JP3997494B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3997494B2
JP3997494B2 JP11465697A JP11465697A JP3997494B2 JP 3997494 B2 JP3997494 B2 JP 3997494B2 JP 11465697 A JP11465697 A JP 11465697A JP 11465697 A JP11465697 A JP 11465697A JP 3997494 B2 JP3997494 B2 JP 3997494B2
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JP
Japan
Prior art keywords
dielectric constant
film
insulating film
low dielectric
organic low
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP11465697A
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English (en)
Japanese (ja)
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JPH10150105A5 (enExample
JPH10150105A (ja
Inventor
利昭 長谷川
正永 深沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Priority to JP11465697A priority Critical patent/JP3997494B2/ja
Publication of JPH10150105A publication Critical patent/JPH10150105A/ja
Publication of JPH10150105A5 publication Critical patent/JPH10150105A5/ja
Application granted granted Critical
Publication of JP3997494B2 publication Critical patent/JP3997494B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP11465697A 1996-09-17 1997-05-02 半導体装置 Expired - Fee Related JP3997494B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11465697A JP3997494B2 (ja) 1996-09-17 1997-05-02 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-244375 1996-09-17
JP24437596 1996-09-17
JP11465697A JP3997494B2 (ja) 1996-09-17 1997-05-02 半導体装置

Publications (3)

Publication Number Publication Date
JPH10150105A JPH10150105A (ja) 1998-06-02
JPH10150105A5 JPH10150105A5 (enExample) 2005-11-04
JP3997494B2 true JP3997494B2 (ja) 2007-10-24

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ID=26453364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11465697A Expired - Fee Related JP3997494B2 (ja) 1996-09-17 1997-05-02 半導体装置

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JP (1) JP3997494B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10804290B2 (en) 2016-09-21 2020-10-13 Toshiba Memory Corporation Semiconductor device and method of manufacturing the same

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3177968B2 (ja) * 1998-12-04 2001-06-18 日本電気株式会社 半導体装置及びその製造方法
US6265780B1 (en) * 1998-12-01 2001-07-24 United Microelectronics Corp. Dual damascene structure for the wiring-line structures of multi-level interconnects in integrated circuit
TW437040B (en) * 1998-08-12 2001-05-28 Applied Materials Inc Interconnect line formed by dual damascene using dielectric layers having dissimilar etching characteristics
US6297163B1 (en) * 1998-09-30 2001-10-02 Lam Research Corporation Method of plasma etching dielectric materials
JP2000133710A (ja) 1998-10-26 2000-05-12 Tokyo Electron Ltd 半導体装置及びその製造方法
JP2000174123A (ja) 1998-12-09 2000-06-23 Nec Corp 半導体装置及びその製造方法
JP3353743B2 (ja) 1999-05-18 2002-12-03 日本電気株式会社 半導体装置とその製造方法
JP4173307B2 (ja) * 1999-06-24 2008-10-29 株式会社ルネサステクノロジ 半導体集積回路の製造方法
US6596623B1 (en) * 2000-03-17 2003-07-22 Advanced Micro Devices, Inc. Use of organic spin on materials as a stop-layer for local interconnect, contact and via layers
JP3403373B2 (ja) 2000-05-26 2003-05-06 松下電器産業株式会社 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
JP3403374B2 (ja) 2000-05-26 2003-05-06 松下電器産業株式会社 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
JP3946471B2 (ja) 2001-07-24 2007-07-18 シャープ株式会社 半導体装置の製造方法
JP2003142579A (ja) 2001-11-07 2003-05-16 Hitachi Ltd 半導体装置の製造方法および半導体装置
JP4737361B2 (ja) * 2003-12-19 2011-07-27 Ｊｓｒ株式会社 絶縁膜およびその形成方法
US6974772B1 (en) * 2004-08-19 2005-12-13 Intel Corporation Integrated low-k hard mask
JP4762280B2 (ja) * 2008-08-06 2011-08-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10804290B2 (en) 2016-09-21 2020-10-13 Toshiba Memory Corporation Semiconductor device and method of manufacturing the same
US11502100B2 (en) 2016-09-21 2022-11-15 Kioxia Corporation Semiconductor device and method of manufacturing the same
US11849586B2 (en) 2016-09-21 2023-12-19 Kioxia Corporation Semiconductor device and method of manufacturing the same

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Publication number Publication date
JPH10150105A (ja) 1998-06-02

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