JP3813890B2 - ３層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 - Google Patents
３層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 Download PDFInfo
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- JP3813890B2 JP3813890B2 JP2002081328A JP2002081328A JP3813890B2 JP 3813890 B2 JP3813890 B2 JP 3813890B2 JP 2002081328 A JP2002081328 A JP 2002081328A JP 2002081328 A JP2002081328 A JP 2002081328A JP 3813890 B2 JP3813890 B2 JP 3813890B2
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- 238000004904 shortening Methods 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 229910052905 tridymite Inorganic materials 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- LBNVCJHJRYJVPK-UHFFFAOYSA-N trimethyl(4-trimethylsilylbuta-1,3-diynyl)silane Chemical compound C[Si](C)(C)C#CC#C[Si](C)(C)C LBNVCJHJRYJVPK-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Silicon Polymers (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002081328A JP3813890B2 (ja) | 2002-03-22 | 2002-03-22 | ３層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
| US10/392,814 US6884571B2 (en) | 2002-03-22 | 2003-03-21 | Intermediate layer composition for three-layer resist process and pattern formation method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002081328A JP3813890B2 (ja) | 2002-03-22 | 2002-03-22 | ３層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003280207A JP2003280207A (ja) | 2003-10-02 |
| JP2003280207A5 JP2003280207A5 (https=) | 2005-04-07 |
| JP3813890B2 true JP3813890B2 (ja) | 2006-08-23 |
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| JP2002081328A Expired - Fee Related JP3813890B2 (ja) | 2002-03-22 | 2002-03-22 | ３層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6884571B2 (https=) |
| JP (1) | JP3813890B2 (https=) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743885B2 (en) * | 2001-07-31 | 2004-06-01 | Sumitomo Chemical Company, Limited | Resin composition for intermediate layer of three-layer resist |
| WO2004092840A1 (ja) * | 2003-04-17 | 2004-10-28 | Nissan Chemical Industries, Ltd. | 多孔質下層膜及び多孔質下層膜を形成するための下層膜形成組成物 |
| US7901864B2 (en) * | 2004-09-23 | 2011-03-08 | International Business Machines Corporation | Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition |
| US7375172B2 (en) * | 2005-07-06 | 2008-05-20 | International Business Machines Corporation | Underlayer compositions containing heterocyclic aromatic structures |
| JP2007218943A (ja) * | 2006-02-14 | 2007-08-30 | Shin Etsu Chem Co Ltd | 基板及びパターン形成方法 |
| CN101952248B (zh) | 2007-10-10 | 2014-04-16 | 巴斯夫欧洲公司 | 锍盐引发剂 |
| JP2009215423A (ja) * | 2008-03-10 | 2009-09-24 | Chisso Corp | かご型シルセスキオキサン構造を含む重合体とそれを含むネガ型レジスト材料 |
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| JP2573371B2 (ja) | 1989-10-11 | 1997-01-22 | 沖電気工業株式会社 | ３層レジスト法用の中間層形成材 |
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| JPH0638400A (ja) | 1992-07-17 | 1994-02-10 | Hitachi Ltd | 小型情報処理装置のバッテリ装置 |
| JP2901044B2 (ja) | 1993-12-08 | 1999-06-02 | 沖電気工業株式会社 | 三層レジスト法によるパターン形成方法 |
| US6743885B2 (en) * | 2001-07-31 | 2004-06-01 | Sumitomo Chemical Company, Limited | Resin composition for intermediate layer of three-layer resist |
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| US20030207208A1 (en) | 2003-11-06 |
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