JP3969698B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP3969698B2
JP3969698B2 JP2001151572A JP2001151572A JP3969698B2 JP 3969698 B2 JP3969698 B2 JP 3969698B2 JP 2001151572 A JP2001151572 A JP 2001151572A JP 2001151572 A JP2001151572 A JP 2001151572A JP 3969698 B2 JP3969698 B2 JP 3969698B2
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JP
Japan
Prior art keywords
organic compound
light
emitting device
film
nozzle
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Expired - Fee Related
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JP2001151572A
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English (en)
Japanese (ja)
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JP2002343566A (ja
JP2002343566A5 (enExample
Inventor
舜平 山崎
哲史 瀬尾
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18996396&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3969698(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority to JP2001151572A priority Critical patent/JP3969698B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to TW091109010A priority patent/TW541727B/zh
Priority to US10/147,923 priority patent/US7179756B2/en
Priority to CNB021203024A priority patent/CN100452474C/zh
Publication of JP2002343566A publication Critical patent/JP2002343566A/ja
Publication of JP2002343566A5 publication Critical patent/JP2002343566A5/ja
Priority to US11/707,099 priority patent/US7485584B2/en
Publication of JP3969698B2 publication Critical patent/JP3969698B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114Poly-phenylenevinylene; Derivatives thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115Polyfluorene; Derivatives thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2001151572A 2001-05-21 2001-05-21 発光装置の作製方法 Expired - Fee Related JP3969698B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001151572A JP3969698B2 (ja) 2001-05-21 2001-05-21 発光装置の作製方法
TW091109010A TW541727B (en) 2001-05-21 2002-04-30 Light emitting device and method of manufacturing thereof
US10/147,923 US7179756B2 (en) 2001-05-21 2002-05-20 Light emitting device and method of manufacturing thereof
CNB021203024A CN100452474C (zh) 2001-05-21 2002-05-21 发光装置及其制造方法
US11/707,099 US7485584B2 (en) 2001-05-21 2007-02-16 Light emitting device and method of manufacturing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001151572A JP3969698B2 (ja) 2001-05-21 2001-05-21 発光装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002343566A JP2002343566A (ja) 2002-11-29
JP2002343566A5 JP2002343566A5 (enExample) 2005-09-08
JP3969698B2 true JP3969698B2 (ja) 2007-09-05

Family

ID=18996396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001151572A Expired - Fee Related JP3969698B2 (ja) 2001-05-21 2001-05-21 発光装置の作製方法

Country Status (4)

Country Link
US (2) US7179756B2 (enExample)
JP (1) JP3969698B2 (enExample)
CN (1) CN100452474C (enExample)
TW (1) TW541727B (enExample)

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* Cited by examiner, † Cited by third party
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JP3969698B2 (ja) * 2001-05-21 2007-09-05 株式会社半導体エネルギー研究所 発光装置の作製方法
US7199515B2 (en) * 2001-06-01 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and light emitting device using the element
US20020197393A1 (en) * 2001-06-08 2002-12-26 Hideaki Kuwabara Process of manufacturing luminescent device
US7112113B2 (en) * 2002-12-25 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of display device
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JP5416987B2 (ja) 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
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JP5238544B2 (ja) 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US8409672B2 (en) * 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
KR101084277B1 (ko) * 2010-02-03 2011-11-16 삼성모바일디스플레이주식회사 유기 발광 표시장치 및 그 제조방법
JP6717191B2 (ja) * 2014-04-18 2020-07-01 株式会社ニコン 成膜装置、基板処理装置、および、デバイス製造方法

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Also Published As

Publication number Publication date
CN1386587A (zh) 2002-12-25
US20020187567A1 (en) 2002-12-12
US7485584B2 (en) 2009-02-03
US7179756B2 (en) 2007-02-20
CN100452474C (zh) 2009-01-14
JP2002343566A (ja) 2002-11-29
TW541727B (en) 2003-07-11
US20070275490A1 (en) 2007-11-29

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