JP3925253B2 - 横型接合型電界効果トランジスタおよびその製造方法 - Google Patents

横型接合型電界効果トランジスタおよびその製造方法 Download PDF

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Publication number
JP3925253B2
JP3925253B2 JP2002071944A JP2002071944A JP3925253B2 JP 3925253 B2 JP3925253 B2 JP 3925253B2 JP 2002071944 A JP2002071944 A JP 2002071944A JP 2002071944 A JP2002071944 A JP 2002071944A JP 3925253 B2 JP3925253 B2 JP 3925253B2
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Japan
Prior art keywords
semiconductor layer
gate electrode
layer
conductivity type
impurity
Prior art date
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Expired - Fee Related
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JP2002071944A
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English (en)
Japanese (ja)
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JP2003273126A (ja
JP2003273126A5 (enExample
Inventor
一洋 藤川
真 原田
研一 弘津
聡 初川
孝志 星野
弘之 松波
恒暢 木本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2002071944A priority Critical patent/JP3925253B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to EP02786001A priority patent/EP1487024A4/en
Priority to US10/496,040 priority patent/US7049644B2/en
Priority to CA2708358A priority patent/CA2708358A1/en
Priority to KR1020047014319A priority patent/KR100876487B1/ko
Priority to AU2002354162A priority patent/AU2002354162A1/en
Priority to PCT/JP2002/012608 priority patent/WO2003079455A1/ja
Priority to CA002465340A priority patent/CA2465340A1/en
Priority to CNB028282019A priority patent/CN100379029C/zh
Priority to TW091136823A priority patent/TWI248680B/zh
Publication of JP2003273126A publication Critical patent/JP2003273126A/ja
Publication of JP2003273126A5 publication Critical patent/JP2003273126A5/ja
Priority to US11/402,701 priority patent/US7420232B2/en
Application granted granted Critical
Publication of JP3925253B2 publication Critical patent/JP3925253B2/ja
Priority to US12/179,320 priority patent/US7671387B2/en
Priority to US12/552,212 priority patent/US7671388B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2002071944A 2002-03-15 2002-03-15 横型接合型電界効果トランジスタおよびその製造方法 Expired - Fee Related JP3925253B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP2002071944A JP3925253B2 (ja) 2002-03-15 2002-03-15 横型接合型電界効果トランジスタおよびその製造方法
US10/496,040 US7049644B2 (en) 2002-03-15 2002-12-02 Lateral junction field effect transistor and method of manufacturing the same
CA2708358A CA2708358A1 (en) 2002-03-15 2002-12-02 Lateral junction field effect transistor and method of manufacturing the same
KR1020047014319A KR100876487B1 (ko) 2002-03-15 2002-12-02 횡형 접합형 전계효과트랜지스터 및 그 제조방법
AU2002354162A AU2002354162A1 (en) 2002-03-15 2002-12-02 Lateral junctiion field-effect transistor and its manufacturing method
PCT/JP2002/012608 WO2003079455A1 (en) 2002-03-15 2002-12-02 Lateral junctiion field-effect transistor and its manufacturing method
CA002465340A CA2465340A1 (en) 2002-03-15 2002-12-02 Lateral junction field effect transistor and method of manufacturing the same
CNB028282019A CN100379029C (zh) 2002-03-15 2002-12-02 横型接合型场效应晶体管及其制造方法
EP02786001A EP1487024A4 (en) 2002-03-15 2002-12-02 LATERAL JUNCTION FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
TW091136823A TWI248680B (en) 2002-03-15 2002-12-20 Lateral-type junction field effect transistor and its manufacturing method
US11/402,701 US7420232B2 (en) 2002-03-15 2006-04-11 Lateral junction field effect transistor and method of manufacturing the same
US12/179,320 US7671387B2 (en) 2002-03-15 2008-07-24 Lateral junction field effect transistor and method of manufacturing the same
US12/552,212 US7671388B2 (en) 2002-03-15 2009-09-01 Lateral junction field effect transistor and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002071944A JP3925253B2 (ja) 2002-03-15 2002-03-15 横型接合型電界効果トランジスタおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2003273126A JP2003273126A (ja) 2003-09-26
JP2003273126A5 JP2003273126A5 (enExample) 2005-01-06
JP3925253B2 true JP3925253B2 (ja) 2007-06-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002071944A Expired - Fee Related JP3925253B2 (ja) 2002-03-15 2002-03-15 横型接合型電界効果トランジスタおよびその製造方法

Country Status (9)

Country Link
US (4) US7049644B2 (enExample)
EP (1) EP1487024A4 (enExample)
JP (1) JP3925253B2 (enExample)
KR (1) KR100876487B1 (enExample)
CN (1) CN100379029C (enExample)
AU (1) AU2002354162A1 (enExample)
CA (2) CA2465340A1 (enExample)
TW (1) TWI248680B (enExample)
WO (1) WO2003079455A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2008282878A (ja) * 2007-05-08 2008-11-20 Rohm Co Ltd 半導体装置およびその製造方法

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DE10325748B4 (de) * 2003-06-06 2008-10-02 Infineon Technologies Ag Sperrschicht-Feldeffekttransistor (JFET) mit Kompensationsstruktur und Feldstoppzone
WO2007094493A1 (ja) 2006-02-14 2007-08-23 National Institute Of Advanced Industrial Science And Technology 光電界効果トランジスタ、及びそれを用いた集積型フォトディテクタ
US7646043B2 (en) * 2006-09-28 2010-01-12 Cree, Inc. Transistors having buried p-type layers coupled to the gate
US7977714B2 (en) * 2007-10-19 2011-07-12 International Business Machines Corporation Wrapped gate junction field effect transistor
US8373208B2 (en) * 2009-11-30 2013-02-12 Alpha And Omega Semiconductor Incorporated Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
US9450050B2 (en) * 2009-11-30 2016-09-20 Alpha And Omega Semiconductor Incorporated Lateral super junctions with high substrate breakdown and build in avalanche clamp diode
KR20130040383A (ko) * 2011-10-14 2013-04-24 주식회사 동부하이텍 고전압 트랜지스터 및 그의 제조방법
JP2013201190A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 接合形電界効果トランジスタ及びその製造方法
KR101866673B1 (ko) * 2013-12-25 2018-06-11 캐논 가부시끼가이샤 촬상 장치, 촬상 시스템 및 촬상 장치의 제조 방법
JP6265731B2 (ja) * 2013-12-25 2018-01-24 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の製造方法。
JP2015125997A (ja) * 2013-12-25 2015-07-06 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の製造方法。
TWI553868B (zh) * 2014-04-03 2016-10-11 世界先進積體電路股份有限公司 半導體裝置與其形成方法
US12048338B2 (en) 2018-03-28 2024-07-30 Ifgcure Holdings, Llc Wearable orthopedic device for lower body posture correction and improved ergonomics
EP3696863B1 (en) * 2019-02-15 2021-10-13 Infineon Technologies Austria AG Lateral transistor device
US11031480B2 (en) * 2019-09-13 2021-06-08 K. Eklund Innovation Semiconductor device, comprising an insulated gate field effect transistor connected in series with a field effect transistor
US11869983B2 (en) * 2020-03-12 2024-01-09 International Business Machines Corporation Low voltage/power junction FET with all-around junction gate
KR102546323B1 (ko) 2021-07-02 2023-06-21 삼성전자주식회사 전계 효과 게이트를 가지는 질화물 반도체 소자
JPWO2024014510A1 (enExample) * 2022-07-14 2024-01-18

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JPS63131579A (ja) * 1986-11-21 1988-06-03 Hitachi Ltd 半導体装置
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Publication number Priority date Publication date Assignee Title
JP2008282878A (ja) * 2007-05-08 2008-11-20 Rohm Co Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US7049644B2 (en) 2006-05-23
WO2003079455A1 (en) 2003-09-25
KR100876487B1 (ko) 2008-12-31
US20050093017A1 (en) 2005-05-05
CN100379029C (zh) 2008-04-02
CA2465340A1 (en) 2003-09-25
CN1620730A (zh) 2005-05-25
US7671387B2 (en) 2010-03-02
US20060202238A1 (en) 2006-09-14
JP2003273126A (ja) 2003-09-26
CA2708358A1 (en) 2003-09-25
AU2002354162A1 (en) 2003-09-29
KR20040091130A (ko) 2004-10-27
US20090315082A1 (en) 2009-12-24
EP1487024A4 (en) 2009-10-21
US20080277696A1 (en) 2008-11-13
EP1487024A1 (en) 2004-12-15
US7671388B2 (en) 2010-03-02
TWI248680B (en) 2006-02-01
TW200308094A (en) 2003-12-16
US7420232B2 (en) 2008-09-02

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