JP3944465B2 - 熱型赤外線検出器及び赤外線フォーカルプレーンアレイ - Google Patents

熱型赤外線検出器及び赤外線フォーカルプレーンアレイ Download PDF

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JP3944465B2
JP3944465B2 JP2003107677A JP2003107677A JP3944465B2 JP 3944465 B2 JP3944465 B2 JP 3944465B2 JP 2003107677 A JP2003107677 A JP 2003107677A JP 2003107677 A JP2003107677 A JP 2003107677A JP 3944465 B2 JP3944465 B2 JP 3944465B2
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temperature sensor
infrared
sacrificial layer
thermal
layer
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JP2004317152A5 (enExample
JP2004317152A (ja
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智広 石川
雅史 上野
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to US10/658,407 priority patent/US7005644B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023—Particular leg structure or construction or shape; Nanotubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2003107677A 2003-04-11 2003-04-11 熱型赤外線検出器及び赤外線フォーカルプレーンアレイ Expired - Lifetime JP3944465B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003107677A JP3944465B2 (ja) 2003-04-11 2003-04-11 熱型赤外線検出器及び赤外線フォーカルプレーンアレイ
US10/658,407 US7005644B2 (en) 2003-04-11 2003-09-10 Thermal infrared detector and infrared focal plane array

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JP2003107677A JP3944465B2 (ja) 2003-04-11 2003-04-11 熱型赤外線検出器及び赤外線フォーカルプレーンアレイ

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JP2004317152A JP2004317152A (ja) 2004-11-11
JP2004317152A5 JP2004317152A5 (enExample) 2005-07-21
JP3944465B2 true JP3944465B2 (ja) 2007-07-11

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JP (1) JP3944465B2 (enExample)

Cited By (4)

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Publication number Priority date Publication date Assignee Title
JP2017203737A (ja) * 2016-05-13 2017-11-16 三菱電機株式会社 熱型赤外線検出器および熱型赤外線検出器の製造方法
DE102017222480A1 (de) 2017-05-24 2018-11-29 Mitsubishi Electric Corporation Infrarotsensor und infrarothalbleiter-bildaufnahmevorrichtung
JP6440805B1 (ja) * 2017-11-16 2018-12-19 三菱電機株式会社 熱型赤外線検出器およびその製造方法
DE102019205925A1 (de) 2018-11-08 2020-05-14 Mitsubishi Electric Corporation Halbleitersensorvorrichtung und Verfahren zur Herstellung einer Halbleitersensorvorrichtung

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US6889568B2 (en) * 2002-01-24 2005-05-10 Sensarray Corporation Process condition sensing wafer and data analysis system
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US7192890B2 (en) * 2003-10-29 2007-03-20 Intel Corporation Depositing an oxide
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US8604361B2 (en) * 2005-12-13 2013-12-10 Kla-Tencor Corporation Component package for maintaining safe operating temperature of components
JP5283825B2 (ja) * 2006-01-25 2013-09-04 浜松ホトニクス株式会社 熱型赤外線検出器
EP2032956A2 (en) * 2006-05-23 2009-03-11 Regents Of The University Of Minnesota Tunable finesse infrared cavity thermal detectors
JP4703502B2 (ja) * 2006-07-05 2011-06-15 三菱電機株式会社 温度センサおよび赤外線固体撮像装置
JP2008051522A (ja) * 2006-08-22 2008-03-06 Nec Tokin Corp 熱型赤外線検出装置およびその製造方法
RU2339011C2 (ru) * 2006-12-08 2008-11-20 Общество с ограниченной ответственностью ООО "Юник Ай Сиз" Тепловой инфракрасный датчик со схемой считывания
EP2092285A4 (en) * 2006-12-08 2013-11-06 Univ Minnesota DETECTION BEYOND THE STANDARD LIMIT FOR RADIATION RISKS WITH REDUCED EMISSIVITY AND OPTICAL CAVITY COUPLING
JP4398972B2 (ja) * 2006-12-11 2010-01-13 株式会社東芝 電磁波センサ、撮像素子及び撮像装置
JP5597862B2 (ja) * 2007-03-27 2014-10-01 日本電気株式会社 ボロメータ型ＴＨｚ波検出器
JP2009085609A (ja) * 2007-09-27 2009-04-23 Oki Semiconductor Co Ltd 赤外線検出素子
JP5517411B2 (ja) * 2008-01-29 2014-06-11 三菱電機株式会社 赤外線センサ、及び赤外線固体撮像装置
JP5339747B2 (ja) * 2008-03-06 2013-11-13 三菱電機株式会社 赤外線固体撮像装置
JP5108566B2 (ja) * 2008-03-11 2012-12-26 ラピスセミコンダクタ株式会社 赤外線検出素子の製造方法
JP2009231643A (ja) * 2008-03-24 2009-10-08 Casio Comput Co Ltd 光感知素子及びフォトセンサ並びに表示装置
JP4697611B2 (ja) * 2008-03-28 2011-06-08 日本電気株式会社 熱型赤外線固体撮像素子及びその製造方法
US8629398B2 (en) 2008-05-30 2014-01-14 The Regents Of The University Of Minnesota Detection beyond the standard radiation noise limit using spectrally selective absorption
US20100078753A1 (en) * 2008-10-01 2010-04-01 Flowmems, Inc. Flow Sensor and Method of Fabrication
JP5428783B2 (ja) * 2009-11-12 2014-02-26 日本電気株式会社 ボロメータ型ＴＨｚ波検出器
JP5476114B2 (ja) * 2009-12-18 2014-04-23 東京エレクトロン株式会社 温度測定用装置
CN102116676A (zh) * 2009-12-30 2011-07-06 上海欧菲尔光电技术有限公司 红外焦平面探测器封装窗口金属化区的金属化方法
US8455829B2 (en) * 2010-01-26 2013-06-04 Northrop Grumman Systems Corporation Series diode electro-thermal circuit for ultra sensitive silicon sensor
JP5699561B2 (ja) 2010-01-27 2015-04-15 ソニー株式会社 撮像装置
EP2363887A1 (en) * 2010-03-02 2011-09-07 SensoNor Technologies AS Focal plane array and method for manufacturing the same
EP2363888A1 (en) * 2010-03-02 2011-09-07 SensoNor Technologies AS Focal plane array and method for manufacturing the same
JP5143176B2 (ja) * 2010-03-31 2013-02-13 株式会社東芝 赤外線撮像素子およびその製造方法
CN102386268B (zh) * 2010-08-30 2013-11-27 中国科学院微电子研究所 红外焦平面阵列器件及其制作方法
JP5364668B2 (ja) * 2010-09-22 2013-12-11 株式会社東芝 赤外線撮像装置
FR2966595B1 (fr) * 2010-10-26 2013-01-25 Commissariat Energie Atomique Dispositif de detection d'un rayonnement electromagnetique.
US8681493B2 (en) 2011-05-10 2014-03-25 Kla-Tencor Corporation Heat shield module for substrate-like metrology device
WO2012176362A1 (ja) * 2011-06-24 2012-12-27 日本電気株式会社 電磁波検出装置および電磁波検出装置の製造方法
TWI439679B (zh) * 2011-08-03 2014-06-01 Univ Nat Chiao Tung 電校式輻射計
JP2013093692A (ja) 2011-10-25 2013-05-16 Sony Corp 撮像装置、撮像方法
WO2013120652A1 (de) * 2012-02-16 2013-08-22 Heimann Sensor Gmbh Thermopile infrarot-sensorstruktur mit hohem füllgrad
DE102012203488A1 (de) * 2012-03-06 2013-09-12 Robert Bosch Gmbh Verfahren zum seriellen Auslesen von elektrischen Messelementen
CN103117287B (zh) * 2013-01-25 2015-09-16 四川大学 非制冷薄膜型红外焦平面阵列探测器结构及其制备方法
FR3009865B1 (fr) * 2013-08-22 2015-07-31 Commissariat Energie Atomique Detecteur bolometrique a bolometre de compensation a thermalisation renforcee
US9903763B2 (en) 2013-09-27 2018-02-27 Robert Bosch Gmbh Titanium nitride for MEMS bolometers
DE102013019560B4 (de) * 2013-11-22 2022-03-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bildgebender Strahlungssensor
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CN103913241B (zh) * 2014-04-29 2016-08-31 昆山光微电子有限公司 非制冷无基底光读出红外fpa探测器的温控结构和方法
EP2942609B1 (en) * 2014-05-07 2025-07-30 ams AG Bolometer and method for measurement of electromagnetic radiation
US20150338283A1 (en) * 2014-05-20 2015-11-26 Hon Hai Precision Industry Co., Ltd. Device and method for temperature monitoring in multiple areas using one sensor
WO2016046994A1 (en) * 2014-09-25 2016-03-31 Hamamatsu Photonics K.K. Thermal infrared image sensor
EP3215883A4 (en) * 2014-11-05 2018-07-11 Elenion Technologies, LLC Photonic integrated circuit incorporating a bandgap temperature sensor
US9513437B2 (en) 2014-11-05 2016-12-06 Coriant Advanced Technology, LLC Photonic integrated circuit incorporating a bandgap temperature sensor
CN106276776B (zh) * 2015-05-13 2019-03-15 无锡华润上华科技有限公司 Mems双层悬浮微结构的制作方法和mems红外探测器
US10128302B2 (en) 2016-01-28 2018-11-13 Ams Sensors Uk Limited IR detector array device
JP6812172B2 (ja) * 2016-08-30 2021-01-13 パイオニア株式会社 電磁波検出装置
WO2019159618A1 (ja) * 2018-02-14 2019-08-22 ソニーセミコンダクタソリューションズ株式会社 表示装置及び電子機器
FR3087260B1 (fr) * 2018-10-12 2020-09-25 Commissariat Energie Atomique Procede de fabrication d'un dispositif de detection d'un rayonnement electromagnetique comportant un element de detection suspendu
FR3087262A1 (fr) * 2018-10-12 2020-04-17 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de detection d'un rayonnement electromagnetique comportant une structure tridimensionnelle suspendue
FR3089005B1 (fr) * 2018-11-23 2020-10-30 Commissariat Energie Atomique détecteur thermique à membrane suspendue comportant un absorbeur déformable
CN110307905B (zh) * 2019-07-15 2021-03-30 电子科技大学 一种红外焦平面阵列及基于该红外焦平面阵列的红外热成像系统
FR3099248B1 (fr) * 2019-07-26 2021-08-06 Commissariat Energie Atomique Bolomètre à absorbeur en parapluie, composant comprenant un tel bolomètre et procédé de fabrication d’un tel bolomètre
JP2022090625A (ja) * 2020-12-07 2022-06-17 セイコーホールディングス株式会社 焦電センサ、焦電センサシステム及び焦電センサの製造方法
CN115172529B (zh) * 2022-08-01 2025-11-21 浙江珏芯微电子有限公司 制冷红外探测器及其制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286976A (en) 1988-11-07 1994-02-15 Honeywell Inc. Microstructure design for high IR sensitivity
US5196703A (en) 1991-09-27 1993-03-23 Texas Instruments Incorporated Readout system and process for IR detector arrays
JP4091979B2 (ja) 1995-12-04 2008-05-28 ロッキード マーティン アイアール イメージング システムズ インコーポレーテッド マイクロブリッジ検出器
JP3608858B2 (ja) 1995-12-18 2005-01-12 三菱電機株式会社 赤外線検出器及びその製造方法
JPH10185681A (ja) * 1996-11-08 1998-07-14 Mitsuteru Kimura 熱型赤外線センサとその製造方法およびこれを用いた赤外線イメージセンサ
DE19735379B4 (de) * 1997-08-14 2008-06-05 Perkinelmer Optoelectronics Gmbh Sensorsystem und Herstellungsverfahren
US6144030A (en) 1997-10-28 2000-11-07 Raytheon Company Advanced small pixel high fill factor uncooled focal plane array
JP3605285B2 (ja) * 1997-11-25 2004-12-22 三菱電機株式会社 熱型赤外線検出器アレイ
US6465784B1 (en) 1997-12-18 2002-10-15 Mitsubishi Denki Kabushiki Kaisha Infrared solid-state imaging sensing device
JP2000019010A (ja) * 1998-06-24 2000-01-21 Korea Advanced Inst Of Sci Technol ３層構造の赤外線ボロメータ
JP3484354B2 (ja) * 1998-09-14 2004-01-06 三菱電機株式会社 熱型赤外線検出器アレイおよびその製造方法
JP2000321125A (ja) 1999-05-13 2000-11-24 Mitsubishi Electric Corp 赤外線センサ素子
JP3514681B2 (ja) 1999-11-30 2004-03-31 三菱電機株式会社 赤外線検出器
FR2802338B1 (fr) * 1999-12-10 2002-01-18 Commissariat Energie Atomique Dispositif de detection de rayonnement electromagnetique
AU2001262915A1 (en) * 2000-02-24 2001-09-03 University Of Virginia Patent Foundation High sensitivity infrared sensing apparatus and related method thereof
US6690014B1 (en) * 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
JP2002107224A (ja) * 2000-09-29 2002-04-10 Toshiba Corp 赤外線センサ及びその製造方法
US6489615B2 (en) * 2000-12-15 2002-12-03 Northrop Grumman Corporation Ultra sensitive silicon sensor
US6667479B2 (en) * 2001-06-01 2003-12-23 Raytheon Company Advanced high speed, multi-level uncooled bolometer and method for fabricating same

Cited By (11)

* Cited by examiner, † Cited by third party
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JP2017203737A (ja) * 2016-05-13 2017-11-16 三菱電機株式会社 熱型赤外線検出器および熱型赤外線検出器の製造方法
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DE102017222480A1 (de) 2017-05-24 2018-11-29 Mitsubishi Electric Corporation Infrarotsensor und infrarothalbleiter-bildaufnahmevorrichtung
US10274374B2 (en) 2017-05-24 2019-04-30 Mitsubishi Electric Corporation Infrared sensor and infrared solid-state image pickup apparatus
JP6440805B1 (ja) * 2017-11-16 2018-12-19 三菱電機株式会社 熱型赤外線検出器およびその製造方法
DE102018208272A1 (de) 2017-11-16 2019-05-16 Mitsubishi Electric Corporation Thermischer infrarotdetektor und verfahren zur herstellung dessen
US10852193B2 (en) 2017-11-16 2020-12-01 Mitsubishi Electric Corporation Thermal infrared detector and manufacturing method thereof
DE102018208272B4 (de) 2017-11-16 2022-03-17 Mitsubishi Electric Corporation Thermischer infrarotdetektor und verfahren zur herstellung dessen
DE102019205925A1 (de) 2018-11-08 2020-05-14 Mitsubishi Electric Corporation Halbleitersensorvorrichtung und Verfahren zur Herstellung einer Halbleitersensorvorrichtung
US11404475B2 (en) 2018-11-08 2022-08-02 Mitsubishi Electric Corporation Semiconductor sensor device and semiconductor sensor device manufacturing method

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US20040200962A1 (en) 2004-10-14

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