JP5108566B2 - 赤外線検出素子の製造方法 - Google Patents
赤外線検出素子の製造方法 Download PDFInfo
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- JP5108566B2 JP5108566B2 JP2008060862A JP2008060862A JP5108566B2 JP 5108566 B2 JP5108566 B2 JP 5108566B2 JP 2008060862 A JP2008060862 A JP 2008060862A JP 2008060862 A JP2008060862 A JP 2008060862A JP 5108566 B2 JP5108566 B2 JP 5108566B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000001514 detection method Methods 0.000 claims description 78
- 238000005530 etching Methods 0.000 claims description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 68
- 229910052710 silicon Inorganic materials 0.000 claims description 68
- 239000010703 silicon Substances 0.000 claims description 68
- 238000002955 isolation Methods 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000006096 absorbing agent Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000708 deep reactive-ion etching Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/023—Particular leg structure or construction or shape; Nanotubes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Description
12a シリコンダイオード
12 シリコンダイオード部
14 梁部
16 素子分離部
18 エッチングホール
20 メタル
22 赤外線吸収体
24 空洞部
26 シリコン基板
28 BOX層
30 SOI層
32 保護膜
Claims (6)
- 支持基板上に酸化層を介してシリコン層を備えたSOI基板を準備する工程と、
前記SOI基板に形成される複数の赤外線検出素子の各々を取り囲み、かつ前記シリコン層から、前記酸化層を介して、前記支持基板の所定の深さまで延在するエッチングストッパとしての役割を担う素子分離層を形成する工程と、
前記複数の赤外線検出素子の各々に対応する前記シリコン層表面に保護膜を形成する工程と、
前記シリコン層、前記酸化層、および保護膜を貫通する貫通孔を形成する工程と、
前記貫通孔を用いて、前記素子分離層で取り囲まれた前記赤外線検出素子の各々に対応する前記支持基板を、前記支持基板の所定の深さまでエッチングする工程と、を有し、
前記素子分離層を形成する工程では、前記素子分離層が前記シリコン層表面において円形または正五角形以上の正多角形の形状を有し、1つの赤外線検出素子を取り囲む素子分離層の一部が、当該赤外線検出素子と隣り合う赤外線検出素子を取り囲む素子分離層の一部として用いられるように前記素子分離層を形成することを特徴とする赤外線検出装置の製造方法。 - 前記貫通孔を形成する工程では、前記貫通孔を、前記赤外線検出素子の中央部に1つ、または前記赤外線検出素子の中心を中心とする円周上に等間隔に複数形成することを特徴とする請求項1に記載の赤外線検出装置の製造方法。
- 前記素子分離層は前記シリコン層表面において正六角形の形状を有することを特徴とする請求項1または請求項2に記載の赤外線検出装置の製造方法。
- 前記保護膜の上に、赤外線を反射する赤外線反射層を形成する工程と、
前記赤外線反射層の上に、前記赤外線吸収部を形成する工程と、
を更に有することを特徴とする請求項1〜請求項3のいずれか1項記載の赤外線検出装置の製造方法。 - 前記素子分離層で分離された隣接する赤外線検出素子の各々は前記保護膜で覆われない金属層を介して電気的に接続され、
前記保護膜及び前記金属層の上に、導通防止膜を形成する工程と、
前記導通防止膜の上に、赤外線を反射する赤外線反射層を形成する工程と、
前記赤外線反射層の上に、前記赤外線吸収部を形成する工程と、
を更に有することを特徴とする請求項1〜請求項3のいずれか1項記載の赤外線検出装置の製造方法。 - 前記赤外線吸収部を形成する工程では、前記赤外線反射層上に犠牲層を形成し、該犠牲層上に前記赤外線吸収部を形成した後に該犠牲層を除去することにより、前記赤外線吸収部の少なくとも一部と前記赤外線反射膜との間に空間が形成されるように前記赤外線吸収部を形成することを特徴とする請求項4または請求項5記載の赤外線検出装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008060862A JP5108566B2 (ja) | 2008-03-11 | 2008-03-11 | 赤外線検出素子の製造方法 |
US12/382,067 US7754517B2 (en) | 2008-03-11 | 2009-03-06 | Method for manufacturing infrared detecting device |
Applications Claiming Priority (1)
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JP2008060862A JP5108566B2 (ja) | 2008-03-11 | 2008-03-11 | 赤外線検出素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2009216558A JP2009216558A (ja) | 2009-09-24 |
