JP3917231B2 - レーザー照射装置およびレーザー照射方法 - Google Patents

レーザー照射装置およびレーザー照射方法 Download PDF

Info

Publication number
JP3917231B2
JP3917231B2 JP03446897A JP3446897A JP3917231B2 JP 3917231 B2 JP3917231 B2 JP 3917231B2 JP 03446897 A JP03446897 A JP 03446897A JP 3446897 A JP3446897 A JP 3446897A JP 3917231 B2 JP3917231 B2 JP 3917231B2
Authority
JP
Japan
Prior art keywords
homogenizer
laser beam
laser
laser light
longitudinal direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03446897A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09275081A (ja
JPH09275081A5 (enExample
Inventor
舜平 山崎
聡 寺本
直人 楠本
幸一郎 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP03446897A priority Critical patent/JP3917231B2/ja
Publication of JPH09275081A publication Critical patent/JPH09275081A/ja
Publication of JPH09275081A5 publication Critical patent/JPH09275081A5/ja
Application granted granted Critical
Publication of JP3917231B2 publication Critical patent/JP3917231B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
    • G02B19/0014—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0905—Dividing and/or superposing multiple light beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0961—Lens arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0966—Cylindrical lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Lasers (AREA)
JP03446897A 1996-02-06 1997-02-03 レーザー照射装置およびレーザー照射方法 Expired - Fee Related JP3917231B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03446897A JP3917231B2 (ja) 1996-02-06 1997-02-03 レーザー照射装置およびレーザー照射方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-44306 1996-02-06
JP4430696 1996-02-06
JP03446897A JP3917231B2 (ja) 1996-02-06 1997-02-03 レーザー照射装置およびレーザー照射方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005204124A Division JP4527018B2 (ja) 1996-02-06 2005-07-13 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH09275081A JPH09275081A (ja) 1997-10-21
JPH09275081A5 JPH09275081A5 (enExample) 2004-12-24
JP3917231B2 true JP3917231B2 (ja) 2007-05-23

Family

ID=12687817

Family Applications (3)

Application Number Title Priority Date Filing Date
JP03446897A Expired - Fee Related JP3917231B2 (ja) 1996-02-06 1997-02-03 レーザー照射装置およびレーザー照射方法
JP2005204124A Expired - Fee Related JP4527018B2 (ja) 1996-02-06 2005-07-13 半導体装置の作製方法
JP2009143839A Expired - Fee Related JP4593671B2 (ja) 1996-02-06 2009-06-17 レーザー照射装置およびレーザー照射方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2005204124A Expired - Fee Related JP4527018B2 (ja) 1996-02-06 2005-07-13 半導体装置の作製方法
JP2009143839A Expired - Fee Related JP4593671B2 (ja) 1996-02-06 2009-06-17 レーザー照射装置およびレーザー照射方法

Country Status (3)

Country Link
US (7) US5900980A (enExample)
JP (3) JP3917231B2 (enExample)
KR (1) KR100376184B1 (enExample)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JPH10253916A (ja) 1997-03-10 1998-09-25 Semiconductor Energy Lab Co Ltd レーザー光学装置
JP4059952B2 (ja) * 1997-03-27 2008-03-12 株式会社半導体エネルギー研究所 レーザー光照射方法
JP4086932B2 (ja) 1997-04-17 2008-05-14 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー処理方法
JP3770999B2 (ja) * 1997-04-21 2006-04-26 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JP3462053B2 (ja) * 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス
US6246524B1 (en) 1998-07-13 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
US6392810B1 (en) 1998-10-05 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device
US6203952B1 (en) 1999-01-14 2001-03-20 3M Innovative Properties Company Imaged article on polymeric substrate
US6393042B1 (en) 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
JP4827276B2 (ja) * 1999-07-05 2011-11-30 株式会社半導体エネルギー研究所 レーザー照射装置、レーザー照射方法及び半導体装置の作製方法
TW487959B (en) * 1999-08-13 2002-05-21 Semiconductor Energy Lab Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
US6567219B1 (en) 1999-08-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
EP1076359B1 (en) * 1999-08-13 2011-02-23 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation device
US7160765B2 (en) * 1999-08-13 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6548370B1 (en) * 1999-08-18 2003-04-15 Semiconductor Energy Laboratory Co., Ltd. Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces
TW494444B (en) * 1999-08-18 2002-07-11 Semiconductor Energy Lab Laser apparatus and laser annealing method
GB9922576D0 (en) * 1999-09-24 1999-11-24 Koninkl Philips Electronics Nv Laser system
WO2001035148A1 (fr) * 1999-11-10 2001-05-17 Hamamatsu Photonics K.K. Lentille optique et systeme optique
US6573162B2 (en) 1999-12-24 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of fabricating a semiconductor device
US6856630B2 (en) * 2000-02-02 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device
US7078321B2 (en) 2000-06-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6563581B1 (en) * 2000-07-14 2003-05-13 Applera Corporation Scanning system and method for scanning a plurality of samples
GB0019454D0 (en) * 2000-08-09 2000-09-27 Stevens Brian T Laser system
TW523791B (en) 2000-09-01 2003-03-11 Semiconductor Energy Lab Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device
US6955956B2 (en) * 2000-12-26 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4614565B2 (ja) * 2001-03-28 2011-01-19 株式会社トプコン レーザ光線照射装置
US7061959B2 (en) * 2001-04-18 2006-06-13 Tcz Gmbh Laser thin film poly-silicon annealing system
US7009140B2 (en) * 2001-04-18 2006-03-07 Cymer, Inc. Laser thin film poly-silicon annealing optical system
US20050259709A1 (en) * 2002-05-07 2005-11-24 Cymer, Inc. Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
US7088758B2 (en) 2001-07-27 2006-08-08 Cymer, Inc. Relax gas discharge laser lithography light source
JP3977038B2 (ja) 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
JP4579217B2 (ja) * 2001-08-31 2010-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
SG143981A1 (en) 2001-08-31 2008-07-29 Semiconductor Energy Lab Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
US20040097103A1 (en) * 2001-11-12 2004-05-20 Yutaka Imai Laser annealing device and thin-film transistor manufacturing method
JP4040934B2 (ja) * 2002-08-30 2008-01-30 浜松ホトニクス株式会社 集光装置
EP1400832B1 (en) * 2002-09-19 2014-10-22 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
JP2004134785A (ja) * 2002-09-19 2004-04-30 Semiconductor Energy Lab Co Ltd ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US7160762B2 (en) * 2002-11-08 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
JP4429586B2 (ja) * 2002-11-08 2010-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
SG129265A1 (en) * 2002-11-29 2007-02-26 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
US7056810B2 (en) * 2002-12-18 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
DE602004020538D1 (de) * 2003-02-28 2009-05-28 Semiconductor Energy Lab Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter.
JP4515034B2 (ja) 2003-02-28 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7524712B2 (en) * 2003-03-07 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus
US7327916B2 (en) * 2003-03-11 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7304005B2 (en) * 2003-03-17 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4619035B2 (ja) * 2003-04-24 2011-01-26 株式会社半導体エネルギー研究所 ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法
SG137674A1 (en) 2003-04-24 2007-12-28 Semiconductor Energy Lab Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7277188B2 (en) * 2003-04-29 2007-10-02 Cymer, Inc. Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
JP4152806B2 (ja) * 2003-05-28 2008-09-17 株式会社半導体エネルギー研究所 レーザ光照射装置
US7208395B2 (en) * 2003-06-26 2007-04-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
US7245802B2 (en) * 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7169630B2 (en) * 2003-09-30 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7374985B2 (en) * 2003-11-20 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
DE102004034253A1 (de) * 2004-07-14 2006-02-09 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co. Kg Vorrichtung für die Beleuchtung einer Fläche
JP4579575B2 (ja) * 2004-05-14 2010-11-10 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置
ATE400911T1 (de) * 2004-06-16 2008-07-15 Univ Danmarks Tekniske Segmentiertes diodenlasersystem
JP4440036B2 (ja) * 2004-08-11 2010-03-24 株式会社ディスコ レーザー加工方法
US7387954B2 (en) * 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
WO2006046495A1 (en) * 2004-10-27 2006-05-04 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
EP1708008B1 (en) * 2005-04-01 2011-08-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradition apparatus
US20060251365A1 (en) * 2005-05-04 2006-11-09 Brewer Donald R Watch fiber optic image guide
US20060250897A1 (en) * 2005-05-04 2006-11-09 Brewer Donald R Analog watch fiber optic image guide
JP2007110064A (ja) 2005-09-14 2007-04-26 Ishikawajima Harima Heavy Ind Co Ltd レーザアニール方法及び装置
WO2007049525A1 (en) 2005-10-26 2007-05-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and manufacturing method of semiconductor device
US7679029B2 (en) * 2005-10-28 2010-03-16 Cymer, Inc. Systems and methods to shape laser light as a line beam for interaction with a substrate having surface variations
US7317179B2 (en) * 2005-10-28 2008-01-08 Cymer, Inc. Systems and methods to shape laser light as a homogeneous line beam for interaction with a film deposited on a substrate
WO2007068245A1 (en) * 2005-12-16 2007-06-21 Danmarks Tekniske Universitet Laser system with segmented diode laser
JP2007214527A (ja) * 2006-01-13 2007-08-23 Ihi Corp レーザアニール方法およびレーザアニール装置
US7563661B2 (en) * 2006-02-02 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
JP5099576B2 (ja) * 2006-02-23 2012-12-19 株式会社Ｉｈｉ 化合物半導体の活性化方法及び装置
WO2007122060A1 (de) * 2006-04-21 2007-11-01 Carl Zeiss Laser Optics Gmbh Anordnung zum herstellen einer randscharfen beleuchtungslinie sowie anordnung zum erhöhen der asymmetrie des strahlparameterprodukts
WO2007141185A2 (en) * 2006-06-09 2007-12-13 Carl Zeiss Laser Optics Gmbh Homogenizer with reduced interference
JP5238167B2 (ja) * 2007-02-15 2013-07-17 株式会社半導体エネルギー研究所 レーザ照射装置及び半導体装置の作製方法
US8148663B2 (en) 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
DE102007044298B3 (de) * 2007-09-17 2009-02-26 Coherent Gmbh Verfahren und Anordnung zum Erzeugen eines Laserstrahls mit einem linienhaften Strahlquerschnitt
DE102007057868B4 (de) * 2007-11-29 2020-02-20 LIMO GmbH Vorrichtung zur Erzeugung einer linienförmigen Intensitätsverteilung
US8432613B2 (en) * 2009-04-21 2013-04-30 Applied Materials, Inc. Multi-stage optical homogenization
US10095016B2 (en) 2011-01-04 2018-10-09 Nlight, Inc. High power laser system
US9036262B2 (en) * 2011-07-13 2015-05-19 Bae Systems Information And Electronic Systems Integration Inc. Beam shaping and control apparatus
US9720244B1 (en) 2011-09-30 2017-08-01 Nlight, Inc. Intensity distribution management system and method in pixel imaging
US8946594B2 (en) * 2011-11-04 2015-02-03 Applied Materials, Inc. Optical design for line generation using microlens array
KR20140036593A (ko) * 2012-09-17 2014-03-26 삼성디스플레이 주식회사 레이저 가공 장치
US9310248B2 (en) 2013-03-14 2016-04-12 Nlight, Inc. Active monitoring of multi-laser systems
DE102018211409B4 (de) 2018-07-10 2021-02-18 Laserline GmbH Strahlformende Laseroptik und Lasersystem

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313976B1 (enExample) * 1969-08-04 1978-05-13
US4733944A (en) * 1986-01-24 1988-03-29 Xmr, Inc. Optical beam integration system
US4943733A (en) * 1987-05-15 1990-07-24 Nikon Corporation Projection optical apparatus capable of measurement and compensation of distortion affecting reticle/wafer alignment
JPH01319727A (ja) * 1988-06-22 1989-12-26 Sony Corp 光学装置
JP2657957B2 (ja) * 1990-04-27 1997-09-30 キヤノン株式会社 投影装置及び光照射方法
US5097291A (en) * 1991-04-22 1992-03-17 Nikon Corporation Energy amount control device
US5215595A (en) * 1991-08-08 1993-06-01 Popino James P Oil removal from animals, fish and birds using viscoelasticity
US5657138A (en) * 1991-10-13 1997-08-12 Lewis; Aaron Generating defined structures on materials using combined optical technologies for transforming the processing beam
DE4220705C2 (de) * 1992-06-24 2003-03-13 Lambda Physik Ag Vorrichtung zum Aufteilen eines Lichtstrahles in homogene Teilstrahlen
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JPH06232069A (ja) * 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH07307304A (ja) * 1994-05-13 1995-11-21 Semiconductor Energy Lab Co Ltd 半導体デバイスのレーザー処理方法
JPH0851077A (ja) * 1994-05-30 1996-02-20 Sanyo Electric Co Ltd 多結晶半導体の製造方法及び画像表示デバイスの製造方法及び多結晶半導体の製造装置
TW406861U (en) 1994-07-28 2000-09-21 Semiconductor Energy Lab Laser processing system
US5587330A (en) * 1994-10-20 1996-12-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US5756364A (en) 1994-11-29 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Laser processing method of semiconductor device using a catalyst
US5854803A (en) 1995-01-12 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
TW297138B (enExample) 1995-05-31 1997-02-01 Handotai Energy Kenkyusho Kk
DE19520187C1 (de) * 1995-06-01 1996-09-12 Microlas Lasersystem Gmbh Optik zum Herstellen einer scharfen Beleuchtungslinie aus einem Laserstrahl
KR100303111B1 (ko) 1995-07-19 2001-12-17 순페이 야마자끼 반도체 장치 제조 방법 및 제조 장치
JP3883592B2 (ja) 1995-08-07 2007-02-21 株式会社半導体エネルギー研究所 レーザ照射方法および半導体作製方法および半導体装置の作製方法および液晶電気光学装置の作製方法
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JP3301054B2 (ja) * 1996-02-13 2002-07-15 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JPH10244392A (ja) * 1997-03-04 1998-09-14 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP4059952B2 (ja) * 1997-03-27 2008-03-12 株式会社半導体エネルギー研究所 レーザー光照射方法
JP3770999B2 (ja) * 1997-04-21 2006-04-26 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
US5987799A (en) * 1998-03-12 1999-11-23 Dedeaux; Tina M. Primitive weapon muzzle loader/unloader device

