CN1246905C - 存储单元阵列及其制造方法以及强电介质存储装置 - Google Patents

存储单元阵列及其制造方法以及强电介质存储装置 Download PDF

Info

Publication number
CN1246905C
CN1246905C CN01802501.3A CN01802501A CN1246905C CN 1246905 C CN1246905 C CN 1246905C CN 01802501 A CN01802501 A CN 01802501A CN 1246905 C CN1246905 C CN 1246905C
Authority
CN
China
Prior art keywords
signal electrode
layer
ferroelectric
memory cell
cell array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN01802501.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN1388990A (zh
Inventor
名取荣治
长谷川和正
小口幸一
西川尚男
下田达也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN1388990A publication Critical patent/CN1388990A/zh
Application granted granted Critical
Publication of CN1246905C publication Critical patent/CN1246905C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
CN01802501.3A 2000-08-22 2001-08-21 存储单元阵列及其制造方法以及强电介质存储装置 Expired - Fee Related CN1246905C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000251436A JP3901432B2 (ja) 2000-08-22 2000-08-22 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法
JP251436/00 2000-08-22

Publications (2)

Publication Number Publication Date
CN1388990A CN1388990A (zh) 2003-01-01
CN1246905C true CN1246905C (zh) 2006-03-22

Family

ID=18740844

Family Applications (1)

Application Number Title Priority Date Filing Date
CN01802501.3A Expired - Fee Related CN1246905C (zh) 2000-08-22 2001-08-21 存储单元阵列及其制造方法以及强电介质存储装置

Country Status (5)

Country Link
US (2) US6617627B2 (enExample)
EP (1) EP1263049A4 (enExample)
JP (1) JP3901432B2 (enExample)
CN (1) CN1246905C (enExample)
WO (1) WO2002017403A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3901432B2 (ja) * 2000-08-22 2007-04-04 セイコーエプソン株式会社 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法
US6858482B2 (en) * 2002-04-10 2005-02-22 Micron Technology, Inc. Method of manufacture of programmable switching circuits and memory cells employing a glass layer
JP2007525337A (ja) * 2003-12-22 2007-09-06 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 強誘電性ポリマー層のパターニング方法
US20050156217A1 (en) * 2004-01-13 2005-07-21 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and method for fabricating the same
JP2005285190A (ja) * 2004-03-29 2005-10-13 Sanyo Electric Co Ltd メモリ
JP2005327919A (ja) * 2004-05-14 2005-11-24 Seiko Epson Corp デバイスの製造方法及びデバイス、電気光学素子、プリンタ
US7253502B2 (en) * 2004-07-28 2007-08-07 Endicott Interconnect Technologies, Inc. Circuitized substrate with internal organic memory device, electrical assembly utilizing same, and information handling system utilizing same
DE102005017071B4 (de) 2004-12-29 2011-09-15 Hynix Semiconductor Inc. Schwebe-Gate-Speichereinrichtung
NO322202B1 (no) * 2004-12-30 2006-08-28 Thin Film Electronics Asa Fremgangsmate i fremstillingen av en elektronisk innretning
NO324539B1 (no) * 2005-06-14 2007-11-19 Thin Film Electronics Asa Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning
GB2436893A (en) * 2006-03-31 2007-10-10 Seiko Epson Corp Inkjet printing of cross point passive matrix devices
GB0809840D0 (en) * 2008-05-30 2008-07-09 Univ Catholique Louvain Ferroelectric organic memories with ultra-low voltage operation
US8357582B2 (en) * 2010-11-01 2013-01-22 Micron Technology, Inc. Methods of forming electrical components and memory cells
TWI463641B (zh) * 2012-02-24 2014-12-01 Nat Applied Res Laboratories Ultra - high density resistive memory structure and its manufacturing method
DE102020108366A1 (de) 2020-03-26 2021-09-30 Bayerische Motoren Werke Aktiengesellschaft Informationsspeicher und Verfahren zum Programmieren und Auslesen von Informationen

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
US5530667A (en) * 1991-03-01 1996-06-25 Olympus Optical Co., Ltd. Ferroelectric memory device
JP3480110B2 (ja) 1995-03-15 2003-12-15 ソニー株式会社 半導体メモリ及びその作製方法
JP3176840B2 (ja) * 1996-03-15 2001-06-18 富士通株式会社 半導体装置の製造方法
US5874364A (en) * 1995-03-27 1999-02-23 Fujitsu Limited Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
WO1997007429A1 (en) * 1995-08-18 1997-02-27 President And Fellows Of Harvard College Self-assembled monolayer directed patterning of surfaces
JPH0991970A (ja) 1995-09-26 1997-04-04 Olympus Optical Co Ltd 非破壊型強誘電体メモリ及びその駆動方法
JPH09102587A (ja) 1995-10-05 1997-04-15 Olympus Optical Co Ltd 強誘電体薄膜素子
CN1142587C (zh) * 1996-04-19 2004-03-17 松下电器产业株式会社 半导体器件
KR100370416B1 (ko) 1996-10-31 2003-04-08 삼성전기주식회사 고밀도 데이터의 기록/재생을 위한 부호화/복호화 방법 및 그에 따른 장치
KR100413805B1 (ko) * 1996-10-31 2004-06-26 삼성전자주식회사 누설전류를이용한매트릭스형다진법강유전체랜덤액세서메모리
NO309500B1 (no) 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
US6316801B1 (en) * 1998-03-04 2001-11-13 Nec Corporation Semiconductor device having capacitive element structure and multilevel interconnection structure and method of fabricating the same
US5963466A (en) * 1998-04-13 1999-10-05 Radiant Technologies, Inc. Ferroelectric memory having a common plate electrode
US6239028B1 (en) * 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6174735B1 (en) * 1998-10-23 2001-01-16 Ramtron International Corporation Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation
WO2000075992A1 (en) 1999-06-04 2000-12-14 Seiko Epson Corporation Ferroelectric memory device and method of manufacturing the same
JP3901432B2 (ja) * 2000-08-22 2007-04-04 セイコーエプソン株式会社 強誘電体キャパシタを有するメモリセルアレイおよびその製造方法

Also Published As

Publication number Publication date
US20040014247A1 (en) 2004-01-22
CN1388990A (zh) 2003-01-01
US6913937B2 (en) 2005-07-05
JP2002064187A (ja) 2002-02-28
WO2002017403A1 (en) 2002-02-28
EP1263049A4 (en) 2005-08-31
US20020031005A1 (en) 2002-03-14
JP3901432B2 (ja) 2007-04-04
US6617627B2 (en) 2003-09-09
EP1263049A1 (en) 2002-12-04

Similar Documents

Publication Publication Date Title
CN1216425C (zh) 强电介质存储装置及其制造方法以及混载装置
CN1246905C (zh) 存储单元阵列及其制造方法以及强电介质存储装置
CN1319254A (zh) 强电介质存储元件及其制造方法
CN1296210C (zh) 压电元件和液体排放记录头的结构、及其制造方法
CN100337333C (zh) 非易失性触发器
CN1197158C (zh) 半导体存储装置及其制造方法
CN1426602A (zh) 强电介质存储装置
CN1577845A (zh) 磁存储器装置和磁存储器装置的制造方法
CN1165925C (zh) 薄膜电容器及其制造方法
CN1251228C (zh) 薄膜压电体元件及其制造方法以及使用该薄膜压电体元件的致动器装置
CN1642387A (zh) 形成图案的方法和装置、器件和电子装置
CN1379472A (zh) 半导体存储装置
CN1525553A (zh) 半导体装置的制造方法
CN1514808A (zh) 压电体及其制造方法、具有该压电体的压电元件、喷墨头及喷墨式记录装置
CN1314123C (zh) 半导体装置及其制造方法
CN1976011A (zh) 半导体装置的制造方法
CN1245768C (zh) 薄膜压电体元件及其制造方法并致动器
CN1929038A (zh) 复合氧化物层压体、复合氧化物层压体的制造方法、装置
CN1684260A (zh) 金属薄膜及其制造方法、电介质电容器及其制造方法及半导体装置
CN1610116A (zh) 强电介质材料、其膜、电容器及它们的制法、强电介质存储器
CN1807346A (zh) 前驱体组合物及其制造方法、喷墨涂布用墨液
CN1426584A (zh) 强电介质存储装置及对由强电介质电容器构成的存储单元的操作方法
CN1873926A (zh) 铁电体层的制造方法及电子设备的制造方法
CN1300806C (zh) 电阻元件及其制造方法
CN1832176A (zh) 半导体器件及其操作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060322

Termination date: 20180821

CF01 Termination of patent right due to non-payment of annual fee