CN100432641C - 光检测装置 - Google Patents

光检测装置 Download PDF

Info

Publication number
CN100432641C
CN100432641C CNB038036436A CN03803643A CN100432641C CN 100432641 C CN100432641 C CN 100432641C CN B038036436 A CNB038036436 A CN B038036436A CN 03803643 A CN03803643 A CN 03803643A CN 100432641 C CN100432641 C CN 100432641C
Authority
CN
China
Prior art keywords
aforementioned
substrate
capacitor
integrating circuit
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038036436A
Other languages
English (en)
Chinese (zh)
Other versions
CN1630810A (zh
Inventor
水野诚一郎
山中辰己
藤井义磨郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of CN1630810A publication Critical patent/CN1630810A/zh
Application granted granted Critical
Publication of CN100432641C publication Critical patent/CN100432641C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CNB038036436A 2002-02-12 2003-02-12 光检测装置 Expired - Fee Related CN100432641C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002034298A JP4012743B2 (ja) 2002-02-12 2002-02-12 光検出装置
JP034298/2002 2002-02-12

Publications (2)

Publication Number Publication Date
CN1630810A CN1630810A (zh) 2005-06-22
CN100432641C true CN100432641C (zh) 2008-11-12

Family

ID=27678025

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038036436A Expired - Fee Related CN100432641C (zh) 2002-02-12 2003-02-12 光检测装置

Country Status (7)

Country Link
US (1) US7336808B2 (enExample)
EP (1) EP1473553B1 (enExample)
JP (1) JP4012743B2 (enExample)
CN (1) CN100432641C (enExample)
AU (1) AU2003207058A1 (enExample)
IL (1) IL163454A (enExample)
WO (1) WO2003069288A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1554760B1 (en) * 2002-10-25 2009-08-19 Ipl Intellectual Property Licensing Limited Circuit substrate and method
US7170143B2 (en) 2003-10-20 2007-01-30 Hamamatsu Photonics K.K. Semiconductor photo-detection device and radiation apparatus
JP4589030B2 (ja) * 2004-05-10 2010-12-01 浜松ホトニクス株式会社 光検出装置
US20060045383A1 (en) * 2004-08-31 2006-03-02 Picciotto Carl E Displacement estimation system and method
TW201101476A (en) 2005-06-02 2011-01-01 Sony Corp Semiconductor image sensor module and method of manufacturing the same
WO2007013534A1 (en) * 2005-07-27 2007-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100798276B1 (ko) * 2006-08-23 2008-01-24 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
JP5085122B2 (ja) 2006-12-21 2012-11-28 浜松ホトニクス株式会社 半導体光検出素子及び放射線検出装置
KR100860466B1 (ko) * 2006-12-27 2008-09-25 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그 제조방법
JP2009158570A (ja) * 2007-12-25 2009-07-16 Seiko Instruments Inc 光検出半導体装置、光検出装置、及び画像表示装置
KR100856942B1 (ko) * 2008-01-07 2008-09-04 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP5256862B2 (ja) * 2008-06-06 2013-08-07 富士通株式会社 撮像デバイス
JP5185206B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185207B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5185208B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオード及びフォトダイオードアレイ
JP5185205B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP2010283223A (ja) * 2009-06-05 2010-12-16 Hamamatsu Photonics Kk 半導体光検出素子及び半導体光検出素子の製造方法
JP5363222B2 (ja) * 2009-07-13 2013-12-11 浜松ホトニクス株式会社 半導体光検出素子及び半導体光検出素子の製造方法
JP5261304B2 (ja) * 2009-07-13 2013-08-14 浜松ホトニクス株式会社 半導体光検出素子及び半導体光検出素子の製造方法
DE102011081100A1 (de) * 2011-08-17 2013-02-21 Siemens Aktiengesellschaft Anordnung mit Photozellen
US9153565B2 (en) 2012-06-01 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensors with a high fill-factor
US8957358B2 (en) 2012-04-27 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
US10090349B2 (en) 2012-08-09 2018-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
US8629524B2 (en) 2012-04-27 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for vertically integrated backside illuminated image sensors
US10297630B2 (en) * 2012-06-18 2019-05-21 Forza Silicon Corporation Pinned charge transimpedance amplifier
DE102012220416A1 (de) 2012-11-09 2014-05-15 Siemens Aktiengesellschaft Fotoempfänger mit einer Vielzahl von Fotozellen und Durchkontaktierungen sowie Verfahren zu dessen Herstellung
JP5682638B2 (ja) * 2013-01-15 2015-03-11 株式会社ニコン 撮像素子
JP6361633B2 (ja) * 2015-11-02 2018-07-25 株式会社ニコン 撮像素子
EP3422410A4 (en) 2016-02-22 2019-09-11 Sony Corporation IMAGING APPARATUS AND METHOD FOR PRODUCING AN IMAGING APPARATUS
US10050783B2 (en) * 2016-05-31 2018-08-14 Eyl Inc. Quantum random pulse generator
JP6779825B2 (ja) 2017-03-30 2020-11-04 キヤノン株式会社 半導体装置および機器
JP7533533B2 (ja) * 2020-06-16 2024-08-14 株式会社ニコン 撮像素子
FR3120741B1 (fr) * 2021-03-09 2023-12-08 St Microelectronics Alps Sas Dispositif photosensible comportant un circuit intégrateur par groupe d’au moins deux éléments photosensibles.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239915A (ja) * 1988-03-22 1989-09-25 Nec Corp 半導体集積回路
JP2001291877A (ja) * 2000-04-05 2001-10-19 Hamamatsu Photonics Kk 固体撮像装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730030B2 (ja) 1983-08-24 1995-04-05 日産化学工業株式会社 ピラゾールスルホニルウレア誘導体、その製法および該誘導体を含有する選択性除草剤
US4843520A (en) 1987-02-03 1989-06-27 Matsushita Electric Industrial Co. Ltd. Electronic circuit module
JPH077814B2 (ja) * 1987-02-03 1995-01-30 松下電器産業株式会社 実装基板
JPS63205527A (ja) * 1987-02-20 1988-08-25 Sanyo Electric Co Ltd 測光回路
JPS63298187A (ja) * 1987-05-29 1988-12-05 Matsushita Electric Ind Co Ltd 放射線センサアレイ
JPH02271281A (ja) 1989-04-13 1990-11-06 Matsushita Electric Ind Co Ltd 検出器ユニット
JP2617798B2 (ja) * 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
JP2940726B2 (ja) * 1991-07-02 1999-08-25 三洋電機株式会社 光半導体装置
JPH0629507A (ja) * 1992-04-21 1994-02-04 Nec Corp 演算機能付きフォトダイオード
US5665959A (en) * 1995-01-13 1997-09-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration Solid-state image sensor with focal-plane digital photon-counting pixel array
US6144718A (en) * 1997-11-26 2000-11-07 General Electric Company Flexible cable connection for detector module
US6552745B1 (en) * 1998-04-08 2003-04-22 Agilent Technologies, Inc. CMOS active pixel with memory for imaging sensors
JP3668926B2 (ja) * 1999-08-27 2005-07-06 株式会社ルネサステクノロジ 光インタコネクション受信モジュール
US6525415B2 (en) * 1999-12-28 2003-02-25 Fuji Xerox Co., Ltd. Three-dimensional semiconductor integrated circuit apparatus and manufacturing method therefor
US6483116B1 (en) * 2000-04-25 2002-11-19 Innovative Technology Licensing, Llc High performance ultraviolet imager for operation at room temperature
US6476374B1 (en) * 2000-04-25 2002-11-05 Innovative Technology Licensing, Llc Room temperature, low-light-level visible imager
JP3713418B2 (ja) 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
JP2002354195A (ja) 2001-05-29 2002-12-06 Hamamatsu Photonics Kk 信号処理回路および固体撮像装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239915A (ja) * 1988-03-22 1989-09-25 Nec Corp 半導体集積回路
JP2001291877A (ja) * 2000-04-05 2001-10-19 Hamamatsu Photonics Kk 固体撮像装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
intelligent image sensor chip with three dimensional structure. H.Kurino,K.W.Lee,T.nakamura,K.Sakuma,K.T.Park,N.Miyakawa,H.Shimazutsu,K.Y.Kim,K.Inamura,M.Koyanagi.electron device meeting, 1999.IEDM technicle digest.. 1999 *

Also Published As

Publication number Publication date
AU2003207058A1 (en) 2003-09-04
CN1630810A (zh) 2005-06-22
JP2003232679A (ja) 2003-08-22
EP1473553A1 (en) 2004-11-03
JP4012743B2 (ja) 2007-11-21
IL163454A (en) 2009-06-15
US7336808B2 (en) 2008-02-26
EP1473553A4 (en) 2007-03-21
WO2003069288A1 (en) 2003-08-21
US20060165294A1 (en) 2006-07-27
EP1473553B1 (en) 2017-12-13

Similar Documents

Publication Publication Date Title
CN100432641C (zh) 光检测装置
US10312275B2 (en) Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilities
KR101875221B1 (ko) 반도체 집적 회로, 전자 기기, 고체 촬상 장치, 촬상 장치
CN104885222B (zh) 半导体光检测器
CN100407433C (zh) 光检测装置
EP1564812A1 (en) Photo detection device
CN112088435B (zh) 背面入射型半导体光检测装置
US6642561B2 (en) Solid imaging device and method for manufacturing the same
EP1850387B1 (en) Solid-state image pickup device
EP3082164B1 (en) Radiation image sensor
JP4391079B2 (ja) 固体撮像装置及び放射線撮像装置
CN110970453B (zh) 摄像装置
JP7411916B2 (ja) 撮像装置
WO2022196155A1 (ja) 撮像装置及びその駆動方法
US20250287125A1 (en) Semiconductor structure and method of manufacturing the same
JP4951212B2 (ja) 撮像素子
US7701026B2 (en) Imaging device
CN116438659A (zh) 摄像装置
US20050279920A1 (en) Self-pixelating focal plane array with electronic output
JPH04239171A (ja) 半導体装置
WO2021131641A1 (ja) 測距イメージセンサ
JPH09213936A (ja) 電荷結合装置
JP2000150856A (ja) 固体撮像素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081112

Termination date: 20200212

CF01 Termination of patent right due to non-payment of annual fee