KR100876487B1 - 횡형 접합형 전계효과트랜지스터 및 그 제조방법 - Google Patents

횡형 접합형 전계효과트랜지스터 및 그 제조방법

Info

Publication number
KR100876487B1
KR100876487B1 KR1020047014319A KR20047014319A KR100876487B1 KR 100876487 B1 KR100876487 B1 KR 100876487B1 KR 1020047014319 A KR1020047014319 A KR 1020047014319A KR 20047014319 A KR20047014319 A KR 20047014319A KR 100876487 B1 KR100876487 B1 KR 100876487B1
Authority
KR
South Korea
Prior art keywords
semiconductor layer
layer
gate electrode
impurity
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020047014319A
Other languages
English (en)
Korean (ko)
Other versions
KR20040091130A (ko
Inventor
후지카와카즈히로
하라다신
히로츠케니치
하츠카와사토시
호시노타카시
마츠나미히로유키
키모토츠네노부
Original Assignee
스미토모덴키고교가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스미토모덴키고교가부시키가이샤 filed Critical 스미토모덴키고교가부시키가이샤
Publication of KR20040091130A publication Critical patent/KR20040091130A/ko
Application granted granted Critical
Publication of KR100876487B1 publication Critical patent/KR100876487B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020047014319A 2002-03-15 2002-12-02 횡형 접합형 전계효과트랜지스터 및 그 제조방법 Expired - Fee Related KR100876487B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00071944 2002-03-15
JP2002071944A JP3925253B2 (ja) 2002-03-15 2002-03-15 横型接合型電界効果トランジスタおよびその製造方法
PCT/JP2002/012608 WO2003079455A1 (en) 2002-03-15 2002-12-02 Lateral junctiion field-effect transistor and its manufacturing method

Publications (2)

Publication Number Publication Date
KR20040091130A KR20040091130A (ko) 2004-10-27
KR100876487B1 true KR100876487B1 (ko) 2008-12-31

Family

ID=28035142

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047014319A Expired - Fee Related KR100876487B1 (ko) 2002-03-15 2002-12-02 횡형 접합형 전계효과트랜지스터 및 그 제조방법

Country Status (9)

Country Link
US (4) US7049644B2 (enExample)
EP (1) EP1487024A4 (enExample)
JP (1) JP3925253B2 (enExample)
KR (1) KR100876487B1 (enExample)
CN (1) CN100379029C (enExample)
AU (1) AU2002354162A1 (enExample)
CA (2) CA2465340A1 (enExample)
TW (1) TWI248680B (enExample)
WO (1) WO2003079455A1 (enExample)

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Publication number Priority date Publication date Assignee Title
KR20230006329A (ko) * 2021-07-02 2023-01-10 삼성전자주식회사 전계 효과 게이트를 가지는 질화물 반도체 소자

