CN1798874A - 蚀刻剂和蚀刻方法 - Google Patents
蚀刻剂和蚀刻方法 Download PDFInfo
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- CN1798874A CN1798874A CN200480014911.4A CN200480014911A CN1798874A CN 1798874 A CN1798874 A CN 1798874A CN 200480014911 A CN200480014911 A CN 200480014911A CN 1798874 A CN1798874 A CN 1798874A
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- 238000005530 etching Methods 0.000 title claims description 190
- 238000000034 method Methods 0.000 title claims description 45
- 239000003153 chemical reaction reagent Substances 0.000 claims description 95
- 239000000758 substrate Substances 0.000 claims description 55
- 229910000838 Al alloy Inorganic materials 0.000 claims description 51
- 229910001257 Nb alloy Inorganic materials 0.000 claims description 48
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 claims description 48
- 239000000203 mixture Substances 0.000 claims description 35
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 28
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 18
- 229910017604 nitric acid Inorganic materials 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 17
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 14
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 13
- 229910052758 niobium Inorganic materials 0.000 claims description 10
- 239000010955 niobium Substances 0.000 claims description 10
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 10
- 150000007524 organic acids Chemical class 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910000583 Nd alloy Inorganic materials 0.000 claims description 3
- CCIVGXIOQKPBKL-UHFFFAOYSA-N ethanesulfonic acid Chemical compound CCS(O)(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-N 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 abstract description 5
- 239000001257 hydrogen Substances 0.000 abstract 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract 4
- 125000000217 alkyl group Chemical group 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 3
- 150000002431 hydrogen Chemical class 0.000 abstract 3
- 239000001301 oxygen Substances 0.000 abstract 3
- 229910052760 oxygen Inorganic materials 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 125000005843 halogen group Chemical group 0.000 abstract 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 2
- 125000001424 substituent group Chemical group 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract 1
- 239000007850 fluorescent dye Substances 0.000 abstract 1
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- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000007921 spray Substances 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 8
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
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- 238000000206 photolithography Methods 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
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- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- ZXPJBQLFCRVBDR-UHFFFAOYSA-N acetic acid;methanesulfonic acid Chemical compound CC(O)=O.CS(O)(=O)=O ZXPJBQLFCRVBDR-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
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- 230000002349 favourable effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 230000036647 reaction Effects 0.000 description 1
- 230000007115 recruitment Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
序号 | 蚀刻剂组成[重量%] | 酸成分浓度(Np+(98/63)Nn) | 蚀刻速率(nm/min) | 蚀刻速率的比[-] | 配线形状O.E.=50% | 抗蚀剂状态 | ||||||||
磷酸(Np) | 硝酸(Nn) | 乙酸 | 甲基磺酸 | 水 | 钼-铌合金单层膜 | 多层膜(全体) | 多层膜中的铝合金层 | 断面形状 | 残余物 | |||||
实施例 | 1 | 65 | 8 | 6.5 | - | 20.5 | 77.4 | 466 | 453 | 449 | 1.038 | ○ | ○ | ○ |
2 | 65 | 8 | 8.25 | - | 18.75 | 77.4 | 361 | 387 | 397 | 0.909 | ○ | ○ | ○ | |
3 | 68.8 | 5 | 5 | - | 21.2 | 76.6 | 511 | 421 | 398 | 1.284 | ○ | ○ | ○ | |
4 | 68.8 | 5 | 6.8 | - | 19.4 | 76.6 | 393 | 429 | 442 | 0.889 | ○ | ○ | ○ | |
5 | 68.8 | 5 | 8.5 | - | 17.7 | 76.6 | 296 | 364 | 393 | 0.753 | ○ | ○ | ○ | |
6 | 72.5 | 2 | 8.5 | - | 17 | 75.6 | 253 | 320 | 351 | 0.721 | ○ | ○ | ○ | |
7 | 68.8 | 5 | - | 5 | 21.2 | 76.6 | 490 | 480 | 477 | 1.027 | ○ | ○ | ○ | |
参考例 | 1 | 50 | 10 | 2.5 | - | 37.5 | 65.6 | 3429 | 198 | 151 | 22.709 | × | ○ | ○ |
2 | 65 | 8 | 11.8 | - | 15.2 | 77.4 | 209 | 329 | 407 | 0.514 | × | ○ | ○ | |
3 | 68.8 | 5 | 11.8 | - | 14.4 | 76.6 | 168 | 312 | 436 | 0.385 | × | ○ | ○ | |
4 | 72.5 | 2 | 11.5 | - | 14 | 75.6 | 131 | 258 | 381 | 0.344 | × | ○ | ○ | |
5 | 68.8 | 5 | - | 1 | 25.2 | 76.6 | 1044 | 480 | 407 | 2.565 | × | ○ | ○ | |
6 | 68.8 | 5 | - | 8.5 | 17.7 | 76.6 | 245 | 369 | 444 | 0.552 | × | ○ | ○ |
Claims (9)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/016913 WO2006051608A1 (ja) | 2004-11-09 | 2004-11-09 | エッチング液及びエッチング方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1798874A true CN1798874A (zh) | 2006-07-05 |
Family
ID=36336294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200480014911.4A Pending CN1798874A (zh) | 2004-11-09 | 2004-11-09 | 蚀刻剂和蚀刻方法 |
Country Status (2)
Country | Link |
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CN (1) | CN1798874A (zh) |
WO (1) | WO2006051608A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108085684A (zh) * | 2017-11-23 | 2018-05-29 | 中国科学院近代物理研究所 | 用于去除铜表面铌镀层的化学退镀液和退镀方法 |
WO2020147575A1 (zh) * | 2019-01-18 | 2020-07-23 | 惠科股份有限公司 | 薄膜晶体管的制备方法及显示装置 |
CN112229833A (zh) * | 2020-10-12 | 2021-01-15 | 宁波江丰电子材料股份有限公司 | 一种溶解钼铌合金样品的混合酸及其制备方法和应用 |
CN112326631A (zh) * | 2020-10-12 | 2021-02-05 | 宁波江丰电子材料股份有限公司 | 一种溶解钨钛合金样品的混合酸及其制备方法和应用 |
CN113755840A (zh) * | 2021-08-16 | 2021-12-07 | 合肥本源量子计算科技有限责任公司 | 一种刻蚀液及刻蚀方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3785900B2 (ja) * | 2000-04-28 | 2006-06-14 | 株式会社日立製作所 | 液晶表示装置とその製造方法 |
JP3859119B2 (ja) * | 2000-12-22 | 2006-12-20 | 日立金属株式会社 | 電子部品用薄膜配線 |
JP4214821B2 (ja) * | 2002-04-24 | 2009-01-28 | 三菱化学株式会社 | エッチング液及びエッチング方法 |
JP2004296786A (ja) * | 2003-03-27 | 2004-10-21 | Optrex Corp | ウェットエッチング方法およびウェットエッチング装置 |
-
2004
- 2004-11-09 WO PCT/JP2004/016913 patent/WO2006051608A1/ja active Application Filing
- 2004-11-09 CN CN200480014911.4A patent/CN1798874A/zh active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108085684A (zh) * | 2017-11-23 | 2018-05-29 | 中国科学院近代物理研究所 | 用于去除铜表面铌镀层的化学退镀液和退镀方法 |
CN108085684B (zh) * | 2017-11-23 | 2019-10-08 | 中国科学院近代物理研究所 | 用于去除铜表面铌镀层的化学退镀液和退镀方法 |
WO2020147575A1 (zh) * | 2019-01-18 | 2020-07-23 | 惠科股份有限公司 | 薄膜晶体管的制备方法及显示装置 |
CN112229833A (zh) * | 2020-10-12 | 2021-01-15 | 宁波江丰电子材料股份有限公司 | 一种溶解钼铌合金样品的混合酸及其制备方法和应用 |
CN112326631A (zh) * | 2020-10-12 | 2021-02-05 | 宁波江丰电子材料股份有限公司 | 一种溶解钨钛合金样品的混合酸及其制备方法和应用 |
CN112326631B (zh) * | 2020-10-12 | 2023-11-07 | 宁波江丰电子材料股份有限公司 | 一种溶解钨钛合金样品的方法 |
CN112229833B (zh) * | 2020-10-12 | 2023-12-29 | 宁波江丰电子材料股份有限公司 | 一种溶解钼铌合金样品的方法 |
CN113755840A (zh) * | 2021-08-16 | 2021-12-07 | 合肥本源量子计算科技有限责任公司 | 一种刻蚀液及刻蚀方法 |
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