JP3901432B2 - 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法 - Google Patents

強誘電体キャパシタを有するメモリセルアレイおよびその製造方法 Download PDF

Info

Publication number
JP3901432B2
JP3901432B2 JP2000251436A JP2000251436A JP3901432B2 JP 3901432 B2 JP3901432 B2 JP 3901432B2 JP 2000251436 A JP2000251436 A JP 2000251436A JP 2000251436 A JP2000251436 A JP 2000251436A JP 3901432 B2 JP3901432 B2 JP 3901432B2
Authority
JP
Japan
Prior art keywords
signal electrode
layer
ferroelectric
region
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000251436A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002064187A (ja
JP2002064187A5 (enExample
Inventor
栄治 名取
和正 長谷川
幸一 小口
尚男 西川
達也 下田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2000251436A priority Critical patent/JP3901432B2/ja
Priority to US09/931,915 priority patent/US6617627B2/en
Priority to PCT/JP2001/007143 priority patent/WO2002017403A1/ja
Priority to EP01958382A priority patent/EP1263049A4/en
Priority to CN01802501.3A priority patent/CN1246905C/zh
Publication of JP2002064187A publication Critical patent/JP2002064187A/ja
Priority to US10/618,688 priority patent/US6913937B2/en
Publication of JP2002064187A5 publication Critical patent/JP2002064187A5/ja
Application granted granted Critical
Publication of JP3901432B2 publication Critical patent/JP3901432B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
JP2000251436A 2000-08-22 2000-08-22 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法 Expired - Fee Related JP3901432B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000251436A JP3901432B2 (ja) 2000-08-22 2000-08-22 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法
US09/931,915 US6617627B2 (en) 2000-08-22 2001-08-20 Memory cell array having ferroelectric capacitors, method of fabricating the same, and ferroelectric memory device.
EP01958382A EP1263049A4 (en) 2000-08-22 2001-08-21 FERROELECTRIC CAPACITOR MEMORY CELL ARRAY, METHOD FOR MANUFACTURING THE SAME, AND FERROELECTRIC MEMORY DEVICE
CN01802501.3A CN1246905C (zh) 2000-08-22 2001-08-21 存储单元阵列及其制造方法以及强电介质存储装置
PCT/JP2001/007143 WO2002017403A1 (en) 2000-08-22 2001-08-21 Memory cell array with ferroelectric capacitor, method for manufacturing the same, and ferroelectric memory device
US10/618,688 US6913937B2 (en) 2000-08-22 2003-07-15 Memory cell array having ferroelectric capacity, method of manufacturing the same and ferroelectric memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000251436A JP3901432B2 (ja) 2000-08-22 2000-08-22 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2002064187A JP2002064187A (ja) 2002-02-28
JP2002064187A5 JP2002064187A5 (enExample) 2006-10-26
JP3901432B2 true JP3901432B2 (ja) 2007-04-04

Family

ID=18740844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000251436A Expired - Fee Related JP3901432B2 (ja) 2000-08-22 2000-08-22 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法

Country Status (5)

Country Link
US (2) US6617627B2 (enExample)
EP (1) EP1263049A4 (enExample)
JP (1) JP3901432B2 (enExample)
CN (1) CN1246905C (enExample)
WO (1) WO2002017403A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3901432B2 (ja) * 2000-08-22 2007-04-04 セイコーエプソン株式会社 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法
US6858482B2 (en) * 2002-04-10 2005-02-22 Micron Technology, Inc. Method of manufacture of programmable switching circuits and memory cells employing a glass layer
JP2007525337A (ja) * 2003-12-22 2007-09-06 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 強誘電性ポリマー層のパターニング方法
US20050156217A1 (en) * 2004-01-13 2005-07-21 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and method for fabricating the same
JP2005285190A (ja) * 2004-03-29 2005-10-13 Sanyo Electric Co Ltd メモリ
JP2005327919A (ja) * 2004-05-14 2005-11-24 Seiko Epson Corp デバイスの製造方法及びデバイス、電気光学素子、プリンタ
US7253502B2 (en) * 2004-07-28 2007-08-07 Endicott Interconnect Technologies, Inc. Circuitized substrate with internal organic memory device, electrical assembly utilizing same, and information handling system utilizing same
DE102005017071B4 (de) 2004-12-29 2011-09-15 Hynix Semiconductor Inc. Schwebe-Gate-Speichereinrichtung
NO322202B1 (no) * 2004-12-30 2006-08-28 Thin Film Electronics Asa Fremgangsmate i fremstillingen av en elektronisk innretning
NO324539B1 (no) * 2005-06-14 2007-11-19 Thin Film Electronics Asa Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning
GB2436893A (en) * 2006-03-31 2007-10-10 Seiko Epson Corp Inkjet printing of cross point passive matrix devices
GB0809840D0 (en) * 2008-05-30 2008-07-09 Univ Catholique Louvain Ferroelectric organic memories with ultra-low voltage operation
US8357582B2 (en) * 2010-11-01 2013-01-22 Micron Technology, Inc. Methods of forming electrical components and memory cells
TWI463641B (zh) * 2012-02-24 2014-12-01 Nat Applied Res Laboratories Ultra - high density resistive memory structure and its manufacturing method
DE102020108366A1 (de) 2020-03-26 2021-09-30 Bayerische Motoren Werke Aktiengesellschaft Informationsspeicher und Verfahren zum Programmieren und Auslesen von Informationen

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
US5530667A (en) * 1991-03-01 1996-06-25 Olympus Optical Co., Ltd. Ferroelectric memory device
JP3480110B2 (ja) 1995-03-15 2003-12-15 ソニー株式会社 半導体メモリ及びその作製方法
JP3176840B2 (ja) * 1996-03-15 2001-06-18 富士通株式会社 半導体装置の製造方法
US5874364A (en) * 1995-03-27 1999-02-23 Fujitsu Limited Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
WO1997007429A1 (en) * 1995-08-18 1997-02-27 President And Fellows Of Harvard College Self-assembled monolayer directed patterning of surfaces
JPH0991970A (ja) 1995-09-26 1997-04-04 Olympus Optical Co Ltd 非破壊型強誘電体メモリ及びその駆動方法
JPH09102587A (ja) 1995-10-05 1997-04-15 Olympus Optical Co Ltd 強誘電体薄膜素子
CN1142587C (zh) * 1996-04-19 2004-03-17 松下电器产业株式会社 半导体器件
KR100370416B1 (ko) 1996-10-31 2003-04-08 삼성전기주식회사 고밀도 데이터의 기록/재생을 위한 부호화/복호화 방법 및 그에 따른 장치
KR100413805B1 (ko) * 1996-10-31 2004-06-26 삼성전자주식회사 누설전류를이용한매트릭스형다진법강유전체랜덤액세서메모리
NO309500B1 (no) 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
US6316801B1 (en) * 1998-03-04 2001-11-13 Nec Corporation Semiconductor device having capacitive element structure and multilevel interconnection structure and method of fabricating the same
US5963466A (en) * 1998-04-13 1999-10-05 Radiant Technologies, Inc. Ferroelectric memory having a common plate electrode
US6239028B1 (en) * 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6174735B1 (en) * 1998-10-23 2001-01-16 Ramtron International Corporation Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation
WO2000075992A1 (en) 1999-06-04 2000-12-14 Seiko Epson Corporation Ferroelectric memory device and method of manufacturing the same
JP3901432B2 (ja) * 2000-08-22 2007-04-04 セイコーエプソン株式会社 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法

Also Published As

Publication number Publication date
US20040014247A1 (en) 2004-01-22
CN1388990A (zh) 2003-01-01
US6913937B2 (en) 2005-07-05
JP2002064187A (ja) 2002-02-28
WO2002017403A1 (en) 2002-02-28
EP1263049A4 (en) 2005-08-31
US20020031005A1 (en) 2002-03-14
US6617627B2 (en) 2003-09-09
CN1246905C (zh) 2006-03-22
EP1263049A1 (en) 2002-12-04

Similar Documents

Publication Publication Date Title
JP3940883B2 (ja) 強誘電体メモリ装置の製造方法
JP3901432B2 (ja) 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法
JP4045406B2 (ja) 強誘電体メモリ素子及びその製造方法
JPWO2000075992A1 (ja) 強誘電体メモリ素子及びその製造方法
JP2005327920A (ja) デバイスの製造方法及びデバイス、電気光学素子
JP2002198496A (ja) 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置
JP4031619B2 (ja) 強誘電体膜、強誘電体膜の製造方法、強誘電体キャパシタ、強誘電体キャパシタの製造方法、強誘電体メモリ装置、強誘電体メモリ装置の製造方法
JP3998916B2 (ja) 強誘電体膜、強誘電体膜の製造方法、強誘電体キャパシタ、強誘電体キャパシタの製造方法、強誘電体メモリ装置および強誘電体メモリ装置の製造方法
JP2005510879A (ja) １つ以上のメモリ装置付きマトリクス・アドレッサブル機器
JP4038641B2 (ja) 強誘電体メモリ素子の製造方法
JP4466876B2 (ja) 強誘電体メモリ素子の製造方法
JP4400750B2 (ja) 強誘電体メモリ素子の製造方法
JP4400749B2 (ja) 強誘電体メモリ素子の製造方法
JP2007096346A (ja) 強誘電体キャパシタおよびその製造方法
JP2003282838A (ja) 強誘電体キャパシタおよびその製造方法、メモリセルアレイ、誘電体キャパシタの製造方法、ならびに、メモリ装置
JP2003243626A (ja) 強誘電体メモリ装置の製造方法
JP2001168293A (ja) メモリデバイス及びその製造方法並びに電子機器
JP2003243623A (ja) 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法ならびに強誘電体メモリ装置
JP2010129962A (ja) 半導体記憶装置およびその製造方法
JP2003282834A (ja) キャパシタ、強誘電体メモリおよび電子機器
JP2004281537A (ja) 強誘電体キャパシタとその製造方法および強誘電体キャパシタを含む強誘電体メモリ装置
JP2003243624A (ja) 強誘電体メモリ装置の製造方法
JP2004288812A (ja) クロスポイント型強誘電体メモリ

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20051220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060908

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061011

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061121

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20061213

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20061226

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 3901432

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100112

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110112

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110112

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120112

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120112

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130112

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130112

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140112

Year of fee payment: 7

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees