JP3940539B2 - 半導体集積回路 - Google Patents

半導体集積回路 Download PDF

Info

Publication number
JP3940539B2
JP3940539B2 JP2000032636A JP2000032636A JP3940539B2 JP 3940539 B2 JP3940539 B2 JP 3940539B2 JP 2000032636 A JP2000032636 A JP 2000032636A JP 2000032636 A JP2000032636 A JP 2000032636A JP 3940539 B2 JP3940539 B2 JP 3940539B2
Authority
JP
Japan
Prior art keywords
read
data
write
memory
memory block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000032636A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001222885A5 (enExample
JP2001222885A (ja
Inventor
道明 中山
秀樹 榊原
徹 小林
修一 宮岡
勇治 横山
英雄 澤本
正二 久米
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000032636A priority Critical patent/JP3940539B2/ja
Priority to US09/775,544 priority patent/US6430103B2/en
Publication of JP2001222885A publication Critical patent/JP2001222885A/ja
Priority to US10/187,947 priority patent/US6714477B2/en
Publication of JP2001222885A5 publication Critical patent/JP2001222885A5/ja
Application granted granted Critical
Publication of JP3940539B2 publication Critical patent/JP3940539B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106Data output latches
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4093Input/output [I/O] data interface arrangements, e.g. data buffers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Memory System (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
JP2000032636A 2000-02-03 2000-02-03 半導体集積回路 Expired - Fee Related JP3940539B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000032636A JP3940539B2 (ja) 2000-02-03 2000-02-03 半導体集積回路
US09/775,544 US6430103B2 (en) 2000-02-03 2001-02-05 Semiconductor integrated circuit device with memory banks and read buffer capable of storing data read out from one memory bank when data of another memory bank is outputting
US10/187,947 US6714477B2 (en) 2000-02-03 2002-07-03 Semiconductor integrated circuit device with memory blocks and a write buffer capable of storing write data from an external interface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000032636A JP3940539B2 (ja) 2000-02-03 2000-02-03 半導体集積回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006293469A Division JP4674865B2 (ja) 2006-10-30 2006-10-30 半導体集積回路

Publications (3)

Publication Number Publication Date
JP2001222885A JP2001222885A (ja) 2001-08-17
JP2001222885A5 JP2001222885A5 (enExample) 2005-02-10
JP3940539B2 true JP3940539B2 (ja) 2007-07-04

Family

ID=18557214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000032636A Expired - Fee Related JP3940539B2 (ja) 2000-02-03 2000-02-03 半導体集積回路

Country Status (2)

