JP3935898B2 - 光電センサ - Google Patents

光電センサ Download PDF

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Publication number
JP3935898B2
JP3935898B2 JP2004213904A JP2004213904A JP3935898B2 JP 3935898 B2 JP3935898 B2 JP 3935898B2 JP 2004213904 A JP2004213904 A JP 2004213904A JP 2004213904 A JP2004213904 A JP 2004213904A JP 3935898 B2 JP3935898 B2 JP 3935898B2
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JP
Japan
Prior art keywords
light
photoelectric sensor
light receiving
detection
viewing angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2004213904A
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English (en)
Japanese (ja)
Other versions
JP2006040913A (ja
Inventor
昌一 満武
一義 浜田
Original Assignee
竹中電子工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 竹中電子工業株式会社 filed Critical 竹中電子工業株式会社
Priority to JP2004213904A priority Critical patent/JP3935898B2/ja
Priority to TW093128857A priority patent/TWI276830B/zh
Priority to KR1020040079313A priority patent/KR100611129B1/ko
Publication of JP2006040913A publication Critical patent/JP2006040913A/ja
Application granted granted Critical
Publication of JP3935898B2 publication Critical patent/JP3935898B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00—Prospecting or detecting by optical means
    • G01V8/10—Detecting, e.g. by using light barriers
    • G01V8/20—Detecting, e.g. by using light barriers using multiple transmitters or receivers

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geophysics (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Switches Operated By Changes In Physical Conditions (AREA)
JP2004213904A 2004-07-22 2004-07-22 光電センサ Active JP3935898B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004213904A JP3935898B2 (ja) 2004-07-22 2004-07-22 光電センサ
TW093128857A TWI276830B (en) 2004-07-22 2004-09-23 Photoelectric sensor
KR1020040079313A KR100611129B1 (ko) 2004-07-22 2004-10-06 광전센서

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004213904A JP3935898B2 (ja) 2004-07-22 2004-07-22 光電センサ

Publications (2)

Publication Number Publication Date
JP2006040913A JP2006040913A (ja) 2006-02-09
JP3935898B2 true JP3935898B2 (ja) 2007-06-27

Family

ID=35905639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004213904A Active JP3935898B2 (ja) 2004-07-22 2004-07-22 光電センサ

Country Status (3)

Country Link
JP (1) JP3935898B2 (ko)
KR (1) KR100611129B1 (ko)
TW (1) TWI276830B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008033204A1 (de) * 2008-07-15 2010-02-04 Trw Automotive Electronics & Components Gmbh Optischer Sensor
JP6003121B2 (ja) * 2012-03-15 2016-10-05 オムロン株式会社 反射型光電センサ
JP2019133960A (ja) 2016-05-26 2019-08-08 シャープ株式会社 光センサ
CN108630561B (zh) * 2017-03-15 2021-10-15 北京北方华创微电子装备有限公司 基片表面的检测装置和检测方法、传片腔室
CN108132138A (zh) * 2017-11-23 2018-06-08 矽力杰半导体技术(杭州)有限公司 光学检测组件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63275920A (ja) * 1987-05-07 1988-11-14 Shin Etsu Polymer Co Ltd 光検出装置
JP2660929B2 (ja) * 1989-04-19 1997-10-08 ファナック株式会社 Ｃｃｄ固体撮像素子を用いたアークセンサ
JPH0533085U (ja) * 1991-10-09 1993-04-30 アツミ電気株式会社 赤外線投光器及び赤外線受光器
JPH06160528A (ja) * 1992-11-25 1994-06-07 Matsushita Electric Works Ltd 偏光回帰型光電センサ
JPH0743465A (ja) * 1993-07-26 1995-02-14 Saraya Kk 光電センサ
JP3473658B2 (ja) * 1996-07-18 2003-12-08 アルプス電気株式会社 指紋読取り装置
JPH1137740A (ja) * 1997-07-24 1999-02-12 Glory Ltd 紙葉類の損傷検知装置
JPH11163080A (ja) * 1997-11-26 1999-06-18 Mecs Corp ロボットハンド
JP2002026375A (ja) * 2000-07-05 2002-01-25 Oputeikon:Kk 光反射型センサ
JP4357731B2 (ja) * 2000-10-31 2009-11-04 サンクス株式会社 反射型光電センサの検出ヘッド
JP2002267498A (ja) * 2001-03-14 2002-09-18 Olympus Optical Co Ltd 光検出器

Also Published As

Publication number Publication date
TWI276830B (en) 2007-03-21
JP2006040913A (ja) 2006-02-09
KR20060008201A (ko) 2006-01-26
TW200604577A (en) 2006-02-01
KR100611129B1 (ko) 2006-08-10

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