JP3847316B2 - 電解銀めっき液 - Google Patents
電解銀めっき液 Download PDFInfo
- Publication number
- JP3847316B2 JP3847316B2 JP2004554966A JP2004554966A JP3847316B2 JP 3847316 B2 JP3847316 B2 JP 3847316B2 JP 2004554966 A JP2004554966 A JP 2004554966A JP 2004554966 A JP2004554966 A JP 2004554966A JP 3847316 B2 JP3847316 B2 JP 3847316B2
- Authority
- JP
- Japan
- Prior art keywords
- plating solution
- silver plating
- gloss
- plating
- electrolytic silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007747 plating Methods 0.000 title claims description 51
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims description 37
- 229910052709 silver Inorganic materials 0.000 title claims description 37
- 239000004332 silver Substances 0.000 title claims description 37
- 150000001875 compounds Chemical class 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 8
- 239000003607 modifier Substances 0.000 claims description 8
- 239000004094 surface-active agent Substances 0.000 claims description 7
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 229910052714 tellurium Inorganic materials 0.000 claims description 6
- 229910052716 thallium Inorganic materials 0.000 claims description 6
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical group C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 5
- -1 polyoxyethylene chain Polymers 0.000 claims description 5
- 125000000355 1,3-benzoxazolyl group Chemical group O1C(=NC2=C1C=CC=C2)* 0.000 claims description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000002736 nonionic surfactant Substances 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- 229940098221 silver cyanide Drugs 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 claims description 2
- 229940095064 tartrate Drugs 0.000 claims description 2
- 239000002585 base Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 238000005282 brightening Methods 0.000 description 2
- 239000002932 luster Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 description 2
- VDMJCVUEUHKGOY-JXMROGBWSA-N (1e)-4-fluoro-n-hydroxybenzenecarboximidoyl chloride Chemical compound O\N=C(\Cl)C1=CC=C(F)C=C1 VDMJCVUEUHKGOY-JXMROGBWSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- NJDNXYGOVLYJHP-UHFFFAOYSA-L disodium;2-(3-oxido-6-oxoxanthen-9-yl)benzoate Chemical compound [Na+].[Na+].[O-]C(=O)C1=CC=CC=C1C1=C2C=CC(=O)C=C2OC2=CC([O-])=CC=C21 NJDNXYGOVLYJHP-UHFFFAOYSA-L 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- UESISTHQAYQMRA-UHFFFAOYSA-M formyloxythallium Chemical compound [Tl+].[O-]C=O UESISTHQAYQMRA-UHFFFAOYSA-M 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- FXADMRZICBQPQY-UHFFFAOYSA-N orthotelluric acid Chemical compound O[Te](O)(O)(O)(O)O FXADMRZICBQPQY-UHFFFAOYSA-N 0.000 description 1
- 239000006179 pH buffering agent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229940097322 potassium arsenite Drugs 0.000 description 1
