JP3813890B2 - 3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 - Google Patents
3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 Download PDFInfo
- Publication number
- JP3813890B2 JP3813890B2 JP2002081328A JP2002081328A JP3813890B2 JP 3813890 B2 JP3813890 B2 JP 3813890B2 JP 2002081328 A JP2002081328 A JP 2002081328A JP 2002081328 A JP2002081328 A JP 2002081328A JP 3813890 B2 JP3813890 B2 JP 3813890B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- intermediate layer
- layer
- resist
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 0 COc(c1ccc(*)cc11)c(cccc2)c2c1OC Chemical compound COc(c1ccc(*)cc11)c(cccc2)c2c1OC 0.000 description 2
- MMNWSHJJPDXKCH-UHFFFAOYSA-N OS(c(cc1C(c2ccccc22)=O)ccc1C2=O)(=O)=O Chemical compound OS(c(cc1C(c2ccccc22)=O)ccc1C2=O)(=O)=O MMNWSHJJPDXKCH-UHFFFAOYSA-N 0.000 description 1
- KVBGVZZKJNLNJU-UHFFFAOYSA-N OS(c1cc(cccc2)c2cc1)(=O)=O Chemical compound OS(c1cc(cccc2)c2cc1)(=O)=O KVBGVZZKJNLNJU-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Silicon Polymers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002081328A JP3813890B2 (ja) | 2002-03-22 | 2002-03-22 | 3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
| US10/392,814 US6884571B2 (en) | 2002-03-22 | 2003-03-21 | Intermediate layer composition for three-layer resist process and pattern formation method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002081328A JP3813890B2 (ja) | 2002-03-22 | 2002-03-22 | 3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003280207A JP2003280207A (ja) | 2003-10-02 |
| JP2003280207A5 JP2003280207A5 (enExample) | 2005-04-07 |
| JP3813890B2 true JP3813890B2 (ja) | 2006-08-23 |
Family
ID=29230004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002081328A Expired - Fee Related JP3813890B2 (ja) | 2002-03-22 | 2002-03-22 | 3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6884571B2 (enExample) |
| JP (1) | JP3813890B2 (enExample) |
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| US6743885B2 (en) * | 2001-07-31 | 2004-06-01 | Sumitomo Chemical Company, Limited | Resin composition for intermediate layer of three-layer resist |
| CN1774673B (zh) * | 2003-04-17 | 2010-09-29 | 日产化学工业株式会社 | 多孔质下层膜和用于形成多孔质下层膜的形成下层膜的组合物 |
| US7901864B2 (en) * | 2004-09-23 | 2011-03-08 | International Business Machines Corporation | Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition |
| US7375172B2 (en) * | 2005-07-06 | 2008-05-20 | International Business Machines Corporation | Underlayer compositions containing heterocyclic aromatic structures |
| JP2007218943A (ja) * | 2006-02-14 | 2007-08-30 | Shin Etsu Chem Co Ltd | 基板及びパターン形成方法 |
| US8512934B2 (en) | 2007-10-10 | 2013-08-20 | Basf Se | Sulphonium salt initiators |
| JP2009215423A (ja) * | 2008-03-10 | 2009-09-24 | Chisso Corp | かご型シルセスキオキサン構造を含む重合体とそれを含むネガ型レジスト材料 |
| JP5493689B2 (ja) * | 2008-12-10 | 2014-05-14 | Jnc株式会社 | 重合性液晶組成物およびホモジニアス配向液晶フィルム |
| US8309502B2 (en) * | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8444768B2 (en) | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8614053B2 (en) | 2009-03-27 | 2013-12-24 | Eastman Chemical Company | Processess and compositions for removing substances from substrates |
| JP5324361B2 (ja) * | 2009-08-28 | 2013-10-23 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
| WO2011104127A1 (en) | 2010-02-24 | 2011-09-01 | Basf Se | Latent acids and their use |
| US9029268B2 (en) | 2012-11-21 | 2015-05-12 | Dynaloy, Llc | Process for etching metals |
| JP6190534B2 (ja) | 2013-08-22 | 2017-08-30 | ソニー株式会社 | 水溶性蛍光染料又は有色染料及びその使用方法 |
| EP3094687B1 (en) | 2014-01-16 | 2020-02-12 | Sony Corporation | Water soluble fluorescent or colored dyes |
| CN107207456B (zh) | 2015-02-02 | 2021-05-04 | 巴斯夫欧洲公司 | 潜酸及其用途 |
