JP4009250B2 - Pmd構造を形成する方法 - Google Patents
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- JP4009250B2 JP4009250B2 JP2003522979A JP2003522979A JP4009250B2 JP 4009250 B2 JP4009250 B2 JP 4009250B2 JP 2003522979 A JP2003522979 A JP 2003522979A JP 2003522979 A JP2003522979 A JP 2003522979A JP 4009250 B2 JP4009250 B2 JP 4009250B2
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Description
Claims (5)
- 化学気相成長(CVD)反応チャンバ(200)を提供するステップ(320)と、
前記反応チャンバ内に、フィーチャ間に約3より大きいアスペクト比を有する少なくとも1つのギャップ(160)を形成するように間隔を置いて配置されたフィーチャ(170)を表面上に有する半導体ウェーハ(210)を提供するステップ(330)と、
炭素含有有機金属前駆物質(260)を提供するステップ(352)と、
オゾン含有ガス(270)を提供するステップ(356)と、
ドーパント含有ガス(280)を提供するステップ(254)と、
low−k(低誘電)率膜(170)を前記表面上に堆積させるために、前記前駆物質、前記オゾン含有ガス、および前記ドーパント含有ガスを反応させるステップ(370)と、
前記低誘電率膜(170)をリフローさせるステップとを含み、
前記ドーパント含有ガスは、アルカリ元素をゲッリングするリンと別のドーパントを含み、
前記リフローさせるステップが、前記低誘電率膜に前記別のドーパントを含ませることにより725℃より低い温度で20分間実施されることを特徴とし、
その結果、前記低誘電率膜(170)が前記少なくとも1つのギャップ(160)を実質的に充てんする、PMD構造を形成する方法。 - 前記低誘電率膜(170)が、3より小さな誘電率を有する、請求項1に記載の方法。
- 前記炭素含有前駆物質が、TMCTSおよびOMCTSからなる群から選択される、請求項1に記載の方法。
- 前記ドーパント含有ガス(280)を提供するステップ(254)が、TEBの流れ、およびTEPOの流れを含む、請求項1に記載の方法。
- 前記ドーパント含有ガス(280)がリンを含み、前記別のドーパントとしてホウ素、ゲルマニウム、ヒ素、フッ素、およびこれらの組合せからなる群から選択される第2のドーパントをさらに含む、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/928,209 US6531412B2 (en) | 2001-08-10 | 2001-08-10 | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications |
PCT/US2002/025507 WO2003019619A2 (en) | 2001-08-10 | 2002-08-08 | A low-k pre-metal dielectric semiconductor structure |
Publications (2)
Publication Number | Publication Date |
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JP2005501406A JP2005501406A (ja) | 2005-01-13 |
JP4009250B2 true JP4009250B2 (ja) | 2007-11-14 |
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Application Number | Title | Priority Date | Filing Date |
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JP2003522979A Expired - Fee Related JP4009250B2 (ja) | 2001-08-10 | 2002-08-08 | Pmd構造を形成する方法 |
Country Status (9)
Country | Link |
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US (2) | US6531412B2 (ja) |
JP (1) | JP4009250B2 (ja) |
KR (1) | KR100579017B1 (ja) |
CN (1) | CN1280875C (ja) |
AU (1) | AU2002323112A1 (ja) |
DE (1) | DE10236430A1 (ja) |
MY (1) | MY134065A (ja) |
TW (2) | TWI234200B (ja) |
WO (1) | WO2003019619A2 (ja) |
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- 2002-08-08 JP JP2003522979A patent/JP4009250B2/ja not_active Expired - Fee Related
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- 2002-08-08 TW TW091117892A patent/TWI234200B/zh not_active IP Right Cessation
- 2002-08-08 DE DE10236430A patent/DE10236430A1/de not_active Ceased
- 2002-08-08 TW TW093135711A patent/TWI234204B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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US6531412B2 (en) | 2003-03-11 |
US20030032306A1 (en) | 2003-02-13 |
TW200514163A (en) | 2005-04-16 |
US7084079B2 (en) | 2006-08-01 |
WO2003019619A3 (en) | 2003-10-16 |
CN1541403A (zh) | 2004-10-27 |
AU2002323112A1 (en) | 2003-03-10 |
KR100579017B1 (ko) | 2006-05-12 |
MY134065A (en) | 2007-11-30 |
JP2005501406A (ja) | 2005-01-13 |
DE10236430A1 (de) | 2003-02-27 |
WO2003019619A2 (en) | 2003-03-06 |
TWI234200B (en) | 2005-06-11 |
TWI234204B (en) | 2005-06-11 |
US20030068853A1 (en) | 2003-04-10 |
CN1280875C (zh) | 2006-10-18 |
KR20040019031A (ko) | 2004-03-04 |
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