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DE10325748B4 (de) * 2003-06-06 2008-10-02 Infineon Technologies Ag Sperrschicht-Feldeffekttransistor (JFET) mit Kompensationsstruktur und Feldstoppzone
WO2007094493A1 (ja) 2006-02-14 2007-08-23 National Institute Of Advanced Industrial Science And Technology 光電界効果トランジスタ、及びそれを用いた集積型フォトディテクタ
US7646043B2 (en) * 2006-09-28 2010-01-12 Cree, Inc. Transistors having buried p-type layers coupled to the gate
JP2008282878A (ja) * 2007-05-08 2008-11-20 Rohm Co Ltd 半導体装置およびその製造方法
US7977714B2 (en) * 2007-10-19 2011-07-12 International Business Machines Corporation Wrapped gate junction field effect transistor
US8373208B2 (en) * 2009-11-30 2013-02-12 Alpha And Omega Semiconductor Incorporated Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
US9450050B2 (en) * 2009-11-30 2016-09-20 Alpha And Omega Semiconductor Incorporated Lateral super junctions with high substrate breakdown and build in avalanche clamp diode
KR20130040383A (ko) * 2011-10-14 2013-04-24 주식회사 동부하이텍 고전압 트랜지스터 및 그의 제조방법
JP2013201190A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 接合形電界効果トランジスタ及びその製造方法
KR101866673B1 (ko) * 2013-12-25 2018-06-11 캐논 가부시끼가이샤 촬상 장치, 촬상 시스템 및 촬상 장치의 제조 방법
JP6265731B2 (ja) * 2013-12-25 2018-01-24 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の製造方法。
JP2015125997A (ja) * 2013-12-25 2015-07-06 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の製造方法。
TWI553868B (zh) * 2014-04-03 2016-10-11 世界先進積體電路股份有限公司 半導體裝置與其形成方法
US12048338B2 (en) 2018-03-28 2024-07-30 Ifgcure Holdings, Llc Wearable orthopedic device for lower body posture correction and improved ergonomics
EP3696863B1 (en) * 2019-02-15 2021-10-13 Infineon Technologies Austria AG Lateral transistor device
US11031480B2 (en) * 2019-09-13 2021-06-08 K. Eklund Innovation Semiconductor device, comprising an insulated gate field effect transistor connected in series with a field effect transistor
US11869983B2 (en) * 2020-03-12 2024-01-09 International Business Machines Corporation Low voltage/power junction FET with all-around junction gate
JPWO2024014510A1 (enExample) * 2022-07-14 2024-01-18

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US3755012A (en) * 1971-03-19 1973-08-28 Motorola Inc Controlled anisotropic etching process for fabricating dielectrically isolated field effect transistor
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
EP0268426A3 (en) 1986-11-17 1989-03-15 Linear Technology Corporation High speed junction field effect transistor for use in bipolar integrated circuits
JPS63131579A (ja) * 1986-11-21 1988-06-03 Hitachi Ltd 半導体装置
JPH025533A (ja) * 1988-06-24 1990-01-10 Nec Corp 接合型電界効果トランジスタ及びその製造方法
US5264713A (en) 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
US5412224A (en) * 1992-06-08 1995-05-02 Motorola, Inc. Field effect transistor with non-linear transfer characteristic
SE500815C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Dielektriskt isolerad halvledaranordning och förfarande för dess framställning
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US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
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JPH10209174A (ja) * 1997-01-27 1998-08-07 Nikon Corp 接合型電界効果トランジスタ
US5714777A (en) * 1997-02-19 1998-02-03 International Business Machines Corporation Si/SiGe vertical junction field effect transistor
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230006329A (ko) * 2021-07-02 2023-01-10 삼성전자주식회사 전계 효과 게이트를 가지는 질화물 반도체 소자
KR102546323B1 (ko) * 2021-07-02 2023-06-21 삼성전자주식회사 전계 효과 게이트를 가지는 질화물 반도체 소자
US12113110B2 (en) 2021-07-02 2024-10-08 Samsung Electronics Co., Ltd. Nitride semiconductor device with field effect gate

Also Published As

Publication number Publication date
US7049644B2 (en) 2006-05-23
WO2003079455A1 (en) 2003-09-25
US20050093017A1 (en) 2005-05-05
CN100379029C (zh) 2008-04-02
CA2465340A1 (en) 2003-09-25
CN1620730A (zh) 2005-05-25
US7671387B2 (en) 2010-03-02
US20060202238A1 (en) 2006-09-14
JP2003273126A (ja) 2003-09-26
CA2708358A1 (en) 2003-09-25
AU2002354162A1 (en) 2003-09-29
KR20040091130A (ko) 2004-10-27
US20090315082A1 (en) 2009-12-24
EP1487024A4 (en) 2009-10-21
US20080277696A1 (en) 2008-11-13
EP1487024A1 (en) 2004-12-15
US7671388B2 (en) 2010-03-02
JP3925253B2 (ja) 2007-06-06
TWI248680B (en) 2006-02-01
TW200308094A (en) 2003-12-16
US7420232B2 (en) 2008-09-02

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