Also Published As

Publication number Publication date
JP4593671B2 (ja) 2010-12-08
US6215595B1 (en) 2001-04-10
JPH09275081A (ja) 1997-10-21
US20060228837A1 (en) 2006-10-12
JP2009206531A (ja) 2009-09-10
US6157492A (en) 2000-12-05
US20030202251A1 (en) 2003-10-30
US7371620B2 (en) 2008-05-13
JP4527018B2 (ja) 2010-08-18
JP2006024952A (ja) 2006-01-26
US20020089755A1 (en) 2002-07-11
US20010015854A1 (en) 2001-08-23
US6388812B2 (en) 2002-05-14
US5900980A (en) 1999-05-04
KR100376184B1 (ko) 2003-06-11
US7071035B2 (en) 2006-07-04
US6587277B2 (en) 2003-07-01

Similar Documents

Publication Publication Date Title
JP3917231B2 (ja) レーザー照射装置およびレーザー照射方法
KR100461344B1 (ko) 레이저조사장치
KR100506956B1 (ko) 반도체장치형성방법및반도체장치제조방법
KR101019137B1 (ko) 레이저 조사방법 및 레이저 조사장치, 및 반도체장치의제조방법
KR100913211B1 (ko) 반도체장치 및 반도체장치 제조장치
KR100326887B1 (ko) 디스플레이 장치 제조 방법
JPH08172049A (ja) 半導体装置およびその作製方法
JPH09260681A (ja) 半導体装置の作製方法
JP3841910B2 (ja) 半導体装置の作製方法
JP3813269B2 (ja) レーザー照射システム
JP5244832B2 (ja) 半導体装置の作製方法
JP4223470B2 (ja) ピッチｘの決定方法、半導体装置の作製方法
JPH09289325A (ja) 半導体装置およびその作製方法
JP4112221B2 (ja) アクティブマトリクス型表示装置
JP3971152B2 (ja) 薄膜トランジスタの作製方法
JP2006216971A (ja) 半導体装置の作製方法
JP2006216980A (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040123

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040123

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050425

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050517

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050713

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060322

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060518

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061219

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061225

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070206

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070208

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100216

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100216

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110216

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110216

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120216

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120216

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130216

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130216

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140216

Year of fee payment: 7

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees