JP4080892B2 - マルチビットプリフェッチ出力データパス - Google Patents

マルチビットプリフェッチ出力データパス Download PDF

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Publication number
JP4080892B2
JP4080892B2 JP2002586351A JP2002586351A JP4080892B2 JP 4080892 B2 JP4080892 B2 JP 4080892B2 JP 2002586351 A JP2002586351 A JP 2002586351A JP 2002586351 A JP2002586351 A JP 2002586351A JP 4080892 B2 JP4080892 B2 JP 4080892B2
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JP
Japan
Prior art keywords
output
signal
data
data bits
enable signal
Prior art date
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Expired - Fee Related
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JP2002586351A
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English (en)
Japanese (ja)
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JP2004523056A5 (enExample
JP2004523056A (ja
Inventor
モーザノ，クリストファー，ケイ
リー，ウェン
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Micron Technology Inc
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Micron Technology Inc
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Publication of JP2004523056A5 publication Critical patent/JP2004523056A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1066—Output synchronization
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G11C7/1012—Data reordering during input/output, e.g. crossbars, layers of multiplexers, shifting or rotating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1039—Read-write modes for single port memories, i.e. having either a random port or a serial port using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2281—Timing of a read operation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Prostheses (AREA)
JP2002586351A 2001-03-14 2002-03-08 マルチビットプリフェッチ出力データパス Expired - Fee Related JP4080892B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/808,506 US6556494B2 (en) 2001-03-14 2001-03-14 High frequency range four bit prefetch output data path
PCT/US2002/007668 WO2002089141A1 (en) 2001-03-14 2002-03-08 Multiple bit prefetch output data path

Publications (3)

Publication Number Publication Date
JP2004523056A JP2004523056A (ja) 2004-07-29
JP2004523056A5 JP2004523056A5 (enExample) 2005-11-17
JP4080892B2 true JP4080892B2 (ja) 2008-04-23

Family

ID=25198971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002586351A Expired - Fee Related JP4080892B2 (ja) 2001-03-14 2002-03-08 マルチビットプリフェッチ出力データパス

Country Status (8)

Country Link
US (2) US6556494B2 (enExample)
EP (1) EP1377982B1 (enExample)
JP (1) JP4080892B2 (enExample)
KR (1) KR100568646B1 (enExample)
CN (1) CN100565698C (enExample)
AT (1) ATE341082T1 (enExample)
DE (1) DE60214992T2 (enExample)
WO (1) WO2002089141A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4812976B2 (ja) * 2001-07-30 2011-11-09 エルピーダメモリ株式会社 レジスタ、メモリモジュール及びメモリシステム
JP2003044349A (ja) * 2001-07-30 2003-02-14 Elpida Memory Inc レジスタ及び信号生成方法
US7549011B2 (en) * 2001-08-30 2009-06-16 Micron Technology, Inc. Bit inversion in memory devices
US6785168B2 (en) * 2002-12-27 2004-08-31 Hynix Semiconductor Inc. Semiconductor memory device having advanced prefetch block
KR100518564B1 (ko) * 2003-04-03 2005-10-04 삼성전자주식회사 이중 데이터율 동기식 메모리장치의 출력 멀티플렉싱 회로및 방법
KR100564596B1 (ko) * 2003-12-18 2006-03-28 삼성전자주식회사 멀티비트 데이터의 지연 시간 보상이 가능한 반도체메모리 장치
JP2005182939A (ja) * 2003-12-22 2005-07-07 Toshiba Corp 半導体記憶装置
US7016235B2 (en) * 2004-03-03 2006-03-21 Promos Technologies Pte. Ltd. Data sorting in memories
US7054215B2 (en) * 2004-04-02 2006-05-30 Promos Technologies Pte. Ltd. Multistage parallel-to-serial conversion of read data in memories, with the first serial bit skipping at least one stage
KR100562645B1 (ko) * 2004-10-29 2006-03-20 주식회사 하이닉스반도체 반도체 기억 소자
US7230858B2 (en) * 2005-06-28 2007-06-12 Infineon Technologies Ag Dual frequency first-in-first-out structure
US7349289B2 (en) 2005-07-08 2008-03-25 Promos Technologies Inc. Two-bit per I/O line write data bus for DDR1 and DDR2 operating modes in a DRAM
US7358872B2 (en) * 2005-09-01 2008-04-15 Micron Technology, Inc. Method and apparatus for converting parallel data to serial data in high speed applications
US7567465B2 (en) * 2007-08-30 2009-07-28 Micron Technology, Inc. Power saving sensing scheme for solid state memory
JP2011058847A (ja) * 2009-09-07 2011-03-24 Renesas Electronics Corp 半導体集積回路装置
KR20110088947A (ko) * 2010-01-29 2011-08-04 주식회사 하이닉스반도체 반도체 메모리의 데이터 출력 회로
TWI459401B (zh) * 2011-03-09 2014-11-01 Etron Technology Inc 應用於一記憶體電路內複數個記憶區塊的栓鎖系統
TWI490698B (zh) * 2013-05-10 2015-07-01 Integrated Circuit Solution Inc 高速資料傳輸架構
US9412294B2 (en) 2013-08-22 2016-08-09 Boe Technology Group Co., Ltd. Data transmission device, data transmission method and display device
CN103413516B (zh) * 2013-08-22 2016-03-30 京东方科技集团股份有限公司 数据传输装置、数据传输方法及显示装置
EP3714370B1 (en) * 2017-11-24 2022-01-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Data bus with multi-input pipeline
CN111208867B (zh) * 2019-12-27 2021-08-24 芯创智（北京）微电子有限公司 一种基于ddr读数据整数时钟周期的同步电路及同步方法
CN116705132B (zh) * 2022-02-24 2024-05-14 长鑫存储技术有限公司 数据传输电路、数据传输方法和存储器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10255459A (ja) 1997-03-10 1998-09-25 Mitsubishi Electric Corp ラインメモリ
JPH11176158A (ja) * 1997-12-10 1999-07-02 Fujitsu Ltd ラッチ回路、データ出力回路及びこれを有する半導体装置
TW430815B (en) * 1998-06-03 2001-04-21 Fujitsu Ltd Semiconductor integrated circuit memory and, bus control method
JP2000076853A (ja) 1998-06-17 2000-03-14 Mitsubishi Electric Corp 同期型半導体記憶装置

Also Published As

Publication number Publication date
CN1543650A (zh) 2004-11-03
DE60214992D1 (de) 2006-11-09
US20020131313A1 (en) 2002-09-19
ATE341082T1 (de) 2006-10-15
US6556494B2 (en) 2003-04-29
WO2002089141A1 (en) 2002-11-07
KR20040041541A (ko) 2004-05-17
JP2004523056A (ja) 2004-07-29
US6600691B2 (en) 2003-07-29
DE60214992T2 (de) 2007-10-18
CN100565698C (zh) 2009-12-02
EP1377982A1 (en) 2004-01-07
KR100568646B1 (ko) 2006-04-07
US20020186608A1 (en) 2002-12-12
EP1377982B1 (en) 2006-09-27

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