JP4131101B2 - 窒化物半導体素子の製造方法 - Google Patents

窒化物半導体素子の製造方法 Download PDF

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Publication number
JP4131101B2
JP4131101B2 JP2001363030A JP2001363030A JP4131101B2 JP 4131101 B2 JP4131101 B2 JP 4131101B2 JP 2001363030 A JP2001363030 A JP 2001363030A JP 2001363030 A JP2001363030 A JP 2001363030A JP 4131101 B2 JP4131101 B2 JP 4131101B2
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nitride semiconductor
layer
substrate
type
grown
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Japanese (ja)
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JP2002261014A (ja
JP2002261014A5 (https=
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徳也 小崎
修二 中村
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Nichia Corp
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Nichia Corp
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  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2001363030A 2001-11-28 2001-11-28 窒化物半導体素子の製造方法 Expired - Fee Related JP4131101B2 (ja)

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JP2001363030A JP4131101B2 (ja) 2001-11-28 2001-11-28 窒化物半導体素子の製造方法

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JP2001363030A JP4131101B2 (ja) 2001-11-28 2001-11-28 窒化物半導体素子の製造方法

Related Parent Applications (1)

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JP5604797A Division JP3292083B2 (ja) 1997-03-11 1997-03-11 窒化物半導体基板の製造方法及び窒化物半導体素子の製造方法

Related Child Applications (1)

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JP2008098853A Division JP5012629B2 (ja) 2008-04-07 2008-04-07 窒化物半導体素子の製造方法

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JP2002261014A JP2002261014A (ja) 2002-09-13
JP2002261014A5 JP2002261014A5 (https=) 2005-08-25
JP4131101B2 true JP4131101B2 (ja) 2008-08-13

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4895466B2 (ja) * 2002-10-29 2012-03-14 日亜化学工業株式会社 窒化物半導体素子およびその製造方法
KR100550491B1 (ko) 2003-05-06 2006-02-09 스미토모덴키고교가부시키가이샤 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법
JP2005268581A (ja) 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
US7846757B2 (en) 2005-06-01 2010-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
JP5194334B2 (ja) 2004-05-18 2013-05-08 住友電気工業株式会社 Ｉｉｉ族窒化物半導体デバイスの製造方法
KR100682880B1 (ko) * 2005-01-07 2007-02-15 삼성코닝 주식회사 결정 성장 방법
KR100682879B1 (ko) 2005-01-07 2007-02-15 삼성코닝 주식회사 결정 성장 방법
JP4656410B2 (ja) 2005-09-05 2011-03-23 住友電気工業株式会社 窒化物半導体デバイスの製造方法
DE602006008256D1 (de) 2005-12-15 2009-09-17 Lg Electronics Inc LED mit vertikaler Struktur und deren Herstellungsverfahren
KR100808197B1 (ko) * 2006-07-06 2008-02-29 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
US8357243B2 (en) 2008-06-12 2013-01-22 Sixpoint Materials, Inc. Method for testing group III-nitride wafers and group III-nitride wafers with test data
TWI487817B (zh) 2008-02-25 2015-06-11 Sixpoint Materials Inc 用於製造第iii族氮化物晶圓之方法及第iii族氮化物晶圓
JP5128335B2 (ja) * 2008-03-26 2013-01-23 古河電気工業株式会社 ＧａＮ系半導体基板、その製造方法および半導体素子
EP2291551B1 (en) 2008-06-04 2018-04-25 SixPoint Materials, Inc. High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
WO2009149299A1 (en) 2008-06-04 2009-12-10 Sixpoint Materials Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
WO2010060034A1 (en) 2008-11-24 2010-05-27 Sixpoint Materials, Inc. METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH
JP2009078972A (ja) * 2009-01-07 2009-04-16 Sumitomo Electric Ind Ltd 窒化物半導体単結晶基板とその合成方法
WO2010129718A2 (en) 2009-05-05 2010-11-11 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
WO2010150809A1 (ja) 2009-06-24 2010-12-29 日亜化学工業株式会社 窒化物半導体発光ダイオード
KR102062381B1 (ko) * 2012-11-30 2020-01-03 서울바이오시스 주식회사 질화물 반도체층 성장 방법 및 질화물 반도체 소자 제조 방법
WO2016020990A1 (ja) * 2014-08-05 2016-02-11 株式会社サイオスク 窒化物半導体テンプレート及び発光素子
JP6727186B2 (ja) * 2017-12-28 2020-07-22 日機装株式会社 窒化物半導体素子の製造方法
JP7216270B2 (ja) * 2018-09-28 2023-02-01 日亜化学工業株式会社 半導体発光素子

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