JP3961680B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP3961680B2
JP3961680B2 JP19812398A JP19812398A JP3961680B2 JP 3961680 B2 JP3961680 B2 JP 3961680B2 JP 19812398 A JP19812398 A JP 19812398A JP 19812398 A JP19812398 A JP 19812398A JP 3961680 B2 JP3961680 B2 JP 3961680B2
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Japan
Prior art keywords
bit line
transistor
cell
sub
semiconductor memory
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Expired - Fee Related
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JP19812398A
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Japanese (ja)
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JP2000022010A (ja
JP2000022010A5 (enExample
Inventor
大三郎 高島
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Toshiba Corp
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Toshiba Corp
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Priority to JP19812398A priority Critical patent/JP3961680B2/ja
Priority to US09/343,510 priority patent/US6151242A/en
Publication of JP2000022010A publication Critical patent/JP2000022010A/ja
Publication of JP2000022010A5 publication Critical patent/JP2000022010A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
JP19812398A 1998-06-30 1998-06-30 半導体記憶装置 Expired - Fee Related JP3961680B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP19812398A JP3961680B2 (ja) 1998-06-30 1998-06-30 半導体記憶装置
US09/343,510 US6151242A (en) 1998-06-30 1999-06-30 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19812398A JP3961680B2 (ja) 1998-06-30 1998-06-30 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2000022010A JP2000022010A (ja) 2000-01-21
JP2000022010A5 JP2000022010A5 (enExample) 2004-08-19
JP3961680B2 true JP3961680B2 (ja) 2007-08-22

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JP19812398A Expired - Fee Related JP3961680B2 (ja) 1998-06-30 1998-06-30 半導体記憶装置

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US (1) US6151242A (enExample)
JP (1) JP3961680B2 (enExample)

Families Citing this family (58)

