JP3813890B2 - 3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 - Google Patents

3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 Download PDF

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Publication number
JP3813890B2
JP3813890B2 JP2002081328A JP2002081328A JP3813890B2 JP 3813890 B2 JP3813890 B2 JP 3813890B2 JP 2002081328 A JP2002081328 A JP 2002081328A JP 2002081328 A JP2002081328 A JP 2002081328A JP 3813890 B2 JP3813890 B2 JP 3813890B2
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Japan
Prior art keywords
group
intermediate layer
layer
resist
polymer
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JP2002081328A
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Japanese (ja)
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JP2003280207A5 (enExample
JP2003280207A (ja
Inventor
一也 上西
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Fujifilm Holdings Corp
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Fuji Photo Film Co Ltd
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Priority to JP2002081328A priority Critical patent/JP3813890B2/ja
Priority to US10/392,814 priority patent/US6884571B2/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Silicon Polymers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2002081328A 2002-03-22 2002-03-22 3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 Expired - Fee Related JP3813890B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002081328A JP3813890B2 (ja) 2002-03-22 2002-03-22 3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法
US10/392,814 US6884571B2 (en) 2002-03-22 2003-03-21 Intermediate layer composition for three-layer resist process and pattern formation method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002081328A JP3813890B2 (ja) 2002-03-22 2002-03-22 3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法

Publications (3)

Publication Number Publication Date
JP2003280207A JP2003280207A (ja) 2003-10-02
JP2003280207A5 JP2003280207A5 (enExample) 2005-04-07
JP3813890B2 true JP3813890B2 (ja) 2006-08-23

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JP2002081328A Expired - Fee Related JP3813890B2 (ja) 2002-03-22 2002-03-22 3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法

Country Status (2)

Country Link
US (1) US6884571B2 (enExample)
JP (1) JP3813890B2 (enExample)

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JP2007218943A (ja) * 2006-02-14 2007-08-30 Shin Etsu Chem Co Ltd 基板及びパターン形成方法
JP5473921B2 (ja) 2007-10-10 2014-04-16 ビーエーエスエフ ソシエタス・ヨーロピア スルホニウム塩開始剤
JP2009215423A (ja) * 2008-03-10 2009-09-24 Chisso Corp かご型シルセスキオキサン構造を含む重合体とそれを含むネガ型レジスト材料
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US8614053B2 (en) 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
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JP6982500B2 (ja) 2015-02-26 2021-12-17 ソニーグループ株式会社 フェニルエチニルナフタレン染料およびそれらの使用方法
CN107454903B (zh) 2015-02-26 2021-01-01 索尼公司 包含共轭基团的水溶性荧光或着色染料
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BR112018070164B1 (pt) 2016-04-01 2022-09-27 Sony Corporation Of America Corantes diméricos ou poliméricos ultrabrilhantes
US11434377B2 (en) 2016-04-01 2022-09-06 Sony Corporation Ultra bright dimeric or polymeric dyes with rigid spacing groups
US9851359B2 (en) 2016-04-06 2017-12-26 Sony Corporation Of America Ultra bright dimeric or polymeric dyes with spacing linker groups
EP3455238A1 (en) 2016-05-10 2019-03-20 Sony Corporation Ultra bright polymeric dyes with peptide backbones
WO2017197014A2 (en) 2016-05-10 2017-11-16 Sony Corporation Compositions comprising a polymeric dye and a cyclodextrin and uses thereof
BR112018073199A2 (pt) 2016-05-11 2019-04-16 Sony Corporation corantes diméricos ou poliméricos ultrabrilhantes
JP7068191B2 (ja) 2016-06-06 2022-05-16 ソニーグループ株式会社 蛍光または有色レポーター基を含むイオン性ポリマー
US12018159B2 (en) 2016-07-29 2024-06-25 Sony Group Corporation Ultra bright dimeric or polymeric dyes and methods for preparation of the same
KR20200064059A (ko) 2017-10-05 2020-06-05 소니 주식회사 프로그램가능한 수지상 약물
KR20200067132A (ko) 2017-10-05 2020-06-11 소니 주식회사 프로그램가능한 중합체성 약물
CN111836645A (zh) 2017-11-16 2020-10-27 索尼公司 可编程的聚合药物
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KR102864292B1 (ko) 2018-03-21 2025-09-26 소니그룹주식회사 링커 군을 갖는 중합체성 텐덤 염료
JP7580689B2 (ja) 2018-06-27 2024-11-12 ソニーグループ株式会社 デオキシリボースを含むリンカー基を有するポリマー色素
CN113383043A (zh) 2019-09-26 2021-09-10 索尼集团公司 具有连接体基团的聚合物串联染料
CN111533860B (zh) * 2020-06-10 2021-10-01 青岛天祥环保工程有限公司 水性涂料超疏水改性剂及其制备方法
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US6743885B2 (en) * 2001-07-31 2004-06-01 Sumitomo Chemical Company, Limited Resin composition for intermediate layer of three-layer resist

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JP2003280207A (ja) 2003-10-02
US20030207208A1 (en) 2003-11-06
US6884571B2 (en) 2005-04-26

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