TW541727B - Light emitting device and method of manufacturing thereof - Google Patents
Light emitting device and method of manufacturing thereof Download PDFInfo
- Publication number
- TW541727B TW541727B TW091109010A TW91109010A TW541727B TW 541727 B TW541727 B TW 541727B TW 091109010 A TW091109010 A TW 091109010A TW 91109010 A TW91109010 A TW 91109010A TW 541727 B TW541727 B TW 541727B
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- Prior art keywords
- patent application
- organic compound
- liquid
- item
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
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- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 238000004020 luminiscence type Methods 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001151572A JP3969698B2 (ja) | 2001-05-21 | 2001-05-21 | 発光装置の作製方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW541727B true TW541727B (en) | 2003-07-11 |
Family
ID=18996396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091109010A TW541727B (en) | 2001-05-21 | 2002-04-30 | Light emitting device and method of manufacturing thereof |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7179756B2 (enExample) |
| JP (1) | JP3969698B2 (enExample) |
| CN (1) | CN100452474C (enExample) |
| TW (1) | TW541727B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3969698B2 (ja) * | 2001-05-21 | 2007-09-05 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| US7199515B2 (en) * | 2001-06-01 | 2007-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting element and light emitting device using the element |
| US20020197393A1 (en) * | 2001-06-08 | 2002-12-26 | Hideaki Kuwabara | Process of manufacturing luminescent device |
| US7112113B2 (en) * | 2002-12-25 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of display device |
| WO2004064453A1 (ja) * | 2003-01-10 | 2004-07-29 | Semiconductor Energy Laboratory Co., Ltd. | 発光素子及びその作製方法 |
| US7211461B2 (en) * | 2003-02-14 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| JP4799176B2 (ja) * | 2003-07-24 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| KR100656497B1 (ko) * | 2004-02-09 | 2006-12-11 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
| US7749037B2 (en) * | 2004-02-19 | 2010-07-06 | E. I. Du Pont De Nemours And Company | Process for fabricating an organic electronic device using liquid deposition and devices made by the process |
| JP4792724B2 (ja) * | 2004-09-29 | 2011-10-12 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子、表示装置及び照明装置 |
| US9734901B2 (en) * | 2004-10-29 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device with semiconductor memory cell |
| US8986780B2 (en) * | 2004-11-19 | 2015-03-24 | Massachusetts Institute Of Technology | Method and apparatus for depositing LED organic film |
| JP2008104894A (ja) * | 2005-02-14 | 2008-05-08 | Pioneer Electronic Corp | 塗布物被塗布材の製造方法および製造装置、表面マスク |
| JPWO2006085456A1 (ja) * | 2005-02-14 | 2008-08-07 | パイオニア株式会社 | 塗布物被塗布材の製造方法および製造装置 |
| JP5079215B2 (ja) * | 2005-03-04 | 2012-11-21 | パイオニア株式会社 | 塗布液被塗布材の製造方法 |
| JP5134193B2 (ja) * | 2005-07-15 | 2013-01-30 | 株式会社東芝 | 半導体装置及びその製造方法 |
| KR101097927B1 (ko) * | 2005-08-18 | 2011-12-23 | 재단법인서울대학교산학협력재단 | 액정 표시장치 제조 방법 |
| US7432187B1 (en) * | 2007-05-14 | 2008-10-07 | Eastman Kodak Company | Method for improving current distribution of a transparent electrode |
| US20090042122A1 (en) * | 2007-08-08 | 2009-02-12 | Katun Corporation | Methods of producing toner compositions and toner compositions produced therefrom |
| WO2009063954A1 (ja) * | 2007-11-16 | 2009-05-22 | Ulvac, Inc. | 基板処理方法及びこの方法によって処理された基板 |