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JP3971536B2 (ja) * 1999-09-14 2007-09-05 松下電器産業株式会社 強誘電体メモリ装置
KR100317241B1 (ko) * 1999-11-16 2001-12-24 윤종용 강유전체 커패시터 및 그 제조 방법
JP3916837B2 (ja) * 2000-03-10 2007-05-23 株式会社東芝 強誘電体メモリ
US6449184B2 (en) 2000-06-19 2002-09-10 Matsushita Electric Industrial Co., Ltd. Method for driving semiconductor memory
CN1229867C (zh) * 2000-07-13 2005-11-30 松下电器产业株式会社 半导体存储装置的驱动方法
CN1225024C (zh) * 2000-07-25 2005-10-26 松下电器产业株式会社 半导体存储装置及其驱动方法
US7030435B2 (en) * 2000-08-24 2006-04-18 Cova Technologies, Inc. Single transistor rare earth manganite ferroelectric nonvolatile memory cell
JP2004526268A (ja) * 2000-09-25 2004-08-26 シメトリックス・コーポレーション 強誘電体メモリおよびその動作方法
WO2002071477A1 (en) 2001-03-02 2002-09-12 Cova Technologies Incorporated Single transistor rare earth manganite ferroelectric nonvolatile memory cell
JP4329919B2 (ja) * 2001-03-13 2009-09-09 Ｏｋｉセミコンダクタ株式会社 半導体メモリおよび半導体メモリの駆動方法
US20030048656A1 (en) * 2001-08-28 2003-03-13 Leonard Forbes Four terminal memory cell, a two-transistor sram cell, a sram array, a computer system, a process for forming a sram cell, a process for turning a sram cell off, a process for writing a sram cell and a process for reading data from a sram cell
KR100451762B1 (ko) * 2001-11-05 2004-10-08 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그 구동방법
KR100459214B1 (ko) * 2001-12-05 2004-12-03 주식회사 하이닉스반도체 불휘발성 강유전체 메모리장치 및 그의 메인 비트라인로드 컨트롤부의 구동방법
KR100487417B1 (ko) * 2001-12-13 2005-05-03 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그를 이용한멀티플-비트 데이타의 라이트 및 리드 방법
JP2003281883A (ja) * 2002-03-26 2003-10-03 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその駆動方法
US6867997B2 (en) 2002-03-27 2005-03-15 Texas Instruments Incorporated Series feram cell array
US6855565B2 (en) 2002-06-25 2005-02-15 Kabushiki Kaisha Toshiba Semiconductor device having ferroelectric film and manufacturing method thereof
US6825517B2 (en) 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
JP3773476B2 (ja) * 2002-09-09 2006-05-10 沖電気工業株式会社 半導体メモリおよびその書き込み方法、読み出し方法
JP4154967B2 (ja) * 2002-09-13 2008-09-24 松下電器産業株式会社 半導体記憶装置および駆動方法
US6714435B1 (en) 2002-09-19 2004-03-30 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6888736B2 (en) 2002-09-19 2005-05-03 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
KR100506059B1 (ko) * 2002-12-09 2005-08-05 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치
KR100527529B1 (ko) * 2002-12-13 2005-11-09 주식회사 하이닉스반도체 입출력 대역폭을 조절할 수 있는 메모리 장치
KR100492774B1 (ko) * 2002-12-24 2005-06-07 주식회사 하이닉스반도체 라이트 보호 영역을 구비한 비휘발성 메모리 장치
JP4172278B2 (ja) * 2003-01-27 2008-10-29 ソニー株式会社 半導体記憶装置
US6822891B1 (en) * 2003-06-16 2004-11-23 Kabushiki Kaisha Toshiba Ferroelectric memory device
KR100622757B1 (ko) * 2003-07-30 2006-09-13 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치
US7269048B2 (en) 2003-09-22 2007-09-11 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device
JP4672702B2 (ja) * 2003-09-22 2011-04-20 株式会社東芝 半導体集積回路装置
JP4074279B2 (ja) * 2003-09-22 2008-04-09 株式会社東芝 半導体集積回路装置、デジタルカメラ、デジタルビデオカメラ、コンピュータシステム、携帯コンピュータシステム、論理可変ｌｓｉ装置、ｉｃカード、ナビゲーションシステム、ロボット、画像表示装置、光ディスク記憶装置
JP3940728B2 (ja) * 2004-04-09 2007-07-04 株式会社東芝 半導体記憶装置
JP3940730B2 (ja) * 2004-04-16 2007-07-04 株式会社東芝 半導体記憶装置
JP2006031795A (ja) * 2004-07-14 2006-02-02 Renesas Technology Corp 不揮発性半導体記憶装置
JP2006302436A (ja) * 2005-04-22 2006-11-02 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2006338370A (ja) 2005-06-02 2006-12-14 Toshiba Corp メモリシステム
JP2007018600A (ja) 2005-07-07 2007-01-25 Toshiba Corp 半導体記憶装置
JP2007066448A (ja) 2005-08-31 2007-03-15 Toshiba Corp 強誘電体半導体記憶装置
JP4745108B2 (ja) 2006-04-06 2011-08-10 株式会社東芝 不揮発性半導体記憶装置
JP4982120B2 (ja) * 2006-07-04 2012-07-25 株式会社東芝 強誘電体メモリの試験方法及び強誘電体メモリ
JP2008102982A (ja) * 2006-10-17 2008-05-01 Toshiba Corp 強誘電体メモリ
JP2008108355A (ja) * 2006-10-25 2008-05-08 Toshiba Corp 強誘電体半導体記憶装置及び強誘電体半導体記憶装置の読み出し方法
JP4491000B2 (ja) 2007-08-17 2010-06-30 株式会社東芝 メモリシステム
US7652909B2 (en) * 2007-10-21 2010-01-26 Ramtron International Corporation 2T/2C ferroelectric random access memory with complementary bit-line loads
JP4660564B2 (ja) 2008-03-11 2011-03-30 株式会社東芝 半導体記憶装置
JP2010009687A (ja) * 2008-06-27 2010-01-14 Toshiba Corp 半導体記憶装置
JP5060413B2 (ja) 2008-07-15 2012-10-31 株式会社東芝 半導体記憶装置
JP5190326B2 (ja) * 2008-11-04 2013-04-24 株式会社東芝 強誘電体メモリ装置
US8295073B2 (en) * 2009-01-30 2012-10-23 Unity Semiconductor Corporation Non-volatile dual port third dimensional memory
US9941021B2 (en) 2016-06-16 2018-04-10 Micron Technology, Inc. Plate defect mitigation techniques
US10403389B2 (en) 2016-06-16 2019-09-03 Micron Technology, Inc. Array plate short repair
CN111129017B (zh) * 2019-12-26 2022-06-07 华虹半导体(无锡)有限公司 Otp存储器及其制造方法
US11250904B1 (en) * 2020-09-30 2022-02-15 Piecemakers Technology, Inc. DRAM with inter-section, page-data-copy scheme for low power and wide data access
US11755685B2 (en) * 2020-09-30 2023-09-12 Piecemakers Technology, Inc. Apparatus for data processing in conjunction with memory array access
US11688457B2 (en) * 2020-12-26 2023-06-27 International Business Machines Corporation Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computing
CN116935919A (zh) * 2022-03-31 2023-10-24 华为技术有限公司 一种铁电存储阵列、铁电存储器以及其操作方法

Family Cites Families (3)

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DE69413567T2 (de) * 1993-01-12 1999-06-02 Koninklijke Philips Electronics N.V., Eindhoven Prozessorsystem mit ferroelektrischem Speicher
JP3766181B2 (ja) * 1996-06-10 2006-04-12 株式会社東芝 半導体記憶装置とそれを搭載したシステム
US5966318A (en) * 1996-12-17 1999-10-12 Raytheon Company Nondestructive readout memory utilizing ferroelectric capacitors isolated from bitlines by buffer amplifiers

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JP2000022010A (ja) 2000-01-21
US6151242A (en) 2000-11-21

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