JP4144183B2 - 電気光学装置、その製造方法及び投射型表示装置 - Google Patents

電気光学装置、その製造方法及び投射型表示装置 Download PDF

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Publication number
JP4144183B2
JP4144183B2 JP2001037505A JP2001037505A JP4144183B2 JP 4144183 B2 JP4144183 B2 JP 4144183B2 JP 2001037505 A JP2001037505 A JP 2001037505A JP 2001037505 A JP2001037505 A JP 2001037505A JP 4144183 B2 JP4144183 B2 JP 4144183B2
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film
electro
tft
optical device
electronic element
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Expired - Fee Related
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JP2001037505A
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Japanese (ja)
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JP2002244153A5 (sl
JP2002244153A (ja
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久樹 倉科
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Seiko Epson Corp
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Seiko Epson Corp
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2001037505A 2001-02-14 2001-02-14 電気光学装置、その製造方法及び投射型表示装置 Expired - Fee Related JP4144183B2 (ja)

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JP2001037505A JP4144183B2 (ja) 2001-02-14 2001-02-14 電気光学装置、その製造方法及び投射型表示装置

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JP2001037505A JP4144183B2 (ja) 2001-02-14 2001-02-14 電気光学装置、その製造方法及び投射型表示装置

Publications (3)

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JP2002244153A JP2002244153A (ja) 2002-08-28
JP2002244153A5 JP2002244153A5 (sl) 2005-03-03
JP4144183B2 true JP4144183B2 (ja) 2008-09-03

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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005222019A (ja) * 2004-01-07 2005-08-18 Seiko Epson Corp 電気光学装置及び電子機器、並びに電気光学装置の製造方法
JP4872197B2 (ja) * 2004-08-25 2012-02-08 カシオ計算機株式会社 薄膜トランジスタパネル及びその製造方法
JP4475238B2 (ja) 2006-01-13 2010-06-09 セイコーエプソン株式会社 電気光学装置及びその製造方法、並びに電子機器
JP4245008B2 (ja) 2006-05-10 2009-03-25 セイコーエプソン株式会社 電気光学装置用基板及び電気光学装置、並びに電子機器
US8803781B2 (en) * 2007-05-18 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US20110042693A1 (en) * 2008-05-28 2011-02-24 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof
JP4591573B2 (ja) * 2008-08-06 2010-12-01 セイコーエプソン株式会社 電気光学装置用基板及び電気光学装置、並びに電子機器
JP5548976B2 (ja) 2009-06-25 2014-07-16 セイコーエプソン株式会社 半導体装置
KR101945171B1 (ko) * 2009-12-08 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011074336A1 (ja) * 2009-12-17 2011-06-23 シャープ株式会社 アクティブマトリクス基板、及び製造方法
KR101874779B1 (ko) * 2009-12-25 2018-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치, 반도체 장치, 및 전자 장치
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP2012208294A (ja) * 2011-03-29 2012-10-25 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、投射型表示装置および電子機器
JP2016195212A (ja) * 2015-04-01 2016-11-17 株式会社東芝 半導体集積回路
JP6367167B2 (ja) 2015-09-10 2018-08-01 東芝メモリ株式会社 半導体装置
JP6967622B2 (ja) * 2016-03-23 2021-11-17 株式会社ジャパンディスプレイ 表示装置基板
JP6673731B2 (ja) 2016-03-23 2020-03-25 株式会社ジャパンディスプレイ 表示装置及びその製造方法
KR102596126B1 (ko) * 2016-10-19 2023-10-31 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
CN113488455B (zh) * 2021-05-24 2023-03-21 武汉敏芯半导体股份有限公司 抗干扰的高速光接收器件

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