Country Link
US (2) US6430103B2 (enExample)
JP (1) JP3940539B2 (enExample)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8050198B2 (en) * 1999-05-24 2011-11-01 Qualcomm Incorporated Method and system for scheduling data transmission in communication systems
JP3940539B2 (ja) * 2000-02-03 2007-07-04 株式会社日立製作所 半導体集積回路
US7120761B2 (en) 2000-12-20 2006-10-10 Fujitsu Limited Multi-port memory based on DRAM core
US6880056B2 (en) * 2002-03-28 2005-04-12 Hewlett-Packard Development, L.P. Memory array and method with simultaneous read/write capability
JP3816034B2 (ja) * 2002-07-16 2006-08-30 松下電器産業株式会社 メモリ混載半導体集積回路
US7515598B2 (en) * 2002-10-29 2009-04-07 Intel Corporation Configurable transmit and receive system interfaces for a network device
JP2004247566A (ja) * 2003-02-14 2004-09-02 Ricoh Co Ltd 半導体記憶装置
KR100546331B1 (ko) * 2003-06-03 2006-01-26 삼성전자주식회사 스택 뱅크들 마다 독립적으로 동작하는 멀티 포트 메모리장치
US6906964B2 (en) * 2003-06-27 2005-06-14 Hewlett-Packard Development Company, L.P. Multiple buffer memory interface
US20050007858A1 (en) * 2003-07-10 2005-01-13 Smith Kenneth K. Method and system for reducing power when writing information to MRAM
US20050097132A1 (en) * 2003-10-29 2005-05-05 Hewlett-Packard Development Company, L.P. Hierarchical storage system
JP4528087B2 (ja) * 2004-10-15 2010-08-18 富士通セミコンダクター株式会社 半導体メモリ
US8397013B1 (en) 2006-10-05 2013-03-12 Google Inc. Hybrid memory module
US7386656B2 (en) 2006-07-31 2008-06-10 Metaram, Inc. Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit
US9542352B2 (en) 2006-02-09 2017-01-10 Google Inc. System and method for reducing command scheduling constraints of memory circuits
US20080082763A1 (en) 2006-10-02 2008-04-03 Metaram, Inc. Apparatus and method for power management of memory circuits by a system or component thereof
US8090897B2 (en) 2006-07-31 2012-01-03 Google Inc. System and method for simulating an aspect of a memory circuit
US8089795B2 (en) 2006-02-09 2012-01-03 Google Inc. Memory module with memory stack and interface with enhanced capabilities
US9171585B2 (en) 2005-06-24 2015-10-27 Google Inc. Configurable memory circuit system and method
US8077535B2 (en) 2006-07-31 2011-12-13 Google Inc. Memory refresh apparatus and method
US8335894B1 (en) 2008-07-25 2012-12-18 Google Inc. Configurable memory system with interface circuit
US8244971B2 (en) 2006-07-31 2012-08-14 Google Inc. Memory circuit system and method
US20080028136A1 (en) 2006-07-31 2008-01-31 Schakel Keith R Method and apparatus for refresh management of memory modules
US8060774B2 (en) 2005-06-24 2011-11-15 Google Inc. Memory systems and memory modules
US8111566B1 (en) 2007-11-16 2012-02-07 Google, Inc. Optimal channel design for memory devices for providing a high-speed memory interface
US8359187B2 (en) 2005-06-24 2013-01-22 Google Inc. Simulating a different number of memory circuit devices
US8055833B2 (en) 2006-10-05 2011-11-08 Google Inc. System and method for increasing capacity, performance, and flexibility of flash storage
US7609567B2 (en) 2005-06-24 2009-10-27 Metaram, Inc. System and method for simulating an aspect of a memory circuit
US8081474B1 (en) 2007-12-18 2011-12-20 Google Inc. Embossed heat spreader
US7590796B2 (en) 2006-07-31 2009-09-15 Metaram, Inc. System and method for power management in memory systems
US8386722B1 (en) 2008-06-23 2013-02-26 Google Inc. Stacked DIMM memory interface
US8130560B1 (en) 2006-11-13 2012-03-06 Google Inc. Multi-rank partial width memory modules
US8438328B2 (en) 2008-02-21 2013-05-07 Google Inc. Emulation of abstracted DIMMs using abstracted DRAMs
US8327104B2 (en) 2006-07-31 2012-12-04 Google Inc. Adjusting the timing of signals associated with a memory system
US8041881B2 (en) 2006-07-31 2011-10-18 Google Inc. Memory device with emulated characteristics
US7392338B2 (en) 2006-07-31 2008-06-24 Metaram, Inc. Interface circuit system and method for autonomously performing power management operations in conjunction with a plurality of memory circuits
US8796830B1 (en) 2006-09-01 2014-08-05 Google Inc. Stackable low-profile lead frame package
US10013371B2 (en) 2005-06-24 2018-07-03 Google Llc Configurable memory circuit system and method
US9507739B2 (en) 2005-06-24 2016-11-29 Google Inc. Configurable memory circuit system and method
WO2007002324A2 (en) 2005-06-24 2007-01-04 Metaram, Inc. An integrated memory core and memory interface circuit
US7580312B2 (en) 2006-07-31 2009-08-25 Metaram, Inc. Power saving system and method for use with a plurality of memory circuits
JP4226577B2 (ja) * 2005-08-22 2009-02-18 マイクロン テクノロジー インコーポレイテッド 構造化遅延スキューを用いたバッファリング技術
GB2444663B (en) * 2005-09-02 2011-12-07 Metaram Inc Methods and apparatus of stacking drams
KR100721582B1 (ko) * 2005-09-29 2007-05-23 주식회사 하이닉스반도체 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자
DE102006045248A1 (de) * 2005-09-29 2007-04-19 Hynix Semiconductor Inc., Ichon Multiport-Speichervorrichtung mit serieller Eingabe-/Ausgabeschnittstelle
US9632929B2 (en) 2006-02-09 2017-04-25 Google Inc. Translating an address associated with a command communicated between a system and memory circuits
JP5061504B2 (ja) * 2006-05-25 2012-10-31 株式会社明電舎 デュアルポートメモリのアクセス権調停方式
US7724589B2 (en) 2006-07-31 2010-05-25 Google Inc. System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits
KR100909805B1 (ko) * 2006-09-21 2009-07-29 주식회사 하이닉스반도체 멀티포트 메모리 장치
US8209479B2 (en) 2007-07-18 2012-06-26 Google Inc. Memory circuit system and method
US9710384B2 (en) * 2008-01-04 2017-07-18 Micron Technology, Inc. Microprocessor architecture having alternative memory access paths
US8972958B1 (en) 2012-10-23 2015-03-03 Convey Computer Multistage development workflow for generating a custom instruction set reconfigurable processor
US8080874B1 (en) 2007-09-14 2011-12-20 Google Inc. Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween
US7920433B2 (en) * 2008-01-09 2011-04-05 Qimonda Ag Method and apparatus for storage device with a logic unit and method for manufacturing same
US8032804B2 (en) * 2009-01-12 2011-10-04 Micron Technology, Inc. Systems and methods for monitoring a memory system
DE202010017690U1 (de) 2009-06-09 2012-05-29 Google, Inc. Programmierung von Dimm-Abschlusswiderstandswerten
JP5760556B2 (ja) * 2011-03-18 2015-08-12 富士通株式会社 ストレージ装置、制御装置およびストレージ装置制御方法
US10430190B2 (en) 2012-06-07 2019-10-01 Micron Technology, Inc. Systems and methods for selectively controlling multithreaded execution of executable code segments
US9842630B2 (en) * 2013-10-16 2017-12-12 Rambus Inc. Memory component with adjustable core-to-interface data rate ratio
KR102373544B1 (ko) 2015-11-06 2022-03-11 삼성전자주식회사 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법
US10496422B2 (en) * 2015-11-12 2019-12-03 Total Phase, Inc. Serial device emulator using two memory levels with dynamic and configurable response
US10108376B1 (en) * 2017-05-04 2018-10-23 Xilinx, Inc. Memory initialization
JP2020166346A (ja) * 2019-03-28 2020-10-08 ラピスセミコンダクタ株式会社 半導体記憶装置
JP7764605B2 (ja) * 2023-09-27 2025-11-05 芯原微電子(上海)股▲ふん▼有限公司 キャッシュ、キャッシュ管理方法および電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2011518C (en) 1989-04-25 1993-04-20 Ronald N. Fortino Distributed cache dram chip and control method
JPH0711793B2 (ja) * 1989-07-13 1995-02-08 株式会社東芝 マイクロプロセッサ
CA2045791A1 (en) * 1990-06-29 1991-12-30 Richard Lee Sites Branch performance in high speed processor
JP3400824B2 (ja) 1992-11-06 2003-04-28 三菱電機株式会社 半導体記憶装置
US6370073B2 (en) * 1998-10-01 2002-04-09 Monlithic System Technology, Inc. Single-port multi-bank memory system having read and write buffers and method of operating same
US6415353B1 (en) * 1998-10-01 2002-07-02 Monolithic System Technology, Inc. Read/write buffers for complete hiding of the refresh of a semiconductor memory and method of operating same
JP3940539B2 (ja) * 2000-02-03 2007-07-04 株式会社日立製作所 半導体集積回路

Also Published As

Publication number Publication date
US6430103B2 (en) 2002-08-06
US6714477B2 (en) 2004-03-30
US20010012232A1 (en) 2001-08-09
US20020176308A1 (en) 2002-11-28
JP2001222885A (ja) 2001-08-17

Similar Documents

Publication Publication Date Title
JP3940539B2 (ja) 半導体集積回路
JP3304413B2 (ja) 半導体記憶装置
US6504785B1 (en) Multiprocessor system with integrated memory
US8122186B2 (en) Memory device, memory system and dual port memory device with self-copy function
US6381190B1 (en) Semiconductor memory device in which use of cache can be selected
US5509132A (en) Semiconductor memory device having an SRAM as a cache memory integrated on the same chip and operating method thereof
KR0184091B1 (ko) 다이나믹형 메모리
JP3400824B2 (ja) 半導体記憶装置
JP2777247B2 (ja) 半導体記憶装置およびキャッシュシステム
US6151664A (en) Programmable SRAM and DRAM cache interface with preset access priorities
US6483760B2 (en) Semiconductor memory integrated circuit operating at different test modes
KR20000011417A (ko) 반도체집적회로및데이터처리시스템
JPH0896570A (ja) ダイナミック型メモリ
US12100473B2 (en) Computer memory arrays employing memory banks and integrated serializer/de-serializer circuits for supporting serialization/de-serialization of read/write data in burst read/write modes, and related methods
US5400292A (en) Semiconductor memory device with changeable input/output data bit arrangement
JP2000268560A (ja) 半導体集積回路装置
JP3789998B2 (ja) メモリ内蔵プロセサ
JP2004288225A (ja) Dram及びアクセス方法
US6778461B2 (en) Dynamic random access memory device externally functionally equivalent to a static random access memory
US12073911B2 (en) Apparatuses and methods for command decoding
US7398362B1 (en) Programmable interleaving in multiple-bank memories
JP4674865B2 (ja) 半導体集積回路
US12073912B2 (en) Apparatuses and methods for command decoding with series connected latches
JP2001148194A (ja) 半導体記憶装置及びデータ処理装置
US7593283B2 (en) Semiconductor memory device

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040304

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040304

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060829

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061030

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070320

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070402

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110406

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120406

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees