JPH10150105A5 - - Google Patents

Info

Publication number
JPH10150105A5
JPH10150105A5 JP1997114656A JP11465697A JPH10150105A5 JP H10150105 A5 JPH10150105 A5 JP H10150105A5 JP 1997114656 A JP1997114656 A JP 1997114656A JP 11465697 A JP11465697 A JP 11465697A JP H10150105 A5 JPH10150105 A5 JP H10150105A5
Authority
JP
Japan
Prior art keywords
insulating layer
semiconductor device
dielectric constant
organic low
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997114656A
Other languages
English (en)
Japanese (ja)
Other versions
JP3997494B2 (ja
JPH10150105A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11465697A priority Critical patent/JP3997494B2/ja
Priority claimed from JP11465697A external-priority patent/JP3997494B2/ja
Publication of JPH10150105A publication Critical patent/JPH10150105A/ja
Publication of JPH10150105A5 publication Critical patent/JPH10150105A5/ja
Application granted granted Critical
Publication of JP3997494B2 publication Critical patent/JP3997494B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP11465697A 1996-09-17 1997-05-02 半導体装置 Expired - Fee Related JP3997494B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11465697A JP3997494B2 (ja) 1996-09-17 1997-05-02 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-244375 1996-09-17
JP24437596 1996-09-17
JP11465697A JP3997494B2 (ja) 1996-09-17 1997-05-02 半導体装置

Publications (3)

Publication Number Publication Date
JPH10150105A JPH10150105A (ja) 1998-06-02
JPH10150105A5 true JPH10150105A5 (enExample) 2005-11-04
JP3997494B2 JP3997494B2 (ja) 2007-10-24

Family

ID=26453364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11465697A Expired - Fee Related JP3997494B2 (ja) 1996-09-17 1997-05-02 半導体装置

Country Status (1)

Country Link
JP (1) JP3997494B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3177968B2 (ja) * 1998-12-04 2001-06-18 日本電気株式会社 半導体装置及びその製造方法
US6265780B1 (en) * 1998-12-01 2001-07-24 United Microelectronics Corp. Dual damascene structure for the wiring-line structures of multi-level interconnects in integrated circuit
TW437040B (en) * 1998-08-12 2001-05-28 Applied Materials Inc Interconnect line formed by dual damascene using dielectric layers having dissimilar etching characteristics
US6297163B1 (en) * 1998-09-30 2001-10-02 Lam Research Corporation Method of plasma etching dielectric materials
JP2000133710A (ja) 1998-10-26 2000-05-12 Tokyo Electron Ltd 半導体装置及びその製造方法
JP2000174123A (ja) 1998-12-09 2000-06-23 Nec Corp 半導体装置及びその製造方法
JP3353743B2 (ja) 1999-05-18 2002-12-03 日本電気株式会社 半導体装置とその製造方法
JP4173307B2 (ja) * 1999-06-24 2008-10-29 株式会社ルネサステクノロジ 半導体集積回路の製造方法
US6596623B1 (en) * 2000-03-17 2003-07-22 Advanced Micro Devices, Inc. Use of organic spin on materials as a stop-layer for local interconnect, contact and via layers
JP3403373B2 (ja) 2000-05-26 2003-05-06 松下電器産業株式会社 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
JP3403374B2 (ja) 2000-05-26 2003-05-06 松下電器産業株式会社 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
JP3946471B2 (ja) 2001-07-24 2007-07-18 シャープ株式会社 半導体装置の製造方法
JP2003142579A (ja) 2001-11-07 2003-05-16 Hitachi Ltd 半導体装置の製造方法および半導体装置
JP4737361B2 (ja) * 2003-12-19 2011-07-27 Ｊｓｒ株式会社 絶縁膜およびその形成方法
US6974772B1 (en) * 2004-08-19 2005-12-13 Intel Corporation Integrated low-k hard mask
JP4762280B2 (ja) * 2008-08-06 2011-08-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN115942749A (zh) 2016-09-21 2023-04-07 铠侠股份有限公司 半导体装置

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