CN1314123C - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN1314123C CN1314123C CNB2003101248364A CN200310124836A CN1314123C CN 1314123 C CN1314123 C CN 1314123C CN B2003101248364 A CNB2003101248364 A CN B2003101248364A CN 200310124836 A CN200310124836 A CN 200310124836A CN 1314123 C CN1314123 C CN 1314123C
- Authority
- CN
- China
- Prior art keywords
- mentioned
- memory area
- cell
- lower electrode
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 273
- 238000000034 method Methods 0.000 title claims description 62
- 239000000758 substrate Substances 0.000 claims abstract description 182
- 239000003990 capacitor Substances 0.000 claims description 258
- 239000011229 interlayer Substances 0.000 claims description 106
- 239000010410 layer Substances 0.000 claims description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 59
- 238000009792 diffusion process Methods 0.000 claims description 59
- 229910052710 silicon Inorganic materials 0.000 claims description 59
- 239000010703 silicon Substances 0.000 claims description 59
- 238000004519 manufacturing process Methods 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 238000009825 accumulation Methods 0.000 abstract description 3
- 230000000295 complement effect Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 58
- 230000014759 maintenance of location Effects 0.000 description 31
- 238000005457 optimization Methods 0.000 description 20
- 230000005540 biological transmission Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000012467 final product Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000003701 mechanical milling Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 235000014347 soups Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- OOMSNAKIPQWBDX-UHFFFAOYSA-N [Si]=O.[P] Chemical compound [Si]=O.[P] OOMSNAKIPQWBDX-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- POFWRMVFWIJXHP-UHFFFAOYSA-N n-benzyl-9-(oxan-2-yl)purin-6-amine Chemical compound C=1C=CC=CC=1CNC(C=1N=C2)=NC=NC=1N2C1CCCCO1 POFWRMVFWIJXHP-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003023542 | 2003-01-31 | ||
JP2003023542A JP3944455B2 (ja) | 2003-01-31 | 2003-01-31 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1519944A CN1519944A (zh) | 2004-08-11 |
CN1314123C true CN1314123C (zh) | 2007-05-02 |
Family
ID=32767575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101248364A Expired - Lifetime CN1314123C (zh) | 2003-01-31 | 2003-12-31 | 半导体装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (3) | US6956261B2 (zh) |
JP (1) | JP3944455B2 (zh) |
CN (1) | CN1314123C (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060113631A1 (en) * | 2004-11-26 | 2006-06-01 | Wei-Chun Yang | Structure of embedded capacitors and fabrication method thereof |
JP2007149827A (ja) * | 2005-11-25 | 2007-06-14 | Fujitsu Ltd | 電子部品製造方法および電子部品 |
US7612397B2 (en) * | 2006-11-10 | 2009-11-03 | Sharp Kabushiki Kaisha | Memory cell having first and second capacitors with electrodes acting as control gates for nonvolatile memory transistors |
US7816762B2 (en) * | 2007-08-07 | 2010-10-19 | International Business Machines Corporation | On-chip decoupling capacitor structures |
US20100190676A1 (en) * | 2008-07-22 | 2010-07-29 | Ecolab Inc. | Composition for enhanced removal of blood soils |
US7903457B2 (en) * | 2008-08-19 | 2011-03-08 | Macronix International Co., Ltd. | Multiple phase change materials in an integrated circuit for system on a chip application |
US8278691B2 (en) * | 2008-12-11 | 2012-10-02 | Micron Technology, Inc. | Low power memory device with JFET device structures |
WO2012002186A1 (en) | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2012256821A (ja) | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
US8946666B2 (en) | 2011-06-23 | 2015-02-03 | Macronix International Co., Ltd. | Ge-Rich GST-212 phase change memory materials |
US8497540B2 (en) | 2011-08-30 | 2013-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Capacitor and method of forming same |
US8932901B2 (en) | 2011-10-31 | 2015-01-13 | Macronix International Co., Ltd. | Stressed phase change materials |
US9076505B2 (en) | 2011-12-09 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
TWI549229B (zh) | 2014-01-24 | 2016-09-11 | 旺宏電子股份有限公司 | 應用於系統單晶片之記憶體裝置內的多相變化材料 |
US9590059B2 (en) * | 2014-12-24 | 2017-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interdigitated capacitor to integrate with flash memory |
US9570539B2 (en) * | 2015-01-30 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integration techniques for MIM or MIP capacitors with flash memory and/or high-κ metal gate CMOS technology |
US9672906B2 (en) | 2015-06-19 | 2017-06-06 | Macronix International Co., Ltd. | Phase change memory with inter-granular switching |
US10108245B2 (en) * | 2016-04-11 | 2018-10-23 | Microsoft Technology Licensing, Llc | Interaction based charging control |
KR20240039456A (ko) * | 2022-09-19 | 2024-03-26 | 삼성전자주식회사 | 커패시터 구조물 및 상기 커패시터 구조물을 포함하는 반도체 장치 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4825268A (en) * | 1985-03-29 | 1989-04-25 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US5696014A (en) * | 1994-03-11 | 1997-12-09 | Micron Semiconductor, Inc. | Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch |
US5814547A (en) * | 1997-10-06 | 1998-09-29 | Industrial Technology Research Institute | Forming different depth trenches simultaneously by microloading effect |
US5858832A (en) * | 1996-03-11 | 1999-01-12 | Chartered Semiconduction Manufacturing Ltd. | Method for forming a high areal capacitance planar capacitor |
JP2000068473A (ja) * | 1998-08-20 | 2000-03-03 | Sony Corp | 半導体装置およびその製造方法 |
US6418044B1 (en) * | 2000-12-28 | 2002-07-09 | Stmicroelectronics, Inc. | Method and circuit for determining sense amplifier sensitivity |
US20030006442A1 (en) * | 2000-01-24 | 2003-01-09 | Tomotaka Fujisawa | Semiconductor device and manufacture thereof |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0294471A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
US6207523B1 (en) * | 1997-07-03 | 2001-03-27 | Micron Technology, Inc. | Methods of forming capacitors DRAM arrays, and monolithic integrated circuits |
JP3194375B2 (ja) * | 1998-12-21 | 2001-07-30 | 日本電気株式会社 | 特性評価用半導体装置および特性評価方法 |
JP3618241B2 (ja) | 1999-02-02 | 2005-02-09 | 松下電器産業株式会社 | 半導体記憶装置 |
JP2000232076A (ja) | 1999-02-10 | 2000-08-22 | Sony Corp | 半導体装置およびその製造方法 |
JP2000236076A (ja) * | 1999-02-15 | 2000-08-29 | Nec Corp | 半導体装置及びその製造方法 |
KR100367740B1 (ko) * | 2000-08-16 | 2003-01-10 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 산화막 제조방법 |
US6376358B1 (en) * | 2001-03-15 | 2002-04-23 | Micron Technology, Inc. | Method of forming plugs and local interconnect for embedded memory/system-on-chip (SOC) applications |
