TWI248680B - Lateral-type junction field effect transistor and its manufacturing method - Google Patents

Lateral-type junction field effect transistor and its manufacturing method Download PDF

Info

Publication number
TWI248680B
TWI248680B TW091136823A TW91136823A TWI248680B TW I248680 B TWI248680 B TW I248680B TW 091136823 A TW091136823 A TW 091136823A TW 91136823 A TW91136823 A TW 91136823A TW I248680 B TWI248680 B TW I248680B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
layer
impurity
semiconductor
gate
Prior art date
Application number
TW091136823A
Other languages
English (en)
Chinese (zh)
Other versions
TW200308094A (en
Inventor
Kazuhiro Fujikawa
Shin Harada
Kenichi Hirotsu
Satoshi Hatsukawa
Takashi Hoshino
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200308094A publication Critical patent/TW200308094A/zh
Application granted granted Critical
Publication of TWI248680B publication Critical patent/TWI248680B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
TW091136823A 2002-03-15 2002-12-20 Lateral-type junction field effect transistor and its manufacturing method TWI248680B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002071944A JP3925253B2 (ja) 2002-03-15 2002-03-15 横型接合型電界効果トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
TW200308094A TW200308094A (en) 2003-12-16
TWI248680B true TWI248680B (en) 2006-02-01

Family

ID=28035142

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091136823A TWI248680B (en) 2002-03-15 2002-12-20 Lateral-type junction field effect transistor and its manufacturing method

Country Status (9)

Country Link
US (4) US7049644B2 (enExample)
EP (1) EP1487024A4 (enExample)
JP (1) JP3925253B2 (enExample)
KR (1) KR100876487B1 (enExample)
CN (1) CN100379029C (enExample)
AU (1) AU2002354162A1 (enExample)
CA (2) CA2465340A1 (enExample)
TW (1) TWI248680B (enExample)
WO (1) WO2003079455A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10325748B4 (de) * 2003-06-06 2008-10-02 Infineon Technologies Ag Sperrschicht-Feldeffekttransistor (JFET) mit Kompensationsstruktur und Feldstoppzone
WO2007094493A1 (ja) 2006-02-14 2007-08-23 National Institute Of Advanced Industrial Science And Technology 光電界効果トランジスタ、及びそれを用いた集積型フォトディテクタ
US7646043B2 (en) * 2006-09-28 2010-01-12 Cree, Inc. Transistors having buried p-type layers coupled to the gate
JP2008282878A (ja) * 2007-05-08 2008-11-20 Rohm Co Ltd 半導体装置およびその製造方法
US7977714B2 (en) * 2007-10-19 2011-07-12 International Business Machines Corporation Wrapped gate junction field effect transistor
US8373208B2 (en) * 2009-11-30 2013-02-12 Alpha And Omega Semiconductor Incorporated Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
US9450050B2 (en) * 2009-11-30 2016-09-20 Alpha And Omega Semiconductor Incorporated Lateral super junctions with high substrate breakdown and build in avalanche clamp diode
KR20130040383A (ko) * 2011-10-14 2013-04-24 주식회사 동부하이텍 고전압 트랜지스터 및 그의 제조방법
JP2013201190A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 接合形電界効果トランジスタ及びその製造方法
KR101866673B1 (ko) * 2013-12-25 2018-06-11 캐논 가부시끼가이샤 촬상 장치, 촬상 시스템 및 촬상 장치의 제조 방법
JP6265731B2 (ja) * 2013-12-25 2018-01-24 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の製造方法。
JP2015125997A (ja) * 2013-12-25 2015-07-06 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の製造方法。
TWI553868B (zh) * 2014-04-03 2016-10-11 世界先進積體電路股份有限公司 半導體裝置與其形成方法
US12048338B2 (en) 2018-03-28 2024-07-30 Ifgcure Holdings, Llc Wearable orthopedic device for lower body posture correction and improved ergonomics
EP3696863B1 (en) * 2019-02-15 2021-10-13 Infineon Technologies Austria AG Lateral transistor device
US11031480B2 (en) * 2019-09-13 2021-06-08 K. Eklund Innovation Semiconductor device, comprising an insulated gate field effect transistor connected in series with a field effect transistor
US11869983B2 (en) * 2020-03-12 2024-01-09 International Business Machines Corporation Low voltage/power junction FET with all-around junction gate
KR102546323B1 (ko) 2021-07-02 2023-06-21 삼성전자주식회사 전계 효과 게이트를 가지는 질화물 반도체 소자
JPWO2024014510A1 (enExample) * 2022-07-14 2024-01-18