| US20090218219A1 (en) * | 2008-02-29 | 2009-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Apparatus |
| JP5416987B2 (ja) | 2008-02-29 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
| JP5238544B2 (ja) | 2008-03-07 | 2013-07-17 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
| US8409672B2 (en) * | 2008-04-24 | 2013-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device |
| KR101084277B1 (ko) * | 2010-02-03 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 유기 발광 표시장치 및 그 제조방법 |
| CN106232867B (zh) * | 2014-04-18 | 2019-01-08 | 株式会社尼康 | 膜形成设备、基板处理设备和装置制造方法 |
Family Cites Families (82)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4617195A (en) | 1984-03-26 | 1986-10-14 | Microlite, Inc. | Shielded electroluminescent lamp |
| JPH0682796A (ja) | 1992-09-02 | 1994-03-25 | Fujitsu Ltd | 微細粒状スペーサの散布方法 |
| US5543177A (en) * | 1992-11-05 | 1996-08-06 | Xerox Corporation | Marking materials containing retroreflecting fillers |
| US5405724A (en) | 1993-03-08 | 1995-04-11 | Xerox Corporation | Photoconductive imaging members and processes thereof comprising solubilized pigment-lewis acid complexes |
| US5698740A (en) | 1993-10-01 | 1997-12-16 | Toyo Ink Manufacturing Co., Ltd. | Hole-transport material |
| JP3463362B2 (ja) | 1993-12-28 | 2003-11-05 | カシオ計算機株式会社 | 電界発光素子の製造方法および電界発光素子 |
| US5650197A (en) | 1994-03-11 | 1997-07-22 | Jet Process Corporation | Jet vapor deposition of organic molecule guest-inorganic host thin films |
| US5585213A (en) | 1994-06-10 | 1996-12-17 | Toyo Ink Manufacturing Co., Ltd. | Hole-transporting material and its use |
| US5703436A (en) | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| TW334474B (en) | 1995-02-01 | 1998-06-21 | Sumitomo Kagaku Kk | Method for making a polymeric fluorescent substrate and organic electrolumninescent element |
| US5843527A (en) * | 1995-06-15 | 1998-12-01 | Dainippon Screen Mfg. Co., Ltd. | Coating solution applying method and apparatus |
| US5968675A (en) | 1995-12-11 | 1999-10-19 | Toyo Ink Manufacturing Co., Ltd. | Hole-transporting material and use thereof |
| JP3672125B2 (ja) | 1996-01-26 | 2005-07-13 | ソニー株式会社 | 光学的素子の製造方法 |
| JP3113212B2 (ja) | 1996-05-09 | 2000-11-27 | 富士通株式会社 | プラズマディスプレイパネルの蛍光体層形成装置および蛍光体塗布方法 |
| EP0842592B1 (en) | 1996-05-28 | 2001-10-10 | Koninklijke Philips Electronics N.V. | Organic electroluminescent device |
| JP2000512795A (ja) | 1996-06-12 | 2000-09-26 | ザ トラスティーズ オブ プリンストン ユニバーシテイ | 導電層のプラズマ処理 |
| US6207301B1 (en) | 1996-08-21 | 2001-03-27 | Sumitomo Chemical Company, Limited | Polymer fluorescent substance and organic electroluminescence device |
| US5948552A (en) | 1996-08-27 | 1999-09-07 | Hewlett-Packard Company | Heat-resistant organic electroluminescent device |
| JP3899566B2 (ja) | 1996-11-25 | 2007-03-28 | セイコーエプソン株式会社 | 有機el表示装置の製造方法 |
| US6013982A (en) | 1996-12-23 | 2000-01-11 | The Trustees Of Princeton University | Multicolor display devices |
| US5851274A (en) | 1997-01-13 | 1998-12-22 | Xerox Corporation | Ink jet ink compositions and processes for high resolution and high speed printing |
| US6312837B1 (en) | 1997-01-16 | 2001-11-06 | Sony Corporation | Optical element and method of manufacturing the same |
| JP3162313B2 (ja) | 1997-01-20 | 2001-04-25 | 工業技術院長 | 薄膜製造方法および薄膜製造装置 |
| JPH10270169A (ja) | 1997-01-21 | 1998-10-09 | Agency Of Ind Science & Technol | 固体光機能素子およびその製造方法 |
| US6049167A (en) | 1997-02-17 | 2000-04-11 | Tdk Corporation | Organic electroluminescent display device, and method and system for making the same |
| US6168731B1 (en) | 1997-02-24 | 2001-01-02 | Superior Micropowders Llc | Cathodoluminescent phosphor powders, methods for making phosphor powders and devices incorporating same |
| US5891587A (en) | 1997-02-27 | 1999-04-06 | Xerox Corporation | Electroluminescent devices |
| US6066712A (en) | 1997-05-09 | 2000-05-23 | Minolta Co., Ltd. | Styryl polymer, production method and use thereof |
| JP3793328B2 (ja) * | 1997-07-09 | 2006-07-05 | 富士写真フイルム株式会社 | ハロゲン化銀カラー写真感光材料 |
| US6843937B1 (en) | 1997-07-16 | 2005-01-18 | Seiko Epson Corporation | Composition for an organic EL element and method of manufacturing the organic EL element |
| JP3941169B2 (ja) | 1997-07-16 | 2007-07-04 | セイコーエプソン株式会社 | 有機el素子の製造方法 |
| JPH1185059A (ja) | 1997-09-05 | 1999-03-30 | Casio Comput Co Ltd | 表示素子、表示素子の製造方法及び表示素子の駆動方法 |
| EP1027723B1 (en) | 1997-10-14 | 2009-06-17 | Patterning Technologies Limited | Method of forming an electric capacitor |
| KR20010040487A (ko) * | 1998-02-02 | 2001-05-15 | 유니액스 코포레이션 | X-y 번지지정 가능한 전기 마이크로스위치 어레이 및이를 사용한 센서 매트릭스 |
| US6171765B1 (en) | 1998-05-26 | 2001-01-09 | Agilent Technologies, Inc. | Photolithographic processing for polymer LEDs with reactive metal cathodes |
| US6214631B1 (en) | 1998-10-30 | 2001-04-10 | The Trustees Of Princeton University | Method for patterning light emitting devices incorporating a movable mask |
| US6274887B1 (en) | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
| JP2000208252A (ja) | 1999-01-14 | 2000-07-28 | Tdk Corp | 有機el素子 |
| US6114088A (en) | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
| WO2000041893A1 (en) | 1999-01-15 | 2000-07-20 | 3M Innovative Properties Company | Thermal transfer element and process for forming organic electroluminescent devices |
| US6306559B1 (en) | 1999-01-26 | 2001-10-23 | Mitsubishi Chemical Corporation | Organic electroluminescent device comprising a patterned photosensitive composition and a method for producing same |
| US6281552B1 (en) | 1999-03-23 | 2001-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having ldd regions |
| JP4801238B2 (ja) | 1999-03-23 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2000059267A1 (en) | 1999-03-29 | 2000-10-05 | Seiko Epson Corporation | Composition, method for preparing film, and functional element and method for preparing the same |
| US6197365B1 (en) | 1999-03-30 | 2001-03-06 | Xcellsis Gmbh | Process for manufacturing a catalytic material |
| JP3865996B2 (ja) | 1999-04-07 | 2007-01-10 | 富士フイルムホールディングス株式会社 | 特定のシラン化合物及びそれらからなる発光素子材料、及び、それを含有する発光素子。 |
| JP3595190B2 (ja) * | 1999-04-16 | 2004-12-02 | 株式会社日立製作所 | 半導体の製造方法及び半導体製造装置 |
| US7288420B1 (en) | 1999-06-04 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
| TW512543B (en) | 1999-06-28 | 2002-12-01 | Semiconductor Energy Lab | Method of manufacturing an electro-optical device |
| US6174613B1 (en) | 1999-07-29 | 2001-01-16 | Agilent Technologies, Inc. | Method and apparatus for fabricating polymer-based electroluminescent displays |
| TWI263636B (en) | 1999-09-16 | 2006-10-11 | Ciba Sc Holding Ag | Fluorescent maleimides and use thereof |
| JP2001093673A (ja) | 1999-09-27 | 2001-04-06 | Sharp Corp | 有機エレクトロルミネッセンス素子 |
| TW480722B (en) | 1999-10-12 | 2002-03-21 | Semiconductor Energy Lab | Manufacturing method of electro-optical device |
| JP4477726B2 (ja) * | 1999-12-09 | 2010-06-09 | シャープ株式会社 | 有機led素子の製造方法 |
| US6228555B1 (en) | 1999-12-28 | 2001-05-08 | 3M Innovative Properties Company | Thermal mass transfer donor element |
| US6284425B1 (en) | 1999-12-28 | 2001-09-04 | 3M Innovative Properties | Thermal transfer donor element having a heat management underlayer |
| TW495808B (en) * | 2000-02-04 | 2002-07-21 | Semiconductor Energy Lab | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus |
| JP2001230075A (ja) | 2000-02-15 | 2001-08-24 | Nippon Hoso Kyokai <Nhk> | 有機elディスプレイの製造方法と製造装置 |
| TW495809B (en) | 2000-02-28 | 2002-07-21 | Semiconductor Energy Lab | Thin film forming device, thin film forming method, and self-light emitting device |
| TW495812B (en) | 2000-03-06 | 2002-07-21 | Semiconductor Energy Lab | Thin film forming device, method of forming a thin film, and self-light-emitting device |
| JP2001326178A (ja) | 2000-03-08 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| US7098084B2 (en) | 2000-03-08 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US6634806B2 (en) * | 2000-03-13 | 2003-10-21 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
| GB2360489A (en) | 2000-03-23 | 2001-09-26 | Seiko Epson Corp | Deposition of soluble materials |
| JP2001297876A (ja) | 2000-04-12 | 2001-10-26 | Tokki Corp | 有機el表示素子の製造方法および製造装置 |
| TW521237B (en) * | 2000-04-18 | 2003-02-21 | Semiconductor Energy Lab | Light emitting device |
| US6242152B1 (en) | 2000-05-03 | 2001-06-05 | 3M Innovative Properties | Thermal transfer of crosslinked materials from a donor to a receptor |
| TWI286338B (en) * | 2000-05-12 | 2007-09-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| JP2001353454A (ja) | 2000-06-14 | 2001-12-25 | Casio Comput Co Ltd | 成膜方法、有機el素子の製造方法及び成膜装置 |
| JP2002039990A (ja) * | 2000-07-21 | 2002-02-06 | Fuji Photo Film Co Ltd | イオン選択性電極およびその製造方法 |
| JP3541294B2 (ja) | 2000-09-01 | 2004-07-07 | 独立行政法人 科学技術振興機構 | 有機エレクトロルミネッセンス薄膜の作製方法と作製装置 |
| JP2002083691A (ja) * | 2000-09-06 | 2002-03-22 | Sharp Corp | アクティブマトリックス駆動型有機led表示装置及びその製造方法 |
| JP4630505B2 (ja) * | 2000-09-19 | 2011-02-09 | キヤノン株式会社 | 画像処理装置および情報処理装置およびデータ処理方法および情報処理方法および記憶媒体およびプログラム |
| JP4984343B2 (ja) | 2000-09-29 | 2012-07-25 | 株式会社日立製作所 | 有機電界発光素子及びそれを用いた光電子素子 |
| US6616762B2 (en) * | 2000-10-13 | 2003-09-09 | Tokyo Electron Limited | Treatment solution supply apparatus and treatment solution supply method |
| SG143942A1 (en) | 2001-02-19 | 2008-07-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| JP3969698B2 (ja) | 2001-05-21 | 2007-09-05 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| US7199515B2 (en) | 2001-06-01 | 2007-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting element and light emitting device using the element |
| US20020197393A1 (en) | 2001-06-08 | 2002-12-26 | Hideaki Kuwabara | Process of manufacturing luminescent device |
| JP2003022892A (ja) | 2001-07-06 | 2003-01-24 | Semiconductor Energy Lab Co Ltd | 発光装置の製造方法 |
| US6524884B1 (en) * | 2001-08-22 | 2003-02-25 | Korea Electronics And Telecommunications Research Institute | Method for fabricating an organic electroluminescene device having organic field effect transistor and organic eloectroluminescence diode |
| US6822256B2 (en) * | 2001-09-18 | 2004-11-23 | Intel Corporation | Forming organic light emitting device displays |
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2001
- 2001-05-21 JP JP2001151572A patent/JP3969698B2/ja not_active Expired - Fee Related
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2002
- 2002-04-30 TW TW091109010A patent/TW541727B/zh not_active IP Right Cessation
- 2002-05-20 US US10/147,923 patent/US7179756B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
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| US20020187567A1 (en) | 2002-12-12 |
| JP2002343566A (ja) | 2002-11-29 |
| CN100452474C (zh) | 2009-01-14 |
| US7179756B2 (en) | 2007-02-20 |
| CN1386587A (zh) | 2002-12-25 |
| US20070275490A1 (en) | 2007-11-29 |
| JP3969698B2 (ja) | 2007-09-05 |
| US7485584B2 (en) | 2009-02-03 |
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