| KR102676814B1 (ko) | 2015-02-26 | 2024-06-21 | 소니그룹주식회사 | 접합 그룹을 포함하는 수용성 형광 또는 착색 염료 |
| JP6982500B2 (ja) * | 2015-02-26 | 2021-12-17 | ソニーグループ株式会社 | フェニルエチニルナフタレン染料およびそれらの使用方法 |
| US10865310B2 (en) | 2015-05-11 | 2020-12-15 | Sony Corporation Of America | Ultra bright dimeric or polymeric dyes |
| CN109415574B (zh) | 2016-04-01 | 2021-05-28 | 索尼公司 | 具有刚性间隔基团的超亮二聚体或聚合物染料 |
| CN107580618A (zh) | 2016-04-01 | 2018-01-12 | 索尼公司 | 超亮二聚或多聚染料 |
| JP7069033B2 (ja) | 2016-04-06 | 2022-05-17 | ソニーグループ株式会社 | スペーシングリンカー基を有する超明色ダイマーまたはポリマー染料 |
| WO2017197014A2 (en) | 2016-05-10 | 2017-11-16 | Sony Corporation | Compositions comprising a polymeric dye and a cyclodextrin and uses thereof |
| JP7527537B2 (ja) | 2016-05-10 | 2024-08-05 | ソニーグループ株式会社 | ペプチド骨格を有する超明色ポリマー染料 |
| AU2017264861B2 (en) | 2016-05-11 | 2021-09-23 | Sony Group Corporation | Ultra bright dimeric or polymeric dyes |
| WO2017214165A1 (en) | 2016-06-06 | 2017-12-14 | Sony Corporation | Ionic polymers comprising fluorescent or colored reporter groups |
| US12018159B2 (en) | 2016-07-29 | 2024-06-25 | Sony Group Corporation | Ultra bright dimeric or polymeric dyes and methods for preparation of the same |
| EP3691689A1 (en) | 2017-10-05 | 2020-08-12 | Sony Corporation | Programmable dendritic drugs |
| JP7551056B2 (ja) | 2017-10-05 | 2024-09-17 | ソニーグループ株式会社 | プログラマブルなポリマー薬物 |
| JP2021503450A (ja) | 2017-11-16 | 2021-02-12 | ソニー株式会社 | プログラム可能なポリマー薬 |
| JP2021510698A (ja) | 2018-01-12 | 2021-04-30 | ソニー株式会社 | 生物学的に活性な化合物を含むホスホアルキルリボースポリマー |
| CN111565757A (zh) | 2018-01-12 | 2020-08-21 | 索尼公司 | 包含生物活性化合物的磷酸烷基聚合物 |
| JP7813098B2 (ja) | 2018-01-12 | 2026-02-12 | ソニーグループ株式会社 | 生物学的に活性な化合物を含む剛性間隔基を有するポリマー |
| KR102742386B1 (ko) | 2018-03-19 | 2024-12-16 | 소니그룹주식회사 | 형광 신호 향상을 위한 2가 금속의 사용 |
| WO2019182766A1 (en) | 2018-03-21 | 2019-09-26 | Sony Corporation | Polymeric tandem dyes with linker groups |
| KR102854332B1 (ko) | 2018-06-27 | 2025-09-03 | 소니그룹주식회사 | 디옥시리보오스를 포함하는 링커 군을 갖는 중합체성 염료 |
| EP3820944A1 (en) | 2018-07-13 | 2021-05-19 | Sony Corporation | Polymeric dyes having a backbone comprising organophosphate units |
| WO2021062176A2 (en) | 2019-09-26 | 2021-04-01 | Sony Corporation | Polymeric tandem dyes with linker groups |
| JP7816141B2 (ja) | 2019-09-30 | 2026-02-18 | ソニーグループ株式会社 | ヌクレオチドプローブ |
| CN111533860B (zh) * | 2020-06-10 | 2021-10-01 | 青岛天祥环保工程有限公司 | 水性涂料超疏水改性剂及其制备方法 |
| EP4256078A1 (en) | 2020-12-07 | 2023-10-11 | Sony Group Corporation | Spacing linker group design for brightness enhancement in dimeric or polymeric dyes |
| US12568803B2 (en) * | 2023-03-03 | 2026-03-03 | Applied Materials, Inc. | Methods of forming interconnect structures |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2573371B2 (ja) | 1989-10-11 | 1997-01-22 | 沖電気工業株式会社 | 3層レジスト法用の中間層形成材 |
| JPH0443264A (ja) | 1990-06-08 | 1992-02-13 | Hitachi Zosen Corp | 吸収式熱源装置 |
| JPH0444741A (ja) | 1990-06-12 | 1992-02-14 | Toshiba Corp | ステレオx線テレビ装置 |
| JP2641644B2 (ja) | 1991-05-16 | 1997-08-20 | 東京応化工業株式会社 | 多層レジスト法用積層材料の製造方法 |
| JPH0638400A (ja) | 1992-07-17 | 1994-02-10 | Hitachi Ltd | 小型情報処理装置のバッテリ装置 |
| JP2901044B2 (ja) | 1993-12-08 | 1999-06-02 | 沖電気工業株式会社 | 三層レジスト法によるパターン形成方法 |
| US6743885B2 (en) * | 2001-07-31 | 2004-06-01 | Sumitomo Chemical Company, Limited | Resin composition for intermediate layer of three-layer resist |
-
2002
- 2002-03-22 JP JP2002081328A patent/JP3813890B2/ja not_active Expired - Fee Related
-
2003
- 2003-03-21 US US10/392,814 patent/US6884571B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003280207A (ja) | 2003-10-02 |
| US20030207208A1 (en) | 2003-11-06 |
| US6884571B2 (en) | 2005-04-26 |
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