JP4099114B2 - 感光性樹脂組成物 - Google Patents

感光性樹脂組成物 Download PDF

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Publication number
JP4099114B2
JP4099114B2 JP2003182087A JP2003182087A JP4099114B2 JP 4099114 B2 JP4099114 B2 JP 4099114B2 JP 2003182087 A JP2003182087 A JP 2003182087A JP 2003182087 A JP2003182087 A JP 2003182087A JP 4099114 B2 JP4099114 B2 JP 4099114B2
Authority
JP
Japan
Prior art keywords
resin composition
photosensitive resin
polymerization initiator
alkali
cyano group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003182087A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005017666A (ja
Inventor
修一 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Japan Co Ltd
Original Assignee
AZ Electronic Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Japan Co Ltd filed Critical AZ Electronic Materials Japan Co Ltd
Priority to JP2003182087A priority Critical patent/JP4099114B2/ja
Priority to CNB2004800169298A priority patent/CN100547485C/zh
Priority to KR1020057024971A priority patent/KR100983210B1/ko
Priority to PCT/JP2004/008531 priority patent/WO2005001575A1/ja
Priority to TW093118414A priority patent/TWI332121B/zh
Publication of JP2005017666A publication Critical patent/JP2005017666A/ja
Application granted granted Critical
Publication of JP4099114B2 publication Critical patent/JP4099114B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
JP2003182087A 2003-06-26 2003-06-26 感光性樹脂組成物 Expired - Fee Related JP4099114B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003182087A JP4099114B2 (ja) 2003-06-26 2003-06-26 感光性樹脂組成物
CNB2004800169298A CN100547485C (zh) 2003-06-26 2004-06-17 光敏树脂组合物
KR1020057024971A KR100983210B1 (ko) 2003-06-26 2004-06-17 감광성 수지 조성물
PCT/JP2004/008531 WO2005001575A1 (ja) 2003-06-26 2004-06-17 感光性樹脂組成物
TW093118414A TWI332121B (en) 2003-06-26 2004-06-25 Photosensitive resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003182087A JP4099114B2 (ja) 2003-06-26 2003-06-26 感光性樹脂組成物

Publications (2)

Publication Number Publication Date
JP2005017666A JP2005017666A (ja) 2005-01-20
JP4099114B2 true JP4099114B2 (ja) 2008-06-11

Family

ID=33549545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003182087A Expired - Fee Related JP4099114B2 (ja) 2003-06-26 2003-06-26 感光性樹脂組成物

Country Status (5)

Country Link
JP (1) JP4099114B2 (ko)
KR (1) KR100983210B1 (ko)
CN (1) CN100547485C (ko)
TW (1) TWI332121B (ko)
WO (1) WO2005001575A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5338352B2 (ja) * 2009-02-09 2013-11-13 日油株式会社 ポジ型感光性樹脂組成物
KR20110045418A (ko) * 2009-10-27 2011-05-04 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 표시 기판의 제조 방법
KR101930975B1 (ko) * 2011-06-20 2018-12-19 닛뽄 가야쿠 가부시키가이샤 네거티브형 감광성 수지 조성물 및 그 경화물
JP2013130816A (ja) * 2011-12-22 2013-07-04 Nippon Zeon Co Ltd 永久膜用樹脂組成物及び電子部品
KR101807630B1 (ko) * 2013-12-11 2017-12-11 후지필름 가부시키가이샤 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 액정 표시 장치 및 유기 el 표시 장치
KR20160111805A (ko) * 2015-03-17 2016-09-27 동우 화인켐 주식회사 감광성 수지 조성물, 이로부터 형성된 광경화 패턴 및 이를 포함하는 화상 표시 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05297582A (ja) * 1992-04-23 1993-11-12 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
JPH08301990A (ja) * 1995-05-09 1996-11-19 Nippon Kayaku Co Ltd 樹脂組成物、レジストインキ組成物及びその硬化物
JP3901266B2 (ja) * 1996-11-15 2007-04-04 東京応化工業株式会社 感光性樹脂組成物
JP3873263B2 (ja) * 1997-09-22 2007-01-24 Ｊｓｒ株式会社 感放射線性樹脂組成物、保護膜、層間絶縁膜およびこれらの膜の形成法
JP4221819B2 (ja) * 1999-06-01 2009-02-12 東レ株式会社 感光性樹脂前駆体組成物
US6524764B1 (en) * 1999-06-01 2003-02-25 Toray Industries, Inc. Positive-type photosensitive polyimide precursor composition
JP2000347397A (ja) * 1999-06-04 2000-12-15 Jsr Corp 感放射線性樹脂組成物およびその層間絶縁膜への使用
JP2002116536A (ja) * 2000-10-06 2002-04-19 Jsr Corp 感放射線性樹脂組成物、その硬化物および素子。
JP2003029407A (ja) * 2001-05-07 2003-01-29 Sumitomo Bakelite Co Ltd ポジ型感光性樹脂組成物及び半導体装置
JP3848653B2 (ja) 2001-09-27 2006-11-22 Ａｚエレクトロニックマテリアルズ株式会社 感光性樹脂組成物

Also Published As

Publication number Publication date
TWI332121B (en) 2010-10-21
JP2005017666A (ja) 2005-01-20
WO2005001575A1 (ja) 2005-01-06
TW200504461A (en) 2005-02-01
CN1806206A (zh) 2006-07-19
KR20060027817A (ko) 2006-03-28
KR100983210B1 (ko) 2010-09-20
CN100547485C (zh) 2009-10-07

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