JP4012743B2 - 光検出装置 - Google Patents

光検出装置 Download PDF

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Publication number
JP4012743B2
JP4012743B2 JP2002034298A JP2002034298A JP4012743B2 JP 4012743 B2 JP4012743 B2 JP 4012743B2 JP 2002034298 A JP2002034298 A JP 2002034298A JP 2002034298 A JP2002034298 A JP 2002034298A JP 4012743 B2 JP4012743 B2 JP 4012743B2
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JP
Japan
Prior art keywords
substrate
capacitive element
input
region
photodiodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002034298A
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English (en)
Japanese (ja)
Other versions
JP2003232679A5 (enExample
JP2003232679A (ja
Inventor
誠一郎 水野
辰己 山中
義磨郎 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2002034298A priority Critical patent/JP4012743B2/ja
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to PCT/JP2003/001444 priority patent/WO2003069288A1/ja
Priority to EP03703333.9A priority patent/EP1473553B1/en
Priority to CNB038036436A priority patent/CN100432641C/zh
Priority to AU2003207058A priority patent/AU2003207058A1/en
Priority to US10/504,267 priority patent/US7336808B2/en
Publication of JP2003232679A publication Critical patent/JP2003232679A/ja
Priority to IL163454A priority patent/IL163454A/en
Publication of JP2003232679A5 publication Critical patent/JP2003232679A5/ja
Application granted granted Critical
Publication of JP4012743B2 publication Critical patent/JP4012743B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H10W90/00—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2002034298A 2002-02-12 2002-02-12 光検出装置 Expired - Fee Related JP4012743B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002034298A JP4012743B2 (ja) 2002-02-12 2002-02-12 光検出装置
EP03703333.9A EP1473553B1 (en) 2002-02-12 2003-02-12 Stacked optical sensor
CNB038036436A CN100432641C (zh) 2002-02-12 2003-02-12 光检测装置
AU2003207058A AU2003207058A1 (en) 2002-02-12 2003-02-12 Optical sensor
PCT/JP2003/001444 WO2003069288A1 (en) 2002-02-12 2003-02-12 Optical sensor
US10/504,267 US7336808B2 (en) 2002-02-12 2003-02-12 Optical sensor
IL163454A IL163454A (en) 2002-02-12 2004-08-10 Optical sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002034298A JP4012743B2 (ja) 2002-02-12 2002-02-12 光検出装置

Publications (3)

Publication Number Publication Date
JP2003232679A JP2003232679A (ja) 2003-08-22
JP2003232679A5 JP2003232679A5 (enExample) 2005-06-30
JP4012743B2 true JP4012743B2 (ja) 2007-11-21

Family

ID=27678025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002034298A Expired - Fee Related JP4012743B2 (ja) 2002-02-12 2002-02-12 光検出装置

Country Status (7)

Country Link
US (1) US7336808B2 (enExample)
EP (1) EP1473553B1 (enExample)
JP (1) JP4012743B2 (enExample)
CN (1) CN100432641C (enExample)
AU (1) AU2003207058A1 (enExample)
IL (1) IL163454A (enExample)
WO (1) WO2003069288A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10453888B2 (en) 2017-03-30 2019-10-22 Canon Kabushiki Kaisha Semiconductor apparatus and equipment having laminated layers

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1554760B1 (en) * 2002-10-25 2009-08-19 Ipl Intellectual Property Licensing Limited Circuit substrate and method
US7170143B2 (en) 2003-10-20 2007-01-30 Hamamatsu Photonics K.K. Semiconductor photo-detection device and radiation apparatus
JP4589030B2 (ja) * 2004-05-10 2010-12-01 浜松ホトニクス株式会社 光検出装置
US20060045383A1 (en) * 2004-08-31 2006-03-02 Picciotto Carl E Displacement estimation system and method
TWI429066B (zh) 2005-06-02 2014-03-01 新力股份有限公司 Semiconductor image sensor module and manufacturing method thereof
KR101281991B1 (ko) * 2005-07-27 2013-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR100798276B1 (ko) * 2006-08-23 2008-01-24 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
JP5085122B2 (ja) 2006-12-21 2012-11-28 浜松ホトニクス株式会社 半導体光検出素子及び放射線検出装置
KR100860466B1 (ko) * 2006-12-27 2008-09-25 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그 제조방법
JP2009158570A (ja) * 2007-12-25 2009-07-16 Seiko Instruments Inc 光検出半導体装置、光検出装置、及び画像表示装置
KR100856942B1 (ko) * 2008-01-07 2008-09-04 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP5256862B2 (ja) * 2008-06-06 2013-08-07 富士通株式会社 撮像デバイス
JP5185206B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185205B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185207B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5185208B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオード及びフォトダイオードアレイ
JP2010283223A (ja) * 2009-06-05 2010-12-16 Hamamatsu Photonics Kk 半導体光検出素子及び半導体光検出素子の製造方法
JP5261304B2 (ja) * 2009-07-13 2013-08-14 浜松ホトニクス株式会社 半導体光検出素子及び半導体光検出素子の製造方法
JP5363222B2 (ja) * 2009-07-13 2013-12-11 浜松ホトニクス株式会社 半導体光検出素子及び半導体光検出素子の製造方法
DE102011081100A1 (de) * 2011-08-17 2013-02-21 Siemens Aktiengesellschaft Anordnung mit Photozellen
US8957358B2 (en) 2012-04-27 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
US8629524B2 (en) * 2012-04-27 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for vertically integrated backside illuminated image sensors
US9153565B2 (en) 2012-06-01 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensors with a high fill-factor
US10090349B2 (en) 2012-08-09 2018-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
US10297630B2 (en) * 2012-06-18 2019-05-21 Forza Silicon Corporation Pinned charge transimpedance amplifier
DE102012220416A1 (de) 2012-11-09 2014-05-15 Siemens Aktiengesellschaft Fotoempfänger mit einer Vielzahl von Fotozellen und Durchkontaktierungen sowie Verfahren zu dessen Herstellung
JP5682638B2 (ja) * 2013-01-15 2015-03-11 株式会社ニコン 撮像素子
JP6361633B2 (ja) * 2015-11-02 2018-07-25 株式会社ニコン 撮像素子
US10559619B2 (en) 2016-02-22 2020-02-11 Sony Corporation Imaging device and method of manufacturing imaging device
US10050783B2 (en) * 2016-05-31 2018-08-14 Eyl Inc. Quantum random pulse generator
JP7533533B2 (ja) * 2020-06-16 2024-08-14 株式会社ニコン 撮像素子
FR3120741B1 (fr) 2021-03-09 2023-12-08 St Microelectronics Alps Sas Dispositif photosensible comportant un circuit intégrateur par groupe d’au moins deux éléments photosensibles.

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730030B2 (ja) 1983-08-24 1995-04-05 日産化学工業株式会社 ピラゾールスルホニルウレア誘導体、その製法および該誘導体を含有する選択性除草剤
JPH077814B2 (ja) 1987-02-03 1995-01-30 松下電器産業株式会社 実装基板
US4843520A (en) 1987-02-03 1989-06-27 Matsushita Electric Industrial Co. Ltd. Electronic circuit module
JPS63205527A (ja) 1987-02-20 1988-08-25 Sanyo Electric Co Ltd 測光回路
JPS63298187A (ja) 1987-05-29 1988-12-05 Matsushita Electric Ind Co Ltd 放射線センサアレイ
JPH01239915A (ja) * 1988-03-22 1989-09-25 Nec Corp 半導体集積回路
JPH02271281A (ja) 1989-04-13 1990-11-06 Matsushita Electric Ind Co Ltd 検出器ユニット
JP2617798B2 (ja) * 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
JP2940726B2 (ja) 1991-07-02 1999-08-25 三洋電機株式会社 光半導体装置
JPH0629507A (ja) 1992-04-21 1994-02-04 Nec Corp 演算機能付きフォトダイオード
US5665959A (en) * 1995-01-13 1997-09-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration Solid-state image sensor with focal-plane digital photon-counting pixel array
US6144718A (en) 1997-11-26 2000-11-07 General Electric Company Flexible cable connection for detector module
US6552745B1 (en) * 1998-04-08 2003-04-22 Agilent Technologies, Inc. CMOS active pixel with memory for imaging sensors
JP3668926B2 (ja) * 1999-08-27 2005-07-06 株式会社ルネサステクノロジ 光インタコネクション受信モジュール
US6525415B2 (en) 1999-12-28 2003-02-25 Fuji Xerox Co., Ltd. Three-dimensional semiconductor integrated circuit apparatus and manufacturing method therefor
JP2001291877A (ja) 2000-04-05 2001-10-19 Hamamatsu Photonics Kk 固体撮像装置
US6476374B1 (en) 2000-04-25 2002-11-05 Innovative Technology Licensing, Llc Room temperature, low-light-level visible imager
US6483116B1 (en) 2000-04-25 2002-11-19 Innovative Technology Licensing, Llc High performance ultraviolet imager for operation at room temperature
JP3713418B2 (ja) 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
JP2002354195A (ja) * 2001-05-29 2002-12-06 Hamamatsu Photonics Kk 信号処理回路および固体撮像装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10453888B2 (en) 2017-03-30 2019-10-22 Canon Kabushiki Kaisha Semiconductor apparatus and equipment having laminated layers

Also Published As

Publication number Publication date
IL163454A (en) 2009-06-15
AU2003207058A1 (en) 2003-09-04
EP1473553B1 (en) 2017-12-13
WO2003069288A1 (en) 2003-08-21
EP1473553A4 (en) 2007-03-21
EP1473553A1 (en) 2004-11-03
CN1630810A (zh) 2005-06-22
CN100432641C (zh) 2008-11-12
US20060165294A1 (en) 2006-07-27
JP2003232679A (ja) 2003-08-22
US7336808B2 (en) 2008-02-26

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