TW200504461A - Photosensitive resin composition - Google Patents
Photosensitive resin compositionInfo
- Publication number
- TW200504461A TW200504461A TW093118414A TW93118414A TW200504461A TW 200504461 A TW200504461 A TW 200504461A TW 093118414 A TW093118414 A TW 093118414A TW 93118414 A TW93118414 A TW 93118414A TW 200504461 A TW200504461 A TW 200504461A
- Authority
- TW
- Taiwan
- Prior art keywords
- resin composition
- photosensitive resin
- photosensitizer
- alkali
- group
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials For Photolithography (AREA)
- Polymerisation Methods In General (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
To provide a photosensitive resin composition comprising an alkali-soluble resin and a photosensitizer, whereby a film which can keep the flatness of the film surface even after baking at high temperature and has good light transparency, and it has good stability with time and particularly applicable to the formation of an interlayer insulating film and a flat panel display and a semiconductor using it. A photosensitive resin composition comprises an alkali-soluble resin, photosensitizer having a quinonediazido group, and a curing agent, wherein the alkali-soluble resin is an acrylic resin, the photosensitizer having a quinonediazido group is a reaction product of a phenolic compound represented by the following general formula (I) and a quinine diazide compound, and the curing agent contains epoxy group. Optionally, the photosensitive resin composition may further comprises a phenolic compound and a curing promoter. wherein R1, R2, R3 and R4 independently of one another, represent H or C1-C2 alkyl group, R5 and R6, independently of one another, represent C1-C2 alkyl group.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003182087A JP4099114B2 (en) | 2003-06-26 | 2003-06-26 | Photosensitive resin composition |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200504461A true TW200504461A (en) | 2005-02-01 |
TWI332121B TWI332121B (en) | 2010-10-21 |
Family
ID=33549545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093118414A TWI332121B (en) | 2003-06-26 | 2004-06-25 | Photosensitive resin composition |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4099114B2 (en) |
KR (1) | KR100983210B1 (en) |
CN (1) | CN100547485C (en) |
TW (1) | TWI332121B (en) |
WO (1) | WO2005001575A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI676627B (en) * | 2015-03-17 | 2019-11-11 | 南韓商東友精細化工有限公司 | Photosensitive resin composition, photocurable pattern formed from the same and image display comprising the pattern |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5338352B2 (en) * | 2009-02-09 | 2013-11-13 | 日油株式会社 | Positive photosensitive resin composition |
KR20110045418A (en) * | 2009-10-27 | 2011-05-04 | 삼성전자주식회사 | Photoresist composition and method of manufacturing a display substrate using the photoresist composition |
CN103608727A (en) * | 2011-06-20 | 2014-02-26 | 日本化药株式会社 | Negative photosensitive resin composition and cured product of same |
JP2013130816A (en) * | 2011-12-22 | 2013-07-04 | Nippon Zeon Co Ltd | Resin composition for permanent film and electronic component |
KR101807630B1 (en) * | 2013-12-11 | 2017-12-11 | 후지필름 가부시키가이샤 | Photosensitive resin composition, method for producing cured film, cured film, liquid crystal display device and organic el display device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05297582A (en) * | 1992-04-23 | 1993-11-12 | Fuji Photo Film Co Ltd | Positive photoresist composition |
JPH08301990A (en) * | 1995-05-09 | 1996-11-19 | Nippon Kayaku Co Ltd | Resin composition, resist ink composition, and cured product thereof |
JP3901266B2 (en) * | 1996-11-15 | 2007-04-04 | 東京応化工業株式会社 | Photosensitive resin composition |
JP3873263B2 (en) * | 1997-09-22 | 2007-01-24 | Jsr株式会社 | Radiation-sensitive resin composition, protective film, interlayer insulating film, and method for forming these films |
JP4221819B2 (en) * | 1999-06-01 | 2009-02-12 | 東レ株式会社 | Photosensitive resin precursor composition |
US6524764B1 (en) * | 1999-06-01 | 2003-02-25 | Toray Industries, Inc. | Positive-type photosensitive polyimide precursor composition |
JP2000347397A (en) * | 1999-06-04 | 2000-12-15 | Jsr Corp | Radiation sensitive resin composition and its use for interlayer dielectric |
JP2002116536A (en) * | 2000-10-06 | 2002-04-19 | Jsr Corp | Radiation sensitive resin composition, its cured body and element |
JP2003029407A (en) * | 2001-05-07 | 2003-01-29 | Sumitomo Bakelite Co Ltd | Positive photosensitive resin composition and semiconductor device |
JP3848653B2 (en) | 2001-09-27 | 2006-11-22 | Azエレクトロニックマテリアルズ株式会社 | Photosensitive resin composition |
-
2003
- 2003-06-26 JP JP2003182087A patent/JP4099114B2/en not_active Expired - Fee Related
-
2004
- 2004-06-17 KR KR1020057024971A patent/KR100983210B1/en not_active IP Right Cessation
- 2004-06-17 CN CNB2004800169298A patent/CN100547485C/en not_active Expired - Fee Related
- 2004-06-17 WO PCT/JP2004/008531 patent/WO2005001575A1/en active Application Filing
- 2004-06-25 TW TW093118414A patent/TWI332121B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI676627B (en) * | 2015-03-17 | 2019-11-11 | 南韓商東友精細化工有限公司 | Photosensitive resin composition, photocurable pattern formed from the same and image display comprising the pattern |
Also Published As
Publication number | Publication date |
---|---|
WO2005001575A1 (en) | 2005-01-06 |
KR100983210B1 (en) | 2010-09-20 |
JP4099114B2 (en) | 2008-06-11 |
JP2005017666A (en) | 2005-01-20 |
TWI332121B (en) | 2010-10-21 |
CN1806206A (en) | 2006-07-19 |
CN100547485C (en) | 2009-10-07 |
KR20060027817A (en) | 2006-03-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |