JP4126749B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4126749B2
JP4126749B2 JP11256998A JP11256998A JP4126749B2 JP 4126749 B2 JP4126749 B2 JP 4126749B2 JP 11256998 A JP11256998 A JP 11256998A JP 11256998 A JP11256998 A JP 11256998A JP 4126749 B2 JP4126749 B2 JP 4126749B2
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substrate
side electrode
manufacturing
electrode
semiconductor device
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Expired - Fee Related
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JP11256998A
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Japanese (ja)
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JPH11307870A5 (https=
JPH11307870A (ja
Inventor
修 松田
俊雅 小林
典一 中山
弘治 河合
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Sony Corp
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Sony Corp
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Priority to JP11256998A priority Critical patent/JP4126749B2/ja
Priority to US09/291,016 priority patent/US6281032B1/en
Publication of JPH11307870A publication Critical patent/JPH11307870A/ja
Publication of JPH11307870A5 publication Critical patent/JPH11307870A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Electroluminescent Light Sources (AREA)
  • Dicing (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
JP11256998A 1998-04-22 1998-04-22 半導体装置の製造方法 Expired - Fee Related JP4126749B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11256998A JP4126749B2 (ja) 1998-04-22 1998-04-22 半導体装置の製造方法
US09/291,016 US6281032B1 (en) 1998-04-22 1999-04-14 Manufacturing method for nitride III-V compound semiconductor device using bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11256998A JP4126749B2 (ja) 1998-04-22 1998-04-22 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH11307870A JPH11307870A (ja) 1999-11-05
JPH11307870A5 JPH11307870A5 (https=) 2005-08-11
JP4126749B2 true JP4126749B2 (ja) 2008-07-30

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JP11256998A Expired - Fee Related JP4126749B2 (ja) 1998-04-22 1998-04-22 半導体装置の製造方法

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US (1) US6281032B1 (https=)
JP (1) JP4126749B2 (https=)

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US6235141B1 (en) 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
US6184465B1 (en) * 1998-11-12 2001-02-06 Micron Technology, Inc. Semiconductor package
JP4897133B2 (ja) * 1999-12-09 2012-03-14 ソニー株式会社 半導体発光素子、その製造方法および配設基板
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6445009B1 (en) * 2000-08-08 2002-09-03 Centre National De La Recherche Scientifique Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings
DE10040450B4 (de) * 2000-08-18 2008-07-10 Osram Opto Semiconductors Gmbh Halbleiterlaserbauelement mit einem Kühlelement
DE10042947A1 (de) * 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
WO2003034508A1 (fr) * 2001-10-12 2003-04-24 Nichia Corporation Dispositif d'emission de lumiere et procede de fabrication de celui-ci
US6568098B1 (en) * 2001-12-28 2003-05-27 Microtool, Inc. Alignment wafer
US6665329B1 (en) * 2002-06-06 2003-12-16 Sandia Corporation Broadband visible light source based on AllnGaN light emitting diodes
KR101030068B1 (ko) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
JP2005150692A (ja) * 2003-10-21 2005-06-09 Sharp Corp 半導体レーザ装置
US7041579B2 (en) * 2003-10-22 2006-05-09 Northrop Grumman Corporation Hard substrate wafer sawing process
DE10355600B4 (de) * 2003-11-28 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips
EP1569263B1 (de) * 2004-02-27 2011-11-23 OSRAM Opto Semiconductors GmbH Verfahren zum Verbinden zweier Wafer
JP2006019400A (ja) * 2004-06-30 2006-01-19 Sanyo Electric Co Ltd 発光素子およびその製造方法
WO2006031641A2 (en) * 2004-09-10 2006-03-23 Cree, Inc. Method of manufacturing carrier wafer and resulting carrier wafer structures
AU2005304910B2 (en) * 2004-11-04 2010-11-18 Microchips, Inc. Compression and cold weld sealing methods and devices
JP2006179826A (ja) * 2004-12-24 2006-07-06 Fanuc Ltd 半導体レーザ装置
US8130806B2 (en) * 2005-06-22 2012-03-06 Binoptics Corporation AlGaInN-based lasers produced using etched facet technology
JP4411540B2 (ja) 2005-09-15 2010-02-10 ソニー株式会社 半導体レーザ装置
JP4650631B2 (ja) * 2005-11-30 2011-03-16 ソニー株式会社 半導体発光装置
US20080145960A1 (en) * 2006-12-15 2008-06-19 Gelcore, Llc Super thin LED package for the backlighting applications and fabrication method
US20080181558A1 (en) * 2007-01-31 2008-07-31 Hartwell Peter G Electronic and optical circuit integration through wafer bonding
KR101364719B1 (ko) * 2007-03-29 2014-02-20 서울바이오시스 주식회사 수직형 발광 다이오드 제조방법
EP1993126B1 (en) * 2007-05-18 2011-09-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor substrate
DE102008014121A1 (de) * 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Halbleiterchip
US9048169B2 (en) * 2008-05-23 2015-06-02 Soitec Formation of substantially pit free indium gallium nitride
KR101589897B1 (ko) * 2009-05-18 2016-01-29 박기용 서브마운트 접합 방법 및 그 장치
JP2011171327A (ja) * 2010-02-16 2011-09-01 Toshiba Corp 発光素子およびその製造方法、並びに発光装置
KR102054337B1 (ko) * 2012-08-07 2020-01-22 루미리즈 홀딩 비.브이. Ｌｅｄ 패키지 및 제조 방법
DE102012107409B4 (de) * 2012-08-13 2022-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiter-Laserelements
JP6291822B2 (ja) * 2012-12-25 2018-03-14 株式会社ニコン 基板および基板接合方法
CN104051285B (zh) * 2013-03-12 2017-04-26 台湾积体电路制造股份有限公司 两步直接接合工艺及其实施工具
US9521795B2 (en) * 2013-03-12 2016-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Two-step direct bonding processes and tools for performing the same
US9690042B2 (en) * 2013-05-23 2017-06-27 Electronics And Telecommunications Research Institute Optical input/output device, optical electronic system including the same, and method of manufacturing the same
JP6210415B2 (ja) * 2013-07-05 2017-10-11 パナソニックＩｐマネジメント株式会社 紫外線発光素子の製造方法
DE102017108385A1 (de) 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Laserbarren und Halbleiterlaser sowie Verfahren zur Herstellung von Laserbarren und Halbleiterlasern
KR20210120058A (ko) * 2019-04-19 2021-10-06 푸졘 징안 옵토일렉트로닉스 컴퍼니 리미티드 광전 반도체칩의 제조 방법 및 이에 사용되는 본딩 웨이퍼
JP7502659B2 (ja) * 2021-12-23 2024-06-19 日亜化学工業株式会社 発光装置および基板

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JPH11307870A (ja) 1999-11-05

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