 비트라인 프리차아지 시간(ｔＲＰ)을 개선하는 메모리 셀어레이 구조를 갖는 반도체 메모리 장치 및 그 개선 방법
JP4329919B2 (ja) * 2001-03-13 2009-09-09 Ｏｋｉセミコンダクタ株式会社 半導体メモリおよび半導体メモリの駆動方法
KR100600056B1 (ko) * 2004-10-30 2006-07-13 주식회사 하이닉스반도체 저 전압용 반도체 메모리 장치
US7764540B2 (en) * 2006-03-01 2010-07-27 Renesas Technology Corp. Semiconductor memory device
US20090296514A1 (en) * 2008-05-29 2009-12-03 Chih-Hui Yeh Method for accessing a memory chip
JP2011023079A (ja) * 2009-07-17 2011-02-03 Renesas Electronics Corp 半導体装置及びデータの読み出し方法
KR20140028542A (ko) * 2012-08-29 2014-03-10 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
WO2015170220A1 (en) * 2014-05-09 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US10325648B2 (en) 2016-12-14 2019-06-18 Qualcomm Incorporated Write driver scheme for bit-writable memories

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873095A (ja) * 1981-10-23 1983-05-02 Toshiba Corp ダイナミツク型メモリ装置
JPS59120597U (ja) * 1983-01-31 1984-08-14 カ−ル事務器株式会社 パンチ
JPS5963091A (ja) * 1982-09-30 1984-04-10 Fujitsu Ltd スタテイツクメモリ回路
JPH0664907B2 (ja) * 1985-06-26 1994-08-22 株式会社日立製作所 ダイナミツク型ｒａｍ
JP3057747B2 (ja) * 1990-11-01 2000-07-04 日本電気株式会社 半導体メモリ装置
JP3160316B2 (ja) * 1991-07-25 2001-04-25 株式会社東芝 不揮発性半導体記憶装置
WO1993007565A1 (en) * 1991-10-01 1993-04-15 Motorola, Inc. Memory write protection method and apparatus
US5406516A (en) * 1992-01-17 1995-04-11 Sharp Kabushiki Kaisha Semiconductor memory device
JP3072871B2 (ja) * 1992-03-19 2000-08-07 株式会社東芝 半導体メモリ装置
US5339274A (en) * 1992-10-30 1994-08-16 International Business Machines Corporation Variable bitline precharge voltage sensing technique for DRAM structures
US5539696A (en) * 1994-01-31 1996-07-23 Patel; Vipul C. Method and apparatus for writing data in a synchronous memory having column independent sections and a method and apparatus for performing write mask operations

Also Published As

Publication number Publication date
JPH10241368A (ja) 1998-09-11
TW344896B (en) 1998-11-11
GB2320778B (en) 2001-06-27
GB2320778A (en) 1998-07-01
GB9718939D0 (en) 1997-11-12
DE19750884B4 (de) 2010-01-21
DE19750884A1 (de) 1998-07-09
US6154405A (en) 2000-11-28
JP4154006B2 (ja) 2008-09-24
KR19980063480A (ko) 1998-10-07

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