JP2002064187A5 - - Google Patents
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- Publication number
- JP2002064187A5 JP2002064187A5 JP2000251436A JP2000251436A JP2002064187A5 JP 2002064187 A5 JP2002064187 A5 JP 2002064187A5 JP 2000251436 A JP2000251436 A JP 2000251436A JP 2000251436 A JP2000251436 A JP 2000251436A JP 2002064187 A5 JP2002064187 A5 JP 2002064187A5
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- JP
- Japan
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Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000251436A JP3901432B2 (ja) | 2000-08-22 | 2000-08-22 | 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法 |
| US09/931,915 US6617627B2 (en) | 2000-08-22 | 2001-08-20 | Memory cell array having ferroelectric capacitors, method of fabricating the same, and ferroelectric memory device. |
| PCT/JP2001/007143 WO2002017403A1 (en) | 2000-08-22 | 2001-08-21 | Memory cell array with ferroelectric capacitor, method for manufacturing the same, and ferroelectric memory device |
| CN01802501.3A CN1246905C (zh) | 2000-08-22 | 2001-08-21 | 存储单元阵列及其制造方法以及强电介质存储装置 |
| EP01958382A EP1263049A4 (en) | 2000-08-22 | 2001-08-21 | FERROELECTRIC CAPACITOR MEMORY CELL ARRAY, METHOD FOR MANUFACTURING THE SAME, AND FERROELECTRIC MEMORY DEVICE |
| US10/618,688 US6913937B2 (en) | 2000-08-22 | 2003-07-15 | Memory cell array having ferroelectric capacity, method of manufacturing the same and ferroelectric memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000251436A JP3901432B2 (ja) | 2000-08-22 | 2000-08-22 | 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002064187A JP2002064187A (ja) | 2002-02-28 |
| JP2002064187A5 true JP2002064187A5 (enExample) | 2006-10-26 |
| JP3901432B2 JP3901432B2 (ja) | 2007-04-04 |
Family
ID=18740844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000251436A Expired - Fee Related JP3901432B2 (ja) | 2000-08-22 | 2000-08-22 | 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6617627B2 (enExample) |
| EP (1) | EP1263049A4 (enExample) |
| JP (1) | JP3901432B2 (enExample) |
| CN (1) | CN1246905C (enExample) |
| WO (1) | WO2002017403A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3901432B2 (ja) * | 2000-08-22 | 2007-04-04 | セイコーエプソン株式会社 | 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法 |
| US6858482B2 (en) * | 2002-04-10 | 2005-02-22 | Micron Technology, Inc. | Method of manufacture of programmable switching circuits and memory cells employing a glass layer |
| CN100437902C (zh) * | 2003-12-22 | 2008-11-26 | 皇家飞利浦电子股份有限公司 | 铁电聚合物层的构图方法 |
| US20050156217A1 (en) * | 2004-01-13 | 2005-07-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device and method for fabricating the same |
| JP2005285190A (ja) * | 2004-03-29 | 2005-10-13 | Sanyo Electric Co Ltd | メモリ |
| JP2005327919A (ja) * | 2004-05-14 | 2005-11-24 | Seiko Epson Corp | デバイスの製造方法及びデバイス、電気光学素子、プリンタ |
| US7253502B2 (en) * | 2004-07-28 | 2007-08-07 | Endicott Interconnect Technologies, Inc. | Circuitized substrate with internal organic memory device, electrical assembly utilizing same, and information handling system utilizing same |
| DE102005017071B4 (de) | 2004-12-29 | 2011-09-15 | Hynix Semiconductor Inc. | Schwebe-Gate-Speichereinrichtung |
| NO322202B1 (no) * | 2004-12-30 | 2006-08-28 | Thin Film Electronics Asa | Fremgangsmate i fremstillingen av en elektronisk innretning |
| NO324539B1 (no) * | 2005-06-14 | 2007-11-19 | Thin Film Electronics Asa | Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning |
| GB2436893A (en) * | 2006-03-31 | 2007-10-10 | Seiko Epson Corp | Inkjet printing of cross point passive matrix devices |
| GB0809840D0 (en) * | 2008-05-30 | 2008-07-09 | Univ Catholique Louvain | Ferroelectric organic memories with ultra-low voltage operation |
| US8357582B2 (en) | 2010-11-01 | 2013-01-22 | Micron Technology, Inc. | Methods of forming electrical components and memory cells |
| TWI463641B (zh) * | 2012-02-24 | 2014-12-01 | Nat Applied Res Laboratories | Ultra - high density resistive memory structure and its manufacturing method |
| DE102020108366A1 (de) | 2020-03-26 | 2021-09-30 | Bayerische Motoren Werke Aktiengesellschaft | Informationsspeicher und Verfahren zum Programmieren und Auslesen von Informationen |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2788265B2 (ja) | 1988-07-08 | 1998-08-20 | オリンパス光学工業株式会社 | 強誘電体メモリ及びその駆動方法，製造方法 |
| US5530667A (en) * | 1991-03-01 | 1996-06-25 | Olympus Optical Co., Ltd. | Ferroelectric memory device |
| JP3480110B2 (ja) | 1995-03-15 | 2003-12-15 | ソニー株式会社 | 半導体メモリ及びその作製方法 |
| JP3176840B2 (ja) * | 1996-03-15 | 2001-06-18 | 富士通株式会社 | 半導体装置の製造方法 |
| US5874364A (en) * | 1995-03-27 | 1999-02-23 | Fujitsu Limited | Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same |
| US6518168B1 (en) * | 1995-08-18 | 2003-02-11 | President And Fellows Of Harvard College | Self-assembled monolayer directed patterning of surfaces |
| JPH0991970A (ja) | 1995-09-26 | 1997-04-04 | Olympus Optical Co Ltd | 非破壊型強誘電体メモリ及びその駆動方法 |
| JPH09102587A (ja) | 1995-10-05 | 1997-04-15 | Olympus Optical Co Ltd | 強誘電体薄膜素子 |
| US6163043A (en) * | 1996-04-19 | 2000-12-19 | Matsushita Electronics Corp. | Semiconductor device |
| KR100413805B1 (ko) * | 1996-10-31 | 2004-06-26 | 삼성전자주식회사 | 누설전류를이용한매트릭스형다진법강유전체랜덤액세서메모리 |
| KR100370416B1 (ko) | 1996-10-31 | 2003-04-08 | 삼성전기주식회사 | 고밀도 데이터의 기록/재생을 위한 부호화/복호화 방법 및 그에 따른 장치 |
| NO309500B1 (no) | 1997-08-15 | 2001-02-05 | Thin Film Electronics Asa | Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme |
| US6316801B1 (en) * | 1998-03-04 | 2001-11-13 | Nec Corporation | Semiconductor device having capacitive element structure and multilevel interconnection structure and method of fabricating the same |
| US5963466A (en) * | 1998-04-13 | 1999-10-05 | Radiant Technologies, Inc. | Ferroelectric memory having a common plate electrode |
| US6239028B1 (en) * | 1998-09-03 | 2001-05-29 | Micron Technology, Inc. | Methods for forming iridium-containing films on substrates |
| US6174735B1 (en) * | 1998-10-23 | 2001-01-16 | Ramtron International Corporation | Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation |
| JP4045406B2 (ja) | 1999-06-04 | 2008-02-13 | セイコーエプソン株式会社 | 強誘電体メモリ素子及びその製造方法 |
| JP3901432B2 (ja) * | 2000-08-22 | 2007-04-04 | セイコーエプソン株式会社 | 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法 |
-
2000
- 2000-08-22 JP JP2000251436A patent/JP3901432B2/ja not_active Expired - Fee Related
-
2001
- 2001-08-20 US US09/931,915 patent/US6617627B2/en not_active Expired - Lifetime
- 2001-08-21 WO PCT/JP2001/007143 patent/WO2002017403A1/ja not_active Ceased
- 2001-08-21 EP EP01958382A patent/EP1263049A4/en not_active Withdrawn
- 2001-08-21 CN CN01802501.3A patent/CN1246905C/zh not_active Expired - Fee Related
-
2003
- 2003-07-15 US US10/618,688 patent/US6913937B2/en not_active Expired - Lifetime