JP4127466B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4127466B2
JP4127466B2 JP2001227219A JP2001227219A JP4127466B2 JP 4127466 B2 JP4127466 B2 JP 4127466B2 JP 2001227219 A JP2001227219 A JP 2001227219A JP 2001227219 A JP2001227219 A JP 2001227219A JP 4127466 B2 JP4127466 B2 JP 4127466B2
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Japan
Prior art keywords
film
region
insulating film
semiconductor
mask
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Expired - Fee Related
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JP2001227219A
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Japanese (ja)
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JP2002175028A (ja
JP2002175028A5 (enExample
Inventor
悦子 藤本
智史 村上
舜平 山崎
晋吾 江口
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001227219A priority Critical patent/JP4127466B2/ja
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Publication of JP2002175028A5 publication Critical patent/JP2002175028A5/ja
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Publication of JP4127466B2 publication Critical patent/JP4127466B2/ja
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001227219A 2000-07-31 2001-07-27 半導体装置の作製方法 Expired - Fee Related JP4127466B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001227219A JP4127466B2 (ja) 2000-07-31 2001-07-27 半導体装置の作製方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2000-230401 2000-07-31
JP2000230401 2000-07-31
JP2000-301390 2000-09-29
JP2000301390 2000-09-29
JP2000301389 2000-09-29
JP2000-301389 2000-09-29
JP2001227219A JP4127466B2 (ja) 2000-07-31 2001-07-27 半導体装置の作製方法

Related Child Applications (1)

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JP2005050519A Division JP4954482B2 (ja) 2000-07-31 2005-02-25 半導体装置の作製方法

Publications (3)

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JP2002175028A JP2002175028A (ja) 2002-06-21
JP2002175028A5 JP2002175028A5 (enExample) 2005-09-02
JP4127466B2 true JP4127466B2 (ja) 2008-07-30

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JP2001227219A Expired - Fee Related JP4127466B2 (ja) 2000-07-31 2001-07-27 半導体装置の作製方法

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4954482B2 (ja) * 2000-07-31 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6613620B2 (en) 2000-07-31 2003-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
KR20060070345A (ko) 2004-12-20 2006-06-23 삼성전자주식회사 박막 트랜지스터 표시판
KR101131793B1 (ko) 2005-05-31 2012-03-30 삼성전자주식회사 폴리 실리콘형 박막트랜지스터 및 이를 갖는 박막트랜지스터 기판 및 이의 제조 방법
KR20070002933A (ko) * 2005-06-30 2007-01-05 엘지.필립스 엘시디 주식회사 폴리 박막 트랜지스터 기판 및 그 제조 방법
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
KR20220046701A (ko) * 2013-12-27 2022-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
CN107533981B (zh) 2015-04-28 2020-12-15 夏普株式会社 半导体装置以及其制造方法
US11024725B2 (en) * 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film
JPWO2018167588A1 (ja) * 2017-03-13 2020-01-09 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
KR102835255B1 (ko) * 2020-10-12 2025-07-16 엘지디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 포함하는 표시장치
JP2024051551A (ja) * 2022-09-30 2024-04-11 株式会社ジャパンディスプレイ 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683781A (en) * 1979-12-10 1981-07-08 Matsushita Electric Industrial Co Ltd Image display unit and production thereof
JP3398453B2 (ja) * 1994-02-24 2003-04-21 株式会社東芝 薄膜トランジスタの製造方法
JPH08274336A (ja) * 1995-03-30 1996-10-18 Toshiba Corp 多結晶半導体薄膜トランジスタ及びその製造方法
JPH10125928A (ja) * 1996-10-23 1998-05-15 Semiconductor Energy Lab Co Ltd 半導体集積回路及びその作製方法
JP3282582B2 (ja) * 1998-04-21 2002-05-13 日本電気株式会社 トップゲート型薄膜トランジスタ及びその製造方法
JP2000012712A (ja) * 1998-06-25 2000-01-14 Hitachi Ltd 半導体装置及びその製造方法
JP3587292B2 (ja) * 1998-12-24 2004-11-10 シャープ株式会社 半導体装置の製造方法
JP4008133B2 (ja) * 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
JP3728958B2 (ja) * 1998-12-28 2005-12-21 セイコーエプソン株式会社 電気光学装置及びその製造方法

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