JP5283825B2 - 熱型赤外線検出器 - Google Patents
熱型赤外線検出器 Download PDFInfo
- Publication number
- JP5283825B2 JP5283825B2 JP2006016733A JP2006016733A JP5283825B2 JP 5283825 B2 JP5283825 B2 JP 5283825B2 JP 2006016733 A JP2006016733 A JP 2006016733A JP 2006016733 A JP2006016733 A JP 2006016733A JP 5283825 B2 JP5283825 B2 JP 5283825B2
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- Prior art keywords
- layer
- infrared
- film
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- tin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 35
- 239000006096 absorbing agent Substances 0.000 claims description 27
- 239000002210 silicon-based material Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- 238000001039 wet etching Methods 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 119
- 239000010408 film Substances 0.000 description 52
- 238000010521 absorption reaction Methods 0.000 description 46
- 238000001514 detection method Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- -1 Si 3 N 4 Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/046—Materials; Selection of thermal materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Laminated Bodies (AREA)
Description
図1(a)は、本発明による赤外線吸収体を備える熱型赤外線検出器の第1実施形態を示す平面図である。また、図1(b)は、図1(a)に示すI−I線に沿った断面を示す側面断面図である。また、図1(c)は、図1(b)の一部を拡大した拡大断面図である。
図6(a)は、本発明による赤外線吸収体を備える熱型赤外線検出器の第2実施形態を示す平面図である。また、図6(b)は、図6(a)に示すII−II線に沿った断面を示す側面断面図である。また、図6(c)は、図6(b)の一部を拡大した拡大断面図である。
Claims (2)
- 赤外線吸収体と、
前記赤外線吸収体からの熱を電気的な量に変換する熱電変換部と
を備え、
前記赤外線吸収体が、
TiNを含む第1の層と、
Si系化合物を含み前記第1の層上に設けられた第2の層と
を有し、
前記第2の層が前記第1の層よりも厚く、
前記赤外線吸収体が、前記熱電変換部上に積層され、前記熱電変換部と共に、基板のウェットエッチング加工により形成されるメンブレン構造を構成しており、
前記第2の層側から入射する赤外線のエネルギを熱に変換することを特徴とする、熱型赤外線検出器。 - 前記第2の層が、前記Si系化合物としてSiCおよびSiNのうち少なくとも一方を含むことを特徴とする、請求項1に記載の熱型赤外線検出器。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006016733A JP5283825B2 (ja) | 2006-01-25 | 2006-01-25 | 熱型赤外線検出器 |
PCT/JP2007/051085 WO2007086424A1 (ja) | 2006-01-25 | 2007-01-24 | 赤外線吸収体および熱型赤外線検出器 |
CN200780003604XA CN101375140B (zh) | 2006-01-25 | 2007-01-24 | 红外线吸收体及热型红外线检测器 |
US12/161,868 US8664510B2 (en) | 2006-01-25 | 2007-01-24 | Infrared absorber and thermal infrared detector |
EP07707332.8A EP1978339B1 (en) | 2006-01-25 | 2007-01-24 | Infrared absorber and thermal infrared detector |
KR1020087018861A KR101427431B1 (ko) | 2006-01-25 | 2007-01-24 | 적외선 흡수체 및 열형 적외선 검출기 |
TW096102894A TWI429886B (zh) | 2006-01-25 | 2007-01-25 | Infrared absorber and thermal infrared detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006016733A JP5283825B2 (ja) | 2006-01-25 | 2006-01-25 | 熱型赤外線検出器 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012056010A Division JP5456810B2 (ja) | 2012-03-13 | 2012-03-13 | 熱型赤外線検出器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007198852A JP2007198852A (ja) | 2007-08-09 |
JP5283825B2 true JP5283825B2 (ja) | 2013-09-04 |
Family
ID=38309213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006016733A Expired - Fee Related JP5283825B2 (ja) | 2006-01-25 | 2006-01-25 | 熱型赤外線検出器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8664510B2 (ja) |
EP (1) | EP1978339B1 (ja) |
JP (1) | JP5283825B2 (ja) |
KR (1) | KR101427431B1 (ja) |
CN (1) | CN101375140B (ja) |
TW (1) | TWI429886B (ja) |
WO (1) | WO2007086424A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5283825B2 (ja) | 2006-01-25 | 2013-09-04 | 浜松ホトニクス株式会社 | 熱型赤外線検出器 |
DE102008041750A1 (de) * | 2008-09-02 | 2010-03-18 | Robert Bosch Gmbh | Thermisch entkoppeltes mikrostrukturiertes Referenzelement für Sensoren |
US20150122999A1 (en) * | 2010-12-22 | 2015-05-07 | Seiko Epson Corporation | Thermal detector, thermal detection device, electronic instrument, and thermal detector manufacturing method |
JP5456810B2 (ja) * | 2012-03-13 | 2014-04-02 | 浜松ホトニクス株式会社 | 熱型赤外線検出器 |
JP5909421B2 (ja) | 2012-08-01 | 2016-04-26 | 浜松ホトニクス株式会社 | 複合センサ及び複合センサモジュール |
KR101910575B1 (ko) | 2013-01-10 | 2018-10-22 | 삼성전자주식회사 | 적외선 검출기 및 적외선 이미지 센서 |
US10788370B2 (en) * | 2015-11-27 | 2020-09-29 | Heimann Sensor Gmbh | Thermal infrared sensor array in wafer-level package |
CN106525247A (zh) * | 2016-11-04 | 2017-03-22 | 方悦强 | 基于变积分时间的实时红外线成像方法及装置 |
TWI646672B (zh) | 2017-12-01 | 2019-01-01 | 財團法人工業技術研究院 | 紅外線感測元件及其製造方法 |
TWI689710B (zh) * | 2019-07-12 | 2020-04-01 | 久尹股份有限公司 | 熱電堆感測元件之封裝結構 |
Family Cites Families (22)
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US5021663B1 (en) * | 1988-08-12 | 1997-07-01 | Texas Instruments Inc | Infrared detector |
JP2523895B2 (ja) | 1989-09-21 | 1996-08-14 | 松下電器産業株式会社 | 焦電型赤外線固体撮像装置 |
CN1020797C (zh) * | 1991-06-18 | 1993-05-19 | 北京市太阳能研究所 | 光-热转换吸收薄膜及制备 |
JPH06258144A (ja) | 1993-03-03 | 1994-09-16 | Casio Comput Co Ltd | 温度センサ |
JPH10185681A (ja) * | 1996-11-08 | 1998-07-14 | Mitsuteru Kimura | 熱型赤外線センサとその製造方法およびこれを用いた赤外線イメージセンサ |
CN1163733C (zh) * | 1998-12-04 | 2004-08-25 | 株式会社大宇电子 | 红外线辐射热测量器及其制造方法 |
JP3608427B2 (ja) | 1999-04-12 | 2005-01-12 | オムロン株式会社 | 赤外線吸収体及びこの赤外線吸収体を用いた熱型赤外線センサ |
JP2000321125A (ja) * | 1999-05-13 | 2000-11-24 | Mitsubishi Electric Corp | 赤外線センサ素子 |
JP2000337958A (ja) | 1999-05-25 | 2000-12-08 | Toyota Central Res & Dev Lab Inc | 抵抗変化型赤外線センサ |
CN1288151A (zh) * | 1999-09-09 | 2001-03-21 | 全磊微机电股份有限公司 | 热电堆感测元件及其制造方法 |
JP3921320B2 (ja) * | 2000-01-31 | 2007-05-30 | 日本電気株式会社 | 熱型赤外線検出器およびその製造方法 |
JP2001330511A (ja) * | 2000-05-18 | 2001-11-30 | Murata Mfg Co Ltd | 赤外線センサ |
JP3812881B2 (ja) | 2000-11-22 | 2006-08-23 | 株式会社アイ・エイチ・アイ・エアロスペース | 赤外線検出素子 |
US7734439B2 (en) | 2002-06-24 | 2010-06-08 | Mattson Technology, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
JP3616622B2 (ja) | 2002-08-26 | 2005-02-02 | 株式会社東芝 | 赤外線撮像装置 |
JP3944465B2 (ja) | 2003-04-11 | 2007-07-11 | 三菱電機株式会社 | 熱型赤外線検出器及び赤外線フォーカルプレーンアレイ |
JP4040548B2 (ja) | 2003-07-25 | 2008-01-30 | 株式会社東芝 | 赤外線撮像素子 |
US7491938B2 (en) * | 2004-03-23 | 2009-02-17 | Bae Systems Information And Electronic Systems Integration Inc. | Multi-spectral uncooled microbolometer detectors |
JP2005043381A (ja) | 2004-10-18 | 2005-02-17 | Nec Corp | 熱型赤外線検出器およびその製造方法 |
JP4228232B2 (ja) * | 2005-02-18 | 2009-02-25 | 日本電気株式会社 | 熱型赤外線検出素子 |
JP2007057427A (ja) * | 2005-08-25 | 2007-03-08 | Toyota Central Res & Dev Lab Inc | 赤外線吸収膜と赤外線検知センサ |
JP5283825B2 (ja) | 2006-01-25 | 2013-09-04 | 浜松ホトニクス株式会社 | 熱型赤外線検出器 |
-
2006
- 2006-01-25 JP JP2006016733A patent/JP5283825B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-24 US US12/161,868 patent/US8664510B2/en not_active Expired - Fee Related
- 2007-01-24 EP EP07707332.8A patent/EP1978339B1/en not_active Ceased
- 2007-01-24 WO PCT/JP2007/051085 patent/WO2007086424A1/ja active Application Filing
- 2007-01-24 KR KR1020087018861A patent/KR101427431B1/ko active IP Right Grant
- 2007-01-24 CN CN200780003604XA patent/CN101375140B/zh not_active Expired - Fee Related
- 2007-01-25 TW TW096102894A patent/TWI429886B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1978339A4 (en) | 2012-05-09 |
TWI429886B (zh) | 2014-03-11 |
TW200736587A (en) | 2007-10-01 |
KR20080091787A (ko) | 2008-10-14 |
JP2007198852A (ja) | 2007-08-09 |
US8664510B2 (en) | 2014-03-04 |
EP1978339B1 (en) | 2015-01-07 |
KR101427431B1 (ko) | 2014-08-08 |
EP1978339A1 (en) | 2008-10-08 |
WO2007086424A1 (ja) | 2007-08-02 |
CN101375140A (zh) | 2009-02-25 |
CN101375140B (zh) | 2010-08-18 |
US20090301542A1 (en) | 2009-12-10 |
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