JP3942683B2 - 半導体装置作製方法 - Google Patents

半導体装置作製方法 Download PDF

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Publication number
JP3942683B2
JP3942683B2 JP04457397A JP4457397A JP3942683B2 JP 3942683 B2 JP3942683 B2 JP 3942683B2 JP 04457397 A JP04457397 A JP 04457397A JP 4457397 A JP4457397 A JP 4457397A JP 3942683 B2 JP3942683 B2 JP 3942683B2
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film
mask
region
crystalline film
group
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Expired - Fee Related
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JP04457397A
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Japanese (ja)
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JPH10223533A (ja
JPH10223533A5 (https=
Inventor
舜平 山崎
英人 大沼
圭恵 高野
久 大谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP04457397A priority Critical patent/JP3942683B2/ja
Priority to US09/010,416 priority patent/US6162704A/en
Priority to KR1019980001975A priority patent/KR100538892B1/ko
Publication of JPH10223533A publication Critical patent/JPH10223533A/ja
Priority to US09/707,348 priority patent/US6461943B1/en
Priority to US10/265,181 priority patent/US7115452B2/en
Publication of JPH10223533A5 publication Critical patent/JPH10223533A5/ja
Priority to KR1020050016941A priority patent/KR100572819B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP04457397A 1997-02-12 1997-02-12 半導体装置作製方法 Expired - Fee Related JP3942683B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP04457397A JP3942683B2 (ja) 1997-02-12 1997-02-12 半導体装置作製方法
US09/010,416 US6162704A (en) 1997-02-12 1998-01-21 Method of making semiconductor device
KR1019980001975A KR100538892B1 (ko) 1997-02-12 1998-01-23 반도체디바이스제조방법
US09/707,348 US6461943B1 (en) 1997-02-12 2000-11-06 Method of making semiconductor device
US10/265,181 US7115452B2 (en) 1997-02-12 2002-10-04 Method of making semiconductor device
KR1020050016941A KR100572819B1 (ko) 1997-02-12 2005-02-28 반도체 디바이스 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04457397A JP3942683B2 (ja) 1997-02-12 1997-02-12 半導体装置作製方法

Publications (3)

Publication Number Publication Date
JPH10223533A JPH10223533A (ja) 1998-08-21
JPH10223533A5 JPH10223533A5 (https=) 2005-01-06
JP3942683B2 true JP3942683B2 (ja) 2007-07-11

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JP04457397A Expired - Fee Related JP3942683B2 (ja) 1997-02-12 1997-02-12 半導体装置作製方法

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US (3) US6162704A (https=)
JP (1) JP3942683B2 (https=)
KR (2) KR100538892B1 (https=)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
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US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
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US6355509B1 (en) * 1997-01-28 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication
JP3942683B2 (ja) 1997-02-12 2007-07-11 株式会社半導体エネルギー研究所 半導体装置作製方法
JP3844566B2 (ja) * 1997-07-30 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7166500B2 (en) * 1997-10-21 2007-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6821710B1 (en) * 1998-02-11 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2000039628A (ja) * 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd 半導体表示装置
US6294441B1 (en) 1998-08-18 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4545260B2 (ja) * 1998-12-03 2010-09-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4531177B2 (ja) * 1998-12-28 2010-08-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6878968B1 (en) * 1999-05-10 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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JP4761616B2 (ja) * 1999-11-26 2011-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
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US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
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US6927753B2 (en) * 2000-11-07 2005-08-09 Semiconductor Energy Laboratory Co., Ltd. Display device
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US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
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US7115453B2 (en) 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2002231627A (ja) 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4993810B2 (ja) 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5088993B2 (ja) 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4718700B2 (ja) 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP5072157B2 (ja) * 2001-09-27 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
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US7374976B2 (en) 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
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KR100612853B1 (ko) * 2004-07-21 2006-08-14 삼성전자주식회사 와이어 형태의 실리사이드를 포함하는 Ｓｉ 계열 물질층및 그 제조방법
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US8088676B2 (en) * 2005-04-28 2012-01-03 The Hong Kong University Of Science And Technology Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
KR100653853B1 (ko) * 2005-05-24 2006-12-05 네오폴리((주)) 비금속 씨드 에피 성장을 이용한 비정질 반도체 박막의결정화 방법 및 이를 이용한 다결정 박막 트랜지스터의제조방법
JP5352081B2 (ja) * 2006-12-20 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100875432B1 (ko) 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
KR100982310B1 (ko) 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
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US7115452B2 (en) 2006-10-03
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