KR100611129B1 - 광전센서 - Google Patents
광전센서 Download PDFInfo
- Publication number
- KR100611129B1 KR100611129B1 KR1020040079313A KR20040079313A KR100611129B1 KR 100611129 B1 KR100611129 B1 KR 100611129B1 KR 1020040079313 A KR1020040079313 A KR 1020040079313A KR 20040079313 A KR20040079313 A KR 20040079313A KR 100611129 B1 KR100611129 B1 KR 100611129B1
- Authority
- KR
- South Korea
- Prior art keywords
- light
- receiving element
- photoelectric sensor
- detection
- light receiving
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/20—Detecting, e.g. by using light barriers using multiple transmitters or receivers
Abstract
Description
Claims (3)
- 투광소자로부터 투사되는 광의 각도범위와 수광소자가 수광가능한 광의 각도범위가 중복되도록 배치된 광학계를 구비하고,상기 투광소자로부터 투사된 광이 상기 중복영역에 있는 검출대상의 표면에서 반사하여 상기 수광소자에 입사함으로써 상기 검출대상이 검출되는 한정반사형 광전센서로서,상기 투광소자로부터 상기 수광소자에 이르는 광선이 찾아 갈 경로에 있어서의, 상기 투광소자의 출사(出射)개구부 또는 상기 수광소자의 입사(入射)개구부의 한쪽 또는 쌍방에, 미리 소정의 경사각도를 가지는 방향판이 소정간격으로 복수 배열된 시야각 조정용 필터를 설치하고,상기 투광소자로부터 출사 혹은 상기 수광소자로 입사하는 광의 방향을 소정방향으로 제한하여, 상기 투광소자로부터 상기 중복영역 밖으로 광을 투사하는 것 또는 상기 중복영역 밖으로부터의 광이 상기 수광소자에 입사하는 것을 방지하도록 한 것을 특징으로 하는 광전센서.
- 제1항에 있어서,상기 투광소자, 수광소자 및 시야각 조정용 필터 그밖의 것을 수용하는 케이스를 가지고,상기 투광소자 및 수광소자 그리고 상기 시야각 조정용 필터를 상기 케이스 표면에 형성된 오목부 내에 설치하여, 광학계를 상기 케이스 표면으로부터 오프셋하여 구성한 것을 특징으로 하는 광전센서.
- 소정간격으로 배열된 복수의 검출대상을 검출하기 위한 센서 어레이로서,상기 검출대상의 배열간격에 상당하는 간격으로 일직선상에 배열된, 상기 검출대상의 수에 대응하는 수의 청구항 1 또는 청구항 2에 기재된 광전센서로 이루어지고,상기 광전센서를 각각, 소정간격으로 배열된 검출대상끼리의 사이에 있는 공간 내에 삽입함으로써 복수의 상기 검출대상의 유무를 일괄 검출하는 것을 특징으로 센서 어레이.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2004-00213904 | 2004-07-22 | ||
JP2004213904A JP3935898B2 (ja) | 2004-07-22 | 2004-07-22 | 光電センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060008201A KR20060008201A (ko) | 2006-01-26 |
KR100611129B1 true KR100611129B1 (ko) | 2006-08-10 |
Family
ID=35905639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040079313A KR100611129B1 (ko) | 2004-07-22 | 2004-10-06 | 광전센서 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3935898B2 (ko) |
KR (1) | KR100611129B1 (ko) |
TW (1) | TWI276830B (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008033204A1 (de) * | 2008-07-15 | 2010-02-04 | Trw Automotive Electronics & Components Gmbh | Optischer Sensor |
JP6003121B2 (ja) * | 2012-03-15 | 2016-10-05 | オムロン株式会社 | 反射型光電センサ |
JP2019133960A (ja) * | 2016-05-26 | 2019-08-08 | シャープ株式会社 | 光センサ |
CN108630561B (zh) * | 2017-03-15 | 2021-10-15 | 北京北方华创微电子装备有限公司 | 基片表面的检测装置和检测方法、传片腔室 |
CN108132138A (zh) * | 2017-11-23 | 2018-06-08 | 矽力杰半导体技术(杭州)有限公司 | 光学检测组件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63275920A (ja) | 1987-05-07 | 1988-11-14 | Shin Etsu Polymer Co Ltd | 光検出装置 |
KR920700391A (ko) * | 1989-04-19 | 1992-02-19 | 광학식 거리 센서 | |
JPH06160528A (ja) * | 1992-11-25 | 1994-06-07 | Matsushita Electric Works Ltd | 偏光回帰型光電センサ |
JPH0743465A (ja) * | 1993-07-26 | 1995-02-14 | Saraya Kk | 光電センサ |
JP2002026375A (ja) | 2000-07-05 | 2002-01-25 | Oputeikon:Kk | 光反射型センサ |
JP2002139575A (ja) | 2000-10-31 | 2002-05-17 | Sunx Ltd | 反射型光電センサの検出ヘッド |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0533085U (ja) * | 1991-10-09 | 1993-04-30 | アツミ電気株式会社 | 赤外線投光器及び赤外線受光器 |
JP3473658B2 (ja) * | 1996-07-18 | 2003-12-08 | アルプス電気株式会社 | 指紋読取り装置 |
JPH1137740A (ja) * | 1997-07-24 | 1999-02-12 | Glory Ltd | 紙葉類の損傷検知装置 |
JPH11163080A (ja) * | 1997-11-26 | 1999-06-18 | Mecs Corp | ロボットハンド |
JP2002267498A (ja) * | 2001-03-14 | 2002-09-18 | Olympus Optical Co Ltd | 光検出器 |
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2004
- 2004-07-22 JP JP2004213904A patent/JP3935898B2/ja active Active
- 2004-09-23 TW TW093128857A patent/TWI276830B/zh active
- 2004-10-06 KR KR1020040079313A patent/KR100611129B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63275920A (ja) | 1987-05-07 | 1988-11-14 | Shin Etsu Polymer Co Ltd | 光検出装置 |
KR920700391A (ko) * | 1989-04-19 | 1992-02-19 | 광학식 거리 센서 | |
JPH06160528A (ja) * | 1992-11-25 | 1994-06-07 | Matsushita Electric Works Ltd | 偏光回帰型光電センサ |
JPH0743465A (ja) * | 1993-07-26 | 1995-02-14 | Saraya Kk | 光電センサ |
JP2002026375A (ja) | 2000-07-05 | 2002-01-25 | Oputeikon:Kk | 光反射型センサ |
JP2002139575A (ja) | 2000-10-31 | 2002-05-17 | Sunx Ltd | 反射型光電センサの検出ヘッド |
Also Published As
Publication number | Publication date |
---|---|
TWI276830B (en) | 2007-03-21 |
JP2006040913A (ja) | 2006-02-09 |
JP3935898B2 (ja) | 2007-06-27 |
KR20060008201A (ko) | 2006-01-26 |
TW200604577A (en) | 2006-02-01 |
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