- HEQWEGCSZXMIJQ-UHFFFAOYSA-M potassium;oxoarsinite Chemical compound [K+].[O-][As]=O HEQWEGCSZXMIJQ-UHFFFAOYSA-M 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- PTLRDCMBXHILCL-UHFFFAOYSA-M sodium arsenite Chemical compound [Na+].[O-][As]=O PTLRDCMBXHILCL-UHFFFAOYSA-M 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- YTQVHRVITVLIRD-UHFFFAOYSA-L thallium sulfate Chemical compound [Tl+].[Tl+].[O-]S([O-])(=O)=O YTQVHRVITVLIRD-UHFFFAOYSA-L 0.000 description 1
- 229940119523 thallium sulfate Drugs 0.000 description 1
- 229910000374 thallium(I) sulfate Inorganic materials 0.000 description 1
- JADVWWSKYZXRGX-UHFFFAOYSA-M thioflavine T Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C1=[N+](C)C2=CC=C(C)C=C2S1 JADVWWSKYZXRGX-UHFFFAOYSA-M 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/46—Electroplating: Baths therefor from solutions of silver
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Description
液のpHは8〜9で安定しており、ハルセルパターンは広い範囲で半光沢外観となり、光沢度は均一、ムラの無い良好なめっき外観であった。ジェットめっき試験により作成しためっき皮膜は50〜200A/dm2の電流密度範囲で、光沢度0.4±0.05のバラツキの無い半光沢外観であった。また、無光沢、半光沢外観を有する銀皮膜の結晶は緻密であり、実装特性も十分満足していた。
実施例1〜3よりも銀濃度を少なくした組成であるが、ハルセルパターンの半光沢領域は均一で鈍い光沢の半光沢外観となっていた。ジェットめっき試験において100A/dm2以上の高電流密度範囲までヤケめっきを生じることなく、得られためっき皮膜はムラの無い半光沢外観となっていた。
実施例1〜3よりも銀濃度を多くした組成であるが、ハルセルパターンの半光沢領域は広く、ムラの無い良好な皮膜が得られていた。また、ジェットめっき試験では、300A/dm2の電流密度範囲まで半光沢外観を有する銀皮膜が得られており、フクレやムラの無い均質な皮膜であった。
添加剤を一切含まない組成であるが、ハルセルパターンは全体的に白く、ヤケに近い白い外観となっていた。ジェットめっき試験では電流密度が100A/dm2を越えるとヤケめっきとなってしまい、半光沢外観となる電流密度は、50〜90A/dm2と狭い範囲であった。
従来通り、光沢剤と界面活性剤を含んだ組成であるが、ハルセルパターンの半光沢領域の光沢度は若干光り気味の光沢となっていた。またジェットめっき試験により作成したサンプルは200A/dm2の電流密度範囲までヤケめっきを生じることがなく実装特性も満足していたものの、外観は光沢度0.8〜1.0程度の光沢気味の外観となっていた。
Claims (7)
- 前記光沢剤を、0.005〜50mg/l含有することを特徴とする請求項1または2記載の電解銀めっき液。
- 前記光沢調整剤を1〜1000mg/l含有することを特徴とする請求項1または2記載の電解銀めっき液。
- 前記光沢剤を0.01〜5mg/l含有することを特徴とする請求項1または2記載の電解銀めっき液。
- 界面活性剤として、ポリオキシエチレン鎖を有する非イオン界面活性剤、もしくはフッ素系界面活性剤を0.001〜10g/l含有することを特徴とする請求項1または2記載の電解銀めっき液。
- 金属塩として50〜300g/lのシアン化銀類アルカリ金属を含有し、伝導塩として50〜300g/lのクエン酸塩、リン酸塩、酒石酸塩およびコハク酸塩の1種以上含有することを特徴とする請求項1または2記載の電解銀めっき液。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002345783 | 2002-11-28 | ||
JP2002345783 | 2002-11-28 | ||
PCT/JP2003/013955 WO2004048646A1 (ja) | 2002-11-28 | 2003-10-30 | 電解銀めっき液 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2004048646A1 JPWO2004048646A1 (ja) | 2006-03-23 |
JP3847316B2 true JP3847316B2 (ja) | 2006-11-22 |
Family
ID=32376026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004554966A Expired - Fee Related JP3847316B2 (ja) | 2002-11-28 | 2003-10-30 | 電解銀めっき液 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7402232B2 (ja) |
JP (1) | JP3847316B2 (ja) |
KR (1) | KR101074744B1 (ja) |
CN (1) | CN1692182A (ja) |
TW (1) | TWI318650B (ja) |
WO (1) | WO2004048646A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100773272B1 (ko) * | 2006-09-22 | 2007-11-09 | 와이엠티 주식회사 | 중금속이온을 포함한 은도금 용액 및 그로부터 제조된인쇄회로기판 |
DE102009029558A1 (de) * | 2009-09-17 | 2011-03-31 | Schott Solar Ag | Elektrolytzusammensetzung |
JP6230778B2 (ja) * | 2012-05-31 | 2017-11-15 | 日亜化学工業株式会社 | 光半導体装置用電解銀めっき液 |
CN103320823B (zh) * | 2013-06-18 | 2016-04-20 | 中山品高电子材料有限公司 | 一种led引线框架超高亮度局部电镀液及其电镀工艺 |
JP6279868B2 (ja) * | 2013-10-01 | 2018-02-14 | アピックヤマダ株式会社 | リードフレーム基板の製造方法及び発光装置の製造方法 |
KR101582870B1 (ko) * | 2014-04-24 | 2016-01-19 | (주)대림금속 | 은도금 코팅용 은탄소도금 코팅액, 이를 코팅하는 방법 및 이를 포함하는 금속접촉단자 |
JP6942791B2 (ja) * | 2017-03-31 | 2021-09-29 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | 電解銀めっき液 |
CN109402684A (zh) * | 2018-11-22 | 2019-03-01 | 福泉市发隆钢构有限公司 | 一种不锈钢镀银用电镀液及使用方法 |
JP6916971B1 (ja) * | 2020-09-15 | 2021-08-11 | Dowaメタルテック株式会社 | 銀めっき材およびその製造方法 |
JP2023005513A (ja) * | 2021-06-29 | 2023-01-18 | Dowaメタルテック株式会社 | 銀めっき材およびその製造方法 |
DE102021118820A1 (de) * | 2021-07-21 | 2023-01-26 | Umicore Galvanotechnik Gmbh | Silber-Elektrolyt |
JP2023115850A (ja) * | 2022-02-08 | 2023-08-21 | Dowaメタルテック株式会社 | 銀めっき材の製造方法および銀めっき材 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1001078B (de) * | 1953-08-13 | 1957-01-17 | Dehydag Gmbh | Galvanische Baeder zur Herstellung von Metallueberzuegen |
US4265715A (en) | 1979-07-13 | 1981-05-05 | Oxy Metal Industries Corporation | Silver electrodeposition process |
US4310392A (en) * | 1979-12-31 | 1982-01-12 | Bell Telephone Laboratories, Incorporated | Electrolytic plating |
JPS5743995A (en) * | 1980-08-27 | 1982-03-12 | Sumitomo Electric Ind Ltd | Silver plating liquid and silver plating method |
US4614568A (en) * | 1983-06-14 | 1986-09-30 | Nihon Kogyo Kabushiki Kaisha | High-speed silver plating and baths therefor |
US4604167A (en) * | 1984-01-26 | 1986-08-05 | Shinko Electric Industries Co., Ltd. | Silver plating solution and silver plating process and pretreatment solution therefor |
JP2756300B2 (ja) | 1989-04-11 | 1998-05-25 | 住友金属鉱山 株式会社 | 銀めっき法 |
JPH11302893A (ja) * | 1998-04-22 | 1999-11-02 | Okuno Chem Ind Co Ltd | 非シアン系電気銀めっき液 |
-
2003
- 2003-10-30 KR KR1020047016850A patent/KR101074744B1/ko active IP Right Grant
- 2003-10-30 CN CNA200380100457XA patent/CN1692182A/zh active Pending
- 2003-10-30 JP JP2004554966A patent/JP3847316B2/ja not_active Expired - Fee Related
- 2003-10-30 US US10/512,632 patent/US7402232B2/en not_active Expired - Lifetime
- 2003-10-30 WO PCT/JP2003/013955 patent/WO2004048646A1/ja active Application Filing
- 2003-11-27 TW TW092133355A patent/TWI318650B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US7402232B2 (en) | 2008-07-22 |
KR101074744B1 (ko) | 2011-10-19 |
US20060060474A1 (en) | 2006-03-23 |
KR20050084783A (ko) | 2005-08-29 |
JPWO2004048646A1 (ja) | 2006-03-23 |
TWI318650B (en) | 2009-12-21 |
WO2004048646A1 (ja) | 2004-06-10 |
CN1692182A (zh) | 2005-11-02 |
TW200427876A (en) | 2004-12-16 |
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