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755012A (en) * 1971-03-19 1973-08-28 Motorola Inc Controlled anisotropic etching process for fabricating dielectrically isolated field effect transistor
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
EP0268426A3 (en) 1986-11-17 1989-03-15 Linear Technology Corporation High speed junction field effect transistor for use in bipolar integrated circuits
JPS63131579A (ja) * 1986-11-21 1988-06-03 Hitachi Ltd 半導体装置
JPH025533A (ja) * 1988-06-24 1990-01-10 Nec Corp 接合型電界効果トランジスタ及びその製造方法
US5264713A (en) 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
US5412224A (en) * 1992-06-08 1995-05-02 Motorola, Inc. Field effect transistor with non-linear transfer characteristic
SE500815C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Dielektriskt isolerad halvledaranordning och förfarande för dess framställning
US5436499A (en) * 1994-03-11 1995-07-25 Spire Corporation High performance GaAs devices and method
US5399887A (en) * 1994-05-03 1995-03-21 Motorola, Inc. Modulation doped field effect transistor
JP2713205B2 (ja) * 1995-02-21 1998-02-16 日本電気株式会社 半導体装置
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
US6005267A (en) * 1995-09-29 1999-12-21 Itt Corporation MES/MIS FET with split-gate RF input
GB2355585B (en) 1996-01-22 2001-05-30 Fuji Electric Co Ltd Semiconductor device
US6800903B2 (en) * 1996-11-05 2004-10-05 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6207994B1 (en) * 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
JPH10209174A (ja) * 1997-01-27 1998-08-07 Nikon Corp 接合型電界効果トランジスタ
US5714777A (en) * 1997-02-19 1998-02-03 International Business Machines Corporation Si/SiGe vertical junction field effect transistor
US6246083B1 (en) * 1998-02-24 2001-06-12 Micron Technology, Inc. Vertical gain cell and array for a dynamic random access memory
JP2001274414A (ja) 2000-03-24 2001-10-05 Toshiba Corp 電力用半導体素子およびその駆動方法
JP3812421B2 (ja) * 2001-06-14 2006-08-23 住友電気工業株式会社 横型接合型電界効果トランジスタ
JP3764401B2 (ja) * 2002-04-18 2006-04-05 株式会社東芝 半導体装置の製造方法

Also Published As

Publication number Publication date
US7049644B2 (en) 2006-05-23
WO2003079455A1 (en) 2003-09-25
KR100876487B1 (ko) 2008-12-31
US20050093017A1 (en) 2005-05-05
CN100379029C (zh) 2008-04-02
CA2465340A1 (en) 2003-09-25
CN1620730A (zh) 2005-05-25
US7671387B2 (en) 2010-03-02
US20060202238A1 (en) 2006-09-14
JP2003273126A (ja) 2003-09-26
CA2708358A1 (en) 2003-09-25
AU2002354162A1 (en) 2003-09-29
KR20040091130A (ko) 2004-10-27
US20090315082A1 (en) 2009-12-24
EP1487024A4 (en) 2009-10-21
US20080277696A1 (en) 2008-11-13
EP1487024A1 (en) 2004-12-15
US7671388B2 (en) 2010-03-02
JP3925253B2 (ja) 2007-06-06
TW200308094A (en) 2003-12-16
US7420232B2 (en) 2008-09-02

Similar Documents

Publication Publication Date Title
TWI248680B (en) Lateral-type junction field effect transistor and its manufacturing method
TWI364110B (en) High voltage semiconductor devices
TWI314361B (en) High density nand non-volatile memory device
TWI302740B (en) A method of preparing a vertical channel of a field effect transistor, a field effect transistor using the method and a method of preparing an inverter made of a field effect transistor with a vertical channel, an inverter using the method
TW522569B (en) Power MOS device with buried gate
TWI288480B (en) Vertical junction field effect transistor and manufacturing method of vertical junction field effect transistor
TWI360227B (en) Semiconductor device and method of manufacturing s
TW200810107A (en) High performance 3D FET structures, and methods for forming the same using preferential crystallographic etching
JP5819064B2 (ja) 半導体装置
TWI236145B (en) Device and method of making vertical gate semiconductor
JP2010021175A (ja) 炭化珪素半導体装置およびその製造方法
JP2009135360A (ja) 半導体装置およびその製造方法
TW201123461A (en) A lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode
TW200901464A (en) Method for applying a stress layer to a semiconductor device and device formed therefrom
TW200845394A (en) Semiconductor device and method of fabricating the same
TW200849595A (en) Semiconductor device and semiconductor device manufacturing method
TW200810121A (en) Lateral trench gate fet with direct source-drain current path
TW200401408A (en) Self aligned method of forming a semiconductor memory array of floating gate memory cells with non-linear elongated floating gate, and a memory array made thereby
TWI378563B (en) Mos device with schottky barrier controlling layer
JP6510612B2 (ja) 半導体装置
TW200416999A (en) Semiconductor storage device
KR20200054881A (ko) 초접합 및 산소 삽입된 si 층을 구비한 반도체 장치
JP2003273126A5 (enExample)
TW200818498A (en) Power IC device and manufacturing method thereof
TW200807713A (en) Semiconductor structures

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees