JP3785900B2 - 液晶表示装置とその製造方法 - Google Patents

液晶表示装置とその製造方法 Download PDF

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Publication number
JP3785900B2
JP3785900B2 JP2000134189A JP2000134189A JP3785900B2 JP 3785900 B2 JP3785900 B2 JP 3785900B2 JP 2000134189 A JP2000134189 A JP 2000134189A JP 2000134189 A JP2000134189 A JP 2000134189A JP 3785900 B2 JP3785900 B2 JP 3785900B2
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Prior art keywords
liquid crystal
conductive layer
layer
wiring
crystal display
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Expired - Fee Related
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JP2000134189A
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English (en)
Japanese (ja)
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JP2001311954A (ja
JP2001311954A5 (https=
Inventor
卓也 ▲高▼橋
寿輝 金子
克 田村
賢一 鬼沢
正倫 寺門
健一 茶原
孝洋 落合
勝 高畠
雄一 原野
英明 山本
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2000134189A priority Critical patent/JP3785900B2/ja
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Publication of JP2001311954A5 publication Critical patent/JP2001311954A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2000134189A 2000-04-28 2000-04-28 液晶表示装置とその製造方法 Expired - Fee Related JP3785900B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000134189A JP3785900B2 (ja) 2000-04-28 2000-04-28 液晶表示装置とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000134189A JP3785900B2 (ja) 2000-04-28 2000-04-28 液晶表示装置とその製造方法

Publications (3)

Publication Number Publication Date
JP2001311954A JP2001311954A (ja) 2001-11-09
JP2001311954A5 JP2001311954A5 (https=) 2004-11-18
JP3785900B2 true JP3785900B2 (ja) 2006-06-14

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JP (1) JP3785900B2 (https=)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030016051A (ko) 2001-08-20 2003-02-26 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
JPWO2003036707A1 (ja) * 2001-10-22 2005-02-17 三菱瓦斯化学株式会社 アルミニウム／モリブデン積層膜のエッチング方法
JP2003149674A (ja) * 2001-11-13 2003-05-21 Hitachi Ltd 液晶表示装置
AU2003271178A1 (en) 2002-10-17 2004-05-25 Asahi Glass Company, Limited Multilayer body, base with wiring, organic el display device, connection terminal of organic el display device, and methods for manufacturing these
JP4181853B2 (ja) 2002-11-15 2008-11-19 Ｎｅｃ液晶テクノロジー株式会社 積層膜の複合ウェットエッチング方法
JP2004356616A (ja) * 2003-05-28 2004-12-16 Samsung Electronics Co Ltd 配線用エッチング液及びこれを利用した薄膜トランジスタ表示板の製造方法
US8038857B2 (en) 2004-03-09 2011-10-18 Idemitsu Kosan Co., Ltd. Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes
KR101061850B1 (ko) * 2004-09-08 2011-09-02 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조방법
CN1798874A (zh) * 2004-11-09 2006-07-05 先进显示股份有限公司 蚀刻剂和蚀刻方法
JP4749179B2 (ja) * 2005-02-24 2011-08-17 関東化学株式会社 チタン、アルミニウム金属積層膜エッチング液組成物
JP4947942B2 (ja) * 2005-09-20 2012-06-06 出光興産株式会社 スパッタリングターゲット
KR101241524B1 (ko) * 2005-09-01 2013-03-11 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 투명 도전막 및 투명 전극
JP4804867B2 (ja) * 2005-10-18 2011-11-02 出光興産株式会社 透明導電膜、透明電極、電極基板及びその製造方法
KR100870217B1 (ko) * 2005-11-29 2008-11-24 미쓰비시덴키 가부시키가이샤 에칭액 및 에칭방법
US8212953B2 (en) * 2005-12-26 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP1843194A1 (en) 2006-04-06 2007-10-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
JP5713204B2 (ja) * 2006-08-11 2015-05-07 Ｎｌｔテクノロジー株式会社 液晶表示装置
JP2008065300A (ja) * 2006-08-11 2008-03-21 Nec Lcd Technologies Ltd 液晶表示装置
TWI405875B (zh) * 2006-08-22 2013-08-21 Kanto Kagaku 鈦、鋁金屬層積膜之蝕刻液組成物
JP5010873B2 (ja) * 2006-08-23 2012-08-29 関東化学株式会社 チタン、アルミニウム金属積層膜エッチング液組成物
JP4747186B2 (ja) * 2008-06-02 2011-08-17 Ｎｅｃ液晶テクノロジー株式会社 積層膜の複合ウェットエッチング方法
JP5256868B2 (ja) * 2008-06-10 2013-08-07 日本精機株式会社 積層体及び有機ｅｌパネル
JP2011040593A (ja) * 2009-08-12 2011-02-24 Seiko Epson Corp 半導体装置ならびに半導体装置の製造方法
JP5452343B2 (ja) * 2010-04-27 2014-03-26 株式会社ジャパンディスプレイ 表示装置およびその製造方法
JP6448636B2 (ja) * 2013-07-19 2019-01-09 エルジー ディスプレイ カンパニー リミテッド 電極積層体および有機発光素子
JP6441306B2 (ja) * 2014-02-24 2018-12-19 パイオニア株式会社 発光装置
KR102197854B1 (ko) 2014-05-13 2021-01-05 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 표시기판 및 이의 제조방법
US20170278879A1 (en) * 2014-09-03 2017-09-28 Sharp Kabushiki Kaisha Method for manufacturing metal lamination film, method for manufacturing semiconductor device, and method for manufacturing liquid crystal display device
US10824285B2 (en) 2018-02-06 2020-11-03 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Electrode structure and method for manufacturing the same
CN108399030B (zh) * 2018-02-06 2020-09-04 武汉华星光电半导体显示技术有限公司 电极结构及电极结构的制作方法
JP2018129313A (ja) * 2018-05-15 2018-08-16 パイオニア株式会社 発光装置
EP3599646A3 (en) * 2018-07-23 2020-04-01 Ricoh Company, Ltd. Metal oxide, field-effect transistor, and method for producing the same
CN112216704A (zh) * 2019-07-12 2021-01-12 群创光电股份有限公司 线路结构以及包含其的电子装置
JP2020038846A (ja) * 2019-12-02 2020-03-12 パイオニア株式会社 発光装置
CN113985667B (zh) * 2021-10-12 2023-08-01 Tcl华星光电技术有限公司 阵列基板及其制备方法、液晶显示面板

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