CA2708358A1 - Lateral junction field effect transistor and method of manufacturing the same - Google Patents

Lateral junction field effect transistor and method of manufacturing the same Download PDF

Info

Publication number
CA2708358A1
CA2708358A1 CA2708358A CA2708358A CA2708358A1 CA 2708358 A1 CA2708358 A1 CA 2708358A1 CA 2708358 A CA2708358 A CA 2708358A CA 2708358 A CA2708358 A CA 2708358A CA 2708358 A1 CA2708358 A1 CA 2708358A1
Authority
CA
Canada
Prior art keywords
semiconductor layer
gate electrode
layer
doped
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2708358A
Other languages
English (en)
French (fr)
Inventor
Kazuhiro Fujikawa
Shin Harada
Kenichi Hirotsu
Satoshi Hatsukawa
Takashi Hoshino
Hiroyuki Matsunami
Tsunenobu Kimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2708358A1 publication Critical patent/CA2708358A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
CA2708358A 2002-03-15 2002-12-02 Lateral junction field effect transistor and method of manufacturing the same Abandoned CA2708358A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-71944 2002-03-15
JP2002071944A JP3925253B2 (ja) 2002-03-15 2002-03-15 横型接合型電界効果トランジスタおよびその製造方法
CA002465340A CA2465340A1 (en) 2002-03-15 2002-12-02 Lateral junction field effect transistor and method of manufacturing the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CA002465340A Division CA2465340A1 (en) 2002-03-15 2002-12-02 Lateral junction field effect transistor and method of manufacturing the same

Publications (1)

Publication Number Publication Date
CA2708358A1 true CA2708358A1 (en) 2003-09-25

Family

ID=28035142

Family Applications (2)

Application Number Title Priority Date Filing Date
CA2708358A Abandoned CA2708358A1 (en) 2002-03-15 2002-12-02 Lateral junction field effect transistor and method of manufacturing the same
CA002465340A Abandoned CA2465340A1 (en) 2002-03-15 2002-12-02 Lateral junction field effect transistor and method of manufacturing the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
CA002465340A Abandoned CA2465340A1 (en) 2002-03-15 2002-12-02 Lateral junction field effect transistor and method of manufacturing the same

Country Status (9)

Country Link
US (4) US7049644B2 (enExample)
EP (1) EP1487024A4 (enExample)
JP (1) JP3925253B2 (enExample)
KR (1) KR100876487B1 (enExample)
CN (1) CN100379029C (enExample)
AU (1) AU2002354162A1 (enExample)
CA (2) CA2708358A1 (enExample)
TW (1) TWI248680B (enExample)
WO (1) WO2003079455A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10325748B4 (de) * 2003-06-06 2008-10-02 Infineon Technologies Ag Sperrschicht-Feldeffekttransistor (JFET) mit Kompensationsstruktur und Feldstoppzone
GB2445313B (en) * 2006-02-14 2011-03-23 Nat Inst Of Advanced Ind Scien Photo field effect transistor and integrated photodetector using same
US7646043B2 (en) * 2006-09-28 2010-01-12 Cree, Inc. Transistors having buried p-type layers coupled to the gate
JP2008282878A (ja) * 2007-05-08 2008-11-20 Rohm Co Ltd 半導体装置およびその製造方法
US7977714B2 (en) * 2007-10-19 2011-07-12 International Business Machines Corporation Wrapped gate junction field effect transistor
US9450050B2 (en) * 2009-11-30 2016-09-20 Alpha And Omega Semiconductor Incorporated Lateral super junctions with high substrate breakdown and build in avalanche clamp diode
US8373208B2 (en) * 2009-11-30 2013-02-12 Alpha And Omega Semiconductor Incorporated Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
KR20130040383A (ko) * 2011-10-14 2013-04-24 주식회사 동부하이텍 고전압 트랜지스터 및 그의 제조방법
JP2013201190A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 接合形電界効果トランジスタ及びその製造方法
JP2015125997A (ja) * 2013-12-25 2015-07-06 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の製造方法。
CN105830219B (zh) * 2013-12-25 2019-01-01 佳能株式会社 成像装置、成像系统及用于制造成像装置的方法
JP6265731B2 (ja) * 2013-12-25 2018-01-24 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の製造方法。
TWI553868B (zh) * 2014-04-03 2016-10-11 世界先進積體電路股份有限公司 半導體裝置與其形成方法
US12048338B2 (en) 2018-03-28 2024-07-30 Ifgcure Holdings, Llc Wearable orthopedic device for lower body posture correction and improved ergonomics
EP3696863B1 (en) * 2019-02-15 2021-10-13 Infineon Technologies Austria AG Lateral transistor device
US11031480B2 (en) * 2019-09-13 2021-06-08 K. Eklund Innovation Semiconductor device, comprising an insulated gate field effect transistor connected in series with a field effect transistor
US11869983B2 (en) * 2020-03-12 2024-01-09 International Business Machines Corporation Low voltage/power junction FET with all-around junction gate
KR102546323B1 (ko) 2021-07-02 2023-06-21 삼성전자주식회사 전계 효과 게이트를 가지는 질화물 반도체 소자
WO2024014510A1 (ja) * 2022-07-14 2024-01-18 国立大学法人京都大学 ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755012A (en) * 1971-03-19 1973-08-28 Motorola Inc Controlled anisotropic etching process for fabricating dielectrically isolated field effect transistor
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
EP0268426A3 (en) 1986-11-17 1989-03-15 Linear Technology Corporation High speed junction field effect transistor for use in bipolar integrated circuits
JPS63131579A (ja) 1986-11-21 1988-06-03 Hitachi Ltd 半導体装置
JPH025533A (ja) 1988-06-24 1990-01-10 Nec Corp 接合型電界効果トランジスタ及びその製造方法
US5264713A (en) 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
US5412224A (en) * 1992-06-08 1995-05-02 Motorola, Inc. Field effect transistor with non-linear transfer characteristic
SE500815C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Dielektriskt isolerad halvledaranordning och förfarande för dess framställning
US5436499A (en) * 1994-03-11 1995-07-25 Spire Corporation High performance GaAs devices and method
US5399887A (en) * 1994-05-03 1995-03-21 Motorola, Inc. Modulation doped field effect transistor
JP2713205B2 (ja) * 1995-02-21 1998-02-16 日本電気株式会社 半導体装置
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
US6005267A (en) * 1995-09-29 1999-12-21 Itt Corporation MES/MIS FET with split-gate RF input
GB2355588A (en) 1996-01-22 2001-04-25 Fuji Electric Co Ltd A vertical field effect transistor having a drift region
US6639277B2 (en) * 1996-11-05 2003-10-28 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6207994B1 (en) * 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
JPH10209174A (ja) * 1997-01-27 1998-08-07 Nikon Corp 接合型電界効果トランジスタ
US5714777A (en) * 1997-02-19 1998-02-03 International Business Machines Corporation Si/SiGe vertical junction field effect transistor
US6246083B1 (en) * 1998-02-24 2001-06-12 Micron Technology, Inc. Vertical gain cell and array for a dynamic random access memory
JP2001274414A (ja) * 2000-03-24 2001-10-05 Toshiba Corp 電力用半導体素子およびその駆動方法
JP3812421B2 (ja) * 2001-06-14 2006-08-23 住友電気工業株式会社 横型接合型電界効果トランジスタ
JP3764401B2 (ja) * 2002-04-18 2006-04-05 株式会社東芝 半導体装置の製造方法

Also Published As

Publication number Publication date
AU2002354162A1 (en) 2003-09-29
US20060202238A1 (en) 2006-09-14
EP1487024A1 (en) 2004-12-15
US20080277696A1 (en) 2008-11-13
CN100379029C (zh) 2008-04-02
TWI248680B (en) 2006-02-01
US7671388B2 (en) 2010-03-02
CN1620730A (zh) 2005-05-25
KR20040091130A (ko) 2004-10-27
US7049644B2 (en) 2006-05-23
KR100876487B1 (ko) 2008-12-31
CA2465340A1 (en) 2003-09-25
US7420232B2 (en) 2008-09-02
EP1487024A4 (en) 2009-10-21
JP2003273126A (ja) 2003-09-26
US7671387B2 (en) 2010-03-02
WO2003079455A1 (en) 2003-09-25
US20090315082A1 (en) 2009-12-24
US20050093017A1 (en) 2005-05-05
JP3925253B2 (ja) 2007-06-06
TW200308094A (en) 2003-12-16

Similar Documents

Publication Publication Date Title
US7671388B2 (en) Lateral junction field effect transistor and method of manufacturing the same
JP7182594B2 (ja) ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法
US11610991B2 (en) Gate trench power semiconductor devices having improved deep shield connection patterns
EP0763259B1 (en) Punch-through field effect transistor
US6075259A (en) Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages
US9698217B1 (en) Semiconductor device
KR102870812B1 (ko) 트렌치 하단 차폐 구조체들을 갖는 트렌치 반도체 디바이스들
US5406094A (en) Quantum interference effect semiconductor device and method of producing the same
US11769828B2 (en) Gate trench power semiconductor devices having improved deep shield connection patterns
KR20020062989A (ko) 접합형 전계 효과 트랜지스터 및 그 제조 방법
KR100398756B1 (ko) 반도체장치 및 그 제조방법
US11158705B2 (en) Method for forming a superjunction transistor device
JP7140642B2 (ja) スイッチング素子
KR20180065769A (ko) SiC MOSFET 전력 반도체 소자 및 그 제조방법
KR20190100598A (ko) 향상된 채널 이동도를 갖는 전력 반도체 및 그 제조 방법
KR102564713B1 (ko) 두꺼운 트렌치 바닥에서 이격된 플로팅 쉴드를 갖는 실리콘카바이드 트렌치 게이트 트랜지스터 및 그 제조 방법
US20250056846A1 (en) Transistor device and method
US20230327026A1 (en) Power semiconductor device with shallow conduction region
KR20190100012A (ko) 다중 에피 성장법으로 구현된 p 쉴드 구조의 전력 반도체 및 그 제조 방법
JP4810736B2 (ja) 横型接合型電界効果トランジスタおよびその製造方法
KR101870824B1 (ko) 전력 반도체 소자 및 그 제조방법
JP2023024802A (ja) スイッチング素子

Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued

Effective date: 20131203