JP5108566B2 true JP5108566B2 (ja) | 2012-12-26 |
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JP2008060862A Expired - Fee Related JP5108566B2 (ja) | 2008-03-11 | 2008-03-11 | 赤外線検出素子の製造方法 |
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US (1) | US7754517B2 (ja) |
JP (1) | JP5108566B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20100012677A (ko) * | 2008-07-29 | 2010-02-08 | 주식회사 동부하이텍 | 이미지 센서 및 이의 제조 방법 |
US8604435B2 (en) * | 2009-02-26 | 2013-12-10 | Texas Instruments Incorporated | Infrared sensor structure and method |
US9157807B2 (en) * | 2009-06-24 | 2015-10-13 | Texas Instruments Incorporated | Etching cavity structures in silicon under dielectric membrane |
US9341529B2 (en) * | 2009-11-04 | 2016-05-17 | Rohm Co., Ltd | Pressure sensor and method for manufacturing pressure sensor |
JP5143176B2 (ja) * | 2010-03-31 | 2013-02-13 | 株式会社東芝 | 赤外線撮像素子およびその製造方法 |
JP5964543B2 (ja) * | 2010-06-15 | 2016-08-03 | 日本電気株式会社 | ボロメータ型テラヘルツ波検出器 |
JP2012194080A (ja) * | 2011-03-17 | 2012-10-11 | Nec Corp | ボロメータ型THz波検出器 |
DE102012218414A1 (de) * | 2012-10-10 | 2014-04-10 | Robert Bosch Gmbh | Integrierte Diodenanordnung und entsprechendes Herstellungsverfahren |
CN104681556B (zh) * | 2013-11-28 | 2017-12-05 | 中芯国际集成电路制造(上海)有限公司 | 一种集成电路及其制造方法和电子装置 |
KR102411749B1 (ko) * | 2015-01-08 | 2022-06-22 | 텔레다인 플리어, 엘엘시 | 적외선 기준 화소를 위한 장치 및 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09126895A (ja) | 1995-11-07 | 1997-05-16 | Matsushita Electric Ind Co Ltd | 焦電型赤外線検出器 |
JPH09325074A (ja) * | 1996-06-04 | 1997-12-16 | Horiba Ltd | 焦電型赤外線薄膜素子 |
JP4011851B2 (ja) | 1997-12-18 | 2007-11-21 | 三菱電機株式会社 | 赤外線固体撮像素子 |
JP3589997B2 (ja) * | 2001-03-30 | 2004-11-17 | 株式会社東芝 | 赤外線センサおよびその製造方法 |
JP3944465B2 (ja) * | 2003-04-11 | 2007-07-11 | 三菱電機株式会社 | 熱型赤外線検出器及び赤外線フォーカルプレーンアレイ |
DE10320357B4 (de) * | 2003-05-07 | 2010-05-12 | Perkinelmer Optoelectronics Gmbh & Co.Kg | Strahlungssensor, Wafer, Sensorarray und Sensormodul |
JP4315832B2 (ja) * | 2004-02-17 | 2009-08-19 | 三菱電機株式会社 | 熱型赤外センサ素子および熱型赤外センサアレイ |
US20050224714A1 (en) * | 2004-04-08 | 2005-10-13 | Tayfun Akin | Ultra low-cost uncooled infrared detector arrays in CMOS |
JP4901320B2 (ja) * | 2006-06-13 | 2012-03-21 | 三菱電機株式会社 | 2波長イメージセンサ |
-
2008
- 2008-03-11 JP JP2008060862A patent/JP5108566B2/ja not_active Expired - Fee Related
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2009
- 2009-03-06 US US12/382,067 patent/US7754517B2/en not_active Expired - Fee Related
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Publication number | Publication date |
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JP2009216558A (ja) | 2009-09-24 |
US20090275166A1 (en) | 2009-11-05 |
US7754517B2 (en) | 2010-07-13 |
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