TW524381U (en) * | 2002-03-29 | 2003-03-11 | Ind Tech Res Inst | Interlaced stripe shape capacitive substrate structure |
US6731529B2 (en) * | 2002-06-04 | 2004-05-04 | Infineon Technologies Aktiengesellschaft | Variable capacitances for memory cells within a cell group |
-
2003
- 2003-01-31 JP JP2003023542A patent/JP3944455B2/ja not_active Expired - Lifetime
- 2003-10-29 US US10/694,891 patent/US6956261B2/en not_active Expired - Lifetime
- 2003-12-31 CN CNB2003101248364A patent/CN1314123C/zh not_active Expired - Lifetime
-
2005
- 2005-07-27 US US11/189,896 patent/US20050259457A1/en not_active Abandoned
-
2008
- 2008-03-26 US US12/076,990 patent/US7663174B2/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4825268A (en) * | 1985-03-29 | 1989-04-25 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US5696014A (en) * | 1994-03-11 | 1997-12-09 | Micron Semiconductor, Inc. | Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch |
US5858832A (en) * | 1996-03-11 | 1999-01-12 | Chartered Semiconduction Manufacturing Ltd. | Method for forming a high areal capacitance planar capacitor |
US5814547A (en) * | 1997-10-06 | 1998-09-29 | Industrial Technology Research Institute | Forming different depth trenches simultaneously by microloading effect |
JP2000068473A (ja) * | 1998-08-20 | 2000-03-03 | Sony Corp | 半導体装置およびその製造方法 |
US20030006442A1 (en) * | 2000-01-24 | 2003-01-09 | Tomotaka Fujisawa | Semiconductor device and manufacture thereof |
US6418044B1 (en) * | 2000-12-28 | 2002-07-09 | Stmicroelectronics, Inc. | Method and circuit for determining sense amplifier sensitivity |
Also Published As
Publication number | Publication date |
---|---|
US20050259457A1 (en) | 2005-11-24 |
CN1519944A (zh) | 2004-08-11 |
JP2004235513A (ja) | 2004-08-19 |
US7663174B2 (en) | 2010-02-16 |
US6956261B2 (en) | 2005-10-18 |
US20040152257A1 (en) | 2004-08-05 |
US20080180986A1 (en) | 2008-07-31 |
JP3944455B2 (ja) | 2007-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1314123C (zh) | 半导体装置及其制造方法 | |
CN1206736C (zh) | 半导体装置、互补型半导体装置 | |
CN1139129C (zh) | 半导体集成电路器件及其制造方法 | |
CN1263133C (zh) | 半导体装置 | |
CN1228850C (zh) | 半导体装置及其制造方法 | |
CN1269224C (zh) | 半导体装置 | |
CN1290194C (zh) | 电容元件、半导体存储器及其制备方法 | |
CN1301557C (zh) | 具有多重栅极晶体管的静态随机存取存储单元及其制造方法 | |
CN1499633A (zh) | 半导体器件及其制造方法 | |
CN1449585A (zh) | 半导体器件及其制造方法 | |
CN1426106A (zh) | 半导体装置 | |
CN1961420A (zh) | 半导体器件及其制造方法 | |
CN2736934Y (zh) | 静态随机存储单元及半导体元件 | |
CN1292483C (zh) | 半导体器件及其制造方法 | |
CN1236981A (zh) | 薄膜晶体管及其制造方法 | |
CN1881590A (zh) | 半导体器件和半导体器件的制造方法 | |
CN101055832A (zh) | 半导体装置的制造方法 | |
CN1725507A (zh) | 半导体装置及其制造方法 | |
CN1599067A (zh) | 薄膜半导体器件、其制造工艺以及液晶显示器 | |
CN101030556A (zh) | 半导体器件的制造方法 | |
CN1838430A (zh) | Mis半导体器件和互补mis半导体器件 | |
CN1555580A (zh) | 半导体器件及其制造方法 | |
CN1124407A (zh) | 半导体集成电路器件及其制造方法 | |
CN1261986C (zh) | 含高介电常数绝缘膜的半导体设备和该设备的制造方法 | |
CN1171314C (zh) | 半导体装置及半导体装置的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INTELLECTUAL PROPERTY BRIDGE NO. 1 CO., LTD. Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Effective date: 20140604 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Osaka Japan Patentee after: Matsushita Electric Industrial Co.,Ltd. Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140604 Address after: Tokyo, Japan Patentee after: Godo Kaisha IP Bridge 1 Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
CX01 | Expiry of patent term |
Granted publication date: 20070502 |
|
CX01 | Expiry of patent term |