JP3851791B2 - 半導体集積回路 - Google Patents

半導体集積回路 Download PDF

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Publication number
JP3851791B2
JP3851791B2 JP2001267678A JP2001267678A JP3851791B2 JP 3851791 B2 JP3851791 B2 JP 3851791B2 JP 2001267678 A JP2001267678 A JP 2001267678A JP 2001267678 A JP2001267678 A JP 2001267678A JP 3851791 B2 JP3851791 B2 JP 3851791B2
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JP
Japan
Prior art keywords
circuit
resistor
node
voltage
vout
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Expired - Fee Related
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JP2001267678A
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English (en)
Japanese (ja)
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JP2003076431A5 (enExample
JP2003076431A (ja
Inventor
恒平 及川
慎一郎 白武
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001267678A priority Critical patent/JP3851791B2/ja
Priority to US10/233,529 priority patent/US6744305B2/en
Publication of JP2003076431A publication Critical patent/JP2003076431A/ja
Publication of JP2003076431A5 publication Critical patent/JP2003076431A5/ja
Application granted granted Critical
Publication of JP3851791B2 publication Critical patent/JP3851791B2/ja
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2001267678A 2001-09-04 2001-09-04 半導体集積回路 Expired - Fee Related JP3851791B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001267678A JP3851791B2 (ja) 2001-09-04 2001-09-04 半導体集積回路
US10/233,529 US6744305B2 (en) 2001-09-04 2002-09-04 Power supply circuit having value of output voltage adjusted

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001267678A JP3851791B2 (ja) 2001-09-04 2001-09-04 半導体集積回路

Publications (3)

Publication Number Publication Date
JP2003076431A JP2003076431A (ja) 2003-03-14
JP2003076431A5 JP2003076431A5 (enExample) 2005-07-21
JP3851791B2 true JP3851791B2 (ja) 2006-11-29

Family

ID=19093781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001267678A Expired - Fee Related JP3851791B2 (ja) 2001-09-04 2001-09-04 半導体集積回路

Country Status (2)

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US (1) US6744305B2 (enExample)
JP (1) JP3851791B2 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10226057B3 (de) * 2002-06-12 2004-02-12 Infineon Technologies Ag Integrierte Schaltung mit Spannungsteiler und gepuffertem Kondensator
JP4025167B2 (ja) * 2002-10-17 2007-12-19 株式会社東芝 抵抗素子を有する半導体装置
US7402987B2 (en) * 2005-07-21 2008-07-22 Agere Systems Inc. Low-dropout regulator with startup overshoot control
US20070170979A1 (en) * 2005-11-25 2007-07-26 Giovanni Campardo Charge pump systems and methods
EP1835507B1 (en) * 2006-03-17 2010-08-18 STMicroelectronics Srl Level shifter for semiconductor memory device implemented with low-voltage transistors
EP1892600B1 (en) 2006-08-24 2016-07-27 Micron Technology, Inc. Voltage regulator for non-volatile memories implemented with low-voltage transistors
KR100744131B1 (ko) * 2006-02-21 2007-08-01 삼성전자주식회사 냉온에서 동작 속도가 향상되는 메모리 집적회로 장치
JP4843472B2 (ja) 2006-03-13 2011-12-21 株式会社東芝 電圧発生回路
US20090324521A1 (en) 2007-07-27 2009-12-31 Jonathan Robert Cetti Personal Care Article For Sequentially Dispensing Compositions With Variable Concentrations Of Hydrophobic Benefit Materials
US20110089196A1 (en) 2007-07-27 2011-04-21 Jonathan Robert Cetti Personal-care article for sequentially dispensing compositions with variable concentrations of hydrophobic benefit materials
US8248055B2 (en) * 2008-05-29 2012-08-21 Texas Instruments Incorporated Voltage reference with improved linearity addressing variable impedance characteristics at output node
CA2748083C (en) 2009-01-28 2014-04-22 The Procter & Gamble Company Methods for improving skin quality using rinse-off personal care compositions with variable amounts of hydrophobic benefit agents
JP2010244671A (ja) * 2009-03-19 2010-10-28 Toshiba Corp 内部電源電圧発生回路
JP2011053957A (ja) * 2009-09-02 2011-03-17 Toshiba Corp 参照電流生成回路
WO2011087524A1 (en) 2010-01-17 2011-07-21 The Procter & Gamble Company Biomarker-based methods for formulating compositions that improve skin quality and reduce the visible signs of aging in skin
MX348132B (es) 2010-06-11 2017-05-26 The Procter & Gamble Company * Composiciones para el tratamiento de la piel.
US8289062B2 (en) 2010-09-16 2012-10-16 Micron Technology, Inc. Analog delay lines and adaptive biasing
KR101141456B1 (ko) 2010-12-07 2012-05-04 삼성전기주식회사 전압 레벨 시프터
US8742624B1 (en) * 2010-12-27 2014-06-03 Juniper Networks, Inc. N+1 power supply system upgrade using dual output power supplies
WO2012144062A1 (ja) * 2011-04-22 2012-10-26 ルネサスエレクトロニクス株式会社 半導体装置
CN102364856B (zh) * 2011-06-30 2013-10-16 成都芯源系统有限公司 开关电源及其空载控制电路和控制方法
KR101802439B1 (ko) * 2011-07-14 2017-11-29 삼성전자주식회사 전압 레귤레이터 및 이를 포함하는 메모리 장치
JP5597655B2 (ja) * 2012-01-30 2014-10-01 株式会社東芝 電圧発生回路及び半導体記憶装置
KR20130098041A (ko) * 2012-02-27 2013-09-04 삼성전자주식회사 낮은 외부 전원 전압에 적합한 전압 발생부들
US8895041B2 (en) 2012-03-23 2014-11-25 The Procter & Gamble Company Compositions for delivering perfume to the skin
JP2014048681A (ja) * 2012-08-29 2014-03-17 Toshiba Corp 電源装置
CN103488224B (zh) * 2013-10-10 2015-03-25 中国科学院上海高等研究院 基于比值来调节数字电位器的方法、系统及电路
JP6461422B2 (ja) * 2015-09-09 2019-01-30 東芝メモリ株式会社 半導体記憶装置
US9977073B2 (en) * 2016-06-10 2018-05-22 Integrated Device Technoloy, Inc. On-die verification of resistor fabricated in CMOS process
JP6501325B1 (ja) * 2018-01-30 2019-04-17 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3369807B2 (ja) 1995-08-30 2003-01-20 株式会社東芝 半導体装置
JP3543493B2 (ja) 1996-06-07 2004-07-14 株式会社デンソー 電子回路の動作特性補正装置
US5808458A (en) * 1996-10-04 1998-09-15 Rohm Co., Ltd. Regulated power supply circuit
KR100190101B1 (ko) 1996-10-18 1999-06-01 윤종용 반도체 장치의 내부 전압 변환 회로
JP3497708B2 (ja) 1997-10-09 2004-02-16 株式会社東芝 半導体集積回路
JP3507706B2 (ja) 1998-07-28 2004-03-15 株式会社東芝 半導体装置
JP3738280B2 (ja) * 2000-01-31 2006-01-25 富士通株式会社 内部電源電圧生成回路
JP4743938B2 (ja) * 2000-06-12 2011-08-10 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US6414537B1 (en) * 2000-09-12 2002-07-02 National Semiconductor Corporation Voltage reference circuit with fast disable

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Publication number Publication date
US6744305B2 (en) 2004-06-01
JP2003076431A (ja) 2003-03-14
US20030042971A1 (en) 